AO3402
N-Channel MOSFETThe AO3402 is a n-channel mosfet from VBsemi. View the full AO3402 datasheet below including key specifications, absolute maximum ratings.
Manufacturer
VBsemi
Category
N-Channel MOSFET
Package
3-SMD, SOT-23-3 Variant
Lifecycle
Not For New Designs
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 4A (Ta) |
| Drain-Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 4.34 nC @ 4.5 V |
| Input Capacitance (Ciss) | 390 pF @ 15 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 3-SMD, SOT-23-3 Variant |
| Power Dissipation (Max) | 1.4W (Ta) |
| Rds(on) | 55mOhm @ 4A, 10V Ω |
| Supplier Device Package | SOT-23-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Gate Threshold Voltage | 1.4V @ 250µA |
Overview
Part: AO3402
Type: N-Channel MOSFET
Description: 30 V, 4.0 A N-Channel MOSFET with 36 mΩ typical on-resistance.
Absolute Maximum Ratings:
- Max supply voltage: 30 V (Drain-Source Voltage)
- Max continuous current: 4 A (Continuous Drain Current)
- Max junction/storage temperature: 150 °C (Junction Temperature)
Key Specs:
- Drain-source breakdown voltage: 30 V (min) at VGS = 0V, ID = 250μA
- Zero gate voltage drain current: 1 μA (max) at VDS = 24V, VGS = 0V
- Gate threshold voltage: 0.6 V (min) to 1.4 V (max) at VDS = VGS, ID = 250μA
- Drain-source on-resistance: 36 mΩ (typ) at VGS = 10V, ID = 4A
- Input capacitance: 390 pF (typ) at VDS = 15V, VGS = 0V, f = 1MHz
- Total gate charge: 4.34 nC (typ) at VDS = 15V, VGS = 4.5V, ID = 4A
Features:
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Package:
- SOT-23 (3 pins)
Features
- z High density cell design for low RDS(ON)
- z Voltage controlled small signal switch
- z Rugged and reliable
- z High saturation current capability
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | V DS | 30 | V |
| Gate-Source Voltage | V GS | ±12 | V |
| Continuous Drain Current | I D | 4 | A |
| Pulsed Drain Current (note 1) | I DM | 15 | A |
| Power Dissipation | P D | 1.2 | W |
| Thermal Resistance from Junction to Ambient (note 2) | R θ JA | 103 | °C /W |
| Junction Temperature | T J | 150 | °C |
| Storage Temperature | T STG | -55~+150 | °C |
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