DMG3414U
N-Channel Enhancement Mode MOSFETThe DMG3414U is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMG3414U datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
DMG3414U shares its datasheet with DMG3414U-7, whose page lists every part number it covers.
Official DMG3414U datasheet (PDF) — the source this page was extracted from.
DMG3414U Key Specifications
| Parameter | Value |
|---|---|
| Package Dimensions | SOT23, 2.90mm x 2.40mm typ (D x E) |
| RDS(ON) @ VGS=1.8V | 28mΩ typ, 37mΩ max |
| RDS(ON) @ VGS=2.5V | 22mΩ typ, 29mΩ max |
| RDS(ON) @ VGS=4.5V | 19mΩ typ, 25mΩ max |
| Power Dissipation (PD) | 0.78W |
| Input Capacitance (Ciss) | 829.9pF typ |
| Gate-Source Voltage (VGSS) | ±8V |
| Pulsed Drain Current (IDM) | 30A |
| Drain-Source Voltage (VDSS) | 20V |
| Operating Temperature Range | -55°C to +150°C |
| Total Gate Charge (Qg @ 4.5V) | 9.6nC typ |
| Gate Threshold Voltage (VGS(TH)) | 0.5V to 0.9V |
| Continuous Drain Current (ID, TA=25°C) | 4.2A |
| Continuous Drain Current (ID, TA=70°C) | 3.2A |
| Thermal Resistance Junction To Ambient (RθJA) | 162°C/W |
DMG3414U Overview
Part: DMG3414U — Diodes Incorporated
Type: N-Channel Enhancement Mode MOSFET
Description: 20 V, 4.2 A N-channel enhancement mode MOSFET with 25 mΩ on-resistance at 4.5 V gate drive in a SOT23 package.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max supply voltage: 20 V (Drain-Source Voltage)
- Gate-Source voltage: ±8 V
- Max continuous current: 4.2 A (TA = +25 °C), 3.2 A (TA = +70 °C)
- Pulsed drain current: 30 A
- Power dissipation: 0.78 W
- Max junction/storage temperature: -55 to +150 °C
Key Specs:
- Drain-source breakdown voltage: 20 V min (VGS = 0 V, ID = 250 μA)
- Gate threshold voltage: 0.5 V min, 0.9 V max (VDS = VGS, ID = 250 μA)
- Static drain-source on-resistance: 25 mΩ max (VGS = 4.5 V, ID = 8.2 A)
- Static drain-source on-resistance: 29 mΩ max (VGS = 2.5 V, ID = 3.3 A)
- Static drain-source on-resistance: 37 mΩ max (VGS = 1.8 V, ID = 2.0 A)
- Zero gate voltage drain current: 1.0 μA max (VDS = 20 V, VGS = 0 V, TJ = +25 °C)
- Total gate charge: 9.6 nC typ (VGS = 4.5 V, VDS = 10 V, ID = 8.2 A)
- Turn-on delay time / turn-off delay time: 8.1 ns / 40.1 ns typ (VDD = 10 V, VGS = 4.5 V, RL = 10 Ω, RG = 6 Ω, ID = 1 A)
Features:
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Totally lead-free & fully RoHS compliant
- Halogen and antimony free "Green" device
Package:
- SOT23 (Standard)
DMG3414U Features
- Low On-Resistance
- 25mΩ @ VGS = 4.5V
- 29mΩ @ VGS = 2.5V
- 37mΩ @ VGS = 1.8V
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at
https://www.diodes.com/products/automotive/automotiveproducts/.
- This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
- An Automotive-Compliant Part is Available Under Separate Datasheet (DMG3414UQ)
SOT23 (Standard)
Top View
DMG3414U Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition | |
|---|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | |||||||
| Drain-Source Breakdown Voltage | BV DSS | 20 | V | V GS = 0V, I D = 250μA | |||
| Zero Gate Voltage Drain Current | T J = +25° C | I DSS | 1.0 | μA | V DS = 20V, V GS = 0V | ||
| Gate-Source Leakage | I GSS | ±100 | nA | V GS = ±8V, V DS = 0V | |||
| ON CHARACTERISTICS (Note 7) | |||||||
| Gate Threshold Voltage | V GS(TH) | 0.5 | 0.9 | V | V DS = V GS , I D = 250μA | ||
| Static Drain-Source On-Resistance | R DS(ON) | 19 | 25 | mΩ | V GS = 4.5V, I D = 8.2A | ||
| Static Drain-Source On-Resistance | R DS(ON) | 22 | 29 | mΩ | V GS = 2.5V, I D = 3.3A | ||
| Static Drain-Source On-Resistance | R DS(ON) | 28 | 37 | mΩ | V GS = 1.8V, I D = 2.0A | ||
| Forward Transfer Admittance | \ | Y FS \ | 7 | ||||
| Diode Forward Voltage | V SD | 0.6 | 1 | V | V GS = 0V, I S = 1A | ||
| DYNAMIC CHARACTERISTICS (Note 8) | |||||||
| Input Capacitance | C iss | 829.9 | pF | V DS = 10V, V GS = 0V f = 1.0MHz | |||
| Output Capacitance | C oss | 85.3 | pF | V DS = 10V, V GS = 0V f = 1.0MHz | |||
| Reverse Transfer Capacitance | C rss | 81.2 | pF | V DS = 10V, V GS = 0V f = 1.0MHz | |||
| Total Gate Charge | Qg | 9.6 | nC | V GS = 4.5V, V DS = 10V, I D = 8.2A | |||
| Gate-Source Charge | Qgs | 1.5 | nC | V GS = 4.5V, V DS = 10V, I D = 8.2A | |||
| Gate-Drain Charge | Qgd | 3.5 | nC | V GS = 4.5V, V DS = 10V, I D = 8.2A | |||
| Turn-On Delay Time | t D(ON) | 8.1 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A | |||
| Turn-On Rise Time | t R | 8.3 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A | |||
| Turn-Off Delay Time | t D(OFF) | 40.1 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A | |||
| Turn-Off Fall Time | t F | 9.6 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A |
DMG3414U Absolute Maximum Ratings
| Characteristic | Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | V DSS | 20 | V |
| Gate-Source Voltage | Gate-Source Voltage | Gate-Source Voltage | V GSS | ±8 | V |
| Continuous Drain Current (Note 5) | Steady State | T A = +25° C T A = +70° C | I D | 4.2 3.2 | A |
| Pulsed Drain Current (Note 6) | Pulsed Drain Current (Note 6) | Pulsed Drain Current (Note 6) | I DM | 30 | A |
DMG3414U Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation (Note 5) | P D | 0.78 | W |
| Thermal Resistance, Junction to Ambient @TA = +25° C | R θJA | 162 | ° C/W |
| Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
DMG3414U Package Information
- Case: SOT23
- Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3
- Terminals Connections: See Diagram Below
- Weight: 0.008 grams (Approximate)
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMG3414U-7 | Diodes Incorporated | TO-236-3, SC-59, SOT-23-3 |
| DMG3414UQ | Diodes Incorporated | SOT23 |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
- ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
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