2N7002

2N7002

Overview

Part: 2N7002

Type: N-channel Trench MOSFET

Key Specs:

  • Drain-source voltage: 60 V
  • Drain current: 300 mA
  • Total power dissipation: 0.83 W
  • Drain-source on-state resistance (max): 5 Ω

Features:

  • Suitable for logic level gate drive sources
  • Very fast switching
  • Surface-mounted package
  • Trench MOSFET technology

Applications:

  • Logic level translators
  • High-speed line drivers

Package:

  • TO-236AB (SOT23)

Features

  • Suitable for logic level gate drive sources

  • Very fast switching

  • Surface-mounted package

  • Trench MOSFET technology

Thermal Information

Table 6. Thermal characteristics

SymbolParameterConditionsMinTypMaxUnit
Rth(j-a)thermal resistance
from junction to
ambient		Mounted on a printed-circuit board; minimum footprint; vertical in still air--350K/W
R th(j-sp)thermal resistance
from junction to solder
point		see Figure 4--150K/W

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

60 V, 300 mA N-channel Trench MOSFET

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