IRF540NPBF

Power MOSFET

The IRF540NPBF is a power mosfet from Infineon Technologies. View the full IRF540NPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official IRF540NPBF datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

IRF540NPBF Key Specifications

Parameter	Value
Continuous Drain Current	33A (Tc)
Drain-Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg)	71 nC @ 10 V
Input Capacitance (Ciss)	1960 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-220-3
Packaging	Tube
Power Dissipation (Max)	130W (Tc)
Rds(on)	44mOhm @ 16A, 10V Ω
Standard Pack Qty	1000
Supplier Device Package	TO-220AB
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	4V @ 250µA

IRF540NPBF Overview

Part: IRF540NPBF — International Rectifier

Type: HEXFET Power MOSFET

Description: Advanced HEXFET Power MOSFET featuring ultra-low on-resistance, 100V drain-to-source breakdown voltage, and 33A continuous drain current, designed for efficient and reliable operation in a wide variety of applications.

Operating Conditions:

Gate-to-Source Voltage: ±20 V
Operating temperature: -55 to +175 °C

Absolute Maximum Ratings:

Max Drain-to-Source Voltage (V_DSS): 100 V
Max continuous Drain Current (I_D @ T_C = 25°C): 33 A
Max junction/storage temperature: 175 °C

Key Specs:

Drain-to-Source Breakdown Voltage (V_BR)DSS: 100 V (V_GS = 0V, I_D = 250μA)
Static Drain-to-Source On-Resistance (R_DS(on)): 44 mΩ (V_GS = 10V, I_D = 16A)
Gate Threshold Voltage (V_GS(th)): 2.0 V min, 4.0 V max (V_DS = V_GS, I_D = 250μA)
Total Gate Charge (Q_g): 71 nC (I_D = 16A, V_DS = 80V, V_GS = 10V)
Input Capacitance (C_iss): 1960 pF (V_GS = 0V, V_DS = 25V, ƒ = 1.0MHz)
Turn-On Delay Time (t_d(on)): 11 ns (V_DD = 50V, I_D = 16A, R_G = 5.1Ω, V_GS = 10V)
Peak Diode Recovery dv/dt: 7.0 V/ns (I_SD ≤ 16 A, di/dt ≤ 340A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C)
Continuous Source Current (Body Diode) (I_S): 33 A

Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

Package:

TO-220AB

IRF540NPBF Electrical Characteristics

	Parameter	Min.	Typ.	Max.	Units	Conditions
V (BR)DSS	Drain-to-Source Breakdown Voltage	100	---	---	V	V GS = 0V, I D = 250μA
∆ V (BR)DSS / ∆ T J	Breakdown Voltage Temp. Coefficient	---	0.12	---	V/°C	Reference to 25°C, I D = 1mA
R DS(on)	Static Drain-to-Source On-Resistance	---	---	44	m Ω	V GS = 10V, I D = 16A /foursans
V GS(th)	Gate Threshold Voltage	2.0	---	4.0	V	V DS = V GS , I D = 250μA
g fs	Forward Transconductance	21	---	---	S	V DS = 50V, I D = 16A /foursans
I DSS	Drain-to-Source Leakage Current	---	---	25	μA	V DS = 100V, V GS = 0V
	Drain-to-Source Leakage Current	---	---	250	μA	V DS = 80V, V GS = 0V, T J = 150°C
I GSS	Gate-to-Source Forward Leakage	---	---	100	nA	V GS = 20V
I GSS	Gate-to-Source Reverse Leakage	---	---	-100	nA	V GS = -20V
Q g	Total Gate Charge	---	---	71	nC	I D = 16A
Q gs	Gate-to-Source Charge	---	---	14	nC	V DS = 80V
Q gd	Gate-to-Drain ("Miller") Charge	---	---	21	nC	V GS = 10V, See Fig. 6 and 13
t d(on)	Turn-On Delay Time	---	11	---	ns	V DD = 50V
t r	Rise Time	---	35	---	ns	I D = 16A
t d(off)	Turn-Off Delay Time	---	39	---	ns	R G = 5.1 Ω
t f	Fall Time	---	35	---	nH	V GS = 10V, See Fig. 10 /foursans
L D	Internal Drain Inductance	---	4.5	---		Between lead, 6mm (0.25in.) G
L S	Internal Source Inductance	---	7.5	---		from package and center of die contact
C iss	Input Capacitance	---	1960	---	pF	V GS = 0V = 25V
C oss	Output Capacitance	---	250	---	pF	V DS
C rss	Reverse Transfer Capacitance	---	40	---		ƒ = 1.0MHz, See Fig. 5
E AS	Single Pulse Avalanche Energy /twosans	---	700 /fivesans	185 /sixsans	mJ	I AS = 16A, L = 1.5mH

IRF540NPBF Absolute Maximum Ratings

	Parameter	Max.	Units
I D @T C = 25°C	Continuous Drain Current, V GS @10V	33	A
I D @T C = 100°C	Continuous Drain Current, V GS @10V	23	A
I DM	Pulsed Drain Current /onesans	110	A
P D @T C = 25°C	Power Dissipation	130	W
	Linear Derating Factor	0.87	W/°C
V GS	Gate-to-Source Voltage	± 20	V
I AR	Avalanche Current /onesans	16	A
E AR	Repetitive Avalanche Energy /onesans	13	mJ
dv/dt	Peak Diode Recovery dv/dt /threesans	7.0	V/ns
T J T	Operating Junction and	-55 to + 175	°C
STG	Storage Temperature Range		°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

IRF540NPBF Thermal Information

	Parameter	Typ.	Max.	Units
R θ JC	Junction-to-Case	---	1.15
R θ CS	Case-to-Sink, Flat, Greased Surface	0.50	---	°C/W
R θ JA

RDS(on) = 44m Ω

ID = 33A

IRF540NPBF Package Information

Dimensions are shown in millimeters (inches)

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
IRF540N	Infineon Technologies	TO-220

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All MOSFETs datasheets All Infineon Technologies datasheets (140)

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