HSBB6115
P-Channel MOSFETThe HSBB6115 is a p-channel mosfet from Huashuo. View the full HSBB6115 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official HSBB6115 datasheet (PDF) — the source this page was extracted from.
HSBB6115 Key Specifications
| Parameter | Value |
|---|---|
| Package Dimensions | 3.35 x 3.30 mm nominal body, 0.75 mm height |
| Input Capacitance (Ciss) | 3635 pF |
| Gate-Source Voltage (VGS) | ±20V |
| Drain-Source Voltage (VDS) | -60V |
| Pulsed Drain Current (IDM) | -70A |
| RDS(ON) (VGS=-10V, ID=-10A) | 20 mΩ typ, 25 mΩ max |
| RDS(ON) (VGS=-4.5V, ID=-8A) | 25 mΩ typ, 33 mΩ max |
| Total Gate Charge (Qg, -4.5V) | 25 nC |
| Gate Threshold Voltage (VGS(Th)) | -1.0V to -2.5V |
| Power Dissipation (PD, TC=25°C) | 5.2W |
| Single Pulse Avalanche Energy (EAS) | 113 mJ |
| Operating Junction Temperature Range | -55°C to 150°C |
| Continuous Drain Current (ID, TC=25°C) | -26A |
| Continuous Drain Current (ID, TC=100°C) | -16A |
| Thermal Resistance Junction-Ambient (RθJA) | 62 °C/W max |
HSBB6115 Overview
Part: HSBB6115
Type: P-Ch 60V Fast Switching MOSFET
Description: P-channel MOSFET with -60V Drain-Source Voltage, 20 mΩ typical On-Resistance, and -26A Drain Current, featuring advanced high cell density Trench Technology for synchronous buck converter applications.
Operating Conditions:
- Operating junction temperature: -55 to 150 °C
Absolute Maximum Ratings:
- Max Drain-Source Voltage: -60 V
- Max Gate-Source Voltage: ±20 V
- Max continuous Drain Current: -26 A (at T_C=25°C, V_GS=-10V)
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV_DSS): -60 V (min, V_GS=0V, I_D=-250μA)
- Static Drain-Source On-Resistance (R_DS(ON)): 20 mΩ (typ, V_GS=-10V, I_D=-10A)
- Static Drain-Source On-Resistance (R_DS(ON)): 25 mΩ (typ, V_GS=-4.5V, I_D=-8A)
- Gate Threshold Voltage (V_GS(th)): -1.0 V (min), -1.7 V (typ), -2.5 V (max)
- Drain-Source Leakage Current (I_DSS): 1 μA (max, V_DS=-48V, V_GS=0V, T_J=25°C)
- Total Gate Charge (Q_g): 25 nC (typ, V_DS=-20V, V_GS=-4.5V, I_D=-12A)
- Input Capacitance (C_iss): 3635 pF (typ, V_DS=-15V, V_GS=0V, f=1MHz)
- Turn-On Delay Time (T_d(on)): 38 ns (typ, V_DD=-15V, V_GS=-10V, R_G=3.3Ω, I_D=-1A)
Features:
- 100% EAS Guaranteed
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench Technology
Applications:
- Synchronous buck converter applications
Package:
- PRPAK3*3
HSBB6115 Features
- 100% EAS Guaranteed
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench Technology
HSBB6115 Pin Configuration
HSBB6115 Electrical Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BV DSS | Drain-Source Breakdown Voltage | V GS =0V , I D =-250μA | -60 | --- | --- | V |
| △ BV DSS /△ T J | BV DSS Temperature Coefficient | Reference to 25 °C , I D =-1mA | --- | -0.035 | --- | V/ °C |
| R DS(ON) | Static Drain-Source On-Resistance 2 | V GS =-10V , I D =-10A | --- | 20 | 25 | m |
| R DS(ON) | Static Drain-Source On-Resistance 2 | V GS =-4.5V , I D =-8A | --- | 25 | 33 | m |
| V GS(th) | Gate Threshold Voltage | V GS =V DS , I D =-250μA | -1.0 | -1.7 | -2.5 | V |
| △ V GS(th) | V GS(th) Temperature Coefficient | V GS =V DS , I D =-250μA | --- | 4.28 | --- | mV/ °C |
| I DSS | Drain-Source Leakage Current | V DS =-48V , V GS =0V , T J =25 °C | --- | --- | 1 | μA |
| I DSS | Drain-Source Leakage Current | V DS =-48V , V GS =0V , T J =55 °C | --- | --- | 5 | μA |
| I GSS | Gate-Source Leakage Current | V GS = ± 20V , V DS =0V | --- | --- | ± 100 | nA |
| gfs | Forward Transconductance | V DS =-10V , I D =-12A | --- | 23 | --- | S |
| R g | Gate Resistance | V DS =0V , V GS =0V , f=1MHz | --- | 7 | --- | |
| Q g | Total Gate Charge (-4.5V) | V DS =-20V , V GS =-4.5V , I D =-12A | --- | 25 | --- | nC |
| Q gs | Gate-Source Charge | V DS =-20V , V GS =-4.5V , I D =-12A | --- | 6.7 | --- | nC |
| Q gd | Gate-Drain Charge | V DS =-20V , V GS =-4.5V , I D =-12A | --- | 5.5 | --- | nC |
| T d(on) | Turn-On Delay Time | V DD =-15V , V GS =-10V , R G =3.3 , I D =-1A | --- | 38 | --- | ns |
| T r | Rise Time | V DD =-15V , V GS =-10V , R G =3.3 , I D =-1A | --- | 23.6 | --- | ns |
| T d(off) | Turn-Off Delay Time | V DD =-15V , V GS =-10V , R G =3.3 , I D =-1A | --- | 100 | --- | ns |
| T f | Fall Time | V DD =-15V , V GS =-10V , R G =3.3 , I D =-1A | --- | 6.8 | --- | ns |
| C iss | Input Capacitance | V DS =-15V , V GS =0V , f=1MHz | --- | 3635 | --- | pF |
| C oss | Output Capacitance | V DS =-15V , V GS =0V , f=1MHz | --- | 224 | --- | pF |
| C rss | Reverse Transfer Capacitance | V DS =-15V , V GS =0V , f=1MHz | --- | 141 | --- | pF |
HSBB6115 Absolute Maximum Ratings
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| V DS | Drain-Source Voltage | -60 | V |
| V GS | Gate-Sou r ce Voltage | ± 20 | V |
| I D @T C =25 °C | Continuous Drain Current, -V GS @-10V 1 | -26 | A |
| I D @T C =100 °C | Continuous Drain Current, -V GS @-10V 1 | -16 | A |
| I DM | Pulsed Drain Current 2 | -70 | A |
| EAS | Single Pulse Avalanche Energy 3 | 113 | mJ |
| I AS | Avalanche Current | 47.6 | A |
| P D @T C =25 °C | Total Power Dissipation 4 | 5.2 | W |
| T STG | Storage Temperature Range | -55 to 150 | °C |
| T J | Operating Junction Temperature Range | -55 to 150 | °C |
HSBB6115 Thermal Information
| Symbol | Parameter | Typ. | Max. | Unit |
|---|---|---|---|---|
| R θJA | Thermal Resistance Junction-Ambient | --- | 62 | °C /W |
| R θJC | Thermal Resistance Junction-Case 1 | --- | 4 | °C /W |
HSBB6115 Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Millimeters | Dimensions In Millimeters |
|---|---|---|---|
| Symbol | Min. | Nom. | Max. |
| A | 0.70 | 0.75 | 0.80 |
| b | 0.25 | 0.30 | 0.35 |
| C | 0.10 | 0.15 | 0.25 |
| D | 3.25 | 3.35 | 3.45 |
| D1 | 3.00 | 3.10 | 3.20 |
| D2 | 1.48 | 1.58 | 1.68 |
| D3 | - | 0.13 | - |
| E | 3.15 | 3.30 | 3.45 |
| E1 | 3.00 | 3.15 | 3.20 |
| E2 | 2.39 | 2.49 | 2.59 |
| e | 0.65BSC | 0.65BSC | 0.65BSC |
| H | 0.30 | 0.39 | 0.50 |
| L | 0.30 | 0.40 | 0.50 |
| L1 | - | 0.13 | - |
| M | * | * | 0.15 |
| θ | 10° | 12° |
Other MOSFETs
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- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- IRF540N – Infineon Technologies, Power MOSFET
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