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IRLML0040

HEXFET-Power MOSFET

The IRLML0040 is a hexfet-power mosfet from Infineon Technologies. View the full IRLML0040 datasheet below including key specifications, absolute maximum ratings.

IRLML0040 shares its datasheet with IRLML6344, whose page lists every part number it covers.

Official IRLML0040 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

Category

MOSFETs

Package

SOT-23

IRLML0040 Key Specifications

ParameterValue
RDS(On) Max @ VGS=2.5V37 mΩ
RDS(On) Max @ VGS=4.5V29 mΩ
Total Gate Charge (Qg)6.8 nC
Input Capacitance (Ciss)650 pF
Drain-Source Voltage (VDS)30 V
Moisture Sensitivity LevelMSL1
Pulsed Drain Current (IDM)25 A
Operating Temperature Range-55°C to +150°C
Gate-Source Voltage (VGS) Max±12 V
Gate Threshold Voltage (VGS(Th))0.5 V to 1.1 V
Power Dissipation (PD) @ TA=25°C1.3 W
Junction-To-Ambient Thermal Resistance100 °C/W
Continuous Drain Current (ID) @ TA=25°C5.0 A
Continuous Drain Current (ID) @ TA=70°C4.0 A

IRLML0040 Overview

Part: IRLML6344TRPbF — Infineon Technologies (International Rectifier)

Type: N-Channel HEXFET Power MOSFET

Description: 30 V, ±12 V VGS N-channel power MOSFET with RDS(on) max 29 mΩ at VGS = 4.5 V and 5.0 A continuous drain current in a SOT-23 (Micro3) package.

Operating Conditions:

  • Supply voltage: not applicable (VDS up to 30 V; VGS ±12 V max)
  • Operating temperature: -55 to +150 °C (junction)
  • Gate threshold voltage VGS(th): 0.5–1.1 V (VDS = VGS, ID = 10 μA)

Absolute Maximum Ratings:

  • Drain-source voltage VDS: 30 V
  • Gate-source voltage VGS: ±12 V
  • Continuous drain current ID: 5.0 A (TA = 25 °C), 4.0 A (TA = 70 °C)
  • Pulsed drain current IDM: 25 A
  • Power dissipation PD: 1.3 W (TA = 25 °C), 0.8 W (TA = 70 °C)
  • Junction and storage temperature: -55 to +150 °C

Key Specs:

  • RDS(on): 22 mΩ typ, 29 mΩ max (VGS = 4.5 V, ID = 5.0 A); 37 mΩ max at VGS = 2.5 V
  • V(BR)DSS: 30 V min (VGS = 0 V, ID = 250 μA)
  • VGS(th): 0.5 V min, 0.8 V typ, 1.1 V max (VDS = VGS, ID = 10 μA)
  • IDSS: 1.0 μA max (VDS = 24 V); 150 μA max at TJ = 125 °C
  • IGSS: ±100 nA max (VGS = ±12 V)
  • Total gate charge Qg: 6.8 nC typ (ID = 5.0 A, VDS = 15 V, VGS = 4.5 V)
  • Ciss / Coss / Crss: 650 / 65 / 46 pF typ (VDS = 25 V, f = 1 MHz)
  • Switching (VDD = 15 V, ID = 1.0 A, RG = 6.8 Ω): td(off) 22 ns typ, tf 9.1 ns typ
  • Body diode VSD: 1.2 V max (IS = 5.0 A); trr 10 ns typ
  • Thermal resistance RθJA: 100 °C/W max

Features:

  • Low RDS(on) (<29 mΩ)
  • Industry-standard SOT-23 package
  • RoHS compliant, lead-free, bromide-free and halogen-free
  • MSL1, consumer qualification

Applications:

  • Load / system switch

Package:

  • Micro3 (SOT-23), tape and reel, 3000 pieces per reel

IRLML0040 Features

  • Industry-standard SOT-23 Package
  • RoHS compliant containing no lead, no bromide and no halogen
  • MSL1, Consumer Qualification

IRLML0040 Absolute Maximum Ratings

SymbolParameterMax.Units
V DSDrain-Source Voltage30V
I D @T A = 25°CContinuous Drain Current, V GS @10V5.0A
I D @T A = 70°CContinuous Drain Current, V GS @10V4.0A
I DMPulsed Drain Current25A
P D @T A = 25°CMaximum Power Dissipation1.3W
P D @T A = 70°CMaximum Power Dissipation0.8W
Linear Derating Factor0.01W/°C
V GSGate-to-Source Voltage± 12V
T J, T STGJunction and Storage Temperature Range-55 to + 150°C

IRLML0040 Thermal Information

SymbolParameterTyp.Max.Units
R θ JAJunction-to-Ambient---100°C/W
R θ JAJunction-to-Ambient (t<10s)---99°C/W

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

/c101

/c102

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
IRFML8244Infineon TechnologiesSOT-23 (Micro3™)
IRFML9244Infineon TechnologiesSOT-23
IRLML0030Infineon TechnologiesSOT-23
IRLML0060Infineon Technologies—
IRLML0100Infineon Technologies—
IRLML2030Infineon TechnologiesSOT-23
IRLML2060Infineon Technologies—
IRLML2244Infineon TechnologiesSOT-23
IRLML2246Infineon TechnologiesSOT-23
IRLML2402Infineon TechnologiesSOT-23
IRLML2502Infineon Technologies—
IRLML2803International RectifierSOT-23
IRLML5103Infineon TechnologiesSOT-23
IRLML5203Infineon TechnologiesSOT-23
IRLML6244Infineon TechnologiesSOT-23
IRLML6246Infineon TechnologiesSOT-23
IRLML6302Infineon Technologies—
IRLML6344Infineon TechnologiesSOT-23
IRLML6346Infineon TechnologiesSOT-23
IRLML6401Infineon Technologies—
IRLML6402Infineon TechnologiesSOT-23
IRLML9301Infineon TechnologiesSOT-23
IRLML9303Infineon Technologies—

Other MOSFETs

  • 20N06D – onsemi, Power MOSFET
  • AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
  • 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • 2N7002 – Nexperia, N-channel Trench MOSFET
  • ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET

All MOSFETs datasheetsAll Infineon Technologies datasheets (140)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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