DMG1012T
N-CHANNEL ENHANCEMENT MODE MOSFETThe DMG1012T is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMG1012T datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
DMG1012T shares its datasheet with DMG1012T-7, whose page lists every part number it covers.
Official DMG1012T datasheet (PDF) — the source this page was extracted from.
DMG1012T Key Specifications
| Parameter | Value |
|---|---|
| Input Capacitance (C Iss) | 60.67 pF (typ) |
| Gate-Source Voltage (V GSS) | ±6 V |
| Operating Temperature Range | -55°C to +150°C |
| Drain-Source Voltage (V DSS) | 20 V |
| Turn-On Delay Time (T D(ON)) | 5.1 ns |
| Total Power Dissipation (P D) | 0.28 W |
| Continuous Drain Current (I D) | 0.63 A (at +25°C) |
| Gate Threshold Voltage (V GS(TH)) | 0.5V to 1.0V |
| Static Drain-Source On-Resistance (R DS(ON)) | 0.3 Ω (typ) at V_GS=4.5V |
DMG1012T Overview
Part: DMG1012T — Diodes Incorporated
Type: N-CHANNEL ENHANCEMENT MODE MOSFET
Description: 20 V, 0.63 A N-channel enhancement mode MOSFET with a typical on-resistance of 0.3 Ω at V_GS = 4.5 V and fast switching speeds.
Operating Conditions:
- Operating temperature: -55 to +150 °C
- Continuous Drain Current: 0.63 A (at T_A = +25 °C)
Absolute Maximum Ratings:
- Max Drain-Source Voltage: 20 V
- Max Gate-Source Voltage: ±6 V
- Max continuous Drain Current: 0.63 A (at T_A = +25 °C)
- Max junction/storage temperature: +150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV_DSS): 20 V (V_GS = 0V, I_D = 250μA)
- Gate Threshold Voltage (V_GS(TH)): 0.5 V (min) to 1.0 V (max) (V_DS = V_GS, I_D = 250μA)
- Static Drain-Source On-Resistance (R_DS(ON)): 0.3 Ω (typ) (V_GS = 4.5V, I_D = 600mA)
- Zero Gate Voltage Drain Current (I_DSS): 100 nA (max) (V_DS = 20V, V_GS = 0V, T_J = +25°C)
- Input Capacitance (C_iss): 60.67 pF (typ) (V_DS = 16V, V_GS = 0V, f = 1.0MHz)
- Total Gate Charge (Qg): 736.6 pC (typ) (V_GS = 4.5V, V_DS = 10V, I_D = 250mA)
- Turn-On Delay Time (t_D(ON)): 5.1 ns (typ) (V_DD = 10V, V_GS = 4.5V, R_L = 47Ω, R_G = 10Ω, I = 200mA)
- Pulsed Drain Current (I_DM): 3 A
Features:
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected up to 2kV
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. 'Green' Device
Package:
- SOT523 (1.60 mm x 1.60 mm typical)
DMG1012T Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected up to 2kV
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
SOT523
Top View
E S D P R O T E C T E D T O 2 k V ESD PROTECTION TO 2kV
DMG1012T Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 20 | - | - | V | V GS = 0V, I D = 250μA |
| Zero Gate Voltage Drain Current T J = +25° C | I DSS | - | - | 100 | nA | V DS = 20V, V GS = 0V |
| Gate-Source Leakage | I GSS | - | - | ±1.0 | μA | V GS = ±4.5V, V DS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | V GS(TH) | 0.5 | - | 1.0 | V | V DS = V GS , I D = 250μA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 0.3 | 0.4 | Ω | V GS = 4.5V, I D = 600mA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 0.4 | 0.5 | Ω | V GS = 2.5V, I D = 500mA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 0.5 | 0.7 | Ω | V GS = 1.8V, I D = 350mA |
| Forward Transfer Admittance | \ | Y fs \ | - | 1.4 | - | |
| Diode Forward Voltage | V SD | - | 0.7 | 1.2 | V | V GS = 0V, I S = 150mA |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | C iss | - | 60.67 | - | pF | V DS = 16V, V GS = 0V, f = 1.0MHz |
| Output Capacitance | C oss | - | 9.68 | - | pF | V DS = 16V, V GS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | C rss | - | 5.37 | - | pF | V DS = 16V, V GS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | - | 736.6 | - | pC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Source Charge | Qgs | - | 93.6 | - | pC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Drain Charge | Qgd | - | 116.6 | - | pC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Turn-On Delay Time | t D(ON) | - | 5.1 | - | ns | V DD = 10V, V GS = 4.5V, R L = 47Ω, R G = 10Ω, I = 200mA |
| Turn-On Rise Time | t R | - | 7.4 | - | ns | V DD = 10V, V GS = 4.5V, R L = 47Ω, R G = 10Ω, I = 200mA |
| Turn-Off Delay Time | t D(OFF) | - | 26.7 | - | ns | D |
| Turn-Off Fall Time | t F | - | 12.3 | - | ns | V DD = 10V, V GS = 4.5V, R L = 47Ω, R G = 10Ω, I = 200mA |
Notes:
-
Device mounted on FR-4 PCB, with minimum recommended pad layout.
-
Short duration pulse test used to minimize self-heating effect.
-
Guaranteed by design. Not subject to product testing.
DMG1012T
DMG1012T Absolute Maximum Ratings
| Characteristic | Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | V DSS | 20 | V |
| Gate-Source Voltage | Gate-Source Voltage | Gate-Source Voltage | V GSS | ±6 | V |
| Continuous Drain Current (Note 6) | Steady State | T A = +25 C T A = +85 C | I D | 0.63 0.45 | A |
| Pulsed Drain Current | Pulsed Drain Current | Pulsed Drain Current | I DM | 3 | A |
DMG1012T Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Total Power Dissipation (Note 6) | P D | 0.28 | W |
| Thermal Resistance, Junction to Ambient (Note 6) | R ← JA | 452 | ° C/W |
| Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
DMG1012T Package Information
- Package: SOT523
- Package Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish-Matte Tin Annealed over Alloy 42 LeadFrame. Solderable per MIL-STD-202, Method 208
- Terminal Connections: See Diagram
- Weight: 0.002 grams (Approximate)
Equivalent Circuit (Note 5)
Top View
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMG1012T-13 | Diodes Incorporated | SOT-523 |
| DMG1012T-7 | Diodes Incorporated | SOT-523 |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- IRF540NPBF – Infineon Technologies, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- IRF540N – Infineon Technologies, Power MOSFET
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