HSBB6115
Product Summary
Package
PRPAK3x3-8L
Overview
Part: HSBB6115
Type: P-Channel MOSFET
Key Specs:
- Drain-Source Voltage (V_DS): -60 V
- On-Resistance (R_DS(ON),typ): 20 mΩ
- Continuous Drain Current (I_D @T_C=25°C): -26 A
- Single Pulse Avalanche Energy (EAS): 113 mJ
Features:
- 100% EAS Guaranteed
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench Technology
Applications:
- Synchronous buck converter applications
Package:
- PRPAK3*3: Dimensions not specified
Features
- 100% EAS Guaranteed
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench Technology
Pin Configuration
Absolute Maximum Ratings
| Symbol Parameter | Rating | Units | |
|---|---|---|---|
| V DS | Drain-Source Voltage | -60 | V |
| V GS | Gate-Source Voltage | ±20 | V |
| I D @T C =25°C | Continuous Drain Current, -V GS @ -10V 1 | -26 | Α |
| I D @T C =100°C | Continuous Drain Current, -V GS @ -10V 1 | -16 | Α |
| I DM | Pulsed Drain Current 2 | -70 | Α |
| EAS | Single Pulse Avalanche Energy 3 | 113 | mJ |
| I AS | Avalanche Current | 47.6 | Α |
| P D @T C =25°C | Total Power Dissipation 4 | 5.2 | W |
| T STG | Storage Temperature Range | -55 to 150 | °C |
| TJ | Operating Junction Temperature Range | -55 to 150 | °C |
Thermal Data
| Symbol Parameter | Typ. | Max. | Unit | |
|---|---|---|---|---|
| RθJA | Thermal Resistance Junction-Ambient 1 | 62 | °C/W | |
| R 0 JC | Thermal Resistance Junction-Case 1 | 4 | °C/W |
Electrical Characteristics (TJ=25 °C, unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BV DSS | Drain-Source Breakdown Voltage | V GS =0V , I D =-250uA | -60 | V | ||
| △BV DSS /△T J | BV DSS Temperature Coefficient | Reference to 25°C , I D =-1mA | -0.035 | V/°C | ||
| D | Static Drain-Source On-Resistance 2 | V GS =-10V , I D =-10A | 20 | 25 | m0 | |
| R DS(ON) | Static Dialii-Source On-Resistance | VGS =-4.5 $V$ , ID =-8 $A$ | 25 | 33 | mΩ | |
| VGS(th) | Gate Threshold Voltage | V GS =V DS . In =-250uA | -1.0 | -1.7 | -2.5 | V |
| triangle VGS(th) | V GS(th) Temperature Coefficient | V GS -V DS , I D 250uA | 4.28 | mV/°C | ||
| Drain Source Leakage Current | V DS =-48V , V GS =0V , T J =25°C | 1 | uA | |||
| I DSS | Drain-Source Leakage Current | V DS =-48V , V GS =0V , T J =55°C | 5 | uA | ||
| I GSS | Gate-Source Leakage Current | VGS=± 20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | V DS =-10V , I D =-12A | 23 | S | ||
| Rg | Gate Resistance | V DS =0V , V GS =0V , f=1MHz | 7 | Ω | ||
| Qg | Total Gate Charge (-4.5V) | 25 | ||||
| Qgs | Gate-Source Charge | VDS =-20V , VGS =-4.5V , ID =-12A | 6.7 | nC | ||
| Qgd | Gate-Drain Charge | 5.5 | ||||
| Td(on) | Turn-On Delay Time | 38 | ||||
| Tr | Rise Time | VDD =-15V , VGS =-10V , RG =3.3 Ω , | 23.6 | , no | ||
| T d(off) | Turn-Off Delay Time | I D =-1A | 100 | ns | ||
| T f | Fall Time | 6.8 | ||||
| Ciss | Input Capacitance | 3635 | ||||
| Coss | Output Capacitance | V DS =-15V , V GS =0V , f=1MHz | 224 | pF | ||
| Crss | Reverse Transfer Capacitance | 141 |
Diode Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Is | Continuous Source Current 1,5 | V G =V D =0V , Force Current | -26 | Α | ||
| I SM | Pulsed Source Current 2,5 | VG-VD-UV , FOICE Current | -70 | Α | ||
| VSD | Diode Forward Voltage 2 | V GS =0V , I S =-1A , T J =25°C | -1 | V |
Note:
- 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2.The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%
-
- The EAS data shows Max. rating . The test condition is VDD =-25V, VGS =-10V, L=0.1mH, IAS =-47.6A
-
- The power dissipation is limited by 150°C junction temperature
- 5.The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Electrical Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BV DSS | Drain-Source Breakdown Voltage | V GS =0V , I D =-250uA | -60 | V | ||
| △BV DSS /△T J | BV DSS Temperature Coefficient | Reference to 25°C , I D =-1mA | -0.035 | V/°C | ||
| D | Static Drain-Source On-Resistance 2 | V GS =-10V , I D =-10A | 20 | 25 | m0 | |
| R DS(ON) | Static Dialii-Source On-Resistance | VGS =-4.5 $V$ , ID =-8 $A$ | 25 | 33 | mΩ | |
| VGS(th) | Gate Threshold Voltage | V GS =V DS . In =-250uA | -1.0 | -1.7 | -2.5 | V |
| triangle VGS(th) | V GS(th) Temperature Coefficient | V GS -V DS , I D 250uA | 4.28 | mV/°C | ||
| Drain Source Leakage Current | V DS =-48V , V GS =0V , T J =25°C | 1 | uA | |||
| I DSS | Drain-Source Leakage Current | V DS =-48V , V GS =0V , T J =55°C | 5 | uA | ||
| I GSS | Gate-Source Leakage Current | VGS=± 20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | V DS =-10V , I D =-12A | 23 | S | ||
| Rg | Gate Resistance | V DS =0V , V GS =0V , f=1MHz | 7 | Ω | ||
| Qg | Total Gate Charge (-4.5V) | 25 | ||||
| Qgs | Gate-Source Charge | VDS =-20V , VGS =-4.5V , ID =-12A | 6.7 | nC | ||
| Qgd | Gate-Drain Charge | 5.5 | ||||
| Td(on) | Turn-On Delay Time | 38 | ||||
| Tr | Rise Time | VDD =-15V , VGS =-10V , RG =3.3 Ω , | 23.6 | , no | ||
| T d(off) | Turn-Off Delay Time | I D =-1A | 100 | ns | ||
| T f | Fall Time | 6.8 | ||||
| Ciss | Input Capacitance | 3635 | ||||
| Coss | Output Capacitance | V DS =-15V , V GS =0V , f=1MHz | 224 | pF | ||
| Crss | Reverse Transfer Capacitance | 141 |
Diode Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Is | Continuous Source Current 1,5 | V G =V D =0V , Force Current | -26 | Α | ||
| I SM | Pulsed Source Current 2,5 | VG-VD-UV , FOICE Current | -70 | Α | ||
| VSD | Diode Forward Voltage 2 | V GS =0V , I S =-1A , T J =25°C | -1 | V |
Note:
- 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2.The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%
-
- The EAS data shows Max. rating . The test condition is VDD =-25V, VGS =-10V, L=0.1mH, IAS =-47.6A
-
- The power dissipation is limited by 150°C junction temperature
- 5.The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Absolute Maximum Ratings
| Symbol Parameter | Rating | Units | |
|---|---|---|---|
| V DS | Drain-Source Voltage | -60 | V |
| V GS | Gate-Source Voltage | ±20 | V |
| I D @T C =25°C | Continuous Drain Current, -V GS @ -10V 1 | -26 | Α |
| I D @T C =100°C | Continuous Drain Current, -V GS @ -10V 1 | -16 | Α |
| I DM | Pulsed Drain Current 2 | -70 | Α |
| EAS | Single Pulse Avalanche Energy 3 | 113 | mJ |
| I AS | Avalanche Current | 47.6 | Α |
| P D @T C =25°C | Total Power Dissipation 4 | 5.2 | W |
| T STG | Storage Temperature Range | -55 to 150 | °C |
| TJ | Operating Junction Temperature Range | -55 to 150 | °C |
Thermal Information
| Symbol Parameter | Typ. | Max. | Unit | |
|---|---|---|---|---|
| RθJA | Thermal Resistance Junction-Ambient 1 | 62 | °C/W | |
| R 0 JC | Thermal Resistance Junction-Case 1 | 4 | °C/W |
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