2N7002T

The 2N7002T is an electronic component from ElecSuper. View the full 2N7002T datasheet below including key specifications.

Manufacturer

ElecSuper

Key Specifications

Parameter	Value
Current - Continuous Drain(Id)	300mA
Drain to Source Voltage	60V
Gate Charge(Qg)	1.8nC@4.5V
Gate Threshold Voltage (Vgs(th))	1.6V
Input Capacitance(Ciss)	28pF
Number	1 N-channel
Operating Temperature	-55℃~+150℃ °C
Pd - Power Dissipation	350mW
RDS(on)	1.85Ω@10V;2.05Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)	4pF
Type	N-Channel

Overview

Part: 2N7002 — Nexperia

Type: N-channel Enhancement Mode Field-Effect Transistor (FET)

Description: 60 V, 300 mA N-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology, suitable for logic level gate drive sources and very fast switching.

Operating Conditions:

Drain-source voltage: up to 60 V
Gate-source voltage: -30 to 30 V
Operating temperature: -65 to 150 °C (junction)
Max continuous drain current (Tsp = 100 °C): 190 mA

Absolute Maximum Ratings:

Max drain-source voltage: 60 V
Max continuous drain current: 300 mA (VGS = 10 V; Tsp = 25 °C)
Max junction/storage temperature: 150 °C

Key Specs:

Drain-source breakdown voltage V(BR)DSS: 60 V (min, ID = 10 μA; VGS = 0 V; Tj = 25 °C)
Gate-source threshold voltage VGSth: 1 V (min) to 2.5 V (max) (ID = 0.25 mA; VDS = VGS; Tj = 25 °C)
Drain-source on-state resistance RDSon: 2.8 Ω (typ), 5 Ω (max) (VGS = 10 V; ID = 500 mA; Tj = 25 °C)
Drain leakage current IDSS: 0.01 μA (typ), 1 μA (max) (VDS = 48 V; VGS = 0 V; Tj = 25 °C)
Input capacitance Ciss: 31 pF (typ), 50 pF (max) (VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C)
Turn-on time ton: 2.5 ns (typ), 10 ns (max) (VGS = 10 V; VDS = 50 V; RL = 250 Ω)
Turn-off time toff: 11 ns (typ), 15 ns (max) (VGS = 10 V; VDS = 50 V; RL = 250 Ω)
Total power dissipation Ptot: 0.83 W (Tsp = 25 °C)

Features:

Suitable for logic level gate drive sources
Very fast switching
Surface-mounted package
Trench MOSFET technology

Applications:

Logic level translators
High-speed line drivers

Package:

TO-236AB (plastic surface-mounted package; 3 leads)

Features

Suitable for logic level gate drive sources
Very fast switching

Thermal Information

Table 6. Thermal characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
R th(j-a)	thermal resistance from junction to ambient	Mounted on a printed-circuit board; minimum footprint ; vertical in still air	-	-	350	K/W
R th(j-sp)	thermal resistance from junction to solder point	see Figure 4	-	-	150	K/W

Table 6. Thermal characteristics

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

Package Information

UNIT	A	A 1 max.	b p	c	D	E	e	e 1	H E	L p	Q	v	w
mm	1.1 0.9	0.1	0.48 0.38	0.15 0.09	3.0 2.8	1.4 1.2	1.9	0.95	2.5 2.1	0.45 0.15	0.55 0.45	0.2	0.1

OUTLINE VERSION	REFERENCES	REFERENCES	REFERENCES	EUROPEAN	ISSUE DATE
OUTLINE VERSION	IEC	JEDEC	JEITA	PROJECTION
SOT23		TO-236AB			04-11-04 06-03-16

Fig 13. Package outline SOT23 (TO-236AB)

Fig 13. Package outline SOT23 (TO-236AB)

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
2N7002	Nexperia	TO-236AB

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