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DMG1012T-13

N-CHANNEL ENHANCEMENT MODE MOSFET

The DMG1012T-13 is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMG1012T-13 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

DMG1012T-13 shares its datasheet with DMG1012T-7, whose page lists every part number it covers.

Official DMG1012T-13 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Diodes Incorporated

Category

MOSFETs

Package

SOT-523

DMG1012T-13 Key Specifications

ParameterValue
Continuous Drain Current630mA (Ta)
Drain-Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
FET TypeN-Channel
Gate Charge (Qg)0.74 nC @ 4.5 V
Input Capacitance (Ciss)60.67 pF @ 16 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseSOT-523
PackagingMouseReel
Power Dissipation (Max)280mW (Ta)
Rds(on)400mOhm @ 600mA, 4.5V Ω
Standard Pack Qty10000
Supplier Device PackageSOT-523
Diode TechnologyMOSFET (Metal Oxide)
Vgs (Max)±6V
Gate Threshold Voltage1V @ 250µA

DMG1012T-13 Overview

Part: DMG1012T — Diodes Incorporated

Type: N-CHANNEL ENHANCEMENT MODE MOSFET

Description: 20 V, 0.63 A N-channel enhancement mode MOSFET with a typical on-resistance of 0.3 Ω at V_GS = 4.5 V and fast switching speeds.

Operating Conditions:

  • Operating temperature: -55 to +150 °C
  • Continuous Drain Current: 0.63 A (at T_A = +25 °C)

Absolute Maximum Ratings:

  • Max Drain-Source Voltage: 20 V
  • Max Gate-Source Voltage: ±6 V
  • Max continuous Drain Current: 0.63 A (at T_A = +25 °C)
  • Max junction/storage temperature: +150 °C

Key Specs:

  • Drain-Source Breakdown Voltage (BV_DSS): 20 V (V_GS = 0V, I_D = 250μA)
  • Gate Threshold Voltage (V_GS(TH)): 0.5 V (min) to 1.0 V (max) (V_DS = V_GS, I_D = 250μA)
  • Static Drain-Source On-Resistance (R_DS(ON)): 0.3 Ω (typ) (V_GS = 4.5V, I_D = 600mA)
  • Zero Gate Voltage Drain Current (I_DSS): 100 nA (max) (V_DS = 20V, V_GS = 0V, T_J = +25°C)
  • Input Capacitance (C_iss): 60.67 pF (typ) (V_DS = 16V, V_GS = 0V, f = 1.0MHz)
  • Total Gate Charge (Qg): 736.6 pC (typ) (V_GS = 4.5V, V_DS = 10V, I_D = 250mA)
  • Turn-On Delay Time (t_D(ON)): 5.1 ns (typ) (V_DD = 10V, V_GS = 4.5V, R_L = 47Ω, R_G = 10Ω, I = 200mA)
  • Pulsed Drain Current (I_DM): 3 A

Features:

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 2kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. 'Green' Device

Package:

  • SOT523 (1.60 mm x 1.60 mm typical)

DMG1012T-13 Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 2kV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. 'Green' Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

SOT523

Top View

E S D P R O T E C T E D T O 2 k V ESD PROTECTION TO 2kV

DMG1012T-13 Electrical Characteristics

CharacteristicSymbolMinTypMaxUnitTest Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown VoltageBV DSS20--VV GS = 0V, I D = 250μA
Zero Gate Voltage Drain Current T J = +25° CI DSS--100nAV DS = 20V, V GS = 0V
Gate-Source LeakageI GSS--±1.0μAV GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold VoltageV GS(TH)0.5-1.0VV DS = V GS , I D = 250μA
Static Drain-Source On-ResistanceR DS(ON)-0.30.4ΩV GS = 4.5V, I D = 600mA
Static Drain-Source On-ResistanceR DS(ON)-0.40.5ΩV GS = 2.5V, I D = 500mA
Static Drain-Source On-ResistanceR DS(ON)-0.50.7ΩV GS = 1.8V, I D = 350mA
Forward Transfer Admittance\Y fs \-1.4-
Diode Forward VoltageV SD-0.71.2VV GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input CapacitanceC iss-60.67-pFV DS = 16V, V GS = 0V, f = 1.0MHz
Output CapacitanceC oss-9.68-pFV DS = 16V, V GS = 0V, f = 1.0MHz
Reverse Transfer CapacitanceC rss-5.37-pFV DS = 16V, V GS = 0V, f = 1.0MHz
Total Gate ChargeQg-736.6-pCV GS = 4.5V, V DS = 10V, I D = 250mA
Gate-Source ChargeQgs-93.6-pCV GS = 4.5V, V DS = 10V, I D = 250mA
Gate-Drain ChargeQgd-116.6-pCV GS = 4.5V, V DS = 10V, I D = 250mA
Turn-On Delay Timet D(ON)-5.1-nsV DD = 10V, V GS = 4.5V, R L = 47Ω, R G = 10Ω, I = 200mA
Turn-On Rise Timet R-7.4-nsV DD = 10V, V GS = 4.5V, R L = 47Ω, R G = 10Ω, I = 200mA
Turn-Off Delay Timet D(OFF)-26.7-nsD
Turn-Off Fall Timet F-12.3-nsV DD = 10V, V GS = 4.5V, R L = 47Ω, R G = 10Ω, I = 200mA

Notes:

  1. Device mounted on FR-4 PCB, with minimum recommended pad layout.

  2. Short duration pulse test used to minimize self-heating effect.

  3. Guaranteed by design. Not subject to product testing.

DMG1012T

DMG1012T-13 Absolute Maximum Ratings

CharacteristicCharacteristicCharacteristicSymbolValueUnit
Drain-Source VoltageDrain-Source VoltageDrain-Source VoltageV DSS20V
Gate-Source VoltageGate-Source VoltageGate-Source VoltageV GSS±6V
Continuous Drain Current (Note 6)Steady StateT A = +25 C T A = +85 CI D0.63 0.45A
Pulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentI DM3A

DMG1012T-13 Thermal Information

CharacteristicSymbolValueUnit
Total Power Dissipation (Note 6)P D0.28W
Thermal Resistance, Junction to Ambient (Note 6)R ← JA452° C/W
Operating and Storage Temperature RangeT J, T STG-55 to +150° C

DMG1012T-13 Package Information

  • Package: SOT523
  • Package Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish-Matte Tin Annealed over Alloy 42 LeadFrame. Solderable per MIL-STD-202, Method 208
  • Terminal Connections: See Diagram
  • Weight: 0.002 grams (Approximate)

Equivalent Circuit (Note 5)

Top View

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
DMG1012TDiodes IncorporatedSOT523
DMG1012T-7Diodes IncorporatedSOT-523

Other MOSFETs

  • 20N06D – onsemi, Power MOSFET
  • IRF540NPBF – Infineon Technologies, Power MOSFET
  • AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
  • 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
  • DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
  • IRF540N – Infineon Technologies, Power MOSFET

All MOSFETs datasheetsAll Diodes datasheets (217)

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