IRLML6344

Electric Characteristics @ $T_J = 25$ °C (unless otherwise specified)

Manufacturer

unknown

Overview

Part: IRLML6344TRPbF Type: HEXFET-Power MOSFET

Key Specs:

  • Drain-Source Voltage (VDS): 30 V
  • Gate-to-Source Voltage (VGS Max): ± 12 V
  • Static Drain-to-Source On-Resistance (RDS(on) max @VGS = 4.5V): 29 mΩ
  • Static Drain-to-Source On-Resistance (RDS(on) max @VGS = 2.5V): 37 mΩ
  • Continuous Drain Current (ID @ TA = 25°C, VGS @ 10V): 5.0 A
  • Maximum Power Dissipation (PD @TA = 25°C): 1.3 W
  • Junction and Storage Temperature Range (TJ, TSTG): -55 to +150 °C

Features:

  • Low RDSon (<29mΩ)
  • Industry-standard SOT-23 Package
  • RoHS compliant containing no lead, no bromide and no halogen
  • MSL1, Consumer Qualification

Applications:

  • Load/ System Switch

Package:

  • Micro3™(SOT-23)

Features

Low RDSon (<29mΩ)Lower Conduction Losses
Industry-standard SOT-23 PackageMulti-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogenresults inEnvironmentally friendly
MSL1, Consumer QualificationIncreased Reliability
Lower Conduction Losses
Multi-vendor compatibility
Environmentally friendly
Increased Reliability

| | | Standard Pack | |------------------|-----------------|------------------|------|-----------------------| | Base Part Number | Package Type | Form
Quantity | | Orderable Part Number | | IRLML6344TRPbF | Micro3™(SOT-23) | Tape and Reel | 3000 | IRLML6344TRPbF |

Absolute Maximum Ratings

SymbolParameterMax.Units
VDSDrain-Source Voltage30V
ID @ TA = 25°CContinuous Drain Current, VGS @ 10V5.0
ID @ TA = 70°CContinuous Drain Current, VGS @ 10V4.0A
IDMPulsed Drain Current25
PD @TA = 25°CMaximum Power Dissipation1.3
PD @TA = 70°CMaximum Power Dissipation0.8W
Linear Derating Factor0.01W/°C
VGSGate-to-Source Voltage± 12V
TJ, TSTGJunction and Storage Temperature Range-55 to + 150°C

Thermal Information

SymbolParameterTyp.Max.Units
RθJAJunction-to-Ambient–––100
RθJAJunction-to-Ambient (t<10s)–––99°C/W
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