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STL110N10F7

N-channel Power MOSFET

The STL110N10F7 is a n-channel power mosfet from STMicroelectronics. View the full STL110N10F7 datasheet below including key specifications, electrical characteristics.

Official STL110N10F7 datasheet (PDF) — the source this page was extracted from.

Manufacturer

STMicroelectronics

Category

MOSFETs

Package

PowerFLAT-8(5x6)

Lifecycle

Production (Last Updated: 5 months ago)

STL110N10F7 Key Specifications

ParameterValue
China RoHSNon-Compliant
Continuous Drain Current (ID)75 A
Drain to Source Resistance6 mΩ
Drain-Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)20 V
Height950 µm
Input Capacitance5.117 nF
Introduction Date2012-12-03
Lead FreeLead Free
Length5.4 mm
Lifecycle StatusProduction (Last Updated: 5 months ago)
Max Operating Temperature175 °C
Max Power Dissipation5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
MountSurface Mount
Number of Elements1
Number of Pins8
Number of Terminals5
PackagingTape and Reel
Power Dissipation5 W
Rds On Max6 mΩ
REACH SVHCAffected
Resistance6 mΩ
Rise Time36 ns
RoHSCompliant
Schedule B8541290080
Turn-Off Delay Time52 ns
Turn-On Delay Time25 ns
Width6.35 mm

STL110N10F7 Overview

Part: STL110N10F7 — STMicroelectronics

Type: N-channel Power MOSFET

Description: 100 V, 107 A N-channel STripFET H7 power MOSFET featuring 0.005 Ω typical on-resistance in a PowerFLAT 5x6 package.

Operating Conditions:

  • Operating junction temperature: -55 to 175 °C

Absolute Maximum Ratings:

  • Max drain-source voltage: 100 V
  • Gate-source voltage: ±20 V
  • Max continuous drain current: 107 A (at TC = 25 °C)
  • Drain current (pulsed): 84 A
  • Total dissipation: 136 W (at TC = 25 °C)
  • Single pulse avalanche energy: 490 mJ (starting Tj = 25 °C, Id = 18 A, Vdd = 50 V)
  • Operating junction and storage temperature: -55 to 175 °C

Key Specs:

  • Drain-source breakdown voltage V(BR)DSS: 100 V min (VGS = 0, ID = 250 μA)
  • Gate threshold voltage VGS(th): 2.5 V min, 4.5 V max (VDS = VGS, ID = 250 μA)
  • Static drain-source on-resistance RDS(on): 0.005 Ω typ, 0.006 Ω max (VGS = 10 V, ID = 10 A)
  • Zero gate voltage drain current IDSS: 1 μA max (VGS = 0, VDS = 100 V)
  • Input capacitance Ciss: 5117 pF typ (VDS = 50 V, f = 1 MHz, VGS = 0)
  • Total gate charge Qg: 72 nC typ (VDD = 50 V, ID = 21 A, VGS = 10 V)
  • Turn-on delay time td(on): 25 ns typ (VDD = 50 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V)
  • Diode reverse recovery time trr: 77 ns typ (ISD = 21 A, di/dt = 100 A/μs, VDD = 80 V, Tj = 150 °C)

Features:

  • STripFET H7 technology with trench gate structure
  • Low RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness

Applications:

  • Switching applications

Package:

  • PowerFLAT 5x6 (type S-C)

STL110N10F7 Features

Order codeV DSR DS(on) maxI DP TOT
STL110N10F7100 V0.006 Ω (V GS = 10 V)107 A136W
  • Among the lowest R DS(on) on the market
  • Excellent figure of merit (FoM)
  • Low C rss /C iss ratio for EMI immunity
  • High avalanche ruggedness

STL110N10F7 Applications

  • Switching applications

STL110N10F7 Electrical Characteristics

(T CASE =25 °C unless otherwise specified)

Table 4. On/off states

SymbolParameterTest conditionsMin.Typ.Max.Unit
V (BR)DSSDrain-source breakdown voltageV GS = 0, I D = 250 μA100V
I DSSZero gate voltage drain currentV GS = 0, V DS = 100 V V GS = 0, V DS = 100 V,1 10μA μA
I GSSGate body leakage currentV DS = 0, V GS = 20 V100nA
V GS(th)Gate threshold voltageV DS = V GS , I D = 250 μA2.54.5V
R DS(on)Static drain-source on-resistanceV GS = 10 V, I D = 10 A0.0050.006Ω

Table 5. Dynamic

SymbolParameterTest conditionsMin.Typ.Max.Unit
C issInput capacitanceV DS = 50 V, f=1 MHz, V GS =0-5117-pF
C ossOutput capacitanceV DS = 50 V, f=1 MHz, V GS =0-992-pF
C rssReverse transfer capacitanceV DS = 50 V, f=1 MHz, V GS =0-39-pF
Q gTotal gate chargeV DD = 50 V, I D = 21 A V GS =10 V Figure 14-72-nC
Q gsGate-source chargeV DD = 50 V, I D = 21 A V GS =10 V Figure 14-30-nC
Q gdGate-drain chargeV DD = 50 V, I D = 21 A V GS =10 V Figure 14-17-nC

Table 6. Switching times

SymbolParameterTest conditionsMin.Typ.Max.Unit
t d(on)Turn-on delay timeV DD =50 V, I D = 10 A, R G =4.7 Ω , V GS = 10 V Figure 13-25-ns
t rRise timeV DD =50 V, I D = 10 A, R G =4.7 Ω , V GS = 10 V Figure 13-36-ns
t d(off)Turn-off delay timeV DD =50 V, I D = 10 A, R G =4.7 Ω , V GS = 10 V Figure 13-52-ns
t fFall timeV DD =50 V, I D = 10 A, R G =4.7 Ω , V GS = 10 V Figure 13-21-ns

Table 6. Switching times

Table 7. Source drain diode

Table 7. Source drain diode

SymbolParameterTest conditionsMin.Typ.Max.Unit
I SDSource-drain current-21A
I SDM (1)Source-drain current (pulsed)-84A
V SD (2)Forward on voltageV GS =0, I SD = 21 A-1.2V
t rrReverse recovery timeI SD = 21 A, di/dt = 100 A/μs, V DD =80 V, T j =150-77ns
Q rrReverse recovery chargeI SD = 21 A, di/dt = 100 A/μs, V DD =80 V, T j =150-150nC
I RRMReverse recovery current°C-4.3A

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STL110N10F7 Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com . ECOPACK ® is an ST trademark.

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Figure 19. PowerFLAT™ 5x6 type S-C mechanical data

Table 8. PowerFLAT™ 5x6 type S-C mechanical data

Dim.mmmmmm
Dim.Min.Typ.Max.
A0.801.00
A10.020.05
A20.25
b0.300.50
D5.20
D24.114.31
E6.15
e1.27
e10.65
E23.503.70
E32.352.55
E40.400.60
E50.080.28
K1.051.35
L0.7151.015

Figure 20. PowerFLAT™ 5x6 recommended footprint (dimensions in mm)

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Other MOSFETs

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  • 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
  • DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • 2N7002 – Nexperia, N-channel Trench MOSFET
  • 20N06L – onsemi, Power MOSFET

All MOSFETs datasheetsAll STMicroelectronics datasheets (808)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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