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DMG3414U

The DMG3414U is an electronic component from Diodes Inc.. View the full DMG3414U datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Diodes Inc.

Category

MOSFETs

Features

  • Low On-Resistance
  • 25mΩ @ VGS = 4.5V
  • 29mΩ @ VGS = 2.5V
  • 37mΩ @ VGS = 1.8V
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. 'Green' Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at

https://www.diodes.com/products/automotive/automotiveproducts/.

  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.

https://www.diodes.com/quality/product-definitions/

  • An Automotive-Compliant Part is Available Under Separate Datasheet (DMG3414UQ)

SOT23 (Standard)

Top View

Electrical Characteristics

CharacteristicSymbolMinTypMaxUnitTest Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown VoltageBV DSS20VV GS = 0V, I D = 250μA
Zero Gate Voltage Drain CurrentT J = +25° CI DSS1.0μAV DS = 20V, V GS = 0V
Gate-Source LeakageI GSS±100nAV GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold VoltageV GS(TH)0.50.9VV DS = V GS , I D = 250μA
Static Drain-Source On-ResistanceR DS(ON)1925V GS = 4.5V, I D = 8.2A
Static Drain-Source On-ResistanceR DS(ON)2229V GS = 2.5V, I D = 3.3A
Static Drain-Source On-ResistanceR DS(ON)2837V GS = 1.8V, I D = 2.0A
Forward Transfer Admittance\Y FS \7
Diode Forward VoltageV SD0.61VV GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input CapacitanceC iss829.9pFV DS = 10V, V GS = 0V f = 1.0MHz
Output CapacitanceC oss85.3pFV DS = 10V, V GS = 0V f = 1.0MHz
Reverse Transfer CapacitanceC rss81.2pFV DS = 10V, V GS = 0V f = 1.0MHz
Total Gate ChargeQg9.6nCV GS = 4.5V, V DS = 10V, I D = 8.2A
Gate-Source ChargeQgs1.5nCV GS = 4.5V, V DS = 10V, I D = 8.2A
Gate-Drain ChargeQgd3.5nCV GS = 4.5V, V DS = 10V, I D = 8.2A
Turn-On Delay Timet D(ON)8.1nsV DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A
Turn-On Rise Timet R8.3nsV DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A
Turn-Off Delay Timet D(OFF)40.1nsV DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A
Turn-Off Fall Timet F9.6nsV DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A

Absolute Maximum Ratings

CharacteristicCharacteristicCharacteristicSymbolValueUnit
Drain-Source VoltageDrain-Source VoltageDrain-Source VoltageV DSS20V
Gate-Source VoltageGate-Source VoltageGate-Source VoltageV GSS±8V
Continuous Drain Current (Note 5)Steady StateT A = +25° C T A = +70° CI D4.2 3.2A
Pulsed Drain Current (Note 6)Pulsed Drain Current (Note 6)Pulsed Drain Current (Note 6)I DM30A

Thermal Information

CharacteristicSymbolValueUnit
Power Dissipation (Note 5)P D0.78W
Thermal Resistance, Junction to Ambient @TA = +25° CR θJA162° C/W
Operating and Storage Temperature RangeT J, T STG-55 to +150° C

Package Information

  • Case: SOT23
  • Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3
  • Terminals Connections: See Diagram Below
  • Weight: 0.008 grams (Approximate)

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
DMG3414U-7Diodes Inc.TO-236-3, SC-59, SOT-23-3
DMG3414UQDiodes Inc.
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