IRFZ44NPBF
Power MOSFETThe IRFZ44NPBF is a power mosfet from Infineon Technologies. View the full IRFZ44NPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
IRFZ44NPBF shares its datasheet with IRFZ44N, whose page lists every part number it covers.
Official IRFZ44NPBF datasheet (PDF) — the source this page was extracted from.
IRFZ44NPBF Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 49A (Tc) |
| Drain-Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 63 nC @ 10 V |
| Input Capacitance (Ciss) | 1470 pF @ 25 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Power Dissipation (Max) | 94W (Tc) |
| Rds(on) | 17.5mOhm @ 25A, 10V Ω |
| Standard Pack Qty | 1000 |
| Supplier Device Package | TO-220AB |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 4V @ 250µA |
IRFZ44NPBF Overview
Part: IRFZ44NPbF from International Rectifier
Type: HEXFET® Power MOSFET
Description: A 55V, 49A HEXFET® Power MOSFET with an on-resistance of 17.5 mΩ, featuring advanced process technology, fast switching, and a 175°C operating temperature.
Operating Conditions:
- Drain-to-Source Voltage: Up to 55V
- Gate-to-Source Voltage: ±20V
- Operating temperature: -55 to +175 °C
Absolute Maximum Ratings:
- Max Drain-to-Source Voltage: 55 V
- Max continuous Drain Current (T_C = 25°C, V_GS @10V): 49 A
- Max Gate-to-Source Voltage: ±20 V
- Max Power Dissipation (T_C = 25°C): 94 W
- Max Operating Junction and Storage Temperature: +175 °C
Key Specs:
- Drain-to-Source Breakdown Voltage (V_GS = 0V, I_D = 250μA): 55 V
- Static Drain-to-Source On-Resistance (V_GS = 10V, I_D = 25A): 17.5 mΩ
- Gate Threshold Voltage (V_DS = V_GS, I_D = 250μA): 2.0 V (min) to 4.0 V (max)
- Drain-to-Source Leakage Current (V_DS = 55V, V_GS = 0V): 25 μA (max)
- Total Gate Charge (I_D = 25A): 63 nC (max)
- Turn-On Delay Time (V_DD = 28V, I_D = 25A, R_G = 12Ω, V_GS = 10V): 12 ns (typ)
- Input Capacitance (V_GS = 0V, V_DS = 25V, ƒ = 1.0MHz): 1470 pF (typ)
- Continuous Source Current (Body Diode): 49 A (max)
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Applications:
Package:
- TO-220
IRFZ44NPBF Electrical Characteristics
| Parameter | Min. | Typ. | Max. | Units | Conditions | |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-to-Source Breakdown Voltage | 55 | --- | --- | V | V GS = 0V, I D = 250μA |
| ∆ V (BR)DSS / ∆ T J | Breakdown Voltage Temp. Coefficient | --- | 0.058 | --- | V/°C | Reference to 25°C, I D = 1mA |
| R DS(on) | Static Drain-to-Source On-Resistance | --- | --- | 17.5 | m Ω | V GS = 10V, I D = 25A |
| V GS(th) | Gate Threshold Voltage | 2.0 | --- | 4.0 | V | V DS = V GS , I D = 250μA |
| g fs | Forward Transconductance | 19 | --- | --- | S | V DS = 25V, I D = 25A |
| I DSS | Drain-to-Source Leakage Current | --- | --- | 25 | μA | V DS = 55V, V GS = 0V |
| Drain-to-Source Leakage Current | --- | --- | 250 | μA | V DS = 44V, V GS = 0V, T J = 150°C | |
| I GSS | Gate-to-Source Forward Leakage | --- | --- | 100 | nA | V GS = 20V |
| I GSS | Gate-to-Source Reverse Leakage | --- | --- | -100 | nA | V GS = -20V |
| Q g | Total Gate Charge | --- | --- | 63 | nC | I D = 25A |
| Q gs | Gate-to-Source Charge | --- | --- | 14 | nC | V DS = 44V |
| Q gd | Gate-to-Drain ("Miller") Charge | --- | --- | 23 | nC | V GS = 10V, See Fig. 6 and 13 |
| t d(on) | Turn-On Delay Time | --- | 12 | --- | ns | V DD = 28V |
| t r | Rise Time | --- | 60 | --- | ns | I D = 25A |
| t d(off) | Turn-Off Delay Time | --- | 44 | --- | ns | R G = 12 Ω |
| t f | Fall Time | --- | 45 | --- | nH | V GS = 10V, See Fig. 10 |
| L D | Internal Drain Inductance | --- | 4.5 | --- | Between lead, 6mm (0.25in.) G | |
| L S | Internal Source Inductance | --- | 7.5 | --- | from package and center of die contact | |
| C iss | Input Capacitance | --- | 1470 | --- | pF | V GS = 0V = 25V |
| C oss | Output Capacitance | --- | 360 | --- | pF | V DS |
| C rss | Reverse Transfer Capacitance | --- | 88 | --- | ƒ = 1.0MHz, See Fig. 5 | |
| E AS | Single Pulse Avalanche Energy | --- | 530 | 150 | mJ | I AS = 25A, L = 0.47mH |
IRFZ44NPBF Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| I D @T C = 25°C | Continuous Drain Current, V GS @10V | 49 | A |
| I D @T C = 100°C | Continuous Drain Current, V GS @10V | 35 | A |
| I DM | Pulsed Drain Current | 160 | A |
| P D @T C = 25°C | Power Dissipation | 94 | W |
| Linear Derating Factor | 0.63 | W/°C | |
| V GS | Gate-to-Source Voltage | ± 20 | V |
| I AR | Avalanche Current | 25 | A |
| E AR | Repetitive Avalanche Energy | 9.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| T J T | Operating Junction and | -55 to + 175 | °C |
| STG | Storage Temperature Range | °C | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | °C | |
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
IRFZ44NPBF Thermal Information
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| R θ JC | Junction-to-Case | --- | 1.5 | |
| R θ CS | Case-to-Sink, Flat, Greased Surface | 0.50 | --- | °C/W |
| R θ JA | Junction-to-Ambient | --- | 62 |
RDS(on) = 17.5m Ω
ID = 49A
IRFZ44NPBF Package Information
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRFZ44N | Infineon Technologies | TO-220AB |
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All MOSFETs datasheetsAll Infineon Technologies datasheets (140)
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