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AO3402

N-Channel MOSFET

The AO3402 is a n-channel mosfet from VBsemi. View the full AO3402 datasheet below including key specifications, absolute maximum ratings.

Official AO3402 datasheet (PDF) — the source this page was extracted from.

Manufacturer

VBsemi

Category

MOSFETs

Package

3-SMD, SOT-23-3 Variant

Lifecycle

Not For New Designs

AO3402 Key Specifications

ParameterValue
Continuous Drain Current4A (Ta)
Drain-Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
FET TypeN-Channel
Gate Charge (Qg)4.34 nC @ 4.5 V
Input Capacitance (Ciss)390 pF @ 15 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case3-SMD, SOT-23-3 Variant
Power Dissipation (Max)1.4W (Ta)
Rds(on)55mOhm @ 4A, 10V Ω
Supplier Device PackageSOT-23-3
Diode TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Gate Threshold Voltage1.4V @ 250µA

AO3402 Overview

Part: AO3402

Type: N-Channel MOSFET

Description: 30 V, 4.0 A N-Channel MOSFET with 36 mΩ typical on-resistance.

Absolute Maximum Ratings:

  • Max supply voltage: 30 V (Drain-Source Voltage)
  • Max continuous current: 4 A (Continuous Drain Current)
  • Max junction/storage temperature: 150 °C (Junction Temperature)

Key Specs:

  • Drain-source breakdown voltage: 30 V (min) at VGS = 0V, ID = 250μA
  • Zero gate voltage drain current: 1 μA (max) at VDS = 24V, VGS = 0V
  • Gate threshold voltage: 0.6 V (min) to 1.4 V (max) at VDS = VGS, ID = 250μA
  • Drain-source on-resistance: 36 mΩ (typ) at VGS = 10V, ID = 4A
  • Input capacitance: 390 pF (typ) at VDS = 15V, VGS = 0V, f = 1MHz
  • Total gate charge: 4.34 nC (typ) at VDS = 15V, VGS = 4.5V, ID = 4A

Features:

  • High density cell design for low RDS(ON)
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability

Package:

  • SOT-23 (3 pins)

AO3402 Features

  • z High density cell design for low RDS(ON)
  • z Voltage controlled small signal switch
  • z Rugged and reliable
  • z High saturation current capability

AO3402 Absolute Maximum Ratings

ParameterSymbolValueUnit
Drain-Source VoltageV DS30V
Gate-Source VoltageV GS±12V
Continuous Drain CurrentI D4A
Pulsed Drain Current (note 1)I DM15A
Power DissipationP D1.2W
Thermal Resistance from Junction to Ambient (note 2)R θ JA103°C /W
Junction TemperatureT J150°C
Storage TemperatureT STG-55~+150°C

Other MOSFETs

  • 20N06D – onsemi, Power MOSFET
  • AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • IRF540NPBF – Infineon Technologies, Power MOSFET
  • 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
  • DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • 2N7002 – Nexperia, N-channel Trench MOSFET

All MOSFETs datasheets

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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