SI2302CDS-T1-E3

Part: Si2302CDS from Vishay Siliconix

Type: N-Channel 20 V (D-S) MOSFET

Description: A 20 V N-channel TrenchFET® power MOSFET with a continuous drain current of 2.9 A (at T A = 25 °C) and on-resistance as low as 0.045 Ω at V GS = 4.5 V.

Operating Conditions:

• Drain-source voltage: 0–20 V
• Gate-source voltage: ±8 V
• Operating temperature: -55 to +150 °C

Absolute Maximum Ratings:

• Max drain-source voltage: 20 V
• Max continuous drain current: 2.9 A (at T A = 25 °C, t ≤ 5 s)
• Max junction and storage temperature: +150 °C

Key Specs:

• Drain-source breakdown voltage (V DS): 20 V (V GS = 0 V, I D = 250 μA)
• Gate-threshold voltage (V GS(th)): 0.40 V min, 0.85 V max (V DS = V GS, I D = 250 μA)
• Drain-source on-resistance (R DS(on)): 0.057 Ω max (V GS = 4.5 V, I D = 3.6 A)
• Drain-source on-resistance (R DS(on)): 0.075 Ω max (V GS = 2.5 V, I D = 3.1 A)
• On-state drain current (I D(on)): 6 A min (V DS ≥ 10 V, V GS = 4.5 V)
• Total gate charge (Q g): 3.5 nC typ (V DS = 10 V, V GS = 4.5 V, I D = 3.6 A)
• Turn-on delay time (t d(on)): 8 ns typ (V DD = 10 V, R L = 2.78 Ω, I D ≈ 3.6 A, V GEN = 4.5 V, R g = 1 Ω)
• Fall time (t f): 7 ns typ (V DD = 10 V, R L = 2.78 Ω, I D ≈ 3.6 A, V GEN = 4.5 V, R g = 1 Ω)

Features:

• TrenchFET® power MOSFET
• Material categorization

Applications:

• Load switching for portable devices
• DC/DC converter

Package:

• SOT-23 (TO-236): 3-LEAD

• TrenchFET ® power MOSFET
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

• Load switching for portable devices
• DC/DC converter

Vishay Siliconix