MOSFETs Datasheets
Explore 24 mosfets with extracted datasheets, electrical characteristics, pinout diagrams, and specifications.
24 parts
20N06D
ON Semiconductor
Power MOSFET 20 Amps, 60 Volts, Logic Level N-Channel DPAK
2N7000
onsemi
2N7002
Shenzhen Slkormicro Semicon Co., Ltd.
60V 115MA 7.5@10V,500MA 225MW N
2N7002T
Diodes Incorporated
MOSFETs
AO3400
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 5.8A SOT23-3
AO3402
VBsemi
Mosfets N-channel VDS=30V VGS=±20V ID=5.3A RDS(ON)=33MΩ@4.5V SOT23
AP15P03Q
SAMWIN
BSS126H6327
Infineon Technologies
Transistor: N-MOSFET; unipolar; 600V; 21mA; 700ohm; -55+150 deg.C; SMD; SOT23
BSS138
onsemi
MOSFETs SOT-23 N-CH LOGIC
DMG1012T
Diodes
N-Channel Enhancement Mode MOSFET featuring low on-resistance, low gate threshold voltage, fast switching speed, and ESD protection up to 2kV.
DMG1012T-13
Diodes Incorporated
MOSFETs 20V N-Ch Enhance Mode MOSFET
DMG1012T-7
Diodes Incorporated
MOSFET N-CH 20V 630MA SOT-523
DMP3099L-7
Diodes Incorporated
FDC2512
Texas Instruments
N-Channel MOSFET optimized for low gate charge, low R_DS(ON), and fast switching speed, designed to improve efficiency in DC/DC converters.
HSBB6115
Huashuo
IPT015N10N5
Infineon Technologies
MOSFETs IFX FET >80 - 100V
IRFZ44N
Infineon Technologies
Advanced HEXFET® Power MOSFET with ultra-low on-resistance, fast switching, and rugged design, suitable for a wide variety of applications.
IRLML2803TRPBF
Infineon Technologies
MOSFET N-CH 30V 1.2A SOT23
IRLML6344
Infineon Technologies
30V N-Channel HEXFET Power MOSFET for load/system switch applications, featuring low on-resistance.
IRLZ44N
Infineon Technologies
Logic-Level Gate Drive HEXFET Power MOSFET with advanced process technology, dynamic dv/dt rating, 175°C operating temperature, fast switching, and fully avalanche rated.
NTA4151PT1G
onsemi
MOSFET P-CH 20V 760MA SC75
SI2302
Silicon Labs
SSM3K333R,LF(T
Toshiba
N-Channel 30V 6A 2.5V @ 100uA 28mΩ @ 5A, 10V 1W SOT-23F MOSFET RoHS
STL6P3LLH6-MS
STMicroelectronics
P-channel Power MOSFET developed using STripFET H6 technology, featuring very low on-resistance and high avalanche ruggedness, suitable for switching applications.