2N7000

N-channel Power MOSFET

The 2N7000 is a n-channel power mosfet from onsemi. View the full 2N7000 datasheet below including electrical characteristics.

Manufacturer

onsemi

Overview

Part: STMicroelectronics 2N7000, 2N7002

Type: N-channel Power MOSFET

Description: N-channel Power MOSFETs with 60 V drain-source voltage, 1.8 Ω typical on-resistance, and up to 0.35 A continuous drain current, available in TO-92 and SOT23-3L packages.

Operating Conditions:

Supply voltage: Up to 60 V (Drain-source)
Storage temperature: -55 to 150 °C
Max continuous drain current: 0.35 A (TO-92), 0.20 A (SOT23-3L) at T_C = 25 °C

Absolute Maximum Ratings:

Max supply voltage: 60 V (Drain-source)
Max continuous current: 0.35 A (TO-92), 0.20 A (SOT23-3L) at T_C = 25 °C
Max gate-source voltage: ±18 V
Max storage temperature: 150 °C

Key Specs:

Drain-source breakdown voltage V(BR)DSS: 60 V (min, I_D = 250 μA, V_GS = 0)
Zero gate voltage drain current I_DSS: 1 μA (max, V_DS = max rating, V_GS = 0)
Gate threshold voltage V_GS(th): 1 V (min) to 3 V (max, V_DS = V_GS, I_D = 250 μA)
Static drain-source on resistance R_DS(on): 1.8 Ω (typ, V_GS = 10 V, I_D = 0.5 A)
Input capacitance C_iss: 43 pF (typ, V_DS = 25 V, f = 1 MHz, V_GS = 0)
Total gate charge Q_g: 1.4 nC (typ, V_DD = 30 V, I_D = 1 A, V_GS = 5 V)
Turn-on delay time t_d(on): 5 ns (typ, V_DD = 30 V, I_D = 0.5 A, R_G = 4.7 Ω, V_GS = 4.5 V)
Forward transconductance g_fs: 0.6 S (typ, V_DS = 10 V, I_D = 0.5 A)

Features:

Low Q_g
Low threshold drive

Applications:

Switching applications

Package:

TO-92
SOT23-3L

Features

Type	V DSS	R DS(on) max	I D
2N7000	60 V	< 5 Ω (@10V)	0.35 A
2N7002	60 V	< 5 Ω (@10V)	0.20 A

■ Low Q g ■ Low threshold drive Application ■ Switching applications Description This Power MOSFET is the second generation of STMicroelectronics unique 'single feature size' strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram Table 1. Device summary Obsolete Product(s) - Obsolete Product(s)

Electrical Characteristics

(T CASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V (BR)DSS	Drain-source breakdown voltage	I D = 250 μA, V GS =0	60			V
I DSS	Zero gate voltage drain current (V GS = 0)	V DS = max rating V DS = max rating, T C = 125 °C			1 10	μA μA
I GSS	Gate-body leakage current (V DS = 0)	V GS = ± 18 V		Product(s)	±100	nA
V GS(th)	Gate threshold voltage	V DS = V GS , I D = 250 μA	1	2.1	3	V
R DS(on)	Static drain-source on resistance	V GS = 10 V, I D = 0.5 A V GS = 4.5 V, I D = 0.5 A		1.8 2	5 5.3	Ω Ω

Symbol	Parameter	Test conditions	Typ.	Max.	Unit
g fs (1)	Forward transconductance	V DS = 10 V , I D = 0.5 A -	0.6		S
C iss C oss C rss	Input capacitance Output capacitance Reverse transfer capacitance Product(s)	V DS = 25 V, f = 1 MHz, V GS = 0	43 20 6		pF pF pF
t d(on) t r t d(off) t f	Turn-on delay time Rise time Turn-off delay time Fall time	V DD = 30 V, I D = 0.5 A R G = 4.7 Ω V GS = 4.5 V (see Figure 16 )	5 15 7 8		ns ns ns ns
Q g Q gs Q gd	Total gate charge Gate-source charge Gate-drain charge	V DD = 30 V, I D = 1 A, V GS = 5 V (see Figure 17 )	1.4 0.8 0.5	2	nC nC nC

Table 5. Dynamic 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%. Obsolete Product(s) - Obsolete Product(s)

Table 6. Source drain diode

Symbol	Parameter	Test conditions	Typ.	Max.	Unit
I SD I SDM (1)	Source-drain current Source-drain current (pulsed)			0.35 1.40	A A
V SD (2)	Forward on voltage	I SD = 1 A, V GS = 0		1.2	V
t rr Q rr I RRM	Reverse recovery time Reverse recovery charge Reverse recovery current	I SD = 1 A, di/dt = 100 A/μs, V DD = 20 V, T j = 150 °C (see Figure 18 )	32 25 1.6		ns nC A

Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5% Obsolete Product(s) - Obsolete Product(s)

Table 6. Source drain diode

Package Information

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

Table 7. TO-92 mechanical data

Dim.	mm	mm	mm
Dim.	Min.	Typ.	Max.
A	4.32		4.95
b	0.36		0.51
D	4.45		4.95
E	3.30		3.94
e	2.41		2.67
e1	1.14		1.40
L	12.70		15.49
R	2.16		2.41
S1	0.92		1.52
W	0.41		0.56
V		5°	Product(s)

Table 7. TO-92 mechanical data

Figure 22. TO-92 drawing Obsolete Product(s) - Obsolete Product(s)

Table 8. SOT23-3L mechanical data

Dim.	mm	mm	mm
Dim.	Min.	Typ.	Max.
A			1.25
A1	0		0.15
A2	1.00		1.20
A3	0.60		0.70
D	2.826		3.026
E	2.60		3.00
E1	1.526		1.726
e		0.95
e1		1.90	Product(s)
L	0.35		0.60
L1		0.59
L2		0.25
R	0.05
R1	0.05		0.20
K	3°	Obsolete	7°
K1	6° -		10°

Table 8. SOT23-3L mechanical data

Figure 23. SOT23-3L drawing Obsolete Product(s) - Obsolete Product(s)

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