DMN2044UCB4
N-Channel Enhancement Mode MOSFETThe DMN2044UCB4 is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMN2044UCB4 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
DMN2044UCB4 shares its datasheet with DMN2044UCB4-7, whose page lists every part number it covers.
Official DMN2044UCB4 datasheet (PDF) — the source this page was extracted from.
DMN2044UCB4 Key Specifications
| Parameter | Value |
|---|---|
| Package Dimensions | 1.05mm x 1.05mm typ, 0.5mm pitch |
| RDS(ON) @ VGS=1.5V | 70mΩ max (43mΩ typ) |
| RDS(ON) @ VGS=1.8V | 56mΩ max (36mΩ typ) |
| RDS(ON) @ VGS=2.5V | 50mΩ max (32mΩ typ) |
| RDS(ON) @ VGS=4.5V | 40mΩ max (29mΩ typ) |
| Input Capacitance (Ciss) | 1056pF typ |
| Gate-Source Voltage (VGSS) | ±8V |
| Pulsed Drain Current (IDM) | 16A |
| Drain-Source Voltage (VDSS) | 20V |
| Operating Temperature Range | -55°C to +150°C |
| Power Dissipation (Min Pad) | 0.72W |
| Total Gate Charge (VGS=4.5V) | 13.1nC typ |
| Power Dissipation (1 Inch² Cu) | 1.18W |
| Gate Threshold Voltage (VGS(TH)) | 0.4V to 0.9V |
| Thermal Resistance Junction-To-Ambient | 175°C/W (min pad); 106°C/W (1 inch² Cu) |
| Continuous Drain Current (TA=+25°C, Min Pad, T=10s) | 3.3A |
| Continuous Drain Current (TA=+25°C, 1 Inch² Cu, T=10s) | 4.5A |
DMN2044UCB4 Overview
Part: DMN2044UCB4 — Diodes Incorporated
Type: N-Channel Enhancement Mode MOSFET
Description: 20 V, 4.5 A N-channel MOSFET with RDS(ON) down to 40 mΩ in an ultra-small 1.0 mm × 1.0 mm wafer-level package.
Operating Conditions:
- Operating temperature: -55 to +150 °C
Absolute Maximum Ratings:
- Max supply voltage: Drain-Source Voltage (VDSS) = 20 V, Gate-Source Voltage (VGSS) = 8 V
- Max continuous current: 4.5 A (TA = +25 °C, VGS = 4.5 V, t = 10 s, Note 6)
- Max junction/storage temperature: -55 to +150 °C
Key Specs:
- Drain-Source Breakdown Voltage: 20 V min (VGS = 0 V, ID = 250 μA)
- Gate Threshold Voltage (VGS(TH)): 0.4 V min, 0.9 V max (VDS = VGS, ID = 250 μA)
- Static Drain-Source On-Resistance (RDS(ON)): 40 mΩ max (VGS = 4.5 V, ID = 1.5 A)
- Static Drain-Source On-Resistance (RDS(ON)): 50 mΩ max (VGS = 2.5 V, ID = 1.0 A)
- Static Drain-Source On-Resistance (RDS(ON)): 56 mΩ max (VGS = 1.8 V, ID = 1.0 A)
- Static Drain-Source On-Resistance (RDS(ON)): 70 mΩ max (VGS = 1.5 V, ID = 0.5 A)
- Input Capacitance (Ciss): 1056 pF typ, 1400 pF max (VDS = 10 V, VGS = 0 V, f = 1.0 MHz)
- Total Gate Charge (Qg): 13.1 nC typ, 26.5 nC max (VDS = 10 V, ID = 1.5 A, VGS = 4.5 V)
Features:
- Ultra-small 1.0 mm × 1.0 mm package
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free, "green" device
Applications:
- Portable applications
- Load switch
- Power management functions
Package:
- U-WLB1010-4 (Type B) (4-bump wafer-level chip-scale package, 1.05 mm × 1.05 mm typ)
DMN2044UCB4 Features
- Ultra Small 1.0mm x 1.0mm Package
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
DMN2044UCB4 Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a high performance MOSFET in ultra-small 1.0mm x 1.0mm package.
- Portable Applications
- Load Switch
- Power Management Functions
DMN2044UCB4 Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 20 | - | - | V | V GS = 0V, I D = 250μA |
| Zero Gate Voltage Drain Current | I | - | - | 1.0 | μA | V DS = 20V, V GS = 0V |
| DSS | - | - | 1.0 | mA | V DS = 20V, V GS = 0V , T J = +150° C | |
| Gate-Body Leakage | I GSS | - | - | 100 | nA | V GS = 8V, V DS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | V GS(TH) | 0.4 | - | 0.9 | V | V DS = V GS , I D = 250μA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 29 32 36 43 | 40 50 56 70 | mΩ | V GS = 4.5V, I D = 1.5A V GS = 2.5V, I D = 1.0A V GS = 1.8V, I D = 1.0A V GS = 1.5V, I D = 0.5A |
| Body Diode Forward Voltage | V SD | - | 0.7 | 1.2 | V | V GS = 0V, I S = 1.5A |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | C iss | - | 1056 | 1400 | pF | V DS = 10V, V GS = 0V, f = 1.0MHz |
| Output Capacitance | C oss | - | 117 | 160 | pF | V DS = 10V, V GS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | C rss | - | 105 | 140 | pF | V DS = 10V, V GS = 0V, f = 1.0MHz |
| Gate Resistance | R g | - | 0.98 | 1.5 | Ω | V DS = 0V, V GS = 0V, f = 1MHz |
| Total Gate Charge (V GS = 4.5V) | Q g | - | 13.1 | 26.5 | nC | V DS = 10V, I D = 1.5A |
| Total Gate Charge (V GS = 8V) | Q g | - | 23.2 | 47 | nC | V DS = 10V, I D = 1.5A |
| Gate-Source Charge | Q gs | - | 1.4 | - | nC | V DS = 10V, I D = 1.5A |
| Gate-Drain Charge | Q gd | - | 2.1 | - | nC | V DS = 10V, I D = 1.5A |
| Reverse Recovery Charge | Q RR | - | 2.16 | 6 | nC | I F = 1.5A, di/dt = 100A/μs |
| Body Diode Reverse Recovery Time | t RR | - | 7.92 | 18 | ns | I F = 1.5A, di/dt = 100A/μs |
| Reverse Recovery Fall Time | t A | - | 6.5 | - | ns | I F = 1.5A, di/dt = 100A/μs |
| Reverse Recovery Rise Time | t B | - | 4.12 | - | ns | I F = 1.5A, di/dt = 100A/μs |
| Turn-On Delay Time | t D(ON) | - | 4.57 | 10 | ns | V DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω |
| Turn-On Rise Time | t R | - | 6.33 | 15 | ns | V DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω |
| Turn-Off Delay Time | t D(OFF) | - | 19.84 | 42 | ns | V DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω |
| Turn-Off Fall Time | t F | - | 2.96 | 6 | ns | V DD = 10V, I D = 1.5A V GEN = 4.5V, R G = 1Ω, R L = 6.7Ω |
| Turn-On Delay Time | t D(ON) | - | 2.88 | 6 | ns | V DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω |
| Turn-On Rise Time | t R | - | 6.31 | 14 | ns | V DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω |
| Turn-Off Delay Time | t D(OFF) | - | 14.9 | 30 | ns | V DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω |
| Turn-Off Fall Time | t F | - | 1.71 | 4 | ns | V DD = 10V, I D = 1.5A V GEN = 8V, R G = 1Ω, R L = 6.7Ω |
Notes:
-
Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
-
Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
-
Short duration pulse test used to minimize self-heating effect.
-
Guaranteed by design. Not subject to production testing.
DMN2044UCB4 Absolute Maximum Ratings
| Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | V DSS | 20 | V |
| Gate-Source Voltage | Gate-Source Voltage | V GSS | 8 | V |
| Continuous Source Current @VGS = 4.5V, t=10s (Note 5) | T A = +25° C T A = +70° C | I D | 3.3 2.6 | A |
| Continuous Source Current @VGS = 4.5V, t=10s (Note 6) | T A = +25° C T A = +70° C | I D | 4.5 3.6 | A |
| Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%) | Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%) | I DM | 16 | A |
| Continuous Source-Drain Diode Current | Continuous Source-Drain Diode Current | I S | 1.2 | A |
| Pulse Diode Forward Current | Pulse Diode Forward Current | I SM | 10 | A |
DMN2044UCB4 Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Total Power Dissipation (Note 5) | P D | 0.72 | W |
| Thermal Resistance, Junction to Ambient (Note 5) | R θJA | 175 | ° C/W |
| Thermal Resistance, Junction to Case (Note 5) | R θJC | 40 | ° C/W |
| Total Power Dissipation (Note 6) | P D | 1.18 | W |
| Thermal Resistance, Junction to Ambient (Note 6) | R θJA | 106 | ° C/W |
| Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
DMN2044UCB4 Package Information
- Case: U-WLB1010-4 (Type B)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal: Finish -SnAgCu. Solderable per MIL-STD-202 Method 208
- Terminal Connections: See Diagram
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Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMN2044UCB4-7 | Diodes Incorporated | 4-UFBGA, WLBGA |
Other MOSFETs
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- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
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- 2N7002 – Nexperia, N-channel Trench MOSFET
- ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET
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