STL6P3LLH6-MS

STL6P3LLH6

Manufacturer

STMicroelectronics

Overview

Part: STL6P3LLH6 (ST)

Type: P-channel Power MOSFET

Key Specs:

Drain-source voltage (VDS): 30 V
Static drain-source on-resistance (RDS(on) max): 30 mΩ
Drain current (ID) at TC = 25 °C: 6 A
Total power dissipation (PTOT) at TC = 25 °C: 2.9 W

Features:

Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Very low RDS(on)

Applications:

Switching applications

Package:

PowerFLAT 3.3 x 3.3: 3.3 x 3.3 mm

Electrical Characteristics

(TC = 25 °C unless otherwise specified)

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source breakdown voltage	VGS = 0 V, ID = 250 μA	30			V
IDSS	Zero gate voltage drain current	VGS = 0 V, VDS = 30 V VGS = 0 V, VDS = 30 V, TC = 125 °C			1 10	μA μA
IGSS	Gate-body leakage current	VDS = 0 V, VGS = ±20 V			±100	nA
VGS(th)	Gate threshold voltage	VDS = VGS, ID = 250 μA	1			V
RDS(on)	Static drain-source on-resistance	VGS = 10 V, ID = 3 A		24	30	mΩ
		VGS = 4.5 V, ID = 3 A		38	50	mΩ

Table 3. On /off states

Table 4. Dynamic

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
Ciss	Input capacitance	VDS = 25 V, f = 1 MHz, VGS = 0 V	-	1450	-	pF
Coss	Output capacitance		-	178	-	pF
Crss	Reverse transfer capacitance		-	120	-	pF
Qg	Total gate charge	VDD = 24 V, ID = 6 A, VGS = 4.5 V (see Figure 12. Switching times test circuit for resistive load)	-	12	-	nC
Qgs	Gate-source charge		-	4.4	-	nC
Qgd	Gate-drain charge		-	5	-	nC

Table 5. Switching times

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on delay time	VDD = 24 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V	-	15	-	ns
tr	Rise time	VDD = 24 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V	-	15	-	ns
td(off)	Turn-off delay time	VDD = 24 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V	-	24	-	ns
tf	Fall time	VDD = 24 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V	-	21	-	ns

Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

Table 6. Source drain diode

Symbol	Parameter Test conditions		Min.	Typ.	Max.	Unit
VSD	Forward on voltage	ISD = 6 A, VGS = 0 V	-		1.1	V
trr	Reverse recovery time	ISD = 6 A, di/dt = 100 A/μs VDD = 16 V, TJ = 150 °C	-	15		ns
Qrr	Reverse recovery charge		-	6.5		nC
IRRM	Reverse recovery current		-	0.9		A

Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

Absolute Maximum Ratings

Symbol	Parameter	Value	Unit
VDS	Drain-source voltage	30	V
VGS	Gate-source voltage	±20	V
ID(1)	Drain current (continuous) at TC = 25 °C	6	A
	Drain current (continuous) at TC = 100 °C	3.8	A
IDM(1)(2)	Drain current (pulsed)	24	A
PTOT	Total power dissipation at TC = 25 °C	2.9	W
Tstg	Storage temperature	- 55 to 150	°C
TJ	Max. operating junction temperature	150	°C

1. The value is rated according Rthj-pcb.

2. Pulse width limited by safe operating area.

Thermal Information

Symbol	Parameter	Value	Unit
Rthj-case	Thermal resistance junction-case max	2.50	°C/W
Rthj-pcb(1)	Thermal resistance junction-pcb, single operation	42.8	°C/W

1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.

Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
STL6P3LLH6	STMicroelectronics	8-PowerVDFN

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