DMP3099L-7

P-CHANNEL ENHANCEMENT MODE MOSFET

The DMP3099L-7 is a p-channel enhancement mode mosfet from Diodes Incorporated. View the full DMP3099L-7 datasheet below including pinout, electrical characteristics, absolute maximum ratings.

Manufacturer

Diodes Incorporated

Overview

Part: DMP3099L — Diodes Incorporated

Type: P-CHANNEL ENHANCEMENT MODE MOSFET

Description: This P-Channel Enhancement Mode MOSFET features a -30V Drain-Source Breakdown Voltage, a maximum on-state resistance of 65mΩ at VGS = -10V, and a continuous drain current of -3.8A at TA = +25°C, designed for high-efficiency power-management applications.

Operating Conditions:

Supply voltage: Up to -30V (Drain-Source)
Operating temperature: -55 to +150 °C (Junction and Storage)
Gate-Source voltage: ±20V

Absolute Maximum Ratings:

Max Drain-Source Voltage: -30 V
Max Gate-Source Voltage: ±20 V
Max continuous Drain Current (TA = +25°C): -3.8 A
Max pulsed Drain Current: -11 A
Max Junction/Storage Temperature: +150 °C

Key Specs:

Drain-Source Breakdown Voltage (BV_DSS): -30 V (V_GS = 0V, I_D = -250μA)
Zero Gate Voltage Drain Current (I_DSS): -800 nA (V_DS = -30V, V_GS = 0V)
Gate Threshold Voltage (V_GS(th)): -1.0 to -2.1 V (V_DS = V_GS, I_D = -250μA)
Static Drain-Source On-Resistance (R_DS(ON)): 65 mΩ (V_GS = -10V, I_D = -3.8A)
Static Drain-Source On-Resistance (R_DS(ON)): 99 mΩ (V_GS = -4.5V, I_D = -3.0A)
Input Capacitance (C_iss): 563 pF (V_DS = -25V, V_GS = 0V, f = 1.0MHz)
Total Gate Charge (Q_g): 11 nC (V_DS = -15V, V_GS = -10V, I_D = -3.8A)
Turn-On Delay Time (t_d(on)): 4.8 ns (V_DS = -15V, V_GS = -10V, I_D = -1A, R_G = 6.0Ω)

Features:

Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. 'Green' Device

Applications:

Backlighting
Power-management functions
DC-DC converters

Package:

SOT23 (Standard)

Features

Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. 'Green' Device (Note 3)
An automotive-compliant part is available under a separate datasheet (DMP3099LQ)

Applications

Backlighting
Power-management functions
DC-DC converters

SOT23 (Standard)

Top View

Pin Configuration

DMP3099L-7 Pinout

Package: SOT-23

Pin Number	Pin Name	Type	Description
1	G	I	Gate
2	S	S	Source
3	D	O	Drain

Notes

P-channel enhancement mode MOSFET with low RDS(ON) (65 mΩ @ VGS = -10V, ID = -3.8A)
Maximum ratings: VDS = -30V, ID = -3.8A (TA = +25°C)
SOT-23 package: 3-pin surface-mount device
Pin diagram shows standard SOT-23 orientation with Gate (top center), Source (bottom left), and Drain (bottom right)

Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage	BV DSS	-30	-	-	V	V GS = 0V, I D = -250μA
Zero Gate Voltage Drain Current	I DSS	-	-	-800	nA	V DS = -30V, V GS = 0V
Gate-Source Leakage	I GSS	-	-	±100	nA	V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage	V GS(th)	-1.0	-	-2.1	V	V DS = V GS , I D = -250μA
Static Drain-Source On-Resistance	R DS(ON)	-	-	65 99	mΩ	V GS = -10V, I D = -3.8A V GS = -4.5V, I D = -3.0A
Forward Transfer Admittance	\	Y fs \		-	3.6	-
Diode Forward Voltage (Note 6)	V SD	-	-	-1.26	V	V GS = 0V, I S = -2.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance	C iss	-	563	-	pF	V DS = -25V, V GS = 0V, f = 1.0MHz
Output Capacitance	C oss	-	48	-	pF	V DS = -25V, V GS = 0V, f = 1.0MHz
Reverse Transfer Capacitance	C rss	-	41	-	pF	V DS = -25V, V GS = 0V, f = 1.0MHz
Gate Resistance	R G	-	10.3	-	Ω	V GS = 0V, V DS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge	Qg	-	5.2	-	nC	V DS = -15V, V GS = -4.5V, I D = -3.8A
Total Gate Charge	Qg	-	11	-	nC	V DS = -15V, V GS = -10V, I D = -3.8A
Gate-Source Charge	Qgs	-	1.7	-	nC	V DS = -15V, V GS = -10V, I D = -3.8A
Gate-Drain Charge	Qgd	-	1.9	-	nC	V DS = -15V, V GS = -10V, I D = -3.8A
Turn-On Delay Time	t d(on)	-	4.8	-	ns	V DS = -15V, V GS = -10V, I D = -1A, R G = 6.0Ω
Rise Time	t r	-	5.0	-	ns	V DS = -15V, V GS = -10V, I D = -1A, R G = 6.0Ω
Turn-Off Delay Time	t d(off)	-	31	-	ns	V DS = -15V, V GS = -10V, I D = -1A, R G = 6.0Ω
Fall Time	t f	-	15	-	ns	V DS = -15V, V GS = -10V, I D = -1A, R G = 6.0Ω

Absolute Maximum Ratings

Characteristic	Characteristic	Characteristic	Symbol	Value	Unit
Drain-Source Voltage	Drain-Source Voltage	Drain-Source Voltage	V DSS	-30	V
Gate-Source Voltage	Gate-Source Voltage	Gate-Source Voltage	V GSS	±20	V
Drain Current (Note 5) V GS = -10V	Steady State	T A = +25° C T A = +70° C	I D	-3.8 -2.9	A
Pulsed Drain Current (Note 6)	Pulsed Drain Current (Note 6)	Pulsed Drain Current (Note 6)	I DM	-11	A

Thermal Information

Characteristic	Symbol	Value	Unit
Total Power Dissipation (Note 5)	P D	1.08	W
Thermal Resistance, Junction to Ambient @TA = +25° C (Note 5)	R θJA	115	° C/W
Operating and Storage Temperature Range	T J, T STG	-55 to +150	° C

Package Information

Package: SOT23
Package Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)

Equivalent Circuit

Top View Pin Configuration

D99 = Product Type Marking Code

YM = Date Code Marking Y = Year (ex: M = 2025) M = Month (ex: 9 = September)

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
DMP3099L	Diodes Incorporated	—
DMP3099L-13	Diodes Incorporated	—
DMP3099LQ	Diodes Incorporated	—

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