2N7002

N-channel Trench MOSFET

The 2N7002 is a n-channel trench mosfet from Nexperia. View the full 2N7002 datasheet below including key specifications, pinout.

Official 2N7002 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

2N7002 Key Specifications

Parameter	Value
Continuous Drain Current	600mA (Ta)
Drain-Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
FET Type	N-Channel
Gate Charge (Qg)	4 nC @ 10 V
Input Capacitance (Ciss)	474 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	1.3W (Ta)
Rds(on)	3Ohm @ 600mA, 10V Ω
Supplier Device Package	SOT-23
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	1V @ 250µA

2N7002 Overview

Part: 2N7002 — Nexperia

Type: N-channel Enhancement Mode Field-Effect Transistor (FET)

Description: 60 V, 300 mA N-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology, suitable for logic level gate drive sources and very fast switching.

Operating Conditions:

Drain-source voltage: up to 60 V
Gate-source voltage: -30 to 30 V
Operating temperature: -65 to 150 °C (junction)
Max continuous drain current (Tsp = 100 °C): 190 mA

Absolute Maximum Ratings:

Max drain-source voltage: 60 V
Max continuous drain current: 300 mA (VGS = 10 V; Tsp = 25 °C)
Max junction/storage temperature: 150 °C

Key Specs:

Drain-source breakdown voltage V(BR)DSS: 60 V (min, ID = 10 μA; VGS = 0 V; Tj = 25 °C)
Gate-source threshold voltage VGSth: 1 V (min) to 2.5 V (max) (ID = 0.25 mA; VDS = VGS; Tj = 25 °C)
Drain-source on-state resistance RDSon: 2.8 Ω (typ), 5 Ω (max) (VGS = 10 V; ID = 500 mA; Tj = 25 °C)
Drain leakage current IDSS: 0.01 μA (typ), 1 μA (max) (VDS = 48 V; VGS = 0 V; Tj = 25 °C)
Input capacitance Ciss: 31 pF (typ), 50 pF (max) (VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C)
Turn-on time ton: 2.5 ns (typ), 10 ns (max) (VGS = 10 V; VDS = 50 V; RL = 250 Ω)
Turn-off time toff: 11 ns (typ), 15 ns (max) (VGS = 10 V; VDS = 50 V; RL = 250 Ω)
Total power dissipation Ptot: 0.83 W (Tsp = 25 °C)

Features:

Suitable for logic level gate drive sources
Very fast switching
Surface-mounted package
Trench MOSFET technology

Applications:

Logic level translators
High-speed line drivers

Package:

TO-236AB (plastic surface-mounted package; 3 leads)

2N7002 Features

Suitable for logic level gate drive sources
Very fast switching

2N7002 Pin Configuration

Pin	Name	Type	Description
1	G	I	Gate
2	S	P	Source
3	D	P	Drain

2N7002 Thermal Information

Table 6. Thermal characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
R th(j-a)	thermal resistance from junction to ambient	Mounted on a printed-circuit board; minimum footprint ; vertical in still air	-	-	350	K/W
R th(j-sp)	thermal resistance from junction to solder point	see Figure 4	-	-	150	K/W

Table 6. Thermal characteristics

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

2N7002 Package Information

UNIT	A	A 1 max.	b p	c	D	E	e	e 1	H E	L p	Q	v	w
mm	1.1 0.9	0.1	0.48 0.38	0.15 0.09	3.0 2.8	1.4 1.2	1.9	0.95	2.5 2.1	0.45 0.15	0.55 0.45	0.2	0.1

OUTLINE VERSION	REFERENCES	REFERENCES	REFERENCES	EUROPEAN	ISSUE DATE
OUTLINE VERSION	IEC	JEDEC	JEITA	PROJECTION
SOT23		TO-236AB			04-11-04 06-03-16

Fig 13. Package outline SOT23 (TO-236AB)

Fig 13. Package outline SOT23 (TO-236AB)

More part numbers on this datasheet

Their pages show this same datasheet. Some are linked through their part family rather than checked part by part, so confirm the exact part in the ordering information.

2N7002T

Other MOSFETs

20N06D – onsemi, Power MOSFET
AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
IRF540NPBF – Infineon Technologies, Power MOSFET
2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
STL110N10F7 – STMicroelectronics, N-channel Power MOSFET

All MOSFETs datasheets All Nexperia datasheets (54)

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