STL6P3LLH6-MS

P-channel Power MOSFET

The STL6P3LLH6-MS is a p-channel power mosfet from STMicroelectronics. View the full STL6P3LLH6-MS datasheet below including key specifications, electrical characteristics.

Manufacturer

STMicroelectronics

Key Specifications

Parameter	Value
Total Gate Charge (Qg)	12 nC (typ) at VDD=24V, ID=6A, VGS=4.5V
Gate-Source Voltage (VGS)	±20 V
Drain-Source Voltage (VDS)	30 V
Pulsed Drain Current (IDM)	24 A
Operating Junction Temperature	-55 °C to 150 °C
Package Dimensions (L X W X Min H)	3.3 mm x 3.3 mm x 0.70 mm
Total Power Dissipation (Tc=25°C)	2.9 W
Continuous Drain Current (Tc=25°C)	6 A
Static Drain-Source On-Resistance (RDS(On))	24 mΩ (typ) at VGS=10V, ID=3A

Overview

Part: STL6P3LLH6 — STMicroelectronics

Type: P-channel Power MOSFET

Description: P-channel 30 V, 24 mΩ typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package.

Operating Conditions:

Max drain-source voltage: 30 V
Max gate-source voltage: ±20 V
Operating junction temperature: up to 150 °C
Max continuous drain current: 6 A (at T_C = 25 °C)

Absolute Maximum Ratings:

Max drain-source voltage: 30 V
Max continuous drain current: 6 A (at T_C = 25 °C)
Max junction temperature: 150 °C
Max storage temperature: -55 to 150 °C

Key Specs:

Drain-source breakdown voltage V(BR)DSS: 30 V (V_GS = 0 V, I_D = 250 μA)
Static drain-source on-resistance R_DS(on): 24 mΩ typ., 30 mΩ max (V_GS = 10 V, I_D = 3 A)
Static drain-source on-resistance R_DS(on): 38 mΩ typ., 50 mΩ max (V_GS = 4.5 V, I_D = 3 A)
Zero gate voltage drain current I_DSS: 1 μA max (V_GS = 0 V, V_DS = 30 V)
Gate threshold voltage V_GS(th): 1 V min (V_DS = V_GS, I_D = 250 μA)
Total gate charge Q_g: 12 nC typ. (V_DD = 24 V, I_D = 6 A, V_GS = 4.5 V)
Input capacitance C_iss: 1450 pF typ. (V_DS = 25 V, f = 1 MHz, V_GS = 0 V)
Turn-on delay time t_d(on): 15 ns typ. (V_DD = 24 V, I_D = 3 A, R_G = 4.7 Ω, V_GS = 10 V)

Features:

Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss

Applications:

Switching applications

Package:

PowerFLAT 3.3 x 3.3

Features

Order code	V DS	R DS(on) max.	I D	P TOT
STL6P3LLH6	30 V	30 mΩ	6 A	2.9W

Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss

Electrical Characteristics

(T C = 25 °C unless otherwise specified)

Table 3. On /off states

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V (BR)DSS	Drain-source breakdown voltage	V GS = 0 V, I D = 250 μA	30			V
I DSS	Zero gate voltage drain current	V GS = 0 V, V DS = 30 V			1	μA
I DSS	Zero gate voltage drain current	V GS = 0 V, V DS = 30 V, T C = 125 °C			10	μA
I GSS	Gate-body leakage current	V DS = 0 V, V GS = ±20 V			±100	nA
V GS(th)	Gate threshold voltage	V DS = V GS , I D = 250 μA	1			V
R DS(on)	Static drain-source on-resistance	V GS = 10 V, I D = 3 A		24	30	mΩ
R DS(on)	Static drain-source on-resistance	V GS = 4.5 V, I D = 3 A		38	50	mΩ

Table 4. Dynamic

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
C iss	Input capacitance	V DS = 25 V, f = 1 MHz, V GS = 0 V	-	1450	-	pF
C oss	Output capacitance	V DS = 25 V, f = 1 MHz, V GS = 0 V	-	178	-	pF
C rss	Reverse transfer capacitance	V DS = 25 V, f = 1 MHz, V GS = 0 V	-	120	-	pF
Q g	Total gate charge	V DD = 24 V, I D = 6 A, V GS = 4.5 V (see Figure 12. Switching times test circuit for resistive load)	-	12	-	nC
Q gs	Gate-source charge	V DD = 24 V, I D = 6 A, V GS = 4.5 V (see Figure 12. Switching times test circuit for resistive load)	-	4.4	-	nC
Q gd	Gate-drain charge	V DD = 24 V, I D = 6 A, V GS = 4.5 V (see Figure 12. Switching times test circuit for resistive load)	-	5	-	nC

Table 5. Switching times

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
t d(on)	Turn-on delay time		-	15	-	ns
t r	Rise time	V DD = 24 V, I D = 3 A,	-	15	-	ns
t d(off)	Turn-off delay time	R G = 4.7 Ω, V GS = 10 V	-	24	-	ns
t f	Fall time		-	21	-	ns

Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

Table 6. Source drain diode

Table 6. Source drain diode

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V SD	Forward on voltage	I SD = 6 A, V GS = 0 V	-		1.1	V
t rr	Reverse recovery time	I SD = 6 A, di/dt = 100 A/μs V DD = 16 V, T J = 150 °C	-	15		ns
Q rr	Reverse recovery charge	I SD = 6 A, di/dt = 100 A/μs V DD = 16 V, T J = 150 °C	-	6.5		nC
I RRM	Reverse recovery current	I SD = 6 A, di/dt = 100 A/μs V DD = 16 V, T J = 150 °C	-	0.9		A

Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
STL6P3LLH6	STMicroelectronics	8-PowerVDFN

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