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DMN2044UCB4-7

N-Channel MOSFET

The DMN2044UCB4-7 is a n-channel mosfet from Diodes Incorporated. View the full DMN2044UCB4-7 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official DMN2044UCB4-7 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Diodes Incorporated

Category

MOSFETs

Package

4-UFBGA, WLBGA

Lifecycle

Production (Last Updated: 7 months ago)

DMN2044UCB4-7 Key Specifications

ParameterValue
China RoHSCompliant
Continuous Drain Current (ID)4.5 A
Continuous Drain Current3.3A (Ta)
Drain to Source Resistance40 mΩ
Drain-Source Voltage (Vdss)20 V
Drain-Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
FET TypeN-Channel
Gate Charge (Qg)47 nC @ 8 V
Input Capacitance (Ciss)1400 pF @ 10 V
Lifecycle StatusProduction (Last Updated: 7 months ago)
Max Operating Temperature150 °C
Max Power Dissipation1.18 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Mounting TypeSurface Mount
Number of Elements1
Number of Terminals4
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case4-UFBGA, WLBGA
Power Dissipation (Max)720mW
Rds(on)40mOhm @ 1.5A, 4.5V Ω
REACH SVHCYes
RoHSCompliant
Supplier Device PackageU-WLB1010-4
Diode TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Gate Threshold Voltage900mV @ 250µA

DMN2044UCB4-7 Overview

Part: DMN2044UCB4 — Diodes Incorporated

Type: N-Channel Enhancement Mode MOSFET

Description: 20 V, 4.5 A N-channel MOSFET with RDS(ON) down to 40 mΩ in an ultra-small 1.0 mm × 1.0 mm wafer-level package.

Operating Conditions:

  • Operating temperature: -55 to +150 °C

Absolute Maximum Ratings:

  • Max supply voltage: Drain-Source Voltage (VDSS) = 20 V, Gate-Source Voltage (VGSS) = 8 V
  • Max continuous current: 4.5 A (TA = +25 °C, VGS = 4.5 V, t = 10 s, Note 6)
  • Max junction/storage temperature: -55 to +150 °C

Key Specs:

  • Drain-Source Breakdown Voltage: 20 V min (VGS = 0 V, ID = 250 μA)
  • Gate Threshold Voltage (VGS(TH)): 0.4 V min, 0.9 V max (VDS = VGS, ID = 250 μA)
  • Static Drain-Source On-Resistance (RDS(ON)): 40 mΩ max (VGS = 4.5 V, ID = 1.5 A)
  • Static Drain-Source On-Resistance (RDS(ON)): 50 mΩ max (VGS = 2.5 V, ID = 1.0 A)
  • Static Drain-Source On-Resistance (RDS(ON)): 56 mΩ max (VGS = 1.8 V, ID = 1.0 A)
  • Static Drain-Source On-Resistance (RDS(ON)): 70 mΩ max (VGS = 1.5 V, ID = 0.5 A)
  • Input Capacitance (Ciss): 1056 pF typ, 1400 pF max (VDS = 10 V, VGS = 0 V, f = 1.0 MHz)
  • Total Gate Charge (Qg): 13.1 nC typ, 26.5 nC max (VDS = 10 V, ID = 1.5 A, VGS = 4.5 V)

Features:

  • Ultra-small 1.0 mm × 1.0 mm package
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free, "green" device

Applications:

  • Portable applications
  • Load switch
  • Power management functions

Package:

  • U-WLB1010-4 (Type B) (4-bump wafer-level chip-scale package, 1.05 mm × 1.05 mm typ)

DMN2044UCB4-7 Features

  • Ultra Small 1.0mm x 1.0mm Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. 'Green' Device (Note 3)

DMN2044UCB4-7 Applications

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a high performance MOSFET in ultra-small 1.0mm x 1.0mm package.

  • Portable Applications
  • Load Switch
  • Power Management Functions

DMN2044UCB4-7 Electrical Characteristics

CharacteristicSymbolMinTypMaxUnitTest Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown VoltageBV DSS20--VV GS = 0V, I D = 250μA
Zero Gate Voltage Drain CurrentI--1.0μAV DS = 20V, V GS = 0V
DSS--1.0mAV DS = 20V, V GS = 0V , T J = +150° C
Gate-Body LeakageI GSS--100nAV GS = 8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold VoltageV GS(TH)0.4-0.9VV DS = V GS , I D = 250μA
Static Drain-Source On-ResistanceR DS(ON)-29 32 36 4340 50 56 70mΩV GS = 4.5V, I D = 1.5A V GS = 2.5V, I D = 1.0A V GS = 1.8V, I D = 1.0A V GS = 1.5V, I D = 0.5A
Body Diode Forward VoltageV SD-0.71.2VV GS = 0V, I S = 1.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input CapacitanceC iss-10561400pFV DS = 10V, V GS = 0V, f = 1.0MHz
Output CapacitanceC oss-117160pFV DS = 10V, V GS = 0V, f = 1.0MHz
Reverse Transfer CapacitanceC rss-105140pFV DS = 10V, V GS = 0V, f = 1.0MHz
Gate ResistanceR g-0.981.5ΩV DS = 0V, V GS = 0V, f = 1MHz
Total Gate Charge (V GS = 4.5V)Q g-13.126.5nCV DS = 10V, I D = 1.5A
Total Gate Charge (V GS = 8V)Q g-23.247nCV DS = 10V, I D = 1.5A
Gate-Source ChargeQ gs-1.4-nCV DS = 10V, I D = 1.5A
Gate-Drain ChargeQ gd-2.1-nCV DS = 10V, I D = 1.5A
Reverse Recovery ChargeQ RR-2.166nCI F = 1.5A, di/dt = 100A/μs
Body Diode Reverse Recovery Timet RR-7.9218nsI F = 1.5A, di/dt = 100A/μs
Reverse Recovery Fall Timet A-6.5-nsI F = 1.5A, di/dt = 100A/μs
Reverse Recovery Rise Timet B-4.12-nsI F = 1.5A, di/dt = 100A/μs
Turn-On Delay Timet D(ON)-4.5710nsV DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω
Turn-On Rise Timet R-6.3315nsV DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω
Turn-Off Delay Timet D(OFF)-19.8442nsV DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω
Turn-Off Fall Timet F-2.966nsV DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω
Turn-On Delay Timet D(ON)-2.886nsV DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω
Turn-On Rise Timet R-6.3114nsV DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω
Turn-Off Delay Timet D(OFF)-14.930nsV DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω
Turn-Off Fall Timet F-1.714nsV DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω

Notes:

  1. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

  2. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

  3. Short duration pulse test used to minimize self-heating effect.

  4. Guaranteed by design. Not subject to production testing.

DMN2044UCB4-7 Absolute Maximum Ratings

CharacteristicCharacteristicSymbolValueUnit
Drain-Source VoltageDrain-Source VoltageV DSS20V
Gate-Source VoltageGate-Source VoltageV GSS8V
Continuous Source Current @VGS = 4.5V, t=10s (Note 5)T A = +25° C T A = +70° CI D3.3 2.6A
Continuous Source Current @VGS = 4.5V, t=10s (Note 6)T A = +25° C T A = +70° CI D4.5 3.6A
Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%)Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%)I DM16A
Continuous Source-Drain Diode CurrentContinuous Source-Drain Diode CurrentI S1.2A
Pulse Diode Forward CurrentPulse Diode Forward CurrentI SM10A

DMN2044UCB4-7 Thermal Information

CharacteristicSymbolValueUnit
Total Power Dissipation (Note 5)P D0.72W
Thermal Resistance, Junction to Ambient (Note 5)R θJA175° C/W
Thermal Resistance, Junction to Case (Note 5)R θJC40° C/W
Total Power Dissipation (Note 6)P D1.18W
Thermal Resistance, Junction to Ambient (Note 6)R θJA106° C/W
Operating and Storage Temperature RangeT J, T STG-55 to +150° C

DMN2044UCB4-7 Package Information

  • Case: U-WLB1010-4 (Type B)
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal: Finish -SnAgCu. Solderable per MIL-STD-202 Method 208
  • Terminal Connections: See Diagram

NEW PRODUCT

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
DMN2044UCB4Diodes IncorporatedU-WLB1010-4

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  • DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • STL110N10F7 – STMicroelectronics, N-channel Power MOSFET
  • 2N7002 – Nexperia, N-channel Trench MOSFET
  • 20N06L – onsemi, Power MOSFET

All MOSFETs datasheetsAll Diodes datasheets (217)

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