AO3400A

Part: AO3400A — AOS

Type: N-Channel MOSFET

Description: 30V N-Channel MOSFET with 5.7 A continuous drain current and a maximum on-resistance of 26.5 mΩ at V_GS=10V.

Operating Conditions:

• Drain-Source Voltage: 0–30 V
• Gate-Source Voltage: ±12 V
• Operating temperature: -55 to 150 °C

Absolute Maximum Ratings:

• Max supply voltage: 30 V (Drain-Source Voltage)
• Max continuous current: 5.7 A (Continuous Drain Current at T_A=25°C)
• Max junction/storage temperature: 150 °C

Key Specs:

• Drain-Source Breakdown Voltage (BV_DSS): 30 V (min) at I_D=250 μA, V_GS=0V
• Gate Threshold Voltage (V_GS(th)): 0.65 V (min) to 1.45 V (max) at V_DS=V_GS, I_D=250 μA
• Static Drain-Source On-Resistance (R_DS(ON)): 26.5 mΩ (max) at V_GS=10V, I_D=5.7A
• Static Drain-Source On-Resistance (R_DS(ON)): 32 mΩ (max) at V_GS=4.5V, I_D=5A
• Input Capacitance (C_iss): 630 pF (typ) at V_GS=0V, V_DS=15V, f=1MHz
• Total Gate Charge (Q_g): 7 nC (max) at V_GS=4.5V, V_DS=15V, I_D=5.7A
• Turn-On Delay Time (t_D(on)): 3 ns (typ) at V_GS=10V, V_DS=15V, R_L=2.6Ω
• Body Diode Forward Voltage (V_SD): 1 V (max) at I_S=1A, V_GS=0V

Features:

• Advanced trench MOSFET technology
• Low resistance package
• Extremely low R_DS(ON)

Applications:

• Load switch
• PWM applications

Package:

• SOT23

Pin	Name	Type	Description
1	G	I	Gate
2	S	P	Source
3	D	P	Drain

Symbol	Parameter	Conditions	Min	Typ	Max	Units
STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS
BV DSS	Drain-Source Breakdown Voltage	I D =250 m A, V GS =0V	30			V
I	Zero Gate Voltage Drain Current	V DS =30V, V GS =0V			1	m A
DSS		V DS =30V, V GS =0V	T J =55° C		5
I GSS	Gate-Body leakage current	V DS =0V, V GS = ±12V			100	nA
V GS(th)	Gate Threshold Voltage	V DS =V GS I D =250 m A	0.65	1.05	1.45	V
I D(ON)	On state drain current	V GS =4.5V, V DS =5V	30			A
R DS(ON)	Static Drain-Source On-Resistance	V GS =10V, I D =5.7A		18	26.5	m W
	Static Drain-Source On-Resistance	V GS =10V, I D =5.7A	J =125° C	28	38	m W
		V GS =4.5V, I D =5A		19	32	m W
		V GS =2.5V, I D =3A		24	48	m W
g FS	Forward Transconductance	V DS =5V, I D =5.7A		33		S
V SD	Diode Forward Voltage	I S =1A,V GS =0V		0.7	1	V
I S	Maximum Body-Diode Continuous Current	Maximum Body-Diode Continuous Current			2	A
DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS
C iss	Input Capacitance	V GS =0V, V DS =15V, f=1MHz		630		pF
C oss	Output Capacitance	V GS =0V, V DS =15V, f=1MHz		75		pF
C rss	Reverse Transfer Capacitance	V GS =0V, V DS =15V, f=1MHz		50		pF
R g	Gate resistance	V GS =0V, V DS =0V, f=1MHz	1.5	3	4.5	W
SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS
Q g	Total Gate Charge	V GS =4.5V, V DS =15V, I D =5.7A		6	7	nC
Q gs	Gate Source Charge	V GS =4.5V, V DS =15V, I D =5.7A		1.3		nC
Q gd	Gate Drain Charge	V GS =4.5V, V DS =15V, I D =5.7A		1.8		nC
t D(on)	Turn-On DelayTime	V GS =10V, V DS =15V, R L =2.6 W R GEN =3 W		3		ns
t r	Turn-On Rise Time	V GS =10V, V DS =15V, R L =2.6 W R GEN =3 W	,	2.5		ns
t D(off)	Turn-Off DelayTime	V GS =10V, V DS =15V, R L =2.6 W R GEN =3 W		25		ns
t f	Turn-Off Fall Time	V GS =10V, V DS =15V, R L =2.6 W R GEN =3 W		4		ns
t rr	Body Diode Reverse Recovery Time	I F =5.7A, dI/dt=100A/ m s		8.5		ns
Q rr	Body Diode Reverse Recovery Charge	I F =5.7A, dI/dt=100A/ m s		2.6		nC

• C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150 ° C. Ratings are based on low frequency and duty cycles to keep initialT J=25 ° C.
• D. The R q JA is the sum of the thermal impedence from junction to lead R q JL and lead to ambient.
• E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max.
• F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150 ° C. The SOA curve provides a single pulse rating.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

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VDS (Volts) Fig 1: On-Region Characteristics (Note E)

VDS (Volts) Fig 1: On-Region Characteristics (Note E)

D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)

0 18 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature (Note E)

0 18 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature (Note E)