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DMP3099L-7

P-CHANNEL ENHANCEMENT MODE MOSFET

The DMP3099L-7 is a p-channel enhancement mode mosfet from Diodes Incorporated. View the full DMP3099L-7 datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.

Official DMP3099L-7 datasheet (PDF) — the source this page was extracted from.

Category

MOSFETs

Package

SOT23

DMP3099L-7 Key Specifications

ParameterValue
Packing3000 units, Tape & Reel
Input Capacitance (Ciss)563pF typ
Gate-Source Voltage (VGSS)±20V
Pulsed Drain Current (IDM)-11A
Drain-Source Voltage (VDSS)-30V
Total Power Dissipation (PD)1.08W
RDS(ON) At VGS=-10V, ID=-3.8A65mΩ max
RDS(ON) At VGS=-4.5V, ID=-3.0A99mΩ max
Gate Threshold Voltage (VGS(Th))-1.0V to -2.1V
Total Gate Charge (Qg, VGS=-10V)11nC typ
Zero Gate Voltage Drain Current (IDSS)-800nA max
Operating And Storage Temperature Range-55°C to +150°C
Thermal Resistance Junction-To-Ambient (RθJA)115°C/W
Continuous Drain Current (ID, TA=+25°C, VGS=-10V)-3.8A
Continuous Drain Current (ID, TA=+70°C, VGS=-10V)-2.9A

DMP3099L-7 Overview

Part: DMP3099L — Diodes Incorporated

Type: P-CHANNEL ENHANCEMENT MODE MOSFET

Description: This P-Channel Enhancement Mode MOSFET features a -30V Drain-Source Breakdown Voltage, a maximum on-state resistance of 65mΩ at VGS = -10V, and a continuous drain current of -3.8A at TA = +25°C, designed for high-efficiency power-management applications.

Operating Conditions:

  • Supply voltage: Up to -30V (Drain-Source)
  • Operating temperature: -55 to +150 °C (Junction and Storage)
  • Gate-Source voltage: ±20V

Absolute Maximum Ratings:

  • Max Drain-Source Voltage: -30 V
  • Max Gate-Source Voltage: ±20 V
  • Max continuous Drain Current (TA = +25°C): -3.8 A
  • Max pulsed Drain Current: -11 A
  • Max Junction/Storage Temperature: +150 °C

Key Specs:

  • Drain-Source Breakdown Voltage (BV_DSS): -30 V (V_GS = 0V, I_D = -250μA)
  • Zero Gate Voltage Drain Current (I_DSS): -800 nA (V_DS = -30V, V_GS = 0V)
  • Gate Threshold Voltage (V_GS(th)): -1.0 to -2.1 V (V_DS = V_GS, I_D = -250μA)
  • Static Drain-Source On-Resistance (R_DS(ON)): 65 mΩ (V_GS = -10V, I_D = -3.8A)
  • Static Drain-Source On-Resistance (R_DS(ON)): 99 mΩ (V_GS = -4.5V, I_D = -3.0A)
  • Input Capacitance (C_iss): 563 pF (V_DS = -25V, V_GS = 0V, f = 1.0MHz)
  • Total Gate Charge (Q_g): 11 nC (V_DS = -15V, V_GS = -10V, I_D = -3.8A)
  • Turn-On Delay Time (t_d(on)): 4.8 ns (V_DS = -15V, V_GS = -10V, I_D = -1A, R_G = 6.0Ω)

Features:

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. 'Green' Device

Applications:

  • Backlighting
  • Power-management functions
  • DC-DC converters

Package:

  • SOT23 (Standard)

DMP3099L-7 Features

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. 'Green' Device (Note 3)
  • An automotive-compliant part is available under a separate datasheet (DMP3099LQ)

DMP3099L-7 Applications

  • Backlighting
  • Power-management functions
  • DC-DC converters

SOT23 (Standard)

Top View

DMP3099L-7 Pin Configuration

DMP3099L-7 Pinout

Package: SOT-23

Pin NumberPin NameTypeDescription
1GateIGate terminal
2SourceSSource terminal
3DrainODrain terminal

Notes

  • DMP3099L-7 is a P-channel enhancement-mode MOSFET in SOT-23 package.
  • Pin numbers derived from standard SOT-23 top-view orientation: Pin 1 (left), Pin 2 (bottom center), Pin 3 (right).
  • The equivalent circuit diagram confirms Gate, Source, and Drain as the three functional terminals.
  • Maximum ratings: V_DSS = -30V, I_D = -3.8A @ V_GS = -10V, R_DS(ON) = 65mΩ typical.

DMP3099L-7 Electrical Characteristics

CharacteristicSymbolMinTypMaxUnitTest Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown VoltageBV DSS-30--VV GS = 0V, I D = -250μA
Zero Gate Voltage Drain CurrentI DSS---800nAV DS = -30V, V GS = 0V
Gate-Source LeakageI GSS--±100nAV GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold VoltageV GS(th)-1.0--2.1VV DS = V GS , I D = -250μA
Static Drain-Source On-ResistanceR DS(ON)--65 99mΩV GS = -10V, I D = -3.8A V GS = -4.5V, I D = -3.0A
Forward Transfer Admittance\Y fs \-3.6-
Diode Forward Voltage (Note 6)V SD---1.26VV GS = 0V, I S = -2.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input CapacitanceC iss-563-pFV DS = -25V, V GS = 0V, f = 1.0MHz
Output CapacitanceC oss-48-pFV DS = -25V, V GS = 0V, f = 1.0MHz
Reverse Transfer CapacitanceC rss-41-pFV DS = -25V, V GS = 0V, f = 1.0MHz
Gate ResistanceR G-10.3-ΩV GS = 0V, V DS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate ChargeQg-5.2-nCV DS = -15V, V GS = -4.5V, I D = -3.8A
Total Gate ChargeQg-11-nCV DS = -15V, V GS = -10V, I D = -3.8A
Gate-Source ChargeQgs-1.7-nCV DS = -15V, V GS = -10V, I D = -3.8A
Gate-Drain ChargeQgd-1.9-nCV DS = -15V, V GS = -10V, I D = -3.8A
Turn-On Delay Timet d(on)-4.8-nsV DS = -15V, V GS = -10V, I D = -1A, R G = 6.0Ω
Rise Timet r-5.0-nsV DS = -15V, V GS = -10V, I D = -1A, R G = 6.0Ω
Turn-Off Delay Timet d(off)-31-nsV DS = -15V, V GS = -10V, I D = -1A, R G = 6.0Ω
Fall Timet f-15-nsV DS = -15V, V GS = -10V, I D = -1A, R G = 6.0Ω

DMP3099L-7 Absolute Maximum Ratings

CharacteristicCharacteristicCharacteristicSymbolValueUnit
Drain-Source VoltageDrain-Source VoltageDrain-Source VoltageV DSS-30V
Gate-Source VoltageGate-Source VoltageGate-Source VoltageV GSS±20V
Drain Current (Note 5) V GS = -10VSteady StateT A = +25° C T A = +70° CI D-3.8 -2.9A
Pulsed Drain Current (Note 6)Pulsed Drain Current (Note 6)Pulsed Drain Current (Note 6)I DM-11A

DMP3099L-7 Thermal Information

CharacteristicSymbolValueUnit
Total Power Dissipation (Note 5)P D1.08W
Thermal Resistance, Junction to Ambient @TA = +25° C (Note 5)R θJA115° C/W
Operating and Storage Temperature RangeT J, T STG-55 to +150° C

DMP3099L-7 Package Information

  • Package: SOT23
  • Package Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish ⎯ Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3
  • Terminal Connections: See Diagram
  • Weight: 0.008 grams (Approximate)

Equivalent Circuit

Top View Pin Configuration

D99 = Product Type Marking Code

YM = Date Code Marking Y = Year (ex: M = 2025) M = Month (ex: 9 = September)

More part numbers on this datasheet

Their pages show this same datasheet. Some are linked through their part family rather than checked part by part, so confirm the exact part in the ordering information.

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All MOSFETs datasheetsAll Diodes datasheets (217)

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