IRLML0100

Part: IRLML6344TRPbF — Infineon Technologies (International Rectifier)

Type: N-Channel HEXFET Power MOSFET

Description: 30 V, ±12 V VGS N-channel power MOSFET with RDS(on) max 29 mΩ at VGS = 4.5 V and 5.0 A continuous drain current in a SOT-23 (Micro3) package.

Operating Conditions:

• Supply voltage: not applicable (VDS up to 30 V; VGS ±12 V max)
• Operating temperature: -55 to +150 °C (junction)
• Gate threshold voltage VGS(th): 0.5–1.1 V (VDS = VGS, ID = 10 μA)

Absolute Maximum Ratings:

• Drain-source voltage VDS: 30 V
• Gate-source voltage VGS: ±12 V
• Continuous drain current ID: 5.0 A (TA = 25 °C), 4.0 A (TA = 70 °C)
• Pulsed drain current IDM: 25 A
• Power dissipation PD: 1.3 W (TA = 25 °C), 0.8 W (TA = 70 °C)
• Junction and storage temperature: -55 to +150 °C

Key Specs:

• RDS(on): 22 mΩ typ, 29 mΩ max (VGS = 4.5 V, ID = 5.0 A); 37 mΩ max at VGS = 2.5 V
• V(BR)DSS: 30 V min (VGS = 0 V, ID = 250 μA)
• VGS(th): 0.5 V min, 0.8 V typ, 1.1 V max (VDS = VGS, ID = 10 μA)
• IDSS: 1.0 μA max (VDS = 24 V); 150 μA max at TJ = 125 °C
• IGSS: ±100 nA max (VGS = ±12 V)
• Total gate charge Qg: 6.8 nC typ (ID = 5.0 A, VDS = 15 V, VGS = 4.5 V)
• Ciss / Coss / Crss: 650 / 65 / 46 pF typ (VDS = 25 V, f = 1 MHz)
• Switching (VDD = 15 V, ID = 1.0 A, RG = 6.8 Ω): td(off) 22 ns typ, tf 9.1 ns typ
• Body diode VSD: 1.2 V max (IS = 5.0 A); trr 10 ns typ
• Thermal resistance RθJA: 100 °C/W max

Features:

• Low RDS(on) (<29 mΩ)
• Industry-standard SOT-23 package
• RoHS compliant, lead-free, bromide-free and halogen-free
• MSL1, consumer qualification

Applications:

• Load / system switch

Package:

• Micro3 (SOT-23), tape and reel, 3000 pieces per reel

• Industry-standard SOT-23 Package
• RoHS compliant containing no lead, no bromide and no halogen
• MSL1, Consumer Qualification

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

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