2N7002T
The 2N7002T is an electronic component from Diodes Incorporated. View the full 2N7002T datasheet below including key specifications.
Manufacturer
Diodes Incorporated
Category
MOSFETs
Package
SOT-523
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 300mA (Ta) |
| Current - Continuous Drain(Id) | 300mA |
| Current - Continuous Drain(Id) | 300mA |
| Current - Continuous Drain(Id) | 300mA |
| Current - Continuous Drain(Id) | 300mA |
| Drain to Source Voltage | 60V |
| Drain to Source Voltage | 60V |
| Drain to Source Voltage | 60V |
| Drain to Source Voltage | 60V |
| Drain-Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge(Qg) | 1.8nC@4.5V |
| Gate Charge(Qg) | 1.8nC@4.5V |
| Gate Charge(Qg) | 1.8nC@4.5V |
| Gate Charge(Qg) | 1.8nC@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Input Capacitance (Ciss) | 50 pF @ 25 V |
| Input Capacitance(Ciss) | 28pF |
| Input Capacitance(Ciss) | 28pF |
| Input Capacitance(Ciss) | 28pF |
| Input Capacitance(Ciss) | 28pF |
| Mounting Type | Surface Mount |
| Number | 1 N-channel |
| Number | 1 N-channel |
| Number | 1 N-channel |
| Number | 1 N-channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Operating Temperature | -55℃~+150℃ °C |
| Package / Case | SOT-523 |
| Packaging | MouseReel |
| Pd - Power Dissipation | 350mW |
| Pd - Power Dissipation | 350mW |
| Pd - Power Dissipation | 350mW |
| Pd - Power Dissipation | 350mW |
| Power Dissipation (Max) | 350mW (Ta) |
| Rds(on) | 3Ohm @ 500mA, 10V Ω |
| RDS(on) | 1.85Ω@10V;2.05Ω@4.5V |
| RDS(on) | 1.85Ω@10V;2.05Ω@4.5V |
| RDS(on) | 1.85Ω@10V;2.05Ω@4.5V |
| RDS(on) | 1.85Ω@10V;2.05Ω@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Standard Pack Qty | 3000 |
| Supplier Device Package | SOT-523 |
| Diode Technology | MOSFET (Metal Oxide) |
| Type | N-Channel |
| Type | N-Channel |
| Type | N-Channel |
| Type | N-Channel |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 2.5V @ 250µA |
Overview
Part: 2N7002 — Nexperia
Type: N-channel Enhancement Mode Field-Effect Transistor (FET)
Description: 60 V, 300 mA N-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology, suitable for logic level gate drive sources and very fast switching.
Operating Conditions:
- Drain-source voltage: up to 60 V
- Gate-source voltage: -30 to 30 V
- Operating temperature: -65 to 150 °C (junction)
- Max continuous drain current (Tsp = 100 °C): 190 mA
Absolute Maximum Ratings:
- Max drain-source voltage: 60 V
- Max continuous drain current: 300 mA (VGS = 10 V; Tsp = 25 °C)
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-source breakdown voltage V(BR)DSS: 60 V (min, ID = 10 μA; VGS = 0 V; Tj = 25 °C)
- Gate-source threshold voltage VGSth: 1 V (min) to 2.5 V (max) (ID = 0.25 mA; VDS = VGS; Tj = 25 °C)
- Drain-source on-state resistance RDSon: 2.8 Ω (typ), 5 Ω (max) (VGS = 10 V; ID = 500 mA; Tj = 25 °C)
- Drain leakage current IDSS: 0.01 μA (typ), 1 μA (max) (VDS = 48 V; VGS = 0 V; Tj = 25 °C)
- Input capacitance Ciss: 31 pF (typ), 50 pF (max) (VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C)
- Turn-on time ton: 2.5 ns (typ), 10 ns (max) (VGS = 10 V; VDS = 50 V; RL = 250 Ω)
- Turn-off time toff: 11 ns (typ), 15 ns (max) (VGS = 10 V; VDS = 50 V; RL = 250 Ω)
- Total power dissipation Ptot: 0.83 W (Tsp = 25 °C)
Features:
- Suitable for logic level gate drive sources
- Very fast switching
- Surface-mounted package
- Trench MOSFET technology
Applications:
- Logic level translators
- High-speed line drivers
Package:
- TO-236AB (plastic surface-mounted package; 3 leads)
Features
- Suitable for logic level gate drive sources
- Very fast switching
Thermal Information
Table 6. Thermal characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| R th(j-a) | thermal resistance from junction to ambient | Mounted on a printed-circuit board; minimum footprint ; vertical in still air | - | - | 350 | K/W |
| R th(j-sp) | thermal resistance from junction to solder point | see Figure 4 | - | - | 150 | K/W |
Table 6. Thermal characteristics
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
Package Information
| UNIT | A | A 1 max. | b p | c | D | E | e | e 1 | H E | L p | Q | v | w |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| mm | 1.1 0.9 | 0.1 | 0.48 0.38 | 0.15 0.09 | 3.0 2.8 | 1.4 1.2 | 1.9 | 0.95 | 2.5 2.1 | 0.45 0.15 | 0.55 0.45 | 0.2 | 0.1 |
| OUTLINE VERSION | REFERENCES | REFERENCES | REFERENCES | EUROPEAN | ISSUE DATE |
|---|---|---|---|---|---|
| OUTLINE VERSION | IEC | JEDEC | JEITA | PROJECTION | |
| SOT23 | TO-236AB | 04-11-04 06-03-16 |
Fig 13. Package outline SOT23 (TO-236AB)
Fig 13. Package outline SOT23 (TO-236AB)
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| 2N7002 | Shenzhen Slkormicro Semicon Co., Ltd. | TO-236-3, SC-59, SOT-23-3 |
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