SI2302
SOT-23 (TO-236)
Manufacturer
silabs
Overview
Part: Vishay Siliconix Si2302CDS
Type: N-Channel 20 V (D-S) MOSFET
Key Specs:
- V_DS: 20 V
- R_DS(on) max. at V_GS = 4.5 V: 0.057 Ω
- R_DS(on) max. at V_GS = 2.5 V: 0.075 Ω
- Q_g typ.: 3.5 nC
- I_D: 2.9 A (at T_A = 25 °C, 5 S)
Features:
- TrenchFET® power MOSFET
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Applications:
- Load switching for portable devices
- DC/DC converter
Package:
- SOT-23 (TO-236): No dimensions provided.
Features
- TrenchFET® power MOSFET
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Applications
- Load switching for portable devices
- DC/DC converter
N-Channel MOSFET
| ORDERING INFORMATION | |---------------------------------|------------------| | Package | SOT-23 | | Lead (Pb)-free | Si2302CDS-T1-E3 | | Lead (Pb)-free and halogen-free | Si2302CDS-T1-GE3 |
| ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted) |
|----------------------------------------------------------------------------------|------------------------|-----------------------------------|-------------|-----------------|------|
| PARAMETER | | SYMBOL | 5 S | STEADY
STATE | UNIT |
| Drain-source voltage | | V DS | 20 | 20 | V |
| Gate-source voltage | | $V_{GS}$ | ± 8 | ± 8 | V |
| Continuous drain current (T J = 150 °C) a | T A = 25 °C | I D | 2.9 | 2.6 | A |
| | T A = 70 °C | | 2.3 | 2.1 |
| Pulsed drain current b | | I DM | 10 | 10 | A |
| Continuous source current (diode conduction) a | | Is | 0.72 | 0.6 |
| Power dissipation a | T A = 25 °C | Б | 0.86 | 0.71 | W |
| | T A = 70 °C | P D | 0.55 | 0.46 |
| Operating junction and storage temperature range | | T J , T stq | -55 to +150 | -55 to +150 | °C |
| THERMAL RESISTANCE RATINGS | |------------------------------------------|--------------|-------------------|---------|---------|------| | PARAMETER | | SYMBOL | TYPICAL | MAXIMUM | UNIT | | Maximum impation to ambient 8 | t ≤ 5 s | ם | 120 | 145 | | Maximum junction-to-ambient a | Steady state | R thJA | 140 | 175 | °C/W | | Maximum junction-to-foot | Steady state | $R_{thJF}$ | 62 | 78 |
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