20N06L
Power MOSFET 20 Amps, 60 Volts, Logic Level
Manufacturer
ON Semiconductor
Overview
Part: ON Semiconductor NTD20N06L
Type: N-Channel Logic Level Power MOSFET
Key Specs:
- Drain-to-Source Voltage (V_DSS): 60 Vdc
- Continuous Drain Current (I_D): 20 Adc @ T_A = 25°C
- Static Drain-to-Source On-Resistance (R_DS(on)): 39 mΩ (Typ @ V_GS = 5.0 Vdc, I_D = 10 Adc)
- Total Power Dissipation (P_D): 60 W @ T_A = 25°C
- Gate Threshold Voltage (V_GS(th)): 1.0 V (Min) to 2.0 V (Max)
Features:
- N-Channel
- Logic Level
- Designed for low voltage, high speed switching
Applications:
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
Package:
- DPAK (CASE 369C Style 2, CASE 369D Style 2): No dimensions provided.
Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
Electrical Characteristics
| Symbol | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|
| OFF CHARACTERISTICS | |||||
| Drain-to-Source Breakdown (V GS = 0 Vdc, I D = 250 μAα Temperature Coefficient (Pos | V (BR)DSS | 60 - | 71.3 71.2 | Vdc mV/°C | |
| Zero Gate Voltage Drain Curr (VDS = 60 Vdc, VGS = 0 Vd) (VDS = 60 Vdc, VGS = 0 Vd) | I DSS | - - | - - | 1.0 10 | μAdc |
| Gate-Body Leakage Current | (VGS = ± 15 Vdc, VDS = 0 Vdc) | I GSS | - | - | ±100 |
| ON CHARACTERISTICS (Note | e 3.) | ||||
| Gate Threshold Voltage (Note (VDS = VGS, ID = 250 μ Add Threshold Temperature Coeff | ) ' | V GS(th) | 1.0 | 1.6 4.6 | 2.0 |
| Static Drain-to-Source On-F ( VGS = 5.0 Vdc, ID = 10 Ad | R DS(on) | _ | 39 | 48 | mΩ |
| Static Drain-to-Source On-F ( VGS = 5.0 Vdc , ID = 20 Ad ( VGS = 5.0 Vdc , ID = 10 Ad | V DS(on) | 0.81 0.72 | 1.66 - | Vdc | |
| Forward Transconductance ( | 9FS | _ | 17.5 | ı | mhos |
| DYNAMIC CHARACTERISTIC | s | ||||
| Input Capacitance | C iss | - | 707 | 990 | |
| Output Capacitance | (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) | C oss | - | 224 | 320 |
| Transfer Capacitance | , | C rss | _ | 72 | 105 |
| SWITCHING CHARACTERIST | TICS (Note 4.) | ||||
| Turn-On Delay Time | t d(on) | - | 9.6 | 20 | |
| Rise Time | (VDD = 30 Vdc, ID = 20 Adc, VGS = 5.0 Vdc, | t r | _ | 98 | 200 |
| Turn-Off Delay Time | RG = 9.1 Ω (Note 3.) | t d(off) | _ | 25 | 50 |
| Fall Time | t f | - | 62 | 120 | |
| Gate Charge | Q T | - 16.6 | 16.6 | 32 | |
| (VDS = 48 Vdc, ID = 20 Adc, VGS = 5.0 Vdc) (Note 3.) | Q 1 | - | 5.5 | _ | |
| l da ras, (rece s.) | Q 2 | - | 8.5 | _ | |
| SOURCE-DRAIN DIODE CHA | RACTERISTICS | ||||
| Forward On–Voltage | (IS = 20 Adc, VGS = 0 Vdc) (Note 3.) (IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C) | V SD | - | 0.97 0.85 | 1.2 - |
| Reverse Recovery Time | t rr | - | 42 | - | |
| (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) (Note 3.) | t a | - | 30 | _ | |
| 2.3223.7440) (10.00.0.1) | t b | - | 12 | _ | |
| Reverse Recovery Stored Ch | Q RR | - | 0.066 | - | μC |
40 VDS ≥ 10 V DRAIN CURRENT (AMPS) 30 20 TJ = 25°C 10 ڡٞ T.1 = 100°C TJ = -55°C 0 └ 1.6 2.4 3.2 4.8 5.6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current and Gate Voltage
Figure 5. On–Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage (R GS = 10 MΩ) | VDGR | 60 | Vdc |
| Gate-to-Source Voltage | Vdc | ||
| - Continuous | VGS | ± 15 | |
| VGS | ±20 | |
| Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 100°C - Single Pulse ( tp ≤ 10 μ s ) | I D I D I DM | 20 10 60 | Adc Apk |
| Total Power Dissipation @ T A = 25°C Derate above 25°C | P D | 60 0.40 | W/°C |
| Total Power Dissipation @ TA = 25 °C (Note 1.) Total Power Dissipation @ TA = 25 °C (Note 2.) | 1.88 1.36 | W | |
| Operating and Storage Temperature Range | T J , T stg | -55 to +175 | °C |
| Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C ( VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH, IL(pk) = 16 A, VDS = 60 Vdc) | E AS | 128 | mJ |
| Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1.) - Junction-to-Ambient (Note 2.) | Rθ JC Rθ JA Rθ JA | 2.5 80 110 | °C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds | TL | 260 | °C |
-
- When surface mounted to an FR4 board using 1" pad size, (Cu Area 1.127 rm in2 ).
- When surface mounted to an FR4 board using recommended pad size, (Cu Area 0.412 in2).
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