2N7002

N-channel Trench MOSFET

The 2N7002 is a n-channel trench mosfet from Shenzhen Slkormicro Semicon Co., Ltd.. View the full 2N7002 datasheet below including key specifications, pinout.

Manufacturer

Shenzhen Slkormicro Semicon Co., Ltd.

Key Specifications

Parameter	Value
Continuous Drain Current	600mA (Ta)
Drain-Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg)	4 nC @ 10 V
Input Capacitance (Ciss)	474 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	1.3W (Ta)
Rds(on)	3Ohm @ 600mA, 10V Ω
Supplier Device Package	SOT-23
Supplier Device Package	SOT-23
Supplier Device Package	SOT-23
Supplier Device Package	SOT-23
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	1V @ 250µA

Overview

Part: 2N7002 — Nexperia

Type: N-channel Enhancement Mode Field-Effect Transistor (FET)

Description: 60 V, 300 mA N-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology, suitable for logic level gate drive sources and very fast switching.

Operating Conditions:

Drain-source voltage: up to 60 V
Gate-source voltage: -30 to 30 V
Operating temperature: -65 to 150 °C (junction)
Max continuous drain current (Tsp = 100 °C): 190 mA

Absolute Maximum Ratings:

Max drain-source voltage: 60 V
Max continuous drain current: 300 mA (VGS = 10 V; Tsp = 25 °C)
Max junction/storage temperature: 150 °C

Key Specs:

Drain-source breakdown voltage V(BR)DSS: 60 V (min, ID = 10 μA; VGS = 0 V; Tj = 25 °C)
Gate-source threshold voltage VGSth: 1 V (min) to 2.5 V (max) (ID = 0.25 mA; VDS = VGS; Tj = 25 °C)
Drain-source on-state resistance RDSon: 2.8 Ω (typ), 5 Ω (max) (VGS = 10 V; ID = 500 mA; Tj = 25 °C)
Drain leakage current IDSS: 0.01 μA (typ), 1 μA (max) (VDS = 48 V; VGS = 0 V; Tj = 25 °C)
Input capacitance Ciss: 31 pF (typ), 50 pF (max) (VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C)
Turn-on time ton: 2.5 ns (typ), 10 ns (max) (VGS = 10 V; VDS = 50 V; RL = 250 Ω)
Turn-off time toff: 11 ns (typ), 15 ns (max) (VGS = 10 V; VDS = 50 V; RL = 250 Ω)
Total power dissipation Ptot: 0.83 W (Tsp = 25 °C)

Features:

Suitable for logic level gate drive sources
Very fast switching
Surface-mounted package
Trench MOSFET technology

Applications:

Logic level translators
High-speed line drivers

Package:

TO-236AB (plastic surface-mounted package; 3 leads)

Features

Suitable for logic level gate drive sources
Very fast switching

Pin Configuration

Pin	Name	Type	Description
1	G	I	Gate
2	S	P	Source
3	D	P	Drain

Thermal Information

Table 6. Thermal characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
R th(j-a)	thermal resistance from junction to ambient	Mounted on a printed-circuit board; minimum footprint ; vertical in still air	-	-	350	K/W
R th(j-sp)	thermal resistance from junction to solder point	see Figure 4	-	-	150	K/W

Table 6. Thermal characteristics

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

Package Information

UNIT	A	A 1 max.	b p	c	D	E	e	e 1	H E	L p	Q	v	w
mm	1.1 0.9	0.1	0.48 0.38	0.15 0.09	3.0 2.8	1.4 1.2	1.9	0.95	2.5 2.1	0.45 0.15	0.55 0.45	0.2	0.1

OUTLINE VERSION	REFERENCES	REFERENCES	REFERENCES	EUROPEAN	ISSUE DATE
OUTLINE VERSION	IEC	JEDEC	JEITA	PROJECTION
SOT23		TO-236AB			04-11-04 06-03-16

Fig 13. Package outline SOT23 (TO-236AB)

Fig 13. Package outline SOT23 (TO-236AB)

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
2N7002T	Diodes Incorporated	SOT-523

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free