DMP3099LQ
Features and Benefits
Manufacturer
Diodes Incorporated
Overview
Part: DMP3099L (Diodes Incorporated)
Type: P-CHANNEL ENHANCEMENT MODE MOSFET
Key Specs:
- Drain-Source Voltage (BVDSS): -30V
- On-Resistance (RDS(ON) Max): 65mΩ @ VGS = -10V
- Drain Current (ID Max): -3.8A @ TA = +25°C
- Operating and Storage Temperature Range: -55 to +150 °C
Features:
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- An automotive-compliant part is available (DMP3099LQ)
Applications:
- Backlighting
- Power-management functions
- DC-DC converters
Package:
- SOT23: dimensions not specified
Features
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- An automotive-compliant part is available under a separate datasheet (DMP3099LQ)
Mechanical Data
- Package: SOT23
- Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish⎯Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3
- Terminal Connections: See Diagram
- Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
| Packing | ||
|---|---|---|
| Orderable Part Number | Package | Qty. |
| DMP3099L-7 | SOT23 (Standard) | 3000 |
| DMP3099L-13 | SOT23 (Standard) | 10000 |
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | -30 | - | _ | ٧ | VGS = 0V, ID = -250μ A |
| Zero Gate Voltage Drain Current | IDSS | _ | _ | -800 | nA | V DS = -30V, V GS = 0V |
| Gate-Source Leakage | Igss | _ | _ | ±100 | nA | VGS = ±20V, VDS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | V GS(th) | -1.0 | 1 | -2.1 | V | VDS = VGS, ID = -250μ A |
| Static Drain-Source On-Resistance | Descent | 65 | mΩ | Vgs = -10V, ID = -3.8A | ||
| Static Drain-Source On-Resistance | RDS(ON) | _ | _ | 99 | 11122 | VGS = -4.5V , ID = -3.0A |
| Forward Transfer Admittance | Y fs | _ | 3.6 | _ | S | VDS = -5V , ID = -2.7A |
| Diode Forward Voltage (Note 6) | V SD | _ | _ | -1.26 | V | V GS = 0V, I S = -2.7A |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | Ciss | _ | 563 | _ | pF | ., |
| Output Capacitance | Coss | _ | 48 | _ | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | _ | 41 | _ | pF | 1 - 1.0WH2 |
| Gate Resistance | Rg | _ | 10.3 | _ | Ω | VGS = 0V , VDS = 0V , $f = 1MHz$ |
| SWITCHING CHARACTERISTICS (Note 8) | ||||||
| Total Gate Charge | Qg | _ | 5.2 | _ | VDS = -15V , VGS = -4.5V , ID = -3.8A | |
| - | 11 | _ | nC | |||
| Gate-Source Charge | Qgs | - | 1.7 | _ | V DS = -15V, V GS = -10V, I D = -3.8A | |
| Gate-Drain Charge | Q gd | _ | 1.9 | _ | ||
| Turn-On Delay Time | td(on) | _ | 4.8 | _ | ||
| Rise Time | tr | _ | 5.0 | _ | V DS = -15V, V GS = -10V, | |
| Turn-Off Delay Time | td(off) | _ | 31 | _ | ns | ID = -1A, RG = 6.0Ω |
| Fall Time | t f | _ | 15 | _ |
-
- Pulse width ≤10μS, Duty Cycle ≤1%.
-
- Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Figure 7 Gate Threshold Variation vs. Ambient Temperature
Absolute Maximum Ratings
| Characteris | tic | Symbol | Value | Unit | |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | ||
| Gate-Source Voltage | Vgss | ±20 | V | ||
| Drain Current (Note 5) VGS = -10V Steady TA = +25°C State TA = +70°C | lo | -3.8 -2.9 | A | ||
| Pulsed Drain Current (Note 6) | I DM | -11 | Α |
Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Total Power Dissipation (Note 5) | PD | 1.08 | W |
| Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5) | Reja | 115 | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMP3099L | Diodes Incorporated | — |
| DMP3099L-13 | Diodes Incorporated | — |
| DMP3099L-7 | Diodes Incorporated | SOT-23 |
| DMP3099LQ.PDF | Diodes Incorporated | — |
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