DMN2044UCB4-7
The DMN2044UCB4-7 is an electronic component from Diodes Inc.. View the full DMN2044UCB4-7 datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Manufacturer
Diodes Inc.
Category
MOSFETs
Package
4-UFBGA, WLBGA
Lifecycle
Production (Last Updated: 7 months ago)
Key Specifications
| Parameter | Value |
|---|---|
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 4.5 A |
| Continuous Drain Current | 3.3A (Ta) |
| Drain to Source Resistance | 40 mΩ |
| Drain-Source Voltage (Vdss) | 20 V |
| Drain-Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 47 nC @ 8 V |
| Input Capacitance (Ciss) | 1400 pF @ 10 V |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.18 W |
| Min Breakdown Voltage | 20 V |
| Min Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 4-UFBGA, WLBGA |
| Power Dissipation (Max) | 720mW |
| Rds(on) | 40mOhm @ 1.5A, 4.5V Ω |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Supplier Device Package | U-WLB1010-4 |
| Supplier Device Package | U-WLB1010-4 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Gate Threshold Voltage | 900mV @ 250µA |
Overview
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a high performance MOSFET in ultra-small 1.0mm x 1.0mm package.
- Portable Applications
- Load Switch
- Power Management Functions
Features
- Ultra Small 1.0mm x 1.0mm Package
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a high performance MOSFET in ultra-small 1.0mm x 1.0mm package.
- Portable Applications
- Load Switch
- Power Management Functions
Pin Configuration
DMN2044UCB4-7 Pinout
Package: 4-UFBGA (U-WLB1010-4 Type B), 1.0mm × 1.0mm
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | S | I/O | Source |
| 2 | S | I/O | Source |
| 3 | G | I | Gate |
| 4 | D | I/O | Drain |
Notes
- Package: Ultra-small 4-pin wafer-level ball grid array (WLBGA), 1.0mm × 1.0mm footprint.
- Pin Layout: Top view shows two Source (S) pads in upper positions, Gate (G) in lower-left, and Drain (D) in lower-right. The dot marking indicates pin 1 location (upper-left corner).
- Functional Description: N-channel enhancement-mode MOSFET with integrated body diode. Multiple source pads (pins 1 & 2) provide parallel current paths for improved thermal and electrical performance.
- Maximum Ratings: V_DSS = 20V, V_GSS = 8V, I_D (continuous @ 25°C, 4.5V gate) = 4.5A, I_DM (pulsed) = 16A.
- RDS(ON): 40mΩ @ V_GS = 4.5V, I_D = 1.5A (typical).
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 20 | - | - | V | V GS = 0V, I D = 250μA |
| Zero Gate Voltage Drain Current | I | - | - | 1.0 | μA | V DS = 20V, V GS = 0V |
| DSS | - | - | 1.0 | mA | V DS = 20V, V GS = 0V , T J = +150° C | |
| Gate-Body Leakage | I GSS | - | - | 100 | nA | V GS = 8V, V DS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | V GS(TH) | 0.4 | - | 0.9 | V | V DS = V GS , I D = 250μA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 29 32 36 43 | 40 50 56 70 | mΩ | V GS = 4.5V, I D = 1.5A V GS = 2.5V, I D = 1.0A V GS = 1.8V, I D = 1.0A V GS = 1.5V, I D = 0.5A |
| Body Diode Forward Voltage | V SD | - | 0.7 | 1.2 | V | V GS = 0V, I S = 1.5A |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | C iss | - | 1056 | 1400 | pF | V DS = 10V, V GS = 0V, f = 1.0MHz |
| Output Capacitance | C oss | - | 117 | 160 | pF | V DS = 10V, V GS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | C rss | - | 105 | 140 | pF | V DS = 10V, V GS = 0V, f = 1.0MHz |
| Gate Resistance | R g | - | 0.98 | 1.5 | Ω | V DS = 0V, V GS = 0V, f = 1MHz |
| Total Gate Charge (V GS = 4.5V) | Q g | - | 13.1 | 26.5 | nC | V DS = 10V, I D = 1.5A |
| Total Gate Charge (V GS = 8V) | Q g | - | 23.2 | 47 | nC | V DS = 10V, I D = 1.5A |
| Gate-Source Charge | Q gs | - | 1.4 | - | nC | V DS = 10V, I D = 1.5A |
| Gate-Drain Charge | Q gd | - | 2.1 | - | nC | V DS = 10V, I D = 1.5A |
| Reverse Recovery Charge | Q RR | - | 2.16 | 6 | nC | I F = 1.5A, di/dt = 100A/μs |
| Body Diode Reverse Recovery Time | t RR | - | 7.92 | 18 | ns | I F = 1.5A, di/dt = 100A/μs |
| Reverse Recovery Fall Time | t A | - | 6.5 | - | ns | I F = 1.5A, di/dt = 100A/μs |
| Reverse Recovery Rise Time | t B | - | 4.12 | - | ns | I F = 1.5A, di/dt = 100A/μs |
| Turn-On Delay Time | t D(ON) | - | 4.57 | 10 | ns | V DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω |
| Turn-On Rise Time | t R | - | 6.33 | 15 | ns | V DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω |
| Turn-Off Delay Time | t D(OFF) | - | 19.84 | 42 | ns | V DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω |
| Turn-Off Fall Time | t F | - | 2.96 | 6 | ns | V DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω |
| Turn-On Delay Time | t D(ON) | - | 2.88 | 6 | ns | V DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω |
| Turn-On Rise Time | t R | - | 6.31 | 14 | ns | V DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω |
| Turn-Off Delay Time | t D(OFF) | - | 14.9 | 30 | ns | V DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω |
| Turn-Off Fall Time | t F | - | 1.71 | 4 | ns | V DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω |
Notes:
-
Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
-
Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
-
Short duration pulse test used to minimize self-heating effect.
-
Guaranteed by design. Not subject to production testing.
Absolute Maximum Ratings
| Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | V DSS | 20 | V |
| Gate-Source Voltage | Gate-Source Voltage | V GSS | 8 | V |
| Continuous Source Current @VGS = 4.5V, t=10s (Note 5) | T A = +25° C T A = +70° C | I D | 3.3 2.6 | A |
| Continuous Source Current @VGS = 4.5V, t=10s (Note 6) | T A = +25° C T A = +70° C | I D | 4.5 3.6 | A |
| Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%) | Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%) | I DM | 16 | A |
| Continuous Source-Drain Diode Current | Continuous Source-Drain Diode Current | I S | 1.2 | A |
| Pulse Diode Forward Current | Pulse Diode Forward Current | I SM | 10 | A |
Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Total Power Dissipation (Note 5) | P D | 0.72 | W |
| Thermal Resistance, Junction to Ambient (Note 5) | R θJA | 175 | ° C/W |
| Thermal Resistance, Junction to Case (Note 5) | R θJC | 40 | ° C/W |
| Total Power Dissipation (Note 6) | P D | 1.18 | W |
| Thermal Resistance, Junction to Ambient (Note 6) | R θJA | 106 | ° C/W |
| Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
Package Information
- Case: U-WLB1010-4 (Type B)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal: Finish -SnAgCu. Solderable per MIL-STD-202 Method 208
- Terminal Connections: See Diagram
NEW PRODUCT
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMN2044UCB4 | Diodes Inc. | — |
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Get structured datasheet data via API
Get started free