IRF540N
33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET
Manufacturer
infineon
Overview
Part: IRF540N from Fairchild Semiconductor
Type: N-Channel, Power MOSFET
Key Specs:
- Drain to Source Voltage: 100 V
- Drain to Gate Voltage: 100 V
- Gate to Source Voltage: ±20 V
- Drain to Source On Resistance: 0.040 Ω (max) at I_D = 33A, V_GS = 10V
- Drain Current: 33 A (at T_C = 25°C)
- Power Dissipation: 120 W
- Operating and Storage Temperature: -55 to 175 °C
Features:
- Ultra Low On-Resistance
- Simulation Models
- Temperature Compensated PSPICE™ and SABER© Electrical Models
- Spice and SABER© Thermal Impedance Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
Applications:
- null
Package:
- TO-220AB
Features
- Ultra Low On-Resistance
- $r_{DS(ON)} = 0.040\Omega$ , $V_{GS} = 10V$
- Simulation Models
- Temperature Compensated PSPICE™ and SABER© Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.fairchildsemi.com
- · Peak Current vs Pulse Width Curve
- · UIS Rating Curve
Electrical Characteristics
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN | TYP | MAX | UNITS | |
|---|---|---|---|---|---|---|---|
| OFF STATE SPECIFICATIONS | • | ||||||
| Drain to Source Breakdown Voltage | BV DSS | I D = 250μA, V GS = 0V (Figure 11) | 100 | - | - | V | |
| Zero Gate Voltage Drain Current | I DSS | V DS = 95V, V GS = 0V | - | - | 1 | μΑ | |
| V DS = 90V, V GS = 0V, T C = 150°C | - | - | 250 | μΑ | |||
| Gate to Source Leakage Current | I GSS | V GS = ±20V | - | - | ±100 | nA | |
| ON STATE SPECIFICATIONS | ' | • | |||||
| Gate to Source Threshold Voltage | V GS(TH) | $V_{GS} = V_{DS}, I_D = 250$ | DμA (Figure 10) | 2 | - | 4 | V |
| Drain to Source On Resistance | r DS(ON) | I D = 33A, V GS = 10\ | / (Figure 9) | - | 0.033 | 0.040 | Ω |
| THERMAL SPECIFICATIONS | 1 | ' | 1 | ||||
| Thermal Resistance Junction to Case | $R_{\theta JC}$ | TO-220 - | - | - | 1.25 | °C/W | |
| Thermal Resistance Junction to Ambient | $R_{\theta JA}$ | - | 62 | °C/W | |||
| SWITCHING SPECIFICATIONS (VGS | = 10V) | ||||||
| Turn-On Time | ton | $V_{DD} = 50V, I_D = 33A$ | - | - | 100 | ns | |
| Turn-On Delay Time | t d(ON) | $V_{GS} = 10V$ , | - | 9.5 | - | ns | |
| Rise Time | t r | $R_{GS} = 9.1\Omega$ (Figures 18, 19) | - | 57 | - | ns | |
| Turn-Off Delay Time | t d(OFF) | - | 40 | - | ns | ||
| Fall Time | t f | - | 55 | - | ns | ||
| Turn-Off Time | tOFF | - | - | 145 | ns | ||
| GATE CHARGE SPECIFICATIONS | |||||||
| Total Gate Charge | Q g(TOT) | V GS = 0V to 20V | V DD = 50V, | - | 66 | 79 | nC |
| Gate Charge at 10V | Q g(10) | V GS = 0V to 10V | $I_D = 33A$ , | - | 35 | 42 | nC |
| Threshold Gate Charge | Q g(TH) | V GS = 0V to 2V | I g(REF) = 1.0mA (Figures 13, 16, 17) | - | 2.4 | 2.9 | nC |
| Gate to Source Gate Charge | Q gs | (1 igales 10, 10, 17) | 5.4 | - | nC | ||
| Gate to Drain "Miller" Charge | Q gd | - | 13 | - | nC | ||
| CAPACITANCE SPECIFICATIONS | ' | ' | 1 | 1 | 1 | ||
| Input Capacitance | C ISS | $V_{DS} = 25V, V_{GS} = 0$ | V, | - | 1220 | - | pF |
| Output Capacitance | C OSS | f = 1MHz (Figure 12) | - | 295 | - | pF | |
| Reverse Transfer Capacitance | C RSS | (Figure 12) - 100 | - | pF |
Thermal Information
REV 26 July 1999
IRF540NT
CTHERM1 th 6 2.60e-3 CTHERM2 6 5 8.85e-3 CTHERM3 5 4 7.60e-3 CTHERM4 4 3 7.65e-3 CTHERM5 3 2 1.22e-2 CTHERM6 2 tl 8.70e-2 RTHERM1 th 6 9.00e-3 RTHERM2 6 5 1.80e-2 RTHERM3 5 4 9.15e-2 RTHERM4 4 3 2.43e-1 RTHERM5 3 2 3.10e-1 RTHERM6 2 tl 3.21e-1
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Get structured datasheet data via API
Get started free