STL6P3LLH6-MS
P-channel Power MOSFETThe STL6P3LLH6-MS is a p-channel power mosfet from STMicroelectronics. View the full STL6P3LLH6-MS datasheet below including key specifications, electrical characteristics.
STL6P3LLH6-MS shares its datasheet with STL6P3LLH6, whose page lists every part number it covers.
Official STL6P3LLH6-MS datasheet (PDF) — the source this page was extracted from.
STL6P3LLH6-MS Key Specifications
| Parameter | Value |
|---|---|
| Total Gate Charge (Qg) | 12 nC (typ) at VDD=24V, ID=6A, VGS=4.5V |
| Gate-Source Voltage (VGS) | ±20 V |
| Drain-Source Voltage (VDS) | 30 V |
| Pulsed Drain Current (IDM) | 24 A |
| Operating Junction Temperature | -55 °C to 150 °C |
| Package Dimensions (L X W X Min H) | 3.3 mm x 3.3 mm x 0.70 mm |
| Total Power Dissipation (Tc=25°C) | 2.9 W |
| Continuous Drain Current (Tc=25°C) | 6 A |
| Static Drain-Source On-Resistance (RDS(On)) | 24 mΩ (typ) at VGS=10V, ID=3A |
STL6P3LLH6-MS Overview
Part: STL6P3LLH6 — STMicroelectronics
Type: P-channel Power MOSFET
Description: P-channel 30 V, 24 mΩ typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package.
Operating Conditions:
- Max drain-source voltage: 30 V
- Max gate-source voltage: ±20 V
- Operating junction temperature: up to 150 °C
- Max continuous drain current: 6 A (at T_C = 25 °C)
Absolute Maximum Ratings:
- Max drain-source voltage: 30 V
- Max continuous drain current: 6 A (at T_C = 25 °C)
- Max junction temperature: 150 °C
- Max storage temperature: -55 to 150 °C
Key Specs:
- Drain-source breakdown voltage V(BR)DSS: 30 V (V_GS = 0 V, I_D = 250 μA)
- Static drain-source on-resistance R_DS(on): 24 mΩ typ., 30 mΩ max (V_GS = 10 V, I_D = 3 A)
- Static drain-source on-resistance R_DS(on): 38 mΩ typ., 50 mΩ max (V_GS = 4.5 V, I_D = 3 A)
- Zero gate voltage drain current I_DSS: 1 μA max (V_GS = 0 V, V_DS = 30 V)
- Gate threshold voltage V_GS(th): 1 V min (V_DS = V_GS, I_D = 250 μA)
- Total gate charge Q_g: 12 nC typ. (V_DD = 24 V, I_D = 6 A, V_GS = 4.5 V)
- Input capacitance C_iss: 1450 pF typ. (V_DS = 25 V, f = 1 MHz, V_GS = 0 V)
- Turn-on delay time t_d(on): 15 ns typ. (V_DD = 24 V, I_D = 3 A, R_G = 4.7 Ω, V_GS = 10 V)
Features:
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications:
- Switching applications
Package:
- PowerFLAT 3.3 x 3.3
STL6P3LLH6-MS Features
| Order code | V DS | R DS(on) max. | I D | P TOT |
|---|---|---|---|---|
| STL6P3LLH6 | 30 V | 30 mΩ | 6 A | 2.9W |
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
STL6P3LLH6-MS Electrical Characteristics
(T C = 25 °C unless otherwise specified)
Table 3. On /off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-source breakdown voltage | V GS = 0 V, I D = 250 μA | 30 | V | ||
| I DSS | Zero gate voltage drain current | V GS = 0 V, V DS = 30 V | 1 | μA | ||
| I DSS | Zero gate voltage drain current | V GS = 0 V, V DS = 30 V, T C = 125 °C | 10 | μA | ||
| I GSS | Gate-body leakage current | V DS = 0 V, V GS = ±20 V | ±100 | nA | ||
| V GS(th) | Gate threshold voltage | V DS = V GS , I D = 250 μA | 1 | V | ||
| R DS(on) | Static drain-source on-resistance | V GS = 10 V, I D = 3 A | 24 | 30 | mΩ | |
| R DS(on) | Static drain-source on-resistance | V GS = 4.5 V, I D = 3 A | 38 | 50 | mΩ |
Table 4. Dynamic
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| C iss | Input capacitance | V DS = 25 V, f = 1 MHz, V GS = 0 V | - | 1450 | - | pF |
| C oss | Output capacitance | V DS = 25 V, f = 1 MHz, V GS = 0 V | - | 178 | - | pF |
| C rss | Reverse transfer capacitance | V DS = 25 V, f = 1 MHz, V GS = 0 V | - | 120 | - | pF |
| Q g | Total gate charge | V DD = 24 V, I D = 6 A, V GS = 4.5 V (see Figure 12. Switching times test circuit for resistive load) | - | 12 | - | nC |
| Q gs | Gate-source charge | V DD = 24 V, I D = 6 A, V GS = 4.5 V (see Figure 12. Switching times test circuit for resistive load) | - | 4.4 | - | nC |
| Q gd | Gate-drain charge | V DD = 24 V, I D = 6 A, V GS = 4.5 V (see Figure 12. Switching times test circuit for resistive load) | - | 5 | - | nC |
Table 5. Switching times
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| t d(on) | Turn-on delay time | - | 15 | - | ns | |
| t r | Rise time | V DD = 24 V, I D = 3 A, | - | 15 | - | ns |
| t d(off) | Turn-off delay time | R G = 4.7 Ω, V GS = 10 V | - | 24 | - | ns |
| t f | Fall time | - | 21 | - | ns |
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
Table 6. Source drain diode
Table 6. Source drain diode
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V SD | Forward on voltage | I SD = 6 A, V GS = 0 V | - | 1.1 | V | |
| t rr | Reverse recovery time | I SD = 6 A, di/dt = 100 A/μs V DD = 16 V, T J = 150 °C | - | 15 | ns | |
| Q rr | Reverse recovery charge | I SD = 6 A, di/dt = 100 A/μs V DD = 16 V, T J = 150 °C | - | 6.5 | nC | |
| I RRM | Reverse recovery current | I SD = 6 A, di/dt = 100 A/μs V DD = 16 V, T J = 150 °C | - | 0.9 | A |
Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.
STL6P3LLH6-MS Package Information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| STL6P3LLH6 | STMicroelectronics | 8-PowerVDFN |
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All MOSFETs datasheetsAll STMicroelectronics datasheets (808)
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