DMG3414UQ
N-Channel Enhancement Mode MOSFETThe DMG3414UQ is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMG3414UQ datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
DMG3414UQ shares its datasheet with DMG3414U-7, whose page lists every part number it covers.
Official DMG3414UQ datasheet (PDF) — the source this page was extracted from.
DMG3414UQ Key Specifications
| Parameter | Value |
|---|---|
| On Resistance | 25mΩ (at VGS=4.5V) |
| Power Dissipation | 0.78W |
| Package Dimensions | 2.9mm x 1.3mm (nominal SOT23) |
| Gate Source Voltage | ±8V |
| Drain Source Voltage | 20V |
| Pulsed Drain Current | 30A |
| Gate Threshold Voltage | 0.5V to 0.9V |
| Continuous Drain Current | 4.2A (at TA=+25°C) |
| Operating Temperature Range | -55°C to +150°C |
DMG3414UQ Overview
Part: DMG3414U — Diodes Incorporated
Type: N-Channel Enhancement Mode MOSFET
Description: 20 V, 4.2 A N-channel enhancement mode MOSFET with 25 mΩ on-resistance at 4.5 V gate drive in a SOT23 package.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max supply voltage: 20 V (Drain-Source Voltage)
- Gate-Source voltage: ±8 V
- Max continuous current: 4.2 A (TA = +25 °C), 3.2 A (TA = +70 °C)
- Pulsed drain current: 30 A
- Power dissipation: 0.78 W
- Max junction/storage temperature: -55 to +150 °C
Key Specs:
- Drain-source breakdown voltage: 20 V min (VGS = 0 V, ID = 250 μA)
- Gate threshold voltage: 0.5 V min, 0.9 V max (VDS = VGS, ID = 250 μA)
- Static drain-source on-resistance: 25 mΩ max (VGS = 4.5 V, ID = 8.2 A)
- Static drain-source on-resistance: 29 mΩ max (VGS = 2.5 V, ID = 3.3 A)
- Static drain-source on-resistance: 37 mΩ max (VGS = 1.8 V, ID = 2.0 A)
- Zero gate voltage drain current: 1.0 μA max (VDS = 20 V, VGS = 0 V, TJ = +25 °C)
- Total gate charge: 9.6 nC typ (VGS = 4.5 V, VDS = 10 V, ID = 8.2 A)
- Turn-on delay time / turn-off delay time: 8.1 ns / 40.1 ns typ (VDD = 10 V, VGS = 4.5 V, RL = 10 Ω, RG = 6 Ω, ID = 1 A)
Features:
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Totally lead-free & fully RoHS compliant
- Halogen and antimony free "Green" device
Package:
- SOT23 (Standard)
DMG3414UQ Features
- Low On-Resistance
- 25mΩ @ VGS = 4.5V
- 29mΩ @ VGS = 2.5V
- 37mΩ @ VGS = 1.8V
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at
https://www.diodes.com/products/automotive/automotiveproducts/.
- This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
- An Automotive-Compliant Part is Available Under Separate Datasheet (DMG3414UQ)
SOT23 (Standard)
Top View
DMG3414UQ Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition | |
|---|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | |||||||
| Drain-Source Breakdown Voltage | BV DSS | 20 | V | V GS = 0V, I D = 250μA | |||
| Zero Gate Voltage Drain Current | T J = +25° C | I DSS | 1.0 | μA | V DS = 20V, V GS = 0V | ||
| Gate-Source Leakage | I GSS | ±100 | nA | V GS = ±8V, V DS = 0V | |||
| ON CHARACTERISTICS (Note 7) | |||||||
| Gate Threshold Voltage | V GS(TH) | 0.5 | 0.9 | V | V DS = V GS , I D = 250μA | ||
| Static Drain-Source On-Resistance | R DS(ON) | 19 | 25 | mΩ | V GS = 4.5V, I D = 8.2A | ||
| Static Drain-Source On-Resistance | R DS(ON) | 22 | 29 | mΩ | V GS = 2.5V, I D = 3.3A | ||
| Static Drain-Source On-Resistance | R DS(ON) | 28 | 37 | mΩ | V GS = 1.8V, I D = 2.0A | ||
| Forward Transfer Admittance | \ | Y FS \ | 7 | ||||
| Diode Forward Voltage | V SD | 0.6 | 1 | V | V GS = 0V, I S = 1A | ||
| DYNAMIC CHARACTERISTICS (Note 8) | |||||||
| Input Capacitance | C iss | 829.9 | pF | V DS = 10V, V GS = 0V f = 1.0MHz | |||
| Output Capacitance | C oss | 85.3 | pF | V DS = 10V, V GS = 0V f = 1.0MHz | |||
| Reverse Transfer Capacitance | C rss | 81.2 | pF | V DS = 10V, V GS = 0V f = 1.0MHz | |||
| Total Gate Charge | Qg | 9.6 | nC | V GS = 4.5V, V DS = 10V, I D = 8.2A | |||
| Gate-Source Charge | Qgs | 1.5 | nC | V GS = 4.5V, V DS = 10V, I D = 8.2A | |||
| Gate-Drain Charge | Qgd | 3.5 | nC | V GS = 4.5V, V DS = 10V, I D = 8.2A | |||
| Turn-On Delay Time | t D(ON) | 8.1 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A | |||
| Turn-On Rise Time | t R | 8.3 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A | |||
| Turn-Off Delay Time | t D(OFF) | 40.1 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A | |||
| Turn-Off Fall Time | t F | 9.6 | ns | V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A |
DMG3414UQ Absolute Maximum Ratings
| Characteristic | Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | V DSS | 20 | V |
| Gate-Source Voltage | Gate-Source Voltage | Gate-Source Voltage | V GSS | ±8 | V |
| Continuous Drain Current (Note 5) | Steady State | T A = +25° C T A = +70° C | I D | 4.2 3.2 | A |
| Pulsed Drain Current (Note 6) | Pulsed Drain Current (Note 6) | Pulsed Drain Current (Note 6) | I DM | 30 | A |
DMG3414UQ Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation (Note 5) | P D | 0.78 | W |
| Thermal Resistance, Junction to Ambient @TA = +25° C | R θJA | 162 | ° C/W |
| Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
DMG3414UQ Package Information
- Case: SOT23
- Case Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3
- Terminals Connections: See Diagram Below
- Weight: 0.008 grams (Approximate)
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMG3414U | Diodes Incorporated | SOT23 |
| DMG3414U-7 | Diodes Incorporated | TO-236-3, SC-59, SOT-23-3 |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
- ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET
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