20N06L
Power MOSFETThe 20N06L is a power mosfet from onsemi. View the full 20N06L datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
20N06L shares its datasheet with 20N06D, whose page lists every part number it covers.
Official 20N06L datasheet (PDF) — the source this page was extracted from.
20N06L Key Specifications
| Parameter | Value |
|---|---|
| Drain-to-Source Breakdown Voltage (V_BR)DSS | 60 V (min) @ V_GS = 0 Vdc, I_D = 250 mAdc |
| Gate Threshold Voltage (V_GS(th)) | 1.0 V (min), 1.6 V (typ), 2.0 V (max) @ V_DS = V_GS, I_D = 250 mAdc |
| Static Drain-to-Source On-Resistance (R_DS(on)) | 39 mΩ (typ), 48 mΩ (max) @ V_GS = 5.0 Vdc, I_D = 10 Adc |
| Zero Gate Voltage Drain Current (I_DSS) | 1.0 mA (max) @ V_DS = 60 Vdc, V_GS = 0 Vdc |
| Input Capacitance (C_iss) | 707 pF (typ), 990 pF (max) @ V_DS = 25 Vdc, V_GS = 0 Vdc, f = 1.0 MHz |
| Total Gate Charge (Q_T) | 16.6 nC (typ), 32 nC (max) @ V_DS = 48 Vdc, I_D = 20 Adc, V_GS = 5.0 Vdc |
| Turn-On Delay Time (t_d(on)) | 9.6 ns (typ), 20 ns (max) @ V_DD = 30 Vdc, I_D = 20 Adc, V_GS = 5.0 Vdc, R_G = 9.1 Ω |
| Reverse Recovery Time (t_rr) | 42 ns (typ) @ I_S = 20 Adc, V_GS = 0 Vdc, dI_S/dt = 100 A/μs |
20N06L Overview
Part: NTD20N06L — ON Semiconductor
Type: N-Channel Logic Level Power MOSFET
Description: 60 V, 20 A N-Channel logic level power MOSFET with 39 mΩ typical R_DS(on) designed for low voltage, high speed switching applications.
Operating Conditions:
- Drain-to-Source Voltage: up to 60 V
- Gate-to-Source Voltage: ±15 V continuous
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max Drain-to-Source Voltage: 60 Vdc
- Max continuous Drain Current: 20 Adc (@ T_A = 25 °C)
- Max Junction/Storage Temperature: 150 °C
Key Specs:
- Drain-to-Source Breakdown Voltage (V_BR)DSS: 60 V (min) @ V_GS = 0 Vdc, I_D = 250 mAdc
- Gate Threshold Voltage (V_GS(th)): 1.0 V (min), 1.6 V (typ), 2.0 V (max) @ V_DS = V_GS, I_D = 250 mAdc
- Static Drain-to-Source On-Resistance (R_DS(on)): 39 mΩ (typ), 48 mΩ (max) @ V_GS = 5.0 Vdc, I_D = 10 Adc
- Zero Gate Voltage Drain Current (I_DSS): 1.0 mA (max) @ V_DS = 60 Vdc, V_GS = 0 Vdc
- Input Capacitance (C_iss): 707 pF (typ), 990 pF (max) @ V_DS = 25 Vdc, V_GS = 0 Vdc, f = 1.0 MHz
- Total Gate Charge (Q_T): 16.6 nC (typ), 32 nC (max) @ V_DS = 48 Vdc, I_D = 20 Adc, V_GS = 5.0 Vdc
- Turn-On Delay Time (t_d(on)): 9.6 ns (typ), 20 ns (max) @ V_DD = 30 Vdc, I_D = 20 Adc, V_GS = 5.0 Vdc, R_G = 9.1 Ω
- Reverse Recovery Time (t_rr): 42 ns (typ) @ I_S = 20 Adc, V_GS = 0 Vdc, dI_S/dt = 100 A/μs
Features:
- Logic Level Gate Drive
- Low R_DS(on)
- High-speed switching
- Designed for low voltage applications
Applications:
- Converters
- Power Supplies
- Power Motor Controls
- Bridge Circuits
Package:
- DPAK (CASE 369C Style 2)
- DPAK Straight Lead
20N06L Applications
- Converters
- Power Supplies
- Power Motor Controls
- Bridge Circuits
20N06L Electrical Characteristics
| Characteristic | Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | OFF CHARACTERISTICS | |||||
| Drain-to-Source Breakdown Voltage (Note 3.) (V GS = 0 Vdc, I D = 250 m Adc) Temperature Coefficient (Positive) | Drain-to-Source Breakdown Voltage (Note 3.) (V GS = 0 Vdc, I D = 250 m Adc) Temperature Coefficient (Positive) | V (BR)DSS | 60 - | 71.3 71.2 | - - | Vdc mV/ ° C |
| Zero Gate Voltage Drain Current (V DS = 60 Vdc, V GS = 0 Vdc) (V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C) | Zero Gate Voltage Drain Current (V DS = 60 Vdc, V GS = 0 Vdc) (V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C) | I DSS | - - | - - | 1.0 10 | m Adc |
| Gate-Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc) | Gate-Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc) | I GSS | - | - | ± 100 | nAdc |
| ON CHARACTERISTICS (Note 3.) | ON CHARACTERISTICS (Note 3.) | |||||
| Gate Threshold Voltage (Note 3.) (V DS = V GS , I D = 250 m Adc) Threshold Temperature Coefficient (Negative) | Gate Threshold Voltage (Note 3.) (V DS = V GS , I D = 250 m Adc) Threshold Temperature Coefficient (Negative) | V GS(th) | 1.0 - | 1.6 4.6 | 2.0 - | Vdc mV/ ° C |
| Static Drain-to-Source On-Resistance (Note 3.) (V GS = 5.0 Vdc, I D = 10 Adc) | Static Drain-to-Source On-Resistance (Note 3.) (V GS = 5.0 Vdc, I D = 10 Adc) | R DS(on) | - | 39 | 48 | m W |
| Static Drain-to-Source On-Resistance (Note 3.) (V GS = 5.0 Vdc, I D = 20 Adc) (V GS = 5.0 Vdc, I D = 10 Adc, T J = 150 ° C) | Static Drain-to-Source On-Resistance (Note 3.) (V GS = 5.0 Vdc, I D = 20 Adc) (V GS = 5.0 Vdc, I D = 10 Adc, T J = 150 ° C) | V DS(on) | - - | 0.81 0.72 | 1.66 - | Vdc |
| Forward Transconductance (Note 3.) (V DS = 4.0 Vdc, I D = 10 Adc) | Forward Transconductance (Note 3.) (V DS = 4.0 Vdc, I D = 10 Adc) | g FS | - | 17.5 | - | mhos |
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | |||||
| Input Capacitance | (V 25 Vd V 0 Vd (V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz) f = 1.0 MHz) | C iss | - | 707 | 990 | pF |
| Output Capacitance | (V 25 Vd V 0 Vd (V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz) f = 1.0 MHz) | C oss | - | 224 | 320 | pF |
| Transfer Capacitance | Transfer Capacitance | C rss | - | 72 | 105 | pF |
| SWITCHING CHARACTERISTICS (Note 4.) | SWITCHING CHARACTERISTICS (Note 4.) | |||||
| Turn-On Delay Time | (V DD = 30 Vdc, I D = 20 Adc, V GS = 5 0 Vdc V GS = 5.0 Vdc, R G = 9.1 W ) (Note 3.) R G 9.1 W ) (Note 3.) | t d(on) | - | 9.6 | 20 | ns |
| Rise Time | (V DD = 30 Vdc, I D = 20 Adc, V GS = 5 0 Vdc V GS = 5.0 Vdc, R G = 9.1 W ) (Note 3.) R G 9.1 W ) (Note 3.) | t r | - | 98 | 200 | ns |
| Turn-Off Delay Time | (V DD = 30 Vdc, I D = 20 Adc, V GS = 5 0 Vdc V GS = 5.0 Vdc, R G = 9.1 W ) (Note 3.) R G 9.1 W ) (Note 3.) | t d(off) | - | 25 | 50 | ns |
| Fall Time | (V DD = 30 Vdc, I D = 20 Adc, V GS = 5 0 Vdc V GS = 5.0 Vdc, R G = 9.1 W ) (Note 3.) R G 9.1 W ) (Note 3.) | t f | - | 62 | 120 | ns |
| Gate Charge | (V 48 Vd I 20 Ad (V DS = 48 Vdc, I D = 20 Adc, V GS = 5.0 Vdc) (Note 3.) V GS = 5.0 Vdc) (Note 3.) | Q T | - | 16.6 | 32 | nC |
| (V 48 Vd I 20 Ad (V DS = 48 Vdc, I D = 20 Adc, V GS = 5.0 Vdc) (Note 3.) V GS = 5.0 Vdc) (Note 3.) | Q 1 | - | 5.5 | - | nC | |
| (V 48 Vd I 20 Ad (V DS = 48 Vdc, I D = 20 Adc, V GS = 5.0 Vdc) (Note 3.) V GS = 5.0 Vdc) (Note 3.) | Q 2 | - | 8.5 | - | nC | |
| SOURCE-DRAIN DIODE CHARACTERISTICS | SOURCE-DRAIN DIODE CHARACTERISTICS | |||||
| Forward On-Voltage | (I S = 20 Adc, V GS = 0 Vdc) (Note 3.) (I S = 20 Adc, V GS = 0 Vdc, T J = 150 ° C) | V SD | - - | 0.97 0.85 | 1.2 - | Vdc |
| Reverse Recovery Time | (I 20 Ad V 0 Vd (I S = 20 Adc, V GS = 0 Vdc, dI S /dt = 100 A/ m s) (Note 3.) dI S /dt = 100 A/ m s) (Note 3.) | t rr | - | 42 | - | ns |
| Reverse Recovery Time | (I 20 Ad V 0 Vd (I S = 20 Adc, V GS = 0 Vdc, dI S /dt = 100 A/ m s) (Note 3.) dI S /dt = 100 A/ m s) (Note 3.) | t a | - | 30 | - | ns |
| Reverse Recovery Time | (I 20 Ad V 0 Vd (I S = 20 Adc, V GS = 0 Vdc, dI S /dt = 100 A/ m s) (Note 3.) dI S /dt = 100 A/ m s) (Note 3.) | t b | - | 12 | - | ns |
| Reverse Recovery Stored Charge | Reverse Recovery Stored Charge | Q RR | - | 0.066 | - | m C |
-
Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
-
Switching characteristics are independent of operating junction temperatures.
20N06L Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | V DSS | 60 | Vdc |
| Drain-to-Gate Voltage (R GS = 10M W ) | V DGR | 60 | Vdc |
| Gate-to-Source Voltage | Vdc | ||
| - Continuous | V GS | 15 | |
| - Non-repetitive (t p 10 ms) | V GS | 20 | |
| Drain Current | |||
| Continuous@T A = 25 ° C | I D | 20 | Adc |
| - - Continuous@T A = 100 ° C | I D | 10 | |
| - Single Pulse (t p 10 m s) | I DM | 60 | Apk |
| Total Power Dissipation@T A = 25 ° C | P D | 60 | W |
| Derate above 25 ° C | 0.40 1.88 | W/ ° C W | |
| Total Power Dissipation@T A = 25 ° C (Note 1.) Total Power Dissipation@T = 25 C (Note 2.) | 1.36 | W | |
| A ° | |||
| Operating and Storage Temperature Range | T J , T stg | -55 to | ° C |
| Single Pulse Drain-to-Source Avalanche | E AS | 128 | mJ |
| Energy - Starting T J = 25 ° C (V DD = 25 Vdc, V GS = 5.0 Vdc, = 60 | |||
| L = 1.0 mH, I L (pk) = 16 A, V DS Vdc) | ° C/W | ||
| Thermal Resistance - Junction-to-Case | R q JC | 2.5 | |
| - Junction-to-Ambient (Note 1.) | R q JA | 80 | |
| - Junction-to-Ambient (Note 2.) | R q JA | 110 | |
| Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds | T L | 260 | ° C |
20N06L Typical Application
- Converters
- Power Supplies
- Power Motor Controls
- Bridge Circuits
20N06L Package Information
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- IRF540NPBF – Infineon Technologies, Power MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
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