2N7000

Part 1: Markdown Summary

Part: STMicroelectronics 2N7000/2N7002

Type: N-channel Power MOSFET

Key Specs:

• Drain-source voltage (V_DSS): 60 V
• Static drain-source on-resistance (R_DS(on)): 1.8 Ω (typ, @V_GS=10V, I_D=0.5A)
• Drain current (I_D): 0.35 A (2N7000 at T_C=25°C)
• Drain current (I_D): 0.20 A (2N7002 at T_C=25°C)

Features:

• Low Qq
• Low threshold drive
• High packing density for low on-resistance
• Rugged avalanche characteristics
• Remarkable manufacturing reproducibility

Applications:

• Switching applications

Package:

• TO-92
• SOT23-3L

Type	V DSS	R DS(on) max	I D
2N7000	60 V	< 5 Ω(@10V)	0.35 A
2N7002	60 V	< 5 Ω(@10V)	0.20 A

• Low Q_q
• Low threshold drive

(T_CASE = 25 °C unless otherwise specified)

On/off states Table 4.

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
V (BR)DSS	Drain-source breakdown voltage	I D = 250 μA, V GS =0	60			٧
I DSS	Zero gate voltage drain current (V GS = 0)	$V_{DS}$ = max rating $V_{DS}$ = max rating, $T_{C}$ = 125 °C			1 10	μ Α μ Α
I GSS	Gate-body leakage current (V DS = 0)	V GS = ± 18 V		AU	±100	nA
V GS(th)	Gate threshold voltage	$V_{DS} = V_{GS}, I_{D} = 250 \mu A$	.1C	2.1	3	٧
R DS(on)	Static drain-source on resistance	$V_{GS} = 10 \text{ V}, I_D = 0.5 \text{ A}$ $V_{GS} = 4.5 \text{ V}, I_D = 0.5 \text{ A}$		1.8 2	5 5.3	Ω Ω
Table 5.	Dynamic	colere
		- 10 - 1
Table 5. Dynamic

	Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
	g fs (1)	Forward transconductance	$V_{DS} = 10 \text{ V}, I_{D} = 0.5 \text{ A}$		0.6		S
	C iss C oss C rss	Input capacitance Output capacitance Reverse transfer capacitance	$V_{DS} = 25 \text{ V, f} = 1 \text{ MHz,}$ $V_{GS} = 0$		43 20 6		pF pF pF
9/6	t d(on) t r t d(off) t f	Turn-on delay time Rise time Turn-off delay time Fall time	$V_{DD} = 30 \text{ V}, I_{D} = 0.5 \text{ A}$ $R_{G} = 4.7 \Omega V_{GS} = 4.5 \text{ V}$ (see Figure 16 )		5 15 7 8		ns ns ns
Opso	Q g Q gs Q gd	Total gate charge Gate-source charge Gate-drain charge	$V_{DD} = 30 \text{ V}, I_D = 1 \text{ A},$ $V_{GS} = 5 \text{ V}$ (see Figure 17 )		1.4 0.8 0.5	2	nC nC nC

^1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.

2N7000, 2N7002 Electrical characteristics

Table 6. Source drain diode

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
I SD	Source-drain current				0.35	Α
I SDM (1)	Source-drain current (pulsed)				1.40	Α
V SD (2)	Forward on voltage	I SD = 1 A, V GS = 0			1.2	٧
t rr	Reverse recovery time	$I_{SD} = 1 \text{ A, di/dt} = 100 \text{ A/µs,}$		32		ns
Q rr I RRM	Reverse recovery charge Reverse recovery current	$V_{DD} = 20 \text{ V}, T_j = 150 \text{ °C}$ (see Figure 18 )		25 1.6		nC A
1 Pulse wid	Ith limited by safe operating are	a. cle 1.5%
2 Pulsed	Pulse duration = 300 us, duty ov	a. cle 1 5%			10
L. 1 01000.1	and daration – 500 po, duty by	0.0 1.0 / 0			-1/1-	7 1
				111	J - 1
				$O_{i,n}$
		<	270	)
		1 2/6
		7/6,
		1250.
		00-
	*(2)
	1.101
	90,
	(0)
V
×6,
6
Electrical characteristics 2N7000, 2N7002