2N7002K
N-Channel Enhancement Mode MOSFETThe 2N7002K is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full 2N7002K datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official 2N7002K datasheet (PDF) — the source this page was extracted from.
2N7002K Key Specifications
| Parameter | Value |
|---|---|
| ESD Protection | 2kV |
| Turn-On Delay Time | 3.9ns typ |
| Turn-Off Delay Time | 15.7ns typ |
| Power Dissipation (PD) | 370mW (min pad), 540mW (1in² FR-4) |
| Total Gate Charge (Qg) | 0.3nC typ |
| Input Capacitance (Ciss) | 30pF typ |
| Gate-Source Voltage (VGSS) | ±20V |
| Pulsed Drain Current (IDM) | 1.2A |
| Drain-Source Voltage (VDSS) | 60V |
| Operating Temperature Range | -55°C to +150°C |
| RDS(ON) Max (VGS=10V, ID=0.5A) | 2.0Ω |
| RDS(ON) Max (VGS=5V, ID=0.05A) | 3.0Ω |
| Body Diode Forward Current (IS) | 0.5A |
| Gate Threshold Voltage (VGS(TH)) | 1.0V to 2.5V |
| Continuous Drain Current (VGS=5V, TA=25°C, Steady State) | 310mA |
| Continuous Drain Current (VGS=10V, TA=25°C, Steady State) | 380mA |
2N7002K Overview
Part: 2N7002K — Diodes Incorporated
Type: N-Channel Enhancement Mode MOSFET
Description: 60 V, 380 mA N-channel enhancement mode MOSFET with 2 Ω maximum on-resistance and integrated 2 kV ESD protection.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max continuous current: 380 mA (Continuous Drain Current, VGS = 10 V, TA = +25 °C, Steady State)
- Max junction/storage temperature: -55 to +150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BVDSS): 60 V min (VGS = 0 V, ID = 10 μA)
- Gate Threshold Voltage (VGS(TH)): 1.0 V min, 1.6 V typ, 2.5 V max (VDS = 10 V, ID = 1 mA)
- Static Drain-Source On-Resistance (RDS(ON)): 2.0 Ω max (VGS = 10 V, ID = 0.5 A)
- Static Drain-Source On-Resistance (RDS(ON)): 3.0 Ω max (VGS = 5 V, ID = 0.05 A)
- Zero Gate Voltage Drain Current (IDSS): 1.0 μA max (VDS = 60 V, VGS = 0 V)
- Gate-Source Leakage Current (IGSS): ±10 μA max (VGS = ±20 V, VDS = 0 V)
- Diode Forward Voltage (VSD): 0.75 V typ, 1.1 V max (VGS = 0 V, IS = 115 mA)
- Input Capacitance (Ciss): 30 pF typ, 50 pF max (VDS = 25 V, VGS = 0 V, f = 1.0 MHz)
- Total Gate Charge (Qg): 0.3 nC typ (VGS = 4.5 V, VDS = 10 V, ID = 250 mA)
Features:
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- ESD protected up to 2 kV
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. 'Green' Device
Applications:
- Motor Control
- Power Management Functions
- Backlighting
Package:
- SOT23 (Standard)
2N7002K Features
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected up to 2kV
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at
https://www.diodes.com/products/automotive/automotiveproducts/.
- This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
- https://www.diodes.com/quality/product-definitions/
- An Automotive-Compliant Part is Available Under Separate Datasheet (2N7002KQ)
2N7002K Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Motor Control
- Power Management Functions
- Backlighting
SOT23 (Standard)
ESD protected up to 2kV
Top View
2N7002K Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 60 | - | - | V | V GS = 0V, I D = 10μA |
| Zero Gate Voltage Drain Current | I DSS | - | - | 1.0 | μA | V DS = 60V, V GS = 0V |
| Gate-Source Leakage | I GSS | - | - | ±10 | μA | V GS = ±20V, V DS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | V GS(TH) | 1.0 | 1.6 | 2.5 | V | V DS = 10V, I D = 1mA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 1.2 1.4 | 2.0 3.0 | Ω | V GS = 10V, I D = 0.5A V GS = 5V, I D = 0.05A |
| Forward Transfer Admittance | \ | Y fs \ | 80 | - | - | |
| Diode Forward Voltage | V SD | - | 0.75 | 1.1 | V | V GS = 0V, I S = 115mA |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | C iss | - | 30 | 50 | pF | V DS = 25V, V GS = 0V f = 1.0MHz |
| Output Capacitance | C oss | - | 4.2 | 25 | pF | V DS = 25V, V GS = 0V f = 1.0MHz |
| Reverse Transfer Capacitance | C rss | - | 2.9 | 5.0 | pF | V DS = 25V, V GS = 0V f = 1.0MHz |
| Gate Resistance | R g | - | 133 | - | Ω | f = 1MHz , V GS = 0V, V DS = 0V |
| Total Gate Charge | Qg | - | 0.3 | - | nC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Source Charge | Qgs | - | 0.2 | - | nC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Drain Charge | Qgd | - | 0.08 | - | nC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Turn-On Delay Time | t D(ON) | - | 3.9 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-On Rise Time | t R | - | 3.4 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-Off Delay Time | t D(OFF) | - | 15.7 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
| Turn-Off Fall Time | t F | - | 9.9 | - | ns | V DD = 30V, V GS = 10V, R G = 25Ω, I D = 200mA |
Notes:
-
Short duration pulse test used to minimize self-heating effect.
-
Guaranteed by design. Not subject to product testing.
2N7002K
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2N7002K Absolute Maximum Ratings
| Characteristic | Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | V DSS | 60 | V |
| Gate-Source Voltage | Gate-Source Voltage | Gate-Source Voltage | V GSS | ±20 | V |
| Continuous Drain Current (Note 6) V GS = 10V | Steady State | T A = +25° C T A = +70° C | I D | 380 300 | mA |
| Continuous Drain Current (Note 6) V GS = 10V | t<5s | T A = +25° C T A = +70° C | I D | 430 340 | mA |
| Continuous Drain Current (Note 6) V GS = 5V | Steady State | T A = +25° C T A = +70° C | I D | 310 240 | mA |
| Continuous Drain Current (Note 6) V GS = 5V | t<5s | T A = +25° C T A = +70° C | I D | 350 270 | mA |
| Maximum Continuous Body Diode Forward Current (Note 6) | Maximum Continuous Body Diode Forward Current (Note 6) | Maximum Continuous Body Diode Forward Current (Note 6) | I S | 0.5 | A |
| Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) (Note 6) | Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) (Note 6) | Pulsed Drain Current (10μ s Pulse, Duty Cycle = 1%) (Note 6) | I DM | 1.2 | A |
2N7002K Thermal Information
| Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|
| Total Power Dissipation (Note 5) | Total Power Dissipation (Note 5) | P D | 370 | mW |
| Thermal Resistance, Junction to Ambient (Note 5) | Steady State | R θJA | 357 | ° C/W |
| t<5s | R θJA | 292 | ° C/W | |
| Total Power Dissipation (Note 6) | Total Power Dissipation (Note 6) | P D | 540 | mW |
| Thermal Resistance, Junction to Ambient (Note 6) | Steady State | R θJA | 240 | ° C/W |
| Thermal Resistance, Junction to Ambient (Note 6) | t<5s | R θJA | 197 | ° C/W |
| Thermal Resistance, Junction to Case (Note 6) | Thermal Resistance, Junction to Case (Note 6) | R θJC | 91 | ° C/W |
| Operating and Storage Temperature Range | Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
2N7002K Package Information
- Case: SOT23
- Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3
- Weight: 0.008 grams (Approximate)
Equivalent Circuit
Top View
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Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| 2N7002K-13 | Diodes Incorporated | SOT23 |
| 2N7002K-7 | Diodes Incorporated | SOT-23 |
| 2N7002KQ | Diodes Incorporated | SOT23 |
Other MOSFETs
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- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- STL110N10F7 – STMicroelectronics, N-channel Power MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
- 20N06L – onsemi, Power MOSFET
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