NTD20N06L
Power MOSFETThe NTD20N06L is a power mosfet from ON Semiconductor. View the full NTD20N06L datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
ON Semiconductor
Category
MOSFETsOverview
Part: NTD20N06L — ON Semiconductor
Type: N-Channel Logic Level Power MOSFET
Description: 60 V, 20 A N-Channel logic level power MOSFET with 39 mΩ typical R_DS(on) designed for low voltage, high speed switching applications.
Operating Conditions:
- Drain-to-Source Voltage: up to 60 V
- Gate-to-Source Voltage: ±15 V continuous
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max Drain-to-Source Voltage: 60 Vdc
- Max continuous Drain Current: 20 Adc (@ T_A = 25 °C)
- Max Junction/Storage Temperature: 150 °C
Key Specs:
- Drain-to-Source Breakdown Voltage (V_BR)DSS: 60 V (min) @ V_GS = 0 Vdc, I_D = 250 mAdc
- Gate Threshold Voltage (V_GS(th)): 1.0 V (min), 1.6 V (typ), 2.0 V (max) @ V_DS = V_GS, I_D = 250 mAdc
- Static Drain-to-Source On-Resistance (R_DS(on)): 39 mΩ (typ), 48 mΩ (max) @ V_GS = 5.0 Vdc, I_D = 10 Adc
- Zero Gate Voltage Drain Current (I_DSS): 1.0 mA (max) @ V_DS = 60 Vdc, V_GS = 0 Vdc
- Input Capacitance (C_iss): 707 pF (typ), 990 pF (max) @ V_DS = 25 Vdc, V_GS = 0 Vdc, f = 1.0 MHz
- Total Gate Charge (Q_T): 16.6 nC (typ), 32 nC (max) @ V_DS = 48 Vdc, I_D = 20 Adc, V_GS = 5.0 Vdc
- Turn-On Delay Time (t_d(on)): 9.6 ns (typ), 20 ns (max) @ V_DD = 30 Vdc, I_D = 20 Adc, V_GS = 5.0 Vdc, R_G = 9.1 Ω
- Reverse Recovery Time (t_rr): 42 ns (typ) @ I_S = 20 Adc, V_GS = 0 Vdc, dI_S/dt = 100 A/μs
Features:
- Logic Level Gate Drive
- Low R_DS(on)
- High-speed switching
- Designed for low voltage applications
Applications:
- Converters
- Power Supplies
- Power Motor Controls
- Bridge Circuits
Package:
- DPAK (CASE 369C Style 2)
- DPAK Straight Lead
Applications
- Converters
- Power Supplies
- Power Motor Controls
- Bridge Circuits
Electrical Characteristics
| Characteristic | Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | OFF CHARACTERISTICS | |||||
| Drain-to-Source Breakdown Voltage (Note 3.) (V GS = 0 Vdc, I D = 250 m Adc) Temperature Coefficient (Positive) | Drain-to-Source Breakdown Voltage (Note 3.) (V GS = 0 Vdc, I D = 250 m Adc) Temperature Coefficient (Positive) | V (BR)DSS | 60 - | 71.3 71.2 | - - | Vdc mV/ ° C |
| Zero Gate Voltage Drain Current (V DS = 60 Vdc, V GS = 0 Vdc) (V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C) | Zero Gate Voltage Drain Current (V DS = 60 Vdc, V GS = 0 Vdc) (V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C) | I DSS | - - | - - | 1.0 10 | m Adc |
| Gate-Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc) | Gate-Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc) | I GSS | - | - | ± 100 | nAdc |
| ON CHARACTERISTICS (Note 3.) | ON CHARACTERISTICS (Note 3.) | |||||
| Gate Threshold Voltage (Note 3.) (V DS = V GS , I D = 250 m Adc) Threshold Temperature Coefficient (Negative) | Gate Threshold Voltage (Note 3.) (V DS = V GS , I D = 250 m Adc) Threshold Temperature Coefficient (Negative) | V GS(th) | 1.0 - | 1.6 4.6 | 2.0 - | Vdc mV/ ° C |
| Static Drain-to-Source On-Resistance (Note 3.) (V GS = 5.0 Vdc, I D = 10 Adc) | Static Drain-to-Source On-Resistance (Note 3.) (V GS = 5.0 Vdc, I D = 10 Adc) | R DS(on) | - | 39 | 48 | m W |
| Static Drain-to-Source On-Resistance (Note 3.) (V GS = 5.0 Vdc, I D = 20 Adc) (V GS = 5.0 Vdc, I D = 10 Adc, T J = 150 ° C) | Static Drain-to-Source On-Resistance (Note 3.) (V GS = 5.0 Vdc, I D = 20 Adc) (V GS = 5.0 Vdc, I D = 10 Adc, T J = 150 ° C) | V DS(on) | - - | 0.81 0.72 | 1.66 - | Vdc |
| Forward Transconductance (Note 3.) (V DS = 4.0 Vdc, I D = 10 Adc) | Forward Transconductance (Note 3.) (V DS = 4.0 Vdc, I D = 10 Adc) | g FS | - | 17.5 | - | mhos |
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | |||||
| Input Capacitance | (V 25 Vd V 0 Vd (V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz) f = 1.0 MHz) | C iss | - | 707 | 990 | pF |
| Output Capacitance | (V 25 Vd V 0 Vd (V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz) f = 1.0 MHz) | C oss | - | 224 | 320 | pF |
| Transfer Capacitance | Transfer Capacitance | C rss | - | 72 | 105 | pF |
| SWITCHING CHARACTERISTICS (Note 4.) | SWITCHING CHARACTERISTICS (Note 4.) | |||||
| Turn-On Delay Time | (V DD = 30 Vdc, I D = 20 Adc, V GS = 5 0 Vdc V GS = 5.0 Vdc, R G = 9.1 W ) (Note 3.) R G 9.1 W ) (Note 3.) | t d(on) | - | 9.6 | 20 | ns |
| Rise Time | (V DD = 30 Vdc, I D = 20 Adc, V GS = 5 0 Vdc V GS = 5.0 Vdc, R G = 9.1 W ) (Note 3.) R G 9.1 W ) (Note 3.) | t r | - | 98 | 200 | ns |
| Turn-Off Delay Time | (V DD = 30 Vdc, I D = 20 Adc, V GS = 5 0 Vdc V GS = 5.0 Vdc, R G = 9.1 W ) (Note 3.) R G 9.1 W ) (Note 3.) | t d(off) | - | 25 | 50 | ns |
| Fall Time | (V DD = 30 Vdc, I D = 20 Adc, V GS = 5 0 Vdc V GS = 5.0 Vdc, R G = 9.1 W ) (Note 3.) R G 9.1 W ) (Note 3.) | t f | - | 62 | 120 | ns |
| Gate Charge | (V 48 Vd I 20 Ad (V DS = 48 Vdc, I D = 20 Adc, V GS = 5.0 Vdc) (Note 3.) V GS = 5.0 Vdc) (Note 3.) | Q T | - | 16.6 | 32 | nC |
| (V 48 Vd I 20 Ad (V DS = 48 Vdc, I D = 20 Adc, V GS = 5.0 Vdc) (Note 3.) V GS = 5.0 Vdc) (Note 3.) | Q 1 | - | 5.5 | - | nC | |
| (V 48 Vd I 20 Ad (V DS = 48 Vdc, I D = 20 Adc, V GS = 5.0 Vdc) (Note 3.) V GS = 5.0 Vdc) (Note 3.) | Q 2 | - | 8.5 | - | nC | |
| SOURCE-DRAIN DIODE CHARACTERISTICS | SOURCE-DRAIN DIODE CHARACTERISTICS | |||||
| Forward On-Voltage | (I S = 20 Adc, V GS = 0 Vdc) (Note 3.) (I S = 20 Adc, V GS = 0 Vdc, T J = 150 ° C) | V SD | - - | 0.97 0.85 | 1.2 - | Vdc |
| Reverse Recovery Time | (I 20 Ad V 0 Vd (I S = 20 Adc, V GS = 0 Vdc, dI S /dt = 100 A/ m s) (Note 3.) dI S /dt = 100 A/ m s) (Note 3.) | t rr | - | 42 | - | ns |
| Reverse Recovery Time | (I 20 Ad V 0 Vd (I S = 20 Adc, V GS = 0 Vdc, dI S /dt = 100 A/ m s) (Note 3.) dI S /dt = 100 A/ m s) (Note 3.) | t a | - | 30 | - | ns |
| Reverse Recovery Time | (I 20 Ad V 0 Vd (I S = 20 Adc, V GS = 0 Vdc, dI S /dt = 100 A/ m s) (Note 3.) dI S /dt = 100 A/ m s) (Note 3.) | t b | - | 12 | - | ns |
| Reverse Recovery Stored Charge | Reverse Recovery Stored Charge | Q RR | - | 0.066 | - | m C |
-
Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
-
Switching characteristics are independent of operating junction temperatures.
Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | V DSS | 60 | Vdc |
| Drain-to-Gate Voltage (R GS = 10M W ) | V DGR | 60 | Vdc |
| Gate-to-Source Voltage | Vdc | ||
| - Continuous | V GS | 15 | |
| - Non-repetitive (t p 10 ms) | V GS | 20 | |
| Drain Current | |||
| Continuous@T A = 25 ° C | I D | 20 | Adc |
| - - Continuous@T A = 100 ° C | I D | 10 | |
| - Single Pulse (t p 10 m s) | I DM | 60 | Apk |
| Total Power Dissipation@T A = 25 ° C | P D | 60 | W |
| Derate above 25 ° C | 0.40 1.88 | W/ ° C W | |
| Total Power Dissipation@T A = 25 ° C (Note 1.) Total Power Dissipation@T = 25 C (Note 2.) | 1.36 | W | |
| A ° | |||
| Operating and Storage Temperature Range | T J , T stg | -55 to | ° C |
| Single Pulse Drain-to-Source Avalanche | E AS | 128 | mJ |
| Energy - Starting T J = 25 ° C (V DD = 25 Vdc, V GS = 5.0 Vdc, = 60 | |||
| L = 1.0 mH, I L (pk) = 16 A, V DS Vdc) | ° C/W | ||
| Thermal Resistance - Junction-to-Case | R q JC | 2.5 | |
| - Junction-to-Ambient (Note 1.) | R q JA | 80 | |
| - Junction-to-Ambient (Note 2.) | R q JA | 110 | |
| Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds | T L | 260 | ° C |
Typical Application
- Converters
- Power Supplies
- Power Motor Controls
- Bridge Circuits
Package Information
Related Variants
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