IRF540NT

Power MOSFET

The IRF540NT is a power mosfet from Infineon Technologies. View the full IRF540NT datasheet below including electrical characteristics.

Manufacturer

Infineon Technologies

Overview

Part: IRF540N from Fairchild Semiconductor

Type: N-Channel Power MOSFET

Description: 100V, 33A N-Channel Power MOSFET with 0.040 Ω on-resistance.

Operating Conditions:

Supply voltage: 0–100 V (Drain to Source), ±20 V (Gate to Source)
Operating temperature: -55 to 175 °C
Max power dissipation: 120 W
Gate to Source Threshold Voltage: 2 V (min) to 4 V (max)

Absolute Maximum Ratings:

Max supply voltage: 100 V (Drain to Source)
Max continuous current: 33 A (Drain Current at T C = 25 °C, V GS = 10V)
Max junction/storage temperature: 175 °C

Key Specs:

Drain to Source Breakdown Voltage (BV DSS): 100 V (min) at I D = 250 μ A, V GS = 0V
Zero Gate Voltage Drain Current (I DSS): 1 μ A (max) at V DS = 95V, V GS = 0V
Gate to Source Threshold Voltage (V GS(TH)): 2 V (min) to 4 V (max) at V GS = V DS , I D = 250 μ A
Drain to Source On Resistance (r DS(ON)): 0.040 Ω (max) at I D = 33A, V GS = 10V
Thermal Resistance Junction to Case (R θ JC): 1.25 °C/W (max)
Total Gate Charge (Q g(TOT)): 79 nC (max) at V DD = 50V, I D = 33A, V GS = 0V to 20V
Input Capacitance (C ISS): 1220 pF (typ) at V DS = 25V, V GS = 0V, f = 1MHz
Source to Drain Diode Voltage (V SD): 1.25 V (max) at I SD = 33A

Features:

Ultra Low On-Resistance
Simulation Models (Temperature Compensated PSPICE™ and SABER© Electrical Models, Spice and SABER© Thermal Impedance Models)
Peak Current vs Pulse Width Curve
UIS Rating Curve

Package:

TO-220AB

Features

Ultra Low On-Resistance
-r DS(ON) = 0.040 Ω, V GS = 10V
Simulation Models
-Temperature Compensated PSPICE™ and SABER © Electrical Models
-Spice and SABER © Thermal Impedance Models
-www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve

Electrical Characteristics

PARAMETER	SYMBOL	TEST CONDITIONS		MIN	TYP	MAX	UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage	BV DSS	I D = 250 μ A, V GS = 0V (Figure 11)	I D = 250 μ A, V GS = 0V (Figure 11)	100	-	-	V
Zero Gate Voltage Drain Current	I DSS	V DS = 95V, V GS = 0V	V DS = 95V, V GS = 0V	-	-	1	μ A
		V DS = 90V, V GS = 0V, T C = 150 o C	V DS = 90V, V GS = 0V, T C = 150 o C	-	-	250	μ A
Gate to Source Leakage Current	I GSS	V GS = ± 20V	V GS = ± 20V	-	-	± 100	nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage	V GS(TH)	V GS = V DS , I D = 250 μ A (Figure 10)	V GS = V DS , I D = 250 μ A (Figure 10)	2	-	4	V
Drain to Source On Resistance	r DS(ON)	I D = 33A, V GS = 10V (Figure 9)	I D = 33A, V GS = 10V (Figure 9)	-	0.033	0.040	Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case	R θ JC	TO-220	TO-220	-	-	1.25	o C/W
Thermal Resistance Junction to Ambient	R θ JA			-	-	62	o C/W
SWITCHING SPECIFICATIONS (V GS = 10V)	SWITCHING SPECIFICATIONS (V GS = 10V)
Turn-On Time	t ON	V DD = 50V, I D = 33A	V DD = 50V, I D = 33A	-	-	100	ns
Turn-On Delay Time	t d(ON)	V GS = 10V, R = 9.1 Ω	V GS = 10V, R = 9.1 Ω	-	9.5	-	ns
Rise Time	t r	GS (Figures 18, 19)	GS (Figures 18, 19)	-	57	-	ns
Turn-Off Delay Time	t d(OFF)			-	40	-	ns
Fall Time	t f			-	55	-	ns
Turn-Off Time	t OFF			-	-	145	ns
GATE CHARGE SPECIFICATIONS	GATE CHARGE SPECIFICATIONS
Total Gate Charge	Q g(TOT)	V GS = 0V to 20V	V DD = 50V, I D = 33A, I g(REF) = 1.0mA (Figures 13, 16, 17)	-	66	79	nC
Gate Charge at 10V	Q g(10)	V GS = 0V to 10V	V GS = 0V to 10V	-	35	42	nC
Threshold Gate Charge	Q g(TH)	V GS = 0V to 2V	V GS = 0V to 2V	-	2.4	2.9	nC
Gate to Source Gate Charge	Q gs			-	5.4	-	nC
Gate to Drain "Miller" Charge	Q gd			-	13	-	nC
CAPACITANCE SPECIFICATIONS	CAPACITANCE SPECIFICATIONS
Input Capacitance	C ISS	V DS = 25V, V GS = 0V,	V DS = 25V, V GS = 0V,	-	1220	-	pF
Output Capacitance	C OSS	f = 1MHz	f = 1MHz	-	295	-	pF
Reverse Transfer Capacitance	C RSS	(Figure 12)	(Figure 12)	-	100	-	pF

Thermal Information

REV 26 July 1999 IRF540NT

CTHERM1 th 6 2.60e-3

CTHERM2 6 5 8.85e-3 CTHERM3 5 4 7.60e-3 CTHERM4 4 3 7.65e-3 CTHERM5 3 2 1.22e-2 CTHERM6 2 tl 8.70e-2 RTHERM1 th 6 9.00e-3 RTHERM2 6 5 1.80e-2 RTHERM3 5 4 9.15e-2 RTHERM4 4 3 2.43e-1 RTHERM5 3 2 3.10e-1 RTHERM6 2 tl 3.21e-1

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
IRF540N	Infineon Technologies	—

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