IRLML6344TRPBF
HEXFET-Power MOSFETThe IRLML6344TRPBF is a hexfet-power mosfet from Infineon Technologies. View the full IRLML6344TRPBF datasheet below including key specifications, absolute maximum ratings.
Manufacturer
Infineon Technologies
Category
Discrete SemiconductorsPackage
TO-236-3, SC-59, SOT-23-3
Lifecycle
Active
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 5A (Ta) |
| Drain-Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 6.8 nC @ 4.5 V |
| Input Capacitance (Ciss) | 650 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | MouseReel |
| Packaging | MouseReel |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds(on) | 29mOhm @ 5A, 4.5V Ω |
| Standard Pack Qty | 3000 |
| Standard Pack Qty | 3000 |
| Supplier Device Package | Micro3™/SOT-23 |
| Supplier Device Package | Micro3™/SOT-23 |
| Supplier Device Package | Micro3™/SOT-23 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Gate Threshold Voltage | 1.1V @ 10µA |
Overview
Part: IRLML6344TRPbF from International Rectifier
Type: HEXFET Power MOSFET
Description: 30 V, 5.0 A HEXFET Power MOSFET with a maximum on-resistance of 29 mΩ at VGS = 4.5V, packaged in an industry-standard SOT-23.
Operating Conditions:
- Supply voltage: 30 V (Drain-Source Voltage)
- Operating temperature: -55 to +150 °C (Junction and Storage Temperature Range)
- Gate-to-Source Voltage: ±12 V
Absolute Maximum Ratings:
- Max supply voltage: 30 V (Drain-Source Voltage)
- Max continuous current: 5.0 A (Continuous Drain Current at TA = 25°C, VGS @10V)
- Max junction/storage temperature: +150 °C
Key Specs:
- Drain-to-Source Breakdown Voltage (V(BR)DSS): 30 V (min) at VGS = 0V, ID = 250 μA
- Static Drain-to-Source On-Resistance (RDS(on)): 29 mΩ (max) at VGS = 4.5V, ID = 5.0A
- Gate Threshold Voltage (VGS(th)): 0.5 V (min), 1.1 V (max) at VDS = VGS, ID = 10 μA
- Drain-to-Source Leakage Current (IDSS): 1.0 μA (max) at VDS = 24V, VGS = 0V
- Total Gate Charge (Qg): 6.8 nC (typ) at ID = 5.0A, VDS = 15V, VGS = 4.5V
- Forward Transconductance (gfs): 19 S (min) at VDS = 10V, ID = 5.0A
- Input Capacitance (Ciss): 650 pF (typ) at VGS = 0V, VDS = 25V, ƒ = 1.0MHz
- Diode Forward Voltage (VSD): 1.2 V (max) at TJ = 25°C, IS = 5.0A, VGS = 0V
Features:
- Low RDSon (<29m Ω)
- Industry-standard SOT-23 Package
- RoHS compliant containing no lead, no bromide and no halogen
- MSL1, Consumer Qualification
Applications:
- Load/ System Switch
Package:
- Micro3 (SOT-23)
Features
- Industry-standard SOT-23 Package
- RoHS compliant containing no lead, no bromide and no halogen
- MSL1, Consumer Qualification
Absolute Maximum Ratings
| Symbol | Parameter | Max. | Units |
|---|---|---|---|
| V DS | Drain-Source Voltage | 30 | V |
| I D @T A = 25°C | Continuous Drain Current, V GS @10V | 5.0 | A |
| I D @T A = 70°C | Continuous Drain Current, V GS @10V | 4.0 | A |
| I DM | Pulsed Drain Current | 25 | A |
| P D @T A = 25°C | Maximum Power Dissipation | 1.3 | W |
| P D @T A = 70°C | Maximum Power Dissipation | 0.8 | W |
| Linear Derating Factor | 0.01 | W/°C | |
| V GS | Gate-to-Source Voltage | ± 12 | V |
| T J, T STG | Junction and Storage Temperature Range | -55 to + 150 | °C |
Thermal Information
| Symbol | Parameter | Typ. | Max. | Units |
|---|---|---|---|---|
| R θ JA | Junction-to-Ambient | --- | 100 | °C/W |
| R θ JA | Junction-to-Ambient (t<10s) | --- | 99 | °C/W |
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
/c101
/c102
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The following components are covered by the same datasheet.
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|---|---|---|
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