IRF540NT
Power MOSFETThe IRF540NT is a power mosfet from Infineon Technologies. View the full IRF540NT datasheet below including key specifications, electrical characteristics.
IRF540NT shares its datasheet with IRF540N, whose page lists every part number it covers.
Official IRF540NT datasheet (PDF) — the source this page was extracted from.
Manufacturer
Infineon TechnologiesCategory
MOSFETsIRF540NT Key Specifications
| Parameter | Value |
|---|---|
| Drain to Source Breakdown Voltage (BV DSS) | 100 V (min) at I D = 250 μ A, V GS = 0V |
| Zero Gate Voltage Drain Current (I DSS) | 1 μ A (max) at V DS = 95V, V GS = 0V |
| Gate to Source Threshold Voltage (V GS(TH)) | 2 V (min) to 4 V (max) at V GS = V DS , I D = 250 μ A |
| Drain to Source On Resistance (r DS(ON)) | 0.040 Ω (max) at I D = 33A, V GS = 10V |
| Thermal Resistance Junction to Case (R θ JC) | 1.25 °C/W (max) |
| Total Gate Charge (Q g(TOT)) | 79 nC (max) at V DD = 50V, I D = 33A, V GS = 0V to 20V |
| Input Capacitance (C ISS) | 1220 pF (typ) at V DS = 25V, V GS = 0V, f = 1MHz |
| Source to Drain Diode Voltage (V SD) | 1.25 V (max) at I SD = 33A |
IRF540NT Overview
Part: IRF540N from Fairchild Semiconductor
Type: N-Channel Power MOSFET
Description: 100V, 33A N-Channel Power MOSFET with 0.040 Ω on-resistance.
Operating Conditions:
- Supply voltage: 0–100 V (Drain to Source), ±20 V (Gate to Source)
- Operating temperature: -55 to 175 °C
- Max power dissipation: 120 W
- Gate to Source Threshold Voltage: 2 V (min) to 4 V (max)
Absolute Maximum Ratings:
- Max supply voltage: 100 V (Drain to Source)
- Max continuous current: 33 A (Drain Current at T C = 25 °C, V GS = 10V)
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain to Source Breakdown Voltage (BV DSS): 100 V (min) at I D = 250 μ A, V GS = 0V
- Zero Gate Voltage Drain Current (I DSS): 1 μ A (max) at V DS = 95V, V GS = 0V
- Gate to Source Threshold Voltage (V GS(TH)): 2 V (min) to 4 V (max) at V GS = V DS , I D = 250 μ A
- Drain to Source On Resistance (r DS(ON)): 0.040 Ω (max) at I D = 33A, V GS = 10V
- Thermal Resistance Junction to Case (R θ JC): 1.25 °C/W (max)
- Total Gate Charge (Q g(TOT)): 79 nC (max) at V DD = 50V, I D = 33A, V GS = 0V to 20V
- Input Capacitance (C ISS): 1220 pF (typ) at V DS = 25V, V GS = 0V, f = 1MHz
- Source to Drain Diode Voltage (V SD): 1.25 V (max) at I SD = 33A
Features:
- Ultra Low On-Resistance
- Simulation Models (Temperature Compensated PSPICE™ and SABER© Electrical Models, Spice and SABER© Thermal Impedance Models)
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
Package:
- TO-220AB
IRF540NT Features
- Ultra Low On-Resistance
- -r DS(ON) = 0.040 Ω, V GS = 10V
- Simulation Models
- -Temperature Compensated PSPICE™ and SABER © Electrical Models
- -Spice and SABER © Thermal Impedance Models
- -www.fairchildsemi.com
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
IRF540NT Electrical Characteristics
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN | TYP | MAX | UNITS | |
|---|---|---|---|---|---|---|---|
| OFF STATE SPECIFICATIONS | |||||||
| Drain to Source Breakdown Voltage | BV DSS | I D = 250 μ A, V GS = 0V (Figure 11) | I D = 250 μ A, V GS = 0V (Figure 11) | 100 | - | - | V |
| Zero Gate Voltage Drain Current | I DSS | V DS = 95V, V GS = 0V | V DS = 95V, V GS = 0V | - | - | 1 | μ A |
| V DS = 90V, V GS = 0V, T C = 150 o C | V DS = 90V, V GS = 0V, T C = 150 o C | - | - | 250 | μ A | ||
| Gate to Source Leakage Current | I GSS | V GS = ± 20V | V GS = ± 20V | - | - | ± 100 | nA |
| ON STATE SPECIFICATIONS | |||||||
| Gate to Source Threshold Voltage | V GS(TH) | V GS = V DS , I D = 250 μ A (Figure 10) | V GS = V DS , I D = 250 μ A (Figure 10) | 2 | - | 4 | V |
| Drain to Source On Resistance | r DS(ON) | I D = 33A, V GS = 10V (Figure 9) | I D = 33A, V GS = 10V (Figure 9) | - | 0.033 | 0.040 | Ω |
| THERMAL SPECIFICATIONS | |||||||
| Thermal Resistance Junction to Case | R θ JC | TO-220 | TO-220 | - | - | 1.25 | o C/W |
| Thermal Resistance Junction to Ambient | R θ JA | - | - | 62 | o C/W | ||
| SWITCHING SPECIFICATIONS (V GS = 10V) | SWITCHING SPECIFICATIONS (V GS = 10V) | ||||||
| Turn-On Time | t ON | V DD = 50V, I D = 33A | V DD = 50V, I D = 33A | - | - | 100 | ns |
| Turn-On Delay Time | t d(ON) | V GS = 10V, R = 9.1 Ω | V GS = 10V, R = 9.1 Ω | - | 9.5 | - | ns |
| Rise Time | t r | GS (Figures 18, 19) | GS (Figures 18, 19) | - | 57 | - | ns |
| Turn-Off Delay Time | t d(OFF) | - | 40 | - | ns | ||
| Fall Time | t f | - | 55 | - | ns | ||
| Turn-Off Time | t OFF | - | - | 145 | ns | ||
| GATE CHARGE SPECIFICATIONS | GATE CHARGE SPECIFICATIONS | ||||||
| Total Gate Charge | Q g(TOT) | V GS = 0V to 20V | V DD = 50V, I D = 33A, I g(REF) = 1.0mA (Figures 13, 16, 17) | - | 66 | 79 | nC |
| Gate Charge at 10V | Q g(10) | V GS = 0V to 10V | V GS = 0V to 10V | - | 35 | 42 | nC |
| Threshold Gate Charge | Q g(TH) | V GS = 0V to 2V | V GS = 0V to 2V | - | 2.4 | 2.9 | nC |
| Gate to Source Gate Charge | Q gs | - | 5.4 | - | nC | ||
| Gate to Drain "Miller" Charge | Q gd | - | 13 | - | nC | ||
| CAPACITANCE SPECIFICATIONS | CAPACITANCE SPECIFICATIONS | ||||||
| Input Capacitance | C ISS | V DS = 25V, V GS = 0V, | V DS = 25V, V GS = 0V, | - | 1220 | - | pF |
| Output Capacitance | C OSS | f = 1MHz | f = 1MHz | - | 295 | - | pF |
| Reverse Transfer Capacitance | C RSS | (Figure 12) | (Figure 12) | - | 100 | - | pF |
IRF540NT Thermal Information
REV 26 July 1999 IRF540NT
CTHERM1 th 6 2.60e-3
CTHERM2 6 5 8.85e-3 CTHERM3 5 4 7.60e-3 CTHERM4 4 3 7.65e-3 CTHERM5 3 2 1.22e-2 CTHERM6 2 tl 8.70e-2 RTHERM1 th 6 9.00e-3 RTHERM2 6 5 1.80e-2 RTHERM3 5 4 9.15e-2 RTHERM4 4 3 2.43e-1 RTHERM5 3 2 3.10e-1 RTHERM6 2 tl 3.21e-1
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All MOSFETs datasheetsAll Infineon Technologies datasheets (140)
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