AO3400

Part: AO3400 Type: N-Channel MOSFET

Key Specs:

• Drain-Source Voltage ($V_{DS}$): 30V
• Continuous Drain Current ($I_D$ at $V_{GS}$ = 10V, $T_A$=25℃): 5.8A
• On-Resistance ($R_{DS(ON)}$ at $V_{GS}$ = 10V): < 28mΩ
• Gate-Source Voltage ($V_{GS}$): ±12V
• Power Dissipation ($P_D$ at $T_A$=25℃): 1.4W

Features:

• Advanced trench MOSFET technology
• Low resistance package
• Extremely low $R_{DS(ON)}$

Applications:

• Load switch
• PWM applications

Package:

• null

| Symbol | Parameter | Conditions | | Min | Typ | Max | Units | |---------------------|---------------------------------------|-------------------------------------------------------------------------------|----------------------|------|------|------|-------|--|--|--| | STATIC PARAMETERS | | BV _DSS | Drain-Source Breakdown Voltage | I _D =250μA, V _GS =0V | | 30 | | | V | | I _DSS | Zero Gate Voltage Drain Current | $V_{DS}$ =30V, $V_{GS}$ =0V | | | | 1 | μA | | | | | T _J =55℃ | | | 5 | μΑ | | I _GSS | Gate-Body leakage current | V _DS =0V, V _GS = ±12V | | | | 100 | nA | | $V_{GS(th)}$ | Gate Threshold Voltage | $V_{DS}=V_{GS} I_{D}=250\mu A$ | | 0.65 | 1.05 | 1.45 | V | | $I_{D(ON)}$ | On state drain current | $V_{GS}$ =4.5V, $V_{DS}$ =5V | | 30 | | | Α | | R _DS(ON) | Static Drain-Source On-Resistance | $V_{GS}$ =10V, $I_D$ =5.8A | | | 18 | 28 | mΩ | | | | | T _J =125℃ | | 28 | 39 | 11152 | | | Static Dialif-Source Off-Nesistance | V _GS =4.5V, I _D =5A | | | 19 | 33 | mΩ | | | | $V_{GS}$ =2.5V, $I_D$ =4A | | 24 | 52 | mΩ | | g _FS | Forward Transconductance | $V_{DS}$ =5V, $I_{D}$ =5.8A | | | 33 | | S | | $V_{SD}$ | Diode Forward Voltage | I _S =1A,V _GS =0V | | | 0.7 | 1 | V | | I _S | Maximum Body-Diode Continuous Current | | | | | 2 | Α | | DYNAMIC | PARAMETERS | | C _iss | Input Capacitance | V _GS =0V, V _DS =15V, f=1MHz | | | 630 | | pF | | C _oss | Output Capacitance | | | | 75 | | pF | | $C_{rss}$ | Reverse Transfer Capacitance | | | | 50 | | pF | | $R_g$ | Gate resistance | V _GS =0V, V _DS =0V, f=1MHz | | 1.5 | 3 | 4.5 | Ω | | SWITCHI | NG PARAMETERS | | $Q_g$ | Total Gate Charge | V _GS =4.5V, V _DS =15V, I _D =5.8A | | | 6 | 7 | nC | | $Q_{gs}$ | Gate Source Charge | | | | 1.3 | | nC | | $Q_{gd}$ | Gate Drain Charge | | | | 1.8 | | nC | | t _D(on) | Turn-On DelayTime | Time $V_{GS}$ =10V, $V_{DS}$ =15V, $R_L$ =2.6 $\Omega$ , $V_{GS}$ =3 $\Omega$ | | | 3 | | ns | | t _r | Turn-On Rise Time | | | | 2.5 | | ns | | t _D(off) | Turn-Off DelayTime | | | | 25 | | ns | | t _f | Turn-Off Fall Time | | | | 4 | | ns | | t _rr | Body Diode Reverse Recovery Time | I _F =5.8A, dI/dt=100A/μs | | | 8.5 | | ns | | $Q_{rr}$ | Body Diode Reverse Recovery Charge | e I _F =5.8A, dl/dt=100A/μs | | | 2.6 | | nC | A. The value of R_BJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25° C. The value in any given application depends on the user's specific board design.

B. The power dissipation $P_D$ is based on $T_{J(MAX)}=150^\circ$ C, using $\leqslant$ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature $T_{J(MAX)}=150^\circ$ C. Ratings are based on low frequency and duty cycles to keep

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 8: Dec 2011 Page 2 of 5 www.aosmd.com

D. The $R_{\theta JA}$ is the sum of the thermal impedence from junction to lead $R_{\theta JL}$ and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T_J(MAX)=150° C. The SOA curve provides a single pulse rating.