DMP3099L

Features and Benefits

Manufacturer

Diodes Incorporated

Overview

Part: DMP3099L (Diodes Incorporated)

Type: P-CHANNEL ENHANCEMENT MODE MOSFET

Key Specs:

  • Drain-Source Voltage (BVDSS): -30V
  • On-Resistance (RDS(ON) Max): 65mΩ @ VGS = -10V
  • Drain Current (ID Max): -3.8A @ TA = +25°C
  • Operating and Storage Temperature Range: -55 to +150 °C

Features:

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. "Green" Device
  • An automotive-compliant part is available (DMP3099LQ)

Applications:

  • Backlighting
  • Power-management functions
  • DC-DC converters

Package:

  • SOT23: dimensions not specified

Features

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. "Green" Device (Note 3)
  • An automotive-compliant part is available under a separate datasheet (DMP3099LQ)

Mechanical Data

  • Package: SOT23
  • Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish⎯Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3
  • Terminal Connections: See Diagram
  • Weight: 0.008 grams (Approximate)

Ordering Information (Note 4)

Packing
Orderable Part NumberPackageQty.
DMP3099L-7SOT23 (Standard)3000
DMP3099L-13SOT23 (Standard)10000

Applications

  • Backlighting
  • Power-management functions
  • DC-DC converters

Electrical Characteristics

CharacteristicSymbolMinTypMaxUnitTest Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown VoltageBVDSS-30-_٧VGS = 0V, ID = -250μ A
Zero Gate Voltage Drain CurrentIDSS__-800nAV DS = -30V, V GS = 0V
Gate-Source LeakageIgss__±100nAVGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold VoltageV GS(th)-1.01-2.1VVDS = VGS, ID = -250μ A
Static Drain-Source On-ResistanceDescent65Vgs = -10V, ID = -3.8A
Static Drain-Source On-ResistanceRDS(ON)__9911122VGS = -4.5V , ID = -3.0A
Forward Transfer AdmittanceY fs_3.6_SVDS = -5V , ID = -2.7A
Diode Forward Voltage (Note 6)V SD__-1.26VV GS = 0V, I S = -2.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input CapacitanceCiss_563_pF.,
Output CapacitanceCoss_48_pFVDS = -25V, VGS = 0V,
f = 1.0MHz
Reverse Transfer CapacitanceCrss_41_pF1 - 1.0WH2
Gate ResistanceRg_10.3_ΩVGS = 0V , VDS = 0V , $f = 1MHz$
SWITCHING CHARACTERISTICS (Note 8)
Total Gate ChargeQg_5.2_VDS = -15V , VGS = -4.5V , ID = -3.8A
-11_nC
Gate-Source ChargeQgs-1.7_V DS = -15V, V GS = -10V,
I D = -3.8A
Gate-Drain ChargeQ gd_1.9_
Turn-On Delay Timetd(on)_4.8_
Rise Timetr_5.0_V DS = -15V, V GS = -10V,
Turn-Off Delay Timetd(off)_31_nsID = -1A, RG = 6.0Ω
Fall Timet f_15_
    1. Pulse width ≤10μS, Duty Cycle ≤1%.
    1. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.

Figure 7 Gate Threshold Variation vs. Ambient Temperature

Absolute Maximum Ratings

CharacteristicSymbolValueUnit
Drain-Source VoltageVDSS-30V
Gate-Source VoltageVgss±20V
Drain Current (Note 5) VGS = -10V Steady TA = +25°C State TA = +70°Clo-3.8
-2.9
A
Pulsed Drain Current (Note 6)I DM-11Α

Thermal Information

CharacteristicSymbolValueUnit
Total Power Dissipation (Note 5)PD1.08W
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5)Reja115°C/W
Operating and Storage Temperature RangeTJ, TSTG-55 to +150°C

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
DMP3099L-13Diodes Incorporated
DMP3099L-7Diodes IncorporatedSOT-23
DMP3099LQDiodes Incorporated
DMP3099LQ.PDFDiodes Incorporated
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