IRFZ44N
Power MOSFETThe IRFZ44N is a power mosfet from Infineon Technologies. View the full IRFZ44N datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Official IRFZ44N datasheet (PDF) — the source this page was extracted from.
IRFZ44N Key Specifications
| Parameter | Value |
|---|---|
| Drain-to-Source Breakdown Voltage (V_GS = 0V, I_D = 250μA) | 55 V |
| Static Drain-to-Source On-Resistance (V_GS = 10V, I_D = 25A) | 17.5 mΩ |
| Gate Threshold Voltage (V_DS = V_GS, I_D = 250μA) | 2.0 V (min) to 4.0 V (max) |
| Drain-to-Source Leakage Current (V_DS = 55V, V_GS = 0V) | 25 μA (max) |
| Total Gate Charge (I_D = 25A) | 63 nC (max) |
| Turn-On Delay Time (V_DD = 28V, I_D = 25A, R_G = 12Ω, V_GS = 10V) | 12 ns (typ) |
| Input Capacitance (V_GS = 0V, V_DS = 25V, ƒ = 1.0MHz) | 1470 pF (typ) |
| Continuous Source Current (Body Diode) | 49 A (max) |
IRFZ44N Overview
Part: IRFZ44NPbF from International Rectifier
Type: HEXFET® Power MOSFET
Description: A 55V, 49A HEXFET® Power MOSFET with an on-resistance of 17.5 mΩ, featuring advanced process technology, fast switching, and a 175°C operating temperature.
Operating Conditions:
- Drain-to-Source Voltage: Up to 55V
- Gate-to-Source Voltage: ±20V
- Operating temperature: -55 to +175 °C
Absolute Maximum Ratings:
- Max Drain-to-Source Voltage: 55 V
- Max continuous Drain Current (T_C = 25°C, V_GS @10V): 49 A
- Max Gate-to-Source Voltage: ±20 V
- Max Power Dissipation (T_C = 25°C): 94 W
- Max Operating Junction and Storage Temperature: +175 °C
Key Specs:
- Drain-to-Source Breakdown Voltage (V_GS = 0V, I_D = 250μA): 55 V
- Static Drain-to-Source On-Resistance (V_GS = 10V, I_D = 25A): 17.5 mΩ
- Gate Threshold Voltage (V_DS = V_GS, I_D = 250μA): 2.0 V (min) to 4.0 V (max)
- Drain-to-Source Leakage Current (V_DS = 55V, V_GS = 0V): 25 μA (max)
- Total Gate Charge (I_D = 25A): 63 nC (max)
- Turn-On Delay Time (V_DD = 28V, I_D = 25A, R_G = 12Ω, V_GS = 10V): 12 ns (typ)
- Input Capacitance (V_GS = 0V, V_DS = 25V, ƒ = 1.0MHz): 1470 pF (typ)
- Continuous Source Current (Body Diode): 49 A (max)
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Applications:
Package:
- TO-220
IRFZ44N Pin Configuration
IRFZ44N TO-220AB Pinout
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | G | I | Gate |
| 2 | D | O | Drain |
| 3 | S | O | Source |
Notes
- Package: TO-220AB (3-pin through-hole power package)
- Pin 2 (D): Connected to the metal tab/case for improved thermal contact
- This is an N-channel MOSFET with an integral body diode (Source-Drain diode)
- The device is fully avalanche rated with a 55V drain-source breakdown voltage and 17.5mΩ on-resistance at VGS = 10V, ID = 25A
IRFZ44N Electrical Characteristics
| Parameter | Min. | Typ. | Max. | Units | Conditions | |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-to-Source Breakdown Voltage | 55 | --- | --- | V | V GS = 0V, I D = 250μA |
| ∆ V (BR)DSS / ∆ T J | Breakdown Voltage Temp. Coefficient | --- | 0.058 | --- | V/°C | Reference to 25°C, I D = 1mA |
| R DS(on) | Static Drain-to-Source On-Resistance | --- | --- | 17.5 | m Ω | V GS = 10V, I D = 25A |
| V GS(th) | Gate Threshold Voltage | 2.0 | --- | 4.0 | V | V DS = V GS , I D = 250μA |
| g fs | Forward Transconductance | 19 | --- | --- | S | V DS = 25V, I D = 25A |
| I DSS | Drain-to-Source Leakage Current | --- | --- | 25 | μA | V DS = 55V, V GS = 0V |
| Drain-to-Source Leakage Current | --- | --- | 250 | μA | V DS = 44V, V GS = 0V, T J = 150°C | |
| I GSS | Gate-to-Source Forward Leakage | --- | --- | 100 | nA | V GS = 20V |
| I GSS | Gate-to-Source Reverse Leakage | --- | --- | -100 | nA | V GS = -20V |
| Q g | Total Gate Charge | --- | --- | 63 | nC | I D = 25A |
| Q gs | Gate-to-Source Charge | --- | --- | 14 | nC | V DS = 44V |
| Q gd | Gate-to-Drain ("Miller") Charge | --- | --- | 23 | nC | V GS = 10V, See Fig. 6 and 13 |
| t d(on) | Turn-On Delay Time | --- | 12 | --- | ns | V DD = 28V |
| t r | Rise Time | --- | 60 | --- | ns | I D = 25A |
| t d(off) | Turn-Off Delay Time | --- | 44 | --- | ns | R G = 12 Ω |
| t f | Fall Time | --- | 45 | --- | nH | V GS = 10V, See Fig. 10 |
| L D | Internal Drain Inductance | --- | 4.5 | --- | Between lead, 6mm (0.25in.) G | |
| L S | Internal Source Inductance | --- | 7.5 | --- | from package and center of die contact | |
| C iss | Input Capacitance | --- | 1470 | --- | pF | V GS = 0V = 25V |
| C oss | Output Capacitance | --- | 360 | --- | pF | V DS |
| C rss | Reverse Transfer Capacitance | --- | 88 | --- | ƒ = 1.0MHz, See Fig. 5 | |
| E AS | Single Pulse Avalanche Energy | --- | 530 | 150 | mJ | I AS = 25A, L = 0.47mH |
IRFZ44N Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| I D @T C = 25°C | Continuous Drain Current, V GS @10V | 49 | A |
| I D @T C = 100°C | Continuous Drain Current, V GS @10V | 35 | A |
| I DM | Pulsed Drain Current | 160 | A |
| P D @T C = 25°C | Power Dissipation | 94 | W |
| Linear Derating Factor | 0.63 | W/°C | |
| V GS | Gate-to-Source Voltage | ± 20 | V |
| I AR | Avalanche Current | 25 | A |
| E AR | Repetitive Avalanche Energy | 9.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| T J T | Operating Junction and | -55 to + 175 | °C |
| STG | Storage Temperature Range | °C | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
IRFZ44N Thermal Information
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| R θ JC | Junction-to-Case | --- | 1.5 | |
| R θ CS | Case-to-Sink, Flat, Greased Surface | 0.50 | --- | °C/W |
| R θ JA | Junction-to-Ambient | --- | 62 |
RDS(on) = 17.5m Ω
ID = 49A
IRFZ44N Package Information
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRFZ44NPBF | Infineon Technologies | TO-220-3 |
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All MOSFETs datasheetsAll Infineon Technologies datasheets (140)
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