IRLML6344TRPBF

HEXFET-Power MOSFET

The IRLML6344TRPBF is a hexfet-power mosfet from Infineon Technologies. View the full IRLML6344TRPBF datasheet below including key specifications, absolute maximum ratings.

IRLML6344TRPBF shares its datasheet with IRLML6344, whose page lists every part number it covers.

Official IRLML6344TRPBF datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

IRLML6344TRPBF Key Specifications

Parameter	Value
Continuous Drain Current	5A (Ta)
Drain-Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
FET Type	N-Channel
Gate Charge (Qg)	6.8 nC @ 4.5 V
Input Capacitance (Ciss)	650 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	MouseReel
Power Dissipation (Max)	1.3W (Ta)
Rds(on)	29mOhm @ 5A, 4.5V Ω
Standard Pack Qty	3000
Supplier Device Package	Micro3™/SOT-23
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Gate Threshold Voltage	1.1V @ 10µA

IRLML6344TRPBF Overview

Part: IRLML6344TRPbF — Infineon Technologies (International Rectifier)

Type: N-Channel HEXFET Power MOSFET

Description: 30 V, ±12 V VGS N-channel power MOSFET with RDS(on) max 29 mΩ at VGS = 4.5 V and 5.0 A continuous drain current in a SOT-23 (Micro3) package.

Operating Conditions:

Supply voltage: not applicable (VDS up to 30 V; VGS ±12 V max)
Operating temperature: -55 to +150 °C (junction)
Gate threshold voltage VGS(th): 0.5–1.1 V (VDS = VGS, ID = 10 μA)

Absolute Maximum Ratings:

Drain-source voltage VDS: 30 V
Gate-source voltage VGS: ±12 V
Continuous drain current ID: 5.0 A (TA = 25 °C), 4.0 A (TA = 70 °C)
Pulsed drain current IDM: 25 A
Power dissipation PD: 1.3 W (TA = 25 °C), 0.8 W (TA = 70 °C)
Junction and storage temperature: -55 to +150 °C

Key Specs:

RDS(on): 22 mΩ typ, 29 mΩ max (VGS = 4.5 V, ID = 5.0 A); 37 mΩ max at VGS = 2.5 V
V(BR)DSS: 30 V min (VGS = 0 V, ID = 250 μA)
VGS(th): 0.5 V min, 0.8 V typ, 1.1 V max (VDS = VGS, ID = 10 μA)
IDSS: 1.0 μA max (VDS = 24 V); 150 μA max at TJ = 125 °C
IGSS: ±100 nA max (VGS = ±12 V)
Total gate charge Qg: 6.8 nC typ (ID = 5.0 A, VDS = 15 V, VGS = 4.5 V)
Ciss / Coss / Crss: 650 / 65 / 46 pF typ (VDS = 25 V, f = 1 MHz)
Switching (VDD = 15 V, ID = 1.0 A, RG = 6.8 Ω): td(off) 22 ns typ, tf 9.1 ns typ
Body diode VSD: 1.2 V max (IS = 5.0 A); trr 10 ns typ
Thermal resistance RθJA: 100 °C/W max

Features:

Low RDS(on) (<29 mΩ)
Industry-standard SOT-23 package
RoHS compliant, lead-free, bromide-free and halogen-free
MSL1, consumer qualification

Applications:

Load / system switch

Package:

Micro3 (SOT-23), tape and reel, 3000 pieces per reel

IRLML6344TRPBF Features

Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification

IRLML6344TRPBF Absolute Maximum Ratings

Symbol	Parameter	Max.	Units
V DS	Drain-Source Voltage	30	V
I D @T A = 25°C	Continuous Drain Current, V GS @10V	5.0	A
I D @T A = 70°C	Continuous Drain Current, V GS @10V	4.0	A
I DM	Pulsed Drain Current	25	A
P D @T A = 25°C	Maximum Power Dissipation	1.3	W
P D @T A = 70°C	Maximum Power Dissipation	0.8	W
	Linear Derating Factor	0.01	W/°C
V GS	Gate-to-Source Voltage	± 12	V
T J, T STG	Junction and Storage Temperature Range	-55 to + 150	°C

IRLML6344TRPBF Thermal Information

Symbol	Parameter	Typ.	Max.	Units
R θ JA	Junction-to-Ambient	---	100	°C/W
R θ JA	Junction-to-Ambient (t<10s)	---	99	°C/W

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

/c101

/c102

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