AO3400A

Part: null (AOS)

Type: Power MOSFET

Key Specs:

• Drain-Source Breakdown Voltage: 30 V (Min)
• Gate Threshold Voltage: 0.65 V (Min), 1.05 V (Typ), 1.45 V (Max)
• On-State Drain Current (VGS=4.5V, VDS=5V): 30 A (Min)
• Static Drain-Source On-Resistance (VGS=10V, ID=5.7A): 18 mW (Typ), 26.5 mW (Max)
• Total Gate Charge (VGS=4.5V, VDS=15V, ID=5.7A): 6 nC (Typ), 7 nC (Max)
• Maximum Body-Diode Continuous Current: 2 A (Typ)

Features:

• null

Applications:

• null

Package:

• null

Symbol	Parameter	Conditions		Min	Typ	Max	Units
STATIC PARAMETERS
BVDSS	Drain-Source Breakdown Voltage	ID=250mA, VGS=0V		30			V
IDSS	Zero Gate Voltage Drain Current	VDS=30V, VGS=0V	TJ=55°C			1 5	mA
IGSS	Gate-Body leakage current	VDS=0V, VGS= ±12V				100	nA
VGS(th)	Gate Threshold Voltage	VDS=VGS ID=250mA		0.65	1.05	1.45	V
ID(ON)	On state drain current	VGS=4.5V, VDS=5V		30			A
RDS(ON)	Static Drain-Source On-Resistance	VGS=10V, ID=5.7A			18	26.5
			TJ=125°C		28	38	mW
		VGS=4.5V, ID=5A			19	32	mW
		VGS=2.5V, ID=3A			24	48	mW
gFS	Forward Transconductance	VDS=5V, ID=5.7A			33		S
VSD	Diode Forward Voltage	IS=1A,VGS=0V			0.7	1	V
IS	Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS				2	A
Ciss	Input Capacitance	VGS=0V, VDS=15V, f=1MHz			630		pF
Coss	Output Capacitance				75		pF
Crss	Reverse Transfer Capacitance				50		pF
Rg	Gate resistance SWITCHING PARAMETERS	VGS=0V, VDS=0V, f=1MHz		1.5	3	4.5	W
Qg	Total Gate Charge	VGS=4.5V, VDS=15V, ID=5.7A			6	7	nC
Qgs	Gate Source Charge				1.3		nC
Qgd	Gate Drain Charge				1.8		nC
tD(on)	Turn-On DelayTime	VGS=10V, VDS=15V, RL=2.6W, RGEN=3W			3		ns
tr	Turn-On Rise Time				2.5		ns
tD(off)	Turn-Off DelayTime				25		ns
tf	Turn-Off Fall Time				4		ns
trr	Body Diode Reverse Recovery Time	IF=5.7A, dI/dt=100A/ms			8.5		ns
Qrr	Body Diode Reverse Recovery Charge	IF=5.7A, dI/dt=100A/ms			2.6		nC

A. The value of R^qJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T^A =25°C. The value in any given application depends on the user's specific board design.

B. The power dissipation P^D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.

D. The R^qJA is the sum of the thermal impedence from junction to lead R^qJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms\_and\_conditions\_of\_sale

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Diode Recovery Test Circuit & Waveforms