AO3400

Part: AO3400 from AOS (Alpha & Omega Semiconductor)

Type: N-Channel MOSFET

Description: 30V N-Channel MOSFET with a continuous drain current of 5.8A at 25°C and a low on-resistance of less than 28mΩ at VGS=10V.

Operating Conditions:

• Gate-Source Voltage: ±12 V
• Operating temperature: -55 to 150 °C (Junction and Storage)
• Continuous Drain Current: 5.8 A (at T A=25°C)

Absolute Maximum Ratings:

• Max Drain-Source Voltage: 30 V
• Max Gate-Source Voltage: ±12 V
• Max continuous Drain Current: 5.8 A (T A=25°C)
• Max junction/storage temperature: 150 °C

Key Specs:

• Drain-Source Breakdown Voltage (BV DSS): 30 V (min, at I D=250 μ A, V GS=0V)
• Static Drain-Source On-Resistance (R DS(ON)): 18 mΩ (typ) / 28 mΩ (max) at V GS=10V, I D=5.8A
• Static Drain-Source On-Resistance (R DS(ON)): 19 mΩ (typ) / 33 mΩ (max) at V GS=4.5V, I D=5A
• Gate Threshold Voltage (V GS(th)): 0.65 V (min) / 1.05 V (typ) / 1.45 V (max) at V DS=V GS, I D=250 μ A
• Zero Gate Voltage Drain Current (I DSS): 1 μ A (max) at V DS=30V, V GS=0V
• Total Gate Charge (Q g): 6 nC (typ) / 7 nC (max) at V GS=4.5V, V DS=15V, I D=5.8A
• Input Capacitance (C iss): 630 pF (typ) at V GS=0V, V DS=15V, f=1MHz
• Turn-On Delay Time (t D(on)): 3 ns (typ) at V GS=10V, V DS=15V, R L=2.6Ω, R GEN=3Ω

Features:

• Advanced trench MOSFET technology
• Low resistance package
• Extremely low RDS(ON)

Applications:

• Load switch
• PWM applications

Package:

• SOT23

Symbol	Parameter	Conditions	Min	Typ	Max	Units
STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS	STATIC PARAMETERS
BV DSS	Drain-Source Breakdown Voltage	I D =250 μ A, V GS =0V				V
I DSS	Zero Gate Voltage Drain Current	V DS =30V, V GS =0V			1	μ A
I DSS	Zero Gate Voltage Drain Current	T J	=55°C		5
I GSS	Gate-Body leakage current	V DS =0V, V GS = ±12V			100	nA
V GS(th)	Gate Threshold Voltage	V DS =V GS I D =250 μ A	0.65	1.05	1.45	V
I D(ON)	On state drain current	V GS =4.5V, V DS =5V				A
R DS(ON)	Static Drain-Source On-Resistance	V GS =10V, I D =5.8A		18	28	m Ω
R DS(ON)	Static Drain-Source On-Resistance	V GS =10V, I D =5.8A	=125°C	28	39	m Ω
R DS(ON)	Static Drain-Source On-Resistance	V GS =4.5V, I D =5A		19	33	m Ω
R DS(ON)	Static Drain-Source On-Resistance	V GS =2.5V, I D =4A		24	52	m Ω
g FS	Forward Transconductance	V DS =5V, I D =5.8A		33		S
V SD	Diode Forward Voltage	I S =1A,V GS =0V		0.7	1	V
I S	Maximum Body-Diode Continuous Current	Maximum Body-Diode Continuous Current			2	A
DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS	DYNAMIC PARAMETERS
C iss	Input Capacitance	V GS =0V, V DS =15V, f=1MHz		630		pF
C oss	Output Capacitance	V GS =0V, V DS =15V, f=1MHz		75		pF
C rss	Reverse Transfer Capacitance	V GS =0V, V DS =15V, f=1MHz		50		pF
R g	Gate resistance	V GS =0V, V DS =0V, f=1MHz		3	4.5	Ω
SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS	SWITCHING PARAMETERS
Q g	Total Gate Charge	V GS =4.5V, V DS =15V, I D =5.8A		6	7	nC
Q gs	Gate Source Charge	V GS =4.5V, V DS =15V, I D =5.8A		1.3		nC
Q gd	Gate Drain Charge	V GS =4.5V, V DS =15V, I D =5.8A		1.8		nC
t D(on)	Turn-On DelayTime	V =10V, V =15V, R =2.6 V GS =10V, V DS =15V, R L =2.6 R GEN =3 Ω		3		ns
t t r	Turn-On Rise Time Turn-On Rise Time	V =10V, V =15V, R =2.6 V GS =10V, V DS =15V, R L =2.6 R GEN =3 Ω	Ω , Ω ,	2.5 2.5		ns ns
t D(off)	Turn-Off DelayTime	V =10V, V =15V, R =2.6 V GS =10V, V DS =15V, R L =2.6 R GEN =3 Ω		25		ns
t f	Turn-Off Fall Time	V =10V, V =15V, R =2.6 V GS =10V, V DS =15V, R L =2.6 R GEN =3 Ω		4		ns
t rr	Body Diode Reverse Recovery Time	I F =5.8A, dI/dt=100A/ μ s		8.5		ns
Q rr	Body Diode Reverse Recovery Charge I F	=5.8A, dI/dt=100A/ μ s		2.6		nC

• B. The power dissipation P D is based on T J(MAX)=150 ° C, using ≤ 10s junction-to-ambient thermal resistance.
• C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150 ° C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 ° C.
• D. The R θ JA is the sum of the thermal impedence from junction to lead R θ JL and lead to ambient.
• E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
• F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150 ° C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.