AO3400
N-Channel MOSFETThe AO3400 is a n-channel mosfet from Alpha & Omega Semiconductor Inc.. View the full AO3400 datasheet below including key specifications, electrical characteristics.
Official AO3400 datasheet (PDF) — the source this page was extracted from.
Manufacturer
Alpha & Omega Semiconductor Inc.Category
MOSFETsPackage
3-SMD, SOT-23-3 Variant
Lifecycle
Obsolete
AO3400 Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 5.8A (Ta) |
| Drain-Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 7 nC @ 4.5 V |
| Input Capacitance (Ciss) | 630 pF @ 15 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 3-SMD, SOT-23-3 Variant |
| Power Dissipation (Max) | 1.4W (Ta) |
| Rds(on) | 28mOhm @ 5.8A, 10V Ω |
| Supplier Device Package | SOT-23-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Gate Threshold Voltage | 1.45V @ 250µA |
AO3400 Overview
Part: AO3400 from AOS (Alpha & Omega Semiconductor)
Type: N-Channel MOSFET
Description: 30V N-Channel MOSFET with a continuous drain current of 5.8A at 25°C and a low on-resistance of less than 28mΩ at VGS=10V.
Operating Conditions:
- Gate-Source Voltage: ±12 V
- Operating temperature: -55 to 150 °C (Junction and Storage)
- Continuous Drain Current: 5.8 A (at T A=25°C)
Absolute Maximum Ratings:
- Max Drain-Source Voltage: 30 V
- Max Gate-Source Voltage: ±12 V
- Max continuous Drain Current: 5.8 A (T A=25°C)
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV DSS): 30 V (min, at I D=250 μ A, V GS=0V)
- Static Drain-Source On-Resistance (R DS(ON)): 18 mΩ (typ) / 28 mΩ (max) at V GS=10V, I D=5.8A
- Static Drain-Source On-Resistance (R DS(ON)): 19 mΩ (typ) / 33 mΩ (max) at V GS=4.5V, I D=5A
- Gate Threshold Voltage (V GS(th)): 0.65 V (min) / 1.05 V (typ) / 1.45 V (max) at V DS=V GS, I D=250 μ A
- Zero Gate Voltage Drain Current (I DSS): 1 μ A (max) at V DS=30V, V GS=0V
- Total Gate Charge (Q g): 6 nC (typ) / 7 nC (max) at V GS=4.5V, V DS=15V, I D=5.8A
- Input Capacitance (C iss): 630 pF (typ) at V GS=0V, V DS=15V, f=1MHz
- Turn-On Delay Time (t D(on)): 3 ns (typ) at V GS=10V, V DS=15V, R L=2.6Ω, R GEN=3Ω
Features:
- Advanced trench MOSFET technology
- Low resistance package
- Extremely low RDS(ON)
Applications:
- Load switch
- PWM applications
Package:
- SOT23
AO3400 Electrical Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| STATIC PARAMETERS | STATIC PARAMETERS | STATIC PARAMETERS | STATIC PARAMETERS | STATIC PARAMETERS | STATIC PARAMETERS | STATIC PARAMETERS |
| BV DSS | Drain-Source Breakdown Voltage | I D =250 μ A, V GS =0V | V | |||
| I DSS | Zero Gate Voltage Drain Current | V DS =30V, V GS =0V | 1 | μ A | ||
| I DSS | Zero Gate Voltage Drain Current | T J | =55°C | 5 | ||
| I GSS | Gate-Body leakage current | V DS =0V, V GS = ±12V | 100 | nA | ||
| V GS(th) | Gate Threshold Voltage | V DS =V GS I D =250 μ A | 0.65 | 1.05 | 1.45 | V |
| I D(ON) | On state drain current | V GS =4.5V, V DS =5V | A | |||
| R DS(ON) | Static Drain-Source On-Resistance | V GS =10V, I D =5.8A | 18 | 28 | m Ω | |
| R DS(ON) | Static Drain-Source On-Resistance | V GS =10V, I D =5.8A | =125°C | 28 | 39 | m Ω |
| R DS(ON) | Static Drain-Source On-Resistance | V GS =4.5V, I D =5A | 19 | 33 | m Ω | |
| R DS(ON) | Static Drain-Source On-Resistance | V GS =2.5V, I D =4A | 24 | 52 | m Ω | |
| g FS | Forward Transconductance | V DS =5V, I D =5.8A | 33 | S | ||
| V SD | Diode Forward Voltage | I S =1A,V GS =0V | 0.7 | 1 | V | |
| I S | Maximum Body-Diode Continuous Current | Maximum Body-Diode Continuous Current | 2 | A | ||
| DYNAMIC PARAMETERS | DYNAMIC PARAMETERS | DYNAMIC PARAMETERS | DYNAMIC PARAMETERS | DYNAMIC PARAMETERS | DYNAMIC PARAMETERS | DYNAMIC PARAMETERS |
| C iss | Input Capacitance | V GS =0V, V DS =15V, f=1MHz | 630 | pF | ||
| C oss | Output Capacitance | V GS =0V, V DS =15V, f=1MHz | 75 | pF | ||
| C rss | Reverse Transfer Capacitance | V GS =0V, V DS =15V, f=1MHz | 50 | pF | ||
| R g | Gate resistance | V GS =0V, V DS =0V, f=1MHz | 3 | 4.5 | Ω | |
| SWITCHING PARAMETERS | SWITCHING PARAMETERS | SWITCHING PARAMETERS | SWITCHING PARAMETERS | SWITCHING PARAMETERS | SWITCHING PARAMETERS | SWITCHING PARAMETERS |
| Q g | Total Gate Charge | V GS =4.5V, V DS =15V, I D =5.8A | 6 | 7 | nC | |
| Q gs | Gate Source Charge | V GS =4.5V, V DS =15V, I D =5.8A | 1.3 | nC | ||
| Q gd | Gate Drain Charge | V GS =4.5V, V DS =15V, I D =5.8A | 1.8 | nC | ||
| t D(on) | Turn-On DelayTime | V =10V, V =15V, R =2.6 V GS =10V, V DS =15V, R L =2.6 R GEN =3 Ω | 3 | ns | ||
| t t r | Turn-On Rise Time Turn-On Rise Time | V =10V, V =15V, R =2.6 V GS =10V, V DS =15V, R L =2.6 R GEN =3 Ω | Ω , Ω , | 2.5 2.5 | ns ns | |
| t D(off) | Turn-Off DelayTime | V =10V, V =15V, R =2.6 V GS =10V, V DS =15V, R L =2.6 R GEN =3 Ω | 25 | ns | ||
| t f | Turn-Off Fall Time | V =10V, V =15V, R =2.6 V GS =10V, V DS =15V, R L =2.6 R GEN =3 Ω | 4 | ns | ||
| t rr | Body Diode Reverse Recovery Time | I F =5.8A, dI/dt=100A/ μ s | 8.5 | ns | ||
| Q rr | Body Diode Reverse Recovery Charge I F | =5.8A, dI/dt=100A/ μ s | 2.6 | nC |
- B. The power dissipation P D is based on T J(MAX)=150 ° C, using ≤ 10s junction-to-ambient thermal resistance.
- C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150 ° C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 ° C.
- D. The R θ JA is the sum of the thermal impedence from junction to lead R θ JL and lead to ambient.
- E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
- F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150 ° C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO3400 Thermal Information
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All MOSFETs datasheetsAll Alpha & Omega Semiconductor datasheets (5)
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