MOSFETs Datasheets
146 MOSFETs datasheets read into specs, pinouts and ratings. Parts from Infineon Technologies, Diodes and onsemi.
MOSFETs datasheets, page 2
146 parts · page 2 of 5. Most used first, then by part number.
CSD18540Q5BT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
DMG1012T
Diodes Incorporated
N-Channel Enhancement Mode MOSFET featuring low on-resistance, low gate threshold voltage, fast switching speed, and ESD protection up to 2kV.
DMG1012T-13
Diodes Incorporated
MOSFETs 20V N-Ch Enhance Mode MOSFET
DMG1012T-7
Diodes Incorporated
MOSFET N-CH 20V 630MA SOT-523
DMG3414U
Diodes Incorporated
20V N-channel enhancement mode MOSFET in SOT23 with low on-resistance (25mΩ max @ 4.5V VGS), low input capacitance and fast switching
DMG3414UQ
Diodes Incorporated
N-channel enhancement mode MOSFET with low on-resistance and fast switching speed
DMN2044UCB4
Diodes Incorporated
20V N-channel enhancement mode MOSFET with 40mΩ max RDS(ON) at 4.5V gate drive in an ultra-small 1.0mm x 1.0mm wafer-level package, for load switching and power management in portable applications
DMN62D0UT
Diodes Incorporated
60V N-channel enhancement mode MOSFET with low on-resistance, low gate threshold and fast switching for motor control and power management
DMN62D0UT-13
Diodes Incorporated
60V N-channel enhancement mode MOSFET with low on-resistance and fast switching in a SOT523 package, for motor control and power management.
DMN62D0UT-7
Diodes Incorporated
60V N-channel enhancement mode MOSFET with low on-resistance and fast switching, in SOT523 package, for motor control and power management.
DMN62D0UT4
Diodes Incorporated
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
DMN7022LFGQ
Diodes Incorporated
AEC-Q101 qualified 75V N-channel enhancement mode MOSFET with 22mΩ max RDS(ON) at 10V gate drive in a PowerDI3333-8 package; not recommended for new design (use DMTH8028LFVWQ).
DMN7022LFGQ-13
Diodes Incorporated
AEC-Q101 qualified 75V N-channel enhancement mode MOSFET in PowerDI3333-8 with 22mΩ max RDS(ON) at 10V gate drive, for automotive backlighting, power management and DC-DC converters (not recommended for new design).
DMN7022LFGQ-7
Diodes Incorporated
75V N-Channel Enhancement Mode MOSFET designed for automotive applications.
DMP2160UFDB
Diodes Incorporated
Dual P-channel enhancement mode MOSFET with low on-resistance (70mΩ @ -4.5V) and low gate threshold voltage in a low-profile U-DFN2020-6 package, AEC-Q101 qualified.
DMP2160UFDB-7
Diodes Incorporated
Dual P-Channel Enhancement Mode MOSFET featuring low on-resistance and fast switching speed.
DMP2160UFDB-7R
Diodes Incorporated
Dual P-channel enhancement mode MOSFET with low on-resistance (70mΩ @ -4.5V), -20V drain-source voltage, in a 0.5mm max height U-DFN2020-6 package; AEC-Q101 qualified.
DMP2160UFDBQ
Diodes Incorporated
Dual P-channel enhancement mode MOSFET, -20V, low RDS(ON) of 70mΩ at VGS=-4.5V, AEC-Q101 qualified, in a low-profile U-DFN2020-6 (Type B) package; the automotive-compliant variant is DMP2160UFDBQ under a separate datasheet
DMP3099L
Diodes Incorporated
DMP3099L-13
Diodes Incorporated
DMP3099L-7
Diodes Incorporated
-30V P-channel enhancement mode MOSFET with 65mΩ max RDS(ON) at VGS=-10V and -3.8A continuous drain current, in SOT23 package, for power-management applications
DMP3099LQ
Diodes Incorporated
FDC2512
onsemi
MOSFET N-CH 150V 1.4A SUPERSOT6
FDC6320C
onsemi
Dual complementary N- and P-channel logic level enhancement mode MOSFET with gate-source ESD zener, replacing NPN/PNP digital transistors in low-voltage load switching
FDS6679AZ
onsemi
-30V, -13A P-channel PowerTrench MOSFET with max 9.3mΩ RDS(on) at VGS=-10V, extended ±25V VGS range and 6kV HBM ESD protection, for power management and load switching.
FQP12N60C
Fairchild Semiconductor
12A, 600V N-channel enhancement mode planar stripe DMOS power MOSFET with 0.65 ohm RDS(on), suited for switched mode power supplies, active PFC and lamp ballasts
FQP30N06L
Fairchild Semiconductor
N-Channel enhancement mode power field effect transistor (MOSFET) optimized for low on-state resistance, superior switching performance, and high energy pulse withstand capability, suitable for automotive, DC/DC converters, and power manage
FQPF12N60C
Fairchild Semiconductor
600V, 12A N-channel enhancement mode planar stripe DMOS power MOSFET with RDS(on) of 0.65 Ω max, low gate charge and 100% avalanche testing, suited to SMPS, active PFC and lamp ballasts.
FS8205A
EVVO
DUAL N-CHANNEL ENHANCEMENT MODE
HL20N06D
HL Microelectronics
60V, 20A N-channel trench power MOSFET with 28mΩ typical RDS(on), super low gate charge and fast switching for DC-DC converters and synchronous rectification