2N7002T
The 2N7002T is an electronic component from Diodes Incorporated. View the full 2N7002T datasheet below including key specifications.
2N7002T shares its datasheet with 2N7002, whose page lists every part number it covers.
Official 2N7002T datasheet (PDF) — the source this page was extracted from.
2N7002T Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 300mA (Ta) |
| Current - Continuous Drain(Id) | 300mA |
| Drain to Source Voltage | 60V |
| Drain-Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge(Qg) | 1.8nC@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Input Capacitance (Ciss) | 50 pF @ 25 V |
| Input Capacitance(Ciss) | 28pF |
| Mounting Type | Surface Mount |
| Number | 1 N-channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Operating Temperature | -55℃~+150℃ °C |
| Package / Case | SOT-523 |
| Packaging | MouseReel |
| Pd - Power Dissipation | 350mW |
| Power Dissipation (Max) | 350mW (Ta) |
| Rds(on) | 3Ohm @ 500mA, 10V Ω |
| RDS(on) | 1.85Ω@10V;2.05Ω@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Standard Pack Qty | 3000 |
| Supplier Device Package | SOT-523 |
| Diode Technology | MOSFET (Metal Oxide) |
| Type | N-Channel |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 2.5V @ 250µA |
2N7002T Overview
Part: 2N7002 — Nexperia
Type: N-channel Enhancement Mode Field-Effect Transistor (FET)
Description: 60 V, 300 mA N-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology, suitable for logic level gate drive sources and very fast switching.
Operating Conditions:
- Drain-source voltage: up to 60 V
- Gate-source voltage: -30 to 30 V
- Operating temperature: -65 to 150 °C (junction)
- Max continuous drain current (Tsp = 100 °C): 190 mA
Absolute Maximum Ratings:
- Max drain-source voltage: 60 V
- Max continuous drain current: 300 mA (VGS = 10 V; Tsp = 25 °C)
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-source breakdown voltage V(BR)DSS: 60 V (min, ID = 10 μA; VGS = 0 V; Tj = 25 °C)
- Gate-source threshold voltage VGSth: 1 V (min) to 2.5 V (max) (ID = 0.25 mA; VDS = VGS; Tj = 25 °C)
- Drain-source on-state resistance RDSon: 2.8 Ω (typ), 5 Ω (max) (VGS = 10 V; ID = 500 mA; Tj = 25 °C)
- Drain leakage current IDSS: 0.01 μA (typ), 1 μA (max) (VDS = 48 V; VGS = 0 V; Tj = 25 °C)
- Input capacitance Ciss: 31 pF (typ), 50 pF (max) (VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C)
- Turn-on time ton: 2.5 ns (typ), 10 ns (max) (VGS = 10 V; VDS = 50 V; RL = 250 Ω)
- Turn-off time toff: 11 ns (typ), 15 ns (max) (VGS = 10 V; VDS = 50 V; RL = 250 Ω)
- Total power dissipation Ptot: 0.83 W (Tsp = 25 °C)
Features:
- Suitable for logic level gate drive sources
- Very fast switching
- Surface-mounted package
- Trench MOSFET technology
Applications:
- Logic level translators
- High-speed line drivers
Package:
- TO-236AB (plastic surface-mounted package; 3 leads)
2N7002T Features
- Suitable for logic level gate drive sources
- Very fast switching
2N7002T Thermal Information
Table 6. Thermal characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| R th(j-a) | thermal resistance from junction to ambient | Mounted on a printed-circuit board; minimum footprint ; vertical in still air | - | - | 350 | K/W |
| R th(j-sp) | thermal resistance from junction to solder point | see Figure 4 | - | - | 150 | K/W |
Table 6. Thermal characteristics
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
2N7002T Package Information
| UNIT | A | A 1 max. | b p | c | D | E | e | e 1 | H E | L p | Q | v | w |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| mm | 1.1 0.9 | 0.1 | 0.48 0.38 | 0.15 0.09 | 3.0 2.8 | 1.4 1.2 | 1.9 | 0.95 | 2.5 2.1 | 0.45 0.15 | 0.55 0.45 | 0.2 | 0.1 |
| OUTLINE VERSION | REFERENCES | REFERENCES | REFERENCES | EUROPEAN | ISSUE DATE |
|---|---|---|---|---|---|
| OUTLINE VERSION | IEC | JEDEC | JEITA | PROJECTION | |
| SOT23 | TO-236AB | 04-11-04 06-03-16 |
Fig 13. Package outline SOT23 (TO-236AB)
Fig 13. Package outline SOT23 (TO-236AB)
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
- ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET
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