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IRLML6344TRPBF

HEXFET-Power MOSFET

The IRLML6344TRPBF is a hexfet-power mosfet from Infineon Technologies. View the full IRLML6344TRPBF datasheet below including key specifications, absolute maximum ratings.

Manufacturer

Infineon Technologies

Package

TO-236-3, SC-59, SOT-23-3

Lifecycle

Active

Key Specifications

ParameterValue
Continuous Drain Current5A (Ta)
Drain-Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
FET TypeN-Channel
Gate Charge (Qg)6.8 nC @ 4.5 V
Input Capacitance (Ciss)650 pF @ 25 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseTO-236-3, SC-59, SOT-23-3
PackagingMouseReel
PackagingMouseReel
Power Dissipation (Max)1.3W (Ta)
Rds(on)29mOhm @ 5A, 4.5V Ω
Standard Pack Qty3000
Standard Pack Qty3000
Supplier Device PackageMicro3™/SOT-23
Supplier Device PackageMicro3™/SOT-23
Supplier Device PackageMicro3™/SOT-23
Diode TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Gate Threshold Voltage1.1V @ 10µA

Overview

Part: IRLML6344TRPbF from International Rectifier

Type: HEXFET Power MOSFET

Description: 30 V, 5.0 A HEXFET Power MOSFET with a maximum on-resistance of 29 mΩ at VGS = 4.5V, packaged in an industry-standard SOT-23.

Operating Conditions:

  • Supply voltage: 30 V (Drain-Source Voltage)
  • Operating temperature: -55 to +150 °C (Junction and Storage Temperature Range)
  • Gate-to-Source Voltage: ±12 V

Absolute Maximum Ratings:

  • Max supply voltage: 30 V (Drain-Source Voltage)
  • Max continuous current: 5.0 A (Continuous Drain Current at TA = 25°C, VGS @10V)
  • Max junction/storage temperature: +150 °C

Key Specs:

  • Drain-to-Source Breakdown Voltage (V(BR)DSS): 30 V (min) at VGS = 0V, ID = 250 μA
  • Static Drain-to-Source On-Resistance (RDS(on)): 29 mΩ (max) at VGS = 4.5V, ID = 5.0A
  • Gate Threshold Voltage (VGS(th)): 0.5 V (min), 1.1 V (max) at VDS = VGS, ID = 10 μA
  • Drain-to-Source Leakage Current (IDSS): 1.0 μA (max) at VDS = 24V, VGS = 0V
  • Total Gate Charge (Qg): 6.8 nC (typ) at ID = 5.0A, VDS = 15V, VGS = 4.5V
  • Forward Transconductance (gfs): 19 S (min) at VDS = 10V, ID = 5.0A
  • Input Capacitance (Ciss): 650 pF (typ) at VGS = 0V, VDS = 25V, ƒ = 1.0MHz
  • Diode Forward Voltage (VSD): 1.2 V (max) at TJ = 25°C, IS = 5.0A, VGS = 0V

Features:

  • Low RDSon (<29m Ω)
  • Industry-standard SOT-23 Package
  • RoHS compliant containing no lead, no bromide and no halogen
  • MSL1, Consumer Qualification

Applications:

  • Load/ System Switch

Package:

  • Micro3 (SOT-23)

Features

  • Industry-standard SOT-23 Package
  • RoHS compliant containing no lead, no bromide and no halogen
  • MSL1, Consumer Qualification

Absolute Maximum Ratings

SymbolParameterMax.Units
V DSDrain-Source Voltage30V
I D @T A = 25°CContinuous Drain Current, V GS @10V5.0A
I D @T A = 70°CContinuous Drain Current, V GS @10V4.0A
I DMPulsed Drain Current25A
P D @T A = 25°CMaximum Power Dissipation1.3W
P D @T A = 70°CMaximum Power Dissipation0.8W
Linear Derating Factor0.01W/°C
V GSGate-to-Source Voltage± 12V
T J, T STGJunction and Storage Temperature Range-55 to + 150°C

Thermal Information

SymbolParameterTyp.Max.Units
R θ JAJunction-to-Ambient---100°C/W
R θ JAJunction-to-Ambient (t<10s)---99°C/W

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

/c101

/c102

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