DMG1012T-13
N-CHANNEL ENHANCEMENT MODE MOSFETThe DMG1012T-13 is a n-channel enhancement mode mosfet from Diodes Incorporated. View the full DMG1012T-13 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 630mA (Ta) |
| Drain-Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 0.74 nC @ 4.5 V |
| Input Capacitance (Ciss) | 60.67 pF @ 16 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | SOT-523 |
| Packaging | MouseReel |
| Power Dissipation (Max) | 280mW (Ta) |
| Rds(on) | 400mOhm @ 600mA, 4.5V Ω |
| Standard Pack Qty | 10000 |
| Supplier Device Package | SOT-523 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±6V |
| Gate Threshold Voltage | 1V @ 250µA |
Overview
Part: DMG1012T — Diodes Incorporated
Type: N-CHANNEL ENHANCEMENT MODE MOSFET
Description: 20 V, 0.63 A N-channel enhancement mode MOSFET with a typical on-resistance of 0.3 Ω at V_GS = 4.5 V and fast switching speeds.
Operating Conditions:
- Operating temperature: -55 to +150 °C
- Continuous Drain Current: 0.63 A (at T_A = +25 °C)
Absolute Maximum Ratings:
- Max Drain-Source Voltage: 20 V
- Max Gate-Source Voltage: ±6 V
- Max continuous Drain Current: 0.63 A (at T_A = +25 °C)
- Max junction/storage temperature: +150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV_DSS): 20 V (V_GS = 0V, I_D = 250μA)
- Gate Threshold Voltage (V_GS(TH)): 0.5 V (min) to 1.0 V (max) (V_DS = V_GS, I_D = 250μA)
- Static Drain-Source On-Resistance (R_DS(ON)): 0.3 Ω (typ) (V_GS = 4.5V, I_D = 600mA)
- Zero Gate Voltage Drain Current (I_DSS): 100 nA (max) (V_DS = 20V, V_GS = 0V, T_J = +25°C)
- Input Capacitance (C_iss): 60.67 pF (typ) (V_DS = 16V, V_GS = 0V, f = 1.0MHz)
- Total Gate Charge (Qg): 736.6 pC (typ) (V_GS = 4.5V, V_DS = 10V, I_D = 250mA)
- Turn-On Delay Time (t_D(ON)): 5.1 ns (typ) (V_DD = 10V, V_GS = 4.5V, R_L = 47Ω, R_G = 10Ω, I = 200mA)
- Pulsed Drain Current (I_DM): 3 A
Features:
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected up to 2kV
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. 'Green' Device
Package:
- SOT523 (1.60 mm x 1.60 mm typical)
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected up to 2kV
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
SOT523
Top View
E S D P R O T E C T E D T O 2 k V ESD PROTECTION TO 2kV
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 20 | - | - | V | V GS = 0V, I D = 250μA |
| Zero Gate Voltage Drain Current T J = +25° C | I DSS | - | - | 100 | nA | V DS = 20V, V GS = 0V |
| Gate-Source Leakage | I GSS | - | - | ±1.0 | μA | V GS = ±4.5V, V DS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | V GS(TH) | 0.5 | - | 1.0 | V | V DS = V GS , I D = 250μA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 0.3 | 0.4 | Ω | V GS = 4.5V, I D = 600mA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 0.4 | 0.5 | Ω | V GS = 2.5V, I D = 500mA |
| Static Drain-Source On-Resistance | R DS(ON) | - | 0.5 | 0.7 | Ω | V GS = 1.8V, I D = 350mA |
| Forward Transfer Admittance | \ | Y fs \ | - | 1.4 | - | |
| Diode Forward Voltage | V SD | - | 0.7 | 1.2 | V | V GS = 0V, I S = 150mA |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | C iss | - | 60.67 | - | pF | V DS = 16V, V GS = 0V, f = 1.0MHz |
| Output Capacitance | C oss | - | 9.68 | - | pF | V DS = 16V, V GS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | C rss | - | 5.37 | - | pF | V DS = 16V, V GS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | - | 736.6 | - | pC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Source Charge | Qgs | - | 93.6 | - | pC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Gate-Drain Charge | Qgd | - | 116.6 | - | pC | V GS = 4.5V, V DS = 10V, I D = 250mA |
| Turn-On Delay Time | t D(ON) | - | 5.1 | - | ns | V DD = 10V, V GS = 4.5V, R L = 47Ω, R G = 10Ω, I = 200mA |
| Turn-On Rise Time | t R | - | 7.4 | - | ns | V DD = 10V, V GS = 4.5V, R L = 47Ω, R G = 10Ω, I = 200mA |
| Turn-Off Delay Time | t D(OFF) | - | 26.7 | - | ns | D |
| Turn-Off Fall Time | t F | - | 12.3 | - | ns | V DD = 10V, V GS = 4.5V, R L = 47Ω, R G = 10Ω, I = 200mA |
Notes:
-
Device mounted on FR-4 PCB, with minimum recommended pad layout.
-
Short duration pulse test used to minimize self-heating effect.
-
Guaranteed by design. Not subject to product testing.
DMG1012T
Absolute Maximum Ratings
| Characteristic | Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | Drain-Source Voltage | V DSS | 20 | V |
| Gate-Source Voltage | Gate-Source Voltage | Gate-Source Voltage | V GSS | ±6 | V |
| Continuous Drain Current (Note 6) | Steady State | T A = +25 C T A = +85 C | I D | 0.63 0.45 | A |
| Pulsed Drain Current | Pulsed Drain Current | Pulsed Drain Current | I DM | 3 | A |
Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Total Power Dissipation (Note 6) | P D | 0.28 | W |
| Thermal Resistance, Junction to Ambient (Note 6) | R ← JA | 452 | ° C/W |
| Operating and Storage Temperature Range | T J, T STG | -55 to +150 | ° C |
Package Information
- Package: SOT523
- Package Material: Molded Plastic, 'Green' Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish-Matte Tin Annealed over Alloy 42 LeadFrame. Solderable per MIL-STD-202, Method 208
- Terminal Connections: See Diagram
- Weight: 0.002 grams (Approximate)
Equivalent Circuit (Note 5)
Top View
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| DMG1012T | Diodes | SOT523 |
| DMG1012T-7 | Diodes Incorporated | SOT-523 |
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