IRFZ44N

Part: International Rectifier IRFZ44NPbF

Type: HEXFET® Power MOSFET

Key Specs:

• Drain-to-Source Breakdown Voltage ($V_{DSS}$): 55V
• Static Drain-to-Source On-Resistance ($R_{DS(on)}$): 17.5 mΩ
• Continuous Drain Current ($I_D$ @ T_C = 25°C): 49A

Features:

• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead-Free

Applications:

• Commercial-industrial applications at power dissipation levels to approximately 50 watts

Package:

• TO-220: null

| | Parameter | Min. | Typ. | Max. | Units | Conditions | |---------------------------------|--------------------------------------|------|-------|------|-------|---------------------------------------------------|--|--| | V _(BR)DSS | Drain-to-Source Breakdown Voltage | 55 | | | V | $V_{GS} = 0V, I_D = 250\mu A$ | | $\Delta V_{(BR)DSS}/\Delta T_J$ | Breakdown Voltage Temp. Coefficient | | 0.058 | | V/°C | Reference to 25°C, I _D = 1mA | | R _DS(on) | Static Drain-to-Source On-Resistance | | | 17.5 | mΩ | V _GS = 10V, I _D = 25A [4] | | V _GS(th) | Gate Threshold Voltage | 2.0 | | 4.0 | V | $V_{DS} = V_{GS}, I_{D} = 250 \mu A$ | | 9fs | Forward Transconductance | 19 | | | S | V _DS = 25V, I _D = 25A⊕ | | I _DSS | Drain-to-Source Leakage Current | | | 25 | μA | $V_{DS} = 55V, V_{GS} = 0V$ | | צפטי | | | | 250 | μΛ | $V_{DS} = 44V, V_{GS} = 0V, T_{J} = 150^{\circ}C$ | | 1 | Gate-to-Source Forward Leakage | | | 100 | nA | V _GS = 20V | | I _GSS | Gate-to-Source Reverse Leakage | | | -100 | | V _GS = -20V | | Q _g | Total Gate Charge | | | 63 | | I _D = 25A | | Q _gs | Gate-to-Source Charge | | | 14 | nC | $V_{DS} = 44V$ | | Q _gd | Gate-to-Drain ("Miller") Charge | | | 23 | | $V_{GS}$ = 10V, See Fig. 6 and 13 | | t _d(on) | Turn-On Delay Time | | 12 | | | V _DD = 28V | | t _r | Rise Time | | 60 | | ns | $I_D = 25A$ | | t _d(off) | Turn-Off Delay Time | | 44 | | 1115 | $R_G = 12\Omega$ | | t _f | Fall Time | | 45 | | | V _GS = 10V, See Fig. 10 ⊕ | | L _D | Internal Drain Inductance | | 4.5 | | nH | Between lead, | | L-D | | | | | | 6mm (0.25in.) | | | Internal Source Inductance | | 7.5 | | | from package | | L _S | | | | | | and center of die contact | | C _iss | Input Capacitance | | 1470 | | | V _GS = 0V | | Coss | Output Capacitance | | 360 | | | $V_{DS} = 25V$ | | C _rss | Reverse Transfer Capacitance | | 88 | | pF | f = 1.0MHz, See Fig. 5 | | E _AS | Single Pulse Avalanche Energy [2] | | 530[5] | 150© | mJ | I _AS = 25A, L = 0.47mH |

Source-Drain Ratings and Characteristics

| | Parameter | Min. | Typ. | Max. | Units | Conditions | |-----------------|---------------------------|------------------------------------------------------------------------------------------------|------|------|-------|-----------------------------------------------------|------------------| | Is | Continuous Source Current | | | 49 | | MOSFET symbol | | | (Body Diode) | 49 | 49 | - 49 | Α | showing the | | I _SM | Pulsed Source Current | | | | 100 | | integral reverse | | | (Body Diode)[1] | | | 160 | | p-n junction diode. | | $V_{SD}$ | Diode Forward Voltage | | | 1.3 | V | $T_J = 25^{\circ}C$ , $I_S = 25A$ , $V_{GS} = 0V$ [4] | | t _rr | Reverse Recovery Time | | 63 | 95 | ns | $T_J = 25^{\circ}C, I_F = 25A$ | | Q _rr | Reverse Recovery Charge | | 170 | 260 | nC | di/dt = 100A/µs [4] | | t _on | Forward Turn-On Time | Intrinsic turn-on time is negligible (turn-on is dominated by L _S +L _D ) |

Notes:

• [1] Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
• $\begin{tabular}{ll} \hline @ Starting $T_J=25^\circ$C, $L=0.48mH$\ $R_G=25\Omega$, $I_{AS}=25A$. (See Figure 12) \ \hline \end{tabular}$
• $\label{eq:loss} \begin{array}{l} \text{ } \exists \ \ I_{SD} \leq 25A, \ di/dt \leq 230A/\mu s, \ V_{DD} \leq V_{(BR)DSS}, \ T_{J} \leq 175^{\circ}C \end{array}$
• 4 Pulse width $\leq$ 400 $\mu$ s; duty cycle $\leq$ 2%.
• [5] This is a typical value at device destruction and represents operation outside rated limits.
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