DMG3414U-7
N-Channel Enhancement Mode MOSFETThe DMG3414U-7 is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMG3414U-7 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official DMG3414U-7 datasheet (PDF) — the source this page was extracted from.
Manufacturer
Diodes IncorporatedCategory
MOSFETsPackage
SOT23
Lifecycle
Production (Last Updated: 7 months ago)
DMG3414U-7 Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | SOT-23-3 |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 4.2 A |
| Continuous Drain Current | 4.2A (Ta) |
| Drain to Source Breakdown Voltage | 20 V |
| Drain to Source Resistance | 25 mΩ |
| Drain-Source Voltage (Vdss) | 20 V |
| Drain-Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Element Configuration | Single |
| Fall Time | 9.6 ns |
| FET Type | N-Channel |
| Gate Charge (Qg) | 9.6 nC @ 4.5 V |
| Gate to Source Voltage (Vgs) | 8 V |
| Height | 1.1 mm |
| Input Capacitance | 829.9 pF |
| Input Capacitance (Ciss) | 829.9 pF @ 10 V |
| Introduction Date | 2009-08-06 |
| Lead Free | Lead Free |
| Length | 3 mm |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 780 mW |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation | 780 mW |
| Power Dissipation (Max) | 780mW (Ta) |
| Rds(on) | 25mOhm @ 8.2A, 4.5V Ω |
| Rds On Max | 25 mΩ |
| REACH SVHC | Yes |
| Resistance | 25 mΩ |
| Rise Time | 8.3 ns |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Supplier Device Package | SOT-23-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Turn-Off Delay Time | 40.1 ns |
| Turn-On Delay Time | 8.1 ns |
| Vgs (Max) | ±8V |
| Gate Threshold Voltage | 900mV @ 250µA |
| Weight | 7.994566 mg |
| Width | 1.4 mm |
DMG3414U-7 Overview
Part: DMG3414U — Diodes Incorporated
Type: N-Channel Enhancement Mode MOSFET
Description: 20 V, 4.2 A N-channel enhancement mode MOSFET with 25 mΩ on-resistance at 4.5 V gate drive in a SOT23 package.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max supply voltage: 20 V (Drain-Source Voltage)
- Gate-Source voltage: ±8 V
- Max continuous current: 4.2 A (TA = +25 °C), 3.2 A (TA = +70 °C)
- Pulsed drain current: 30 A
- Power dissipation: 0.78 W
- Max junction/storage temperature: -55 to +150 °C
Key Specs:
- Drain-source breakdown voltage: 20 V min (VGS = 0 V, ID = 250 μA)
- Gate threshold voltage: 0.5 V min, 0.9 V max (VDS = VGS, ID = 250 μA)
- Static drain-source on-resistance: 25 mΩ max (VGS = 4.5 V, ID = 8.2 A)
- Static drain-source on-resistance: 29 mΩ max (VGS = 2.5 V, ID = 3.3 A)
- Static drain-source on-resistance: 37 mΩ max (VGS = 1.8 V, ID = 2.0 A)
- Zero gate voltage drain current: 1.0 μA max (VDS = 20 V, VGS = 0 V, TJ = +25 °C)
- Total gate charge: 9.6 nC typ (VGS = 4.5 V, VDS = 10 V, ID = 8.2 A)
- Turn-on delay time / turn-off delay time: 8.1 ns / 40.1 ns typ (VDD = 10 V, VGS = 4.5 V, RL = 10 Ω, RG = 6 Ω, ID = 1 A)
Features:
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Totally lead-free & fully RoHS compliant
- Halogen and antimony free "Green" device
Package:
- SOT23 (Standard)
DMG3414U-7 Features
- Low On-Resistance
- 25mΩ @ VGS = 4.5V
- 29mΩ @ VGS = 2.5V
- 37mΩ @ VGS = 1.8V
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at
https://www.diodes.com/products/automotive/automotiveproducts/.
- This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
- An Automotive-Compliant Part is Available Under Separate Datasheet (DMG3414UQ)
SOT23 (Standard)
Top View
DMG3414U-7 Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition | |
|---|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | |||||||
| Drain-Source Breakdown Voltage | BV DSS | 20 | V | V GS = 0V, I D = 250μA | |||
| Zero Gate Voltage Drain Current | T J = +25° C | I DSS | 1.0 | μA | V DS = 20V, V GS = 0V | ||
| Gate-Source Leakage | I GSS | ±100 | nA | V GS = ±8V, V DS = 0V | |||
| ON CHARACTERISTICS (Note 7) | |||||||
| Gate Threshold Voltage | V GS(TH) | 0.5 | 0.9 | V | V DS = V GS , I D = 250μA | ||
| Static Drain-Source On-Resistance | R DS(ON) | 19 | 25 | mΩ | V GS = 4.5V, I D = 8.2A | ||
| Static Drain-Source On-Resistance | R DS(ON) | 22 | 29 | mΩ | V GS = 2.5V, I D = 3.3A | ||
| Static Drain-Source On-Resistance | R DS(ON) | 28 | 37 | mΩ | V GS = 1.8V, I D = 2.0A | ||
| Forward Transfer Admittance | \ | Y FS \ | 7 | ||||
| Diode Forward Voltage | V SD | 0.6 | 1 | V | V GS = 0V, I S = 1A | ||
| DYNAMIC CHARACTERISTICS (Note 8) | |||||||
| Input Capacitance | C iss | 829.9 | pF | V DS = 10V, V GS = 0V f = 1.0MHz | |||
| Output Capacitance | C oss | 85.3 | pF | V DS = 10V, V GS = 0V f = 1.0MHz | |||
| Reverse Transfer Capacitance | C rss | 81.2 | pF | V DS = 10V, V GS = 0V f = 1.0MHz | |||
| Total Gate Charge | Qg | 9.6 | nC | V GS = 4.5V, V DS = 10V, I D = 8.2A | |||
| Gate-Source Charge | Qgs | 1.5 | nC | V GS = 4.5V, V DS = 10V, I D = 8.2A | |||
| Gate-Drain Charge | Qgd | 3.5 | nC | V GS = 4.5V, V DS = 10V, I D = 8.2A | |||
| Turn-On Delay Time | t D(ON) | 8.1 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A | |||
| Turn-On Rise Time | t R | 8.3 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A | |||
| Turn-Off Delay Time | t D(OFF) | 40.1 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A | |||
| Turn-Off Fall Time | t F | 9.6 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A |
DMG3414U-7 Absolute Maximum Ratings
| Characteristic | Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | V DSS | 20 | V |
| Gate-Source Voltage | Gate-Source Voltage | Gate-Source Voltage | V GSS | ±8 | V |
| Continuous Drain Current (Note 5) | Steady State | T A = +25° C T A = +70° C | I D | 4.2 3.2 | A |
| Pulsed Drain Current (Note 6) | Pulsed Drain Current (Note 6) | Pulsed Drain Current (Note 6) | I DM | 30 | A |
DMG3414U-7 Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation (Note 5) | P D | 0.78 | W |
| Thermal Resistance, Junction to Ambient @TA = +25° C | R θJA | 162 | ° C/W |
| Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
DMG3414U-7 Package Information
- Case: SOT23
- Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3
- Terminals Connections: See Diagram Below
- Weight: 0.008 grams (Approximate)
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
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