IRF540N
Power MOSFETThe IRF540N is a power mosfet from Infineon Technologies. View the full IRF540N datasheet below including key specifications, electrical characteristics.
Manufacturer
Infineon Technologies
Category
MOSFETsKey Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 33A (Tc) |
| Drain-Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 71 nC @ 10 V |
| Input Capacitance (Ciss) | 1960 pF @ 25 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 130W (Tc) |
| Rds(on) | 44mOhm @ 16A, 10V Ω |
| Supplier Device Package | TO-220AB |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 4V @ 250µA |
Overview
Part: IRF540N from Fairchild Semiconductor
Type: N-Channel Power MOSFET
Description: 100V, 33A N-Channel Power MOSFET with 0.040 Ω on-resistance.
Operating Conditions:
- Supply voltage: 0–100 V (Drain to Source), ±20 V (Gate to Source)
- Operating temperature: -55 to 175 °C
- Max power dissipation: 120 W
- Gate to Source Threshold Voltage: 2 V (min) to 4 V (max)
Absolute Maximum Ratings:
- Max supply voltage: 100 V (Drain to Source)
- Max continuous current: 33 A (Drain Current at T C = 25 °C, V GS = 10V)
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain to Source Breakdown Voltage (BV DSS): 100 V (min) at I D = 250 μ A, V GS = 0V
- Zero Gate Voltage Drain Current (I DSS): 1 μ A (max) at V DS = 95V, V GS = 0V
- Gate to Source Threshold Voltage (V GS(TH)): 2 V (min) to 4 V (max) at V GS = V DS , I D = 250 μ A
- Drain to Source On Resistance (r DS(ON)): 0.040 Ω (max) at I D = 33A, V GS = 10V
- Thermal Resistance Junction to Case (R θ JC): 1.25 °C/W (max)
- Total Gate Charge (Q g(TOT)): 79 nC (max) at V DD = 50V, I D = 33A, V GS = 0V to 20V
- Input Capacitance (C ISS): 1220 pF (typ) at V DS = 25V, V GS = 0V, f = 1MHz
- Source to Drain Diode Voltage (V SD): 1.25 V (max) at I SD = 33A
Features:
- Ultra Low On-Resistance
- Simulation Models (Temperature Compensated PSPICE™ and SABER© Electrical Models, Spice and SABER© Thermal Impedance Models)
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
Package:
- TO-220AB
Features
- Ultra Low On-Resistance
- -r DS(ON) = 0.040 Ω, V GS = 10V
- Simulation Models
- -Temperature Compensated PSPICE™ and SABER © Electrical Models
- -Spice and SABER © Thermal Impedance Models
- -www.fairchildsemi.com
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
Electrical Characteristics
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN | TYP | MAX | UNITS | |
|---|---|---|---|---|---|---|---|
| OFF STATE SPECIFICATIONS | |||||||
| Drain to Source Breakdown Voltage | BV DSS | I D = 250 μ A, V GS = 0V (Figure 11) | I D = 250 μ A, V GS = 0V (Figure 11) | 100 | - | - | V |
| Zero Gate Voltage Drain Current | I DSS | V DS = 95V, V GS = 0V | V DS = 95V, V GS = 0V | - | - | 1 | μ A |
| V DS = 90V, V GS = 0V, T C = 150 o C | V DS = 90V, V GS = 0V, T C = 150 o C | - | - | 250 | μ A | ||
| Gate to Source Leakage Current | I GSS | V GS = ± 20V | V GS = ± 20V | - | - | ± 100 | nA |
| ON STATE SPECIFICATIONS | |||||||
| Gate to Source Threshold Voltage | V GS(TH) | V GS = V DS , I D = 250 μ A (Figure 10) | V GS = V DS , I D = 250 μ A (Figure 10) | 2 | - | 4 | V |
| Drain to Source On Resistance | r DS(ON) | I D = 33A, V GS = 10V (Figure 9) | I D = 33A, V GS = 10V (Figure 9) | - | 0.033 | 0.040 | Ω |
| THERMAL SPECIFICATIONS | |||||||
| Thermal Resistance Junction to Case | R θ JC | TO-220 | TO-220 | - | - | 1.25 | o C/W |
| Thermal Resistance Junction to Ambient | R θ JA | - | - | 62 | o C/W | ||
| SWITCHING SPECIFICATIONS (V GS = 10V) | SWITCHING SPECIFICATIONS (V GS = 10V) | ||||||
| Turn-On Time | t ON | V DD = 50V, I D = 33A | V DD = 50V, I D = 33A | - | - | 100 | ns |
| Turn-On Delay Time | t d(ON) | V GS = 10V, R = 9.1 Ω | V GS = 10V, R = 9.1 Ω | - | 9.5 | - | ns |
| Rise Time | t r | GS (Figures 18, 19) | GS (Figures 18, 19) | - | 57 | - | ns |
| Turn-Off Delay Time | t d(OFF) | - | 40 | - | ns | ||
| Fall Time | t f | - | 55 | - | ns | ||
| Turn-Off Time | t OFF | - | - | 145 | ns | ||
| GATE CHARGE SPECIFICATIONS | GATE CHARGE SPECIFICATIONS | ||||||
| Total Gate Charge | Q g(TOT) | V GS = 0V to 20V | V DD = 50V, I D = 33A, I g(REF) = 1.0mA (Figures 13, 16, 17) | - | 66 | 79 | nC |
| Gate Charge at 10V | Q g(10) | V GS = 0V to 10V | V GS = 0V to 10V | - | 35 | 42 | nC |
| Threshold Gate Charge | Q g(TH) | V GS = 0V to 2V | V GS = 0V to 2V | - | 2.4 | 2.9 | nC |
| Gate to Source Gate Charge | Q gs | - | 5.4 | - | nC | ||
| Gate to Drain "Miller" Charge | Q gd | - | 13 | - | nC | ||
| CAPACITANCE SPECIFICATIONS | CAPACITANCE SPECIFICATIONS | ||||||
| Input Capacitance | C ISS | V DS = 25V, V GS = 0V, | V DS = 25V, V GS = 0V, | - | 1220 | - | pF |
| Output Capacitance | C OSS | f = 1MHz | f = 1MHz | - | 295 | - | pF |
| Reverse Transfer Capacitance | C RSS | (Figure 12) | (Figure 12) | - | 100 | - | pF |
Thermal Information
REV 26 July 1999 IRF540NT
CTHERM1 th 6 2.60e-3
CTHERM2 6 5 8.85e-3 CTHERM3 5 4 7.60e-3 CTHERM4 4 3 7.65e-3 CTHERM5 3 2 1.22e-2 CTHERM6 2 tl 8.70e-2 RTHERM1 th 6 9.00e-3 RTHERM2 6 5 1.80e-2 RTHERM3 5 4 9.15e-2 RTHERM4 4 3 2.43e-1 RTHERM5 3 2 3.10e-1 RTHERM6 2 tl 3.21e-1
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRF540NT | Infineon Technologies | — |
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