MOSFETs Datasheets
Explore 30 mosfets with extracted datasheets, electrical characteristics, pinout diagrams, and specifications.
30 parts
20N06D
ON Semiconductor
Power MOSFET 20 Amps, 60 Volts, Logic Level N-Channel DPAK
2N7000
onsemi
2N7002
Shenzhen Slkormicro Semicon Co., Ltd.
60V 115MA 7.5@10V,500MA 225MW N
2N7002T
Diodes Incorporated
MOSFETs
AO3400
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 5.8A SOT23-3
AO3402
VBsemi
Mosfets N-channel VDS=30V VGS=±20V ID=5.3A RDS(ON)=33MΩ@4.5V SOT23
AONR36366-MS
MSKSemi Semiconductors
DFN3X3-8L N, VDSS30V, ID100A, RDON4MR@VGS10V(MAX), VGS(TH)1.0-2.5V
AP15P03Q
SAMWIN
BSS126H6327
Infineon Technologies
Transistor: N-MOSFET; unipolar; 600V; 21mA; 700ohm; -55+150 deg.C; SMD; SOT23
BSS138
onsemi
MOSFETs SOT-23 N-CH LOGIC
C5224305
ElecSuper
P-Channel 30V 62A 79W Surface Mount TO-252
C52895
onsemi
Cutoff Tool CTL 5/8" X1-1/4" X5" Non-Ferrous
C5370964
TECH PUBLIC
150V 1.5A Surface Mount SOT-23-6
DMG1012T
Diodes
N-Channel Enhancement Mode MOSFET featuring low on-resistance, low gate threshold voltage, fast switching speed, and ESD protection up to 2kV.
DMG1012T-13
Diodes Incorporated
MOSFETs 20V N-Ch Enhance Mode MOSFET
DMG1012T-7
Diodes Incorporated
MOSFET N-CH 20V 630MA SOT-523
DMP3099L-7
Diodes Incorporated
FDC2512
onsemi
MOSFET N-CH 150V 1.4A SUPERSOT6
HSBB6115
Huashuo
IPT015N10N5
Infineon Technologies
MOSFETs IFX FET >80 - 100V
IRFZ44N
Infineon Technologies
Advanced HEXFET® Power MOSFET with ultra-low on-resistance, fast switching, and rugged design, suitable for a wide variety of applications.
IRLML2803TRPBF
Infineon Technologies
MOSFET N-CH 30V 1.2A SOT23
IRLML6344
Infineon Technologies
30V N-Channel HEXFET Power MOSFET for load/system switch applications, featuring low on-resistance.
IRLZ44NPBF
Infineon
Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.022 Ohm; Id 47A; TO-220AB; Pd 110W; Vgs +/-16V
NTA4151PT1G
onsemi
MOSFET P-CH 20V 760MA SC75
SI2302
Silicon Labs
SSM3J338R
Toshiba
1W(Ta) 10V 1V@1mA 19.5nC@ 4.5 V 1P 12V 17.6m¦¸@ 6A, 8V 6A 1.4nF@6V SOT-23F 2.9mm*1.8mm*800¦Ìm
SSM3J338R,LF
Toshiba
1W(Ta) 10V 1V@1mA 19.5nC@ 4.5 V 1P 12V 17.6m¦¸@ 6A, 8V 6A 1.4nF@6V SOT-23F 2.9mm*1.8mm*800¦Ìm
SSM3K333R,LF(T
Toshiba
N-Channel 30V 6A 2.5V @ 100uA 28mΩ @ 5A, 10V 1W SOT-23F MOSFET RoHS
STL6P3LLH6-MS
STMicroelectronics
P-channel Power MOSFET developed using STripFET H6 technology, featuring very low on-resistance and high avalanche ruggedness, suitable for switching applications.