2N7000
N-channel Power MOSFETThe 2N7000 is a n-channel power mosfet from onsemi. View the full 2N7000 datasheet below including key specifications, electrical characteristics.
Official 2N7000 datasheet (PDF) — the source this page was extracted from.
2N7000 Key Specifications
| Parameter | Value |
|---|---|
| Packaging | Bulk |
| Standard Pack Qty | 10000 |
| Case/Package | TO-92-3 |
| China RoHS | Compliant |
| Contact Plating | Copper, Silver, Tin |
| Continuous Drain Current (ID) | 200 mA |
| Continuous Drain Current | 200mA (Tc) |
| Current Rating | 200 mA |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 5 Ω |
| Drain to Source Voltage (Vds) | 60 V |
| Drain-Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Element Configuration | Single |
| Fall Time | 10 ns |
| FET Type | N-Channel |
| Gate to Source Voltage (Vgs) | 30 V |
| Height | 5.33 mm |
| Input Capacitance | 50 pF |
| Input Capacitance (Ciss) | 50 pF @ 25 V |
| Introduction Date | 2013-11-14 |
| Lead Free | Lead Free |
| Length | 5.2 mm |
| Lifecycle Status | Production (Last Updated: 3 weeks ago) |
| Manufacturer Package Identifier | TO-92 3L |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 400 mW |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Power Dissipation | 400 mW |
| Power Dissipation (Max) | 400mW (Ta) |
| Radiation Hardening | No |
| Rds(on) | 5Ohm @ 500mA, 10V Ω |
| Rds On Max | 5 Ω |
| REACH SVHC | Unaffected |
| Resistance | 5 Ω |
| Rise Time | 10 ns |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Supplier Device Package | TO-92-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Threshold Voltage | 3.9 V |
| Turn-Off Delay Time | 10 ns |
| Turn-On Delay Time | 10 ns |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 3V @ 1mA |
| Voltage Rating (DC) | 60 V |
| Width | 4.19 mm |
2N7000 Overview
Part: STMicroelectronics 2N7000, 2N7002
Type: N-channel Power MOSFET
Description: N-channel Power MOSFETs with 60 V drain-source voltage, 1.8 Ω typical on-resistance, and up to 0.35 A continuous drain current, available in TO-92 and SOT23-3L packages.
Operating Conditions:
- Supply voltage: Up to 60 V (Drain-source)
- Storage temperature: -55 to 150 °C
- Max continuous drain current: 0.35 A (TO-92), 0.20 A (SOT23-3L) at T_C = 25 °C
Absolute Maximum Ratings:
- Max supply voltage: 60 V (Drain-source)
- Max continuous current: 0.35 A (TO-92), 0.20 A (SOT23-3L) at T_C = 25 °C
- Max gate-source voltage: ±18 V
- Max storage temperature: 150 °C
Key Specs:
- Drain-source breakdown voltage V(BR)DSS: 60 V (min, I_D = 250 μA, V_GS = 0)
- Zero gate voltage drain current I_DSS: 1 μA (max, V_DS = max rating, V_GS = 0)
- Gate threshold voltage V_GS(th): 1 V (min) to 3 V (max, V_DS = V_GS, I_D = 250 μA)
- Static drain-source on resistance R_DS(on): 1.8 Ω (typ, V_GS = 10 V, I_D = 0.5 A)
- Input capacitance C_iss: 43 pF (typ, V_DS = 25 V, f = 1 MHz, V_GS = 0)
- Total gate charge Q_g: 1.4 nC (typ, V_DD = 30 V, I_D = 1 A, V_GS = 5 V)
- Turn-on delay time t_d(on): 5 ns (typ, V_DD = 30 V, I_D = 0.5 A, R_G = 4.7 Ω, V_GS = 4.5 V)
- Forward transconductance g_fs: 0.6 S (typ, V_DS = 10 V, I_D = 0.5 A)
Features:
- Low Q_g
- Low threshold drive
Applications:
- Switching applications
Package:
- TO-92
- SOT23-3L
2N7000 Features
| Type | V DSS | R DS(on) max | I D |
|---|---|---|---|
| 2N7000 | 60 V | < 5 Ω (@10V) | 0.35 A |
| 2N7002 | 60 V | < 5 Ω (@10V) | 0.20 A |
■ Low Q g ■ Low threshold drive Application ■ Switching applications Description This Power MOSFET is the second generation of STMicroelectronics unique 'single feature size' strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram Table 1. Device summary Obsolete Product(s) - Obsolete Product(s)
2N7000 Electrical Characteristics
(T CASE = 25 °C unless otherwise specified)
Table 4. On/off states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-source breakdown voltage | I D = 250 μA, V GS =0 | 60 | V | ||
| I DSS | Zero gate voltage drain current (V GS = 0) | V DS = max rating V DS = max rating, T C = 125 °C | 1 10 | μA μA | ||
| I GSS | Gate-body leakage current (V DS = 0) | V GS = ± 18 V | Product(s) | ±100 | nA | |
| V GS(th) | Gate threshold voltage | V DS = V GS , I D = 250 μA | 1 | 2.1 | 3 | V |
| R DS(on) | Static drain-source on resistance | V GS = 10 V, I D = 0.5 A V GS = 4.5 V, I D = 0.5 A | 1.8 2 | 5 5.3 | Ω Ω |
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| g fs (1) | Forward transconductance | V DS = 10 V , I D = 0.5 A - | 0.6 | S | ||
| C iss C oss C rss | Input capacitance Output capacitance Reverse transfer capacitance Product(s) | V DS = 25 V, f = 1 MHz, V GS = 0 | 43 20 6 | pF pF pF | ||
| t d(on) t r t d(off) t f | Turn-on delay time Rise time Turn-off delay time Fall time | V DD = 30 V, I D = 0.5 A R G = 4.7 Ω V GS = 4.5 V (see Figure 16 ) | 5 15 7 8 | ns ns ns ns | ||
| Q g Q gs Q gd | Total gate charge Gate-source charge Gate-drain charge | V DD = 30 V, I D = 1 A, V GS = 5 V (see Figure 17 ) | 1.4 0.8 0.5 | 2 | nC nC nC |
Table 5. Dynamic 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%. Obsolete Product(s) - Obsolete Product(s)
Table 6. Source drain diode
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| I SD I SDM (1) | Source-drain current Source-drain current (pulsed) | 0.35 1.40 | A A | |||
| V SD (2) | Forward on voltage | I SD = 1 A, V GS = 0 | 1.2 | V | ||
| t rr Q rr I RRM | Reverse recovery time Reverse recovery charge Reverse recovery current | I SD = 1 A, di/dt = 100 A/μs, V DD = 20 V, T j = 150 °C (see Figure 18 ) | 32 25 1.6 | ns nC A |
- Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5% Obsolete Product(s) - Obsolete Product(s)
Table 6. Source drain diode
2N7000 Package Information
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
Table 7. TO-92 mechanical data
| Dim. | mm | mm | mm |
|---|---|---|---|
| Dim. | Min. | Typ. | Max. |
| A | 4.32 | 4.95 | |
| b | 0.36 | 0.51 | |
| D | 4.45 | 4.95 | |
| E | 3.30 | 3.94 | |
| e | 2.41 | 2.67 | |
| e1 | 1.14 | 1.40 | |
| L | 12.70 | 15.49 | |
| R | 2.16 | 2.41 | |
| S1 | 0.92 | 1.52 | |
| W | 0.41 | 0.56 | |
| V | 5° | Product(s) |
Table 7. TO-92 mechanical data
Figure 22. TO-92 drawing Obsolete Product(s) - Obsolete Product(s)
Table 8. SOT23-3L mechanical data
| Dim. | mm | mm | mm |
|---|---|---|---|
| Dim. | Min. | Typ. | Max. |
| A | 1.25 | ||
| A1 | 0 | 0.15 | |
| A2 | 1.00 | 1.20 | |
| A3 | 0.60 | 0.70 | |
| D | 2.826 | 3.026 | |
| E | 2.60 | 3.00 | |
| E1 | 1.526 | 1.726 | |
| e | 0.95 | ||
| e1 | 1.90 | Product(s) | |
| L | 0.35 | 0.60 | |
| L1 | 0.59 | ||
| L2 | 0.25 | ||
| R | 0.05 | ||
| R1 | 0.05 | 0.20 | |
| K | 3° | Obsolete | 7° |
| K1 | 6° - | 10° |
Table 8. SOT23-3L mechanical data
Figure 23. SOT23-3L drawing Obsolete Product(s) - Obsolete Product(s)
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- IRF540NPBF – Infineon Technologies, Power MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- STL110N10F7 – STMicroelectronics, N-channel Power MOSFET
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