IPT015N10N5

N-channel Power MOSFET

The IPT015N10N5 is a n-channel power mosfet from Infineon Technologies. View the full IPT015N10N5 datasheet below including key specifications.

Official IPT015N10N5 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

IPT015N10N5 Key Specifications

Parameter	Value
Packaging	Reel
Package Width	9.70 mm to 10.10 mm
Package Height	2.20 mm to 2.40 mm
Package Length	10.28 mm to 10.58 mm
Total Gate Charge (Qg)	169 nC
On-Resistance (Rds(On))	1.5 mΩ
Power Dissipation (Ptot)	375 W
Gate-Source Voltage (Vgs)	-20 V to 20 V
Drain-Source Voltage (Vds)	100 V
Operating Temperature Range	-55 °C to 175 °C
Continuous Drain Current (Id)	300 A

IPT015N10N5 Overview

Part: IPT015N10N5 — Infineon Technologies

Type: N-Channel Power MOSFET (OptiMOS 5)

Description: 100 V N-channel OptiMOS 5 power MOSFET with 1.5 mΩ max RDS(on) at VGS = 10 V, 353 A continuous drain current and 169 nC typical gate charge in a PG-HSOF-8 package.

Operating Conditions:

Supply voltage: not applicable
Operating temperature: -55 to 175 °C (Tj, Tstg)
Gate-source voltage: ±20 V
Drain-source voltage: 100 V

Absolute Maximum Ratings:

Max drain-source voltage: 100 V (V(BR)DSS min)
Max gate-source voltage: ±20 V
Max continuous drain current: 353 A (VGS = 10 V, TC = 25 °C); 250 A at TC = 100 °C
Max pulsed drain current: 1412 A (TC = 25 °C)
Single-pulse avalanche energy: 775 mJ (ID = 150 A, RGS = 25 Ω)
Power dissipation: 375 W (TC = 25 °C)
Max junction/storage temperature: 175 °C

Key Specs:

RDS(on): 1.3 mΩ typ / 1.5 mΩ max (VGS = 10 V, ID = 150 A); 1.6 mΩ typ / 2.0 mΩ max (VGS = 6 V, ID = 75 A)
Gate threshold voltage: 2.2–3.8 V (VDS = VGS, ID = 280 μA), 3.0 V typ
IDSS: 0.1 μA typ / 5 μA max at Tj = 25 °C; 10 μA typ / 100 μA max at Tj = 125 °C (VDS = 100 V)
Total gate charge Qg: 169 nC typ / 211 nC max (VDD = 50 V, ID = 100 A, VGS = 0–10 V)
Qgd: 34 nC typ / 51 nC max; Qoss: 213 nC typ / 284 nC max
Ciss: 12000 pF typ; Coss: 1800 pF typ; Crss: 80 pF typ (VDS = 50 V, 1 MHz)
Switching times (VDD = 50 V, ID = 100 A, RG,ext = 1.8 Ω): td(on) 36 ns, tr 30 ns, td(off) 85 ns, tf 30 ns
Thermal resistance: RthJC 0.2 K/W typ / 0.4 K/W max; RthJA 62 K/W (minimal footprint), 40 K/W (6 cm² cooling area)
Body diode: VSD 0.85 V typ / 1.2 V max (IF = 100 A); trr 103 ns typ; Qrr 316 nC typ

Features:

Ideal for high-frequency switching and synchronous rectification
Excellent gate charge × RDS(on) product (FOM)
Very low on-resistance
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC for target applications
Halogen-free according to IEC61249-2-21

Applications:

High-frequency switching
Synchronous rectification

Package:

PG-HSOF-8 (marking 015N10N5)

IPT015N10N5 Features

·-Ideal-for-high-frequency-switching-and-sync.-rec.
·-Excellent-gate-charge-xR DS(on)-product-(FOM)
·-Very-low-on-resistance--RDS(on)
·-N-channel,-normal-level
·-100%-avalanche-tested
·-Pb-free-plating;-RoHS-compliant
·-Qualified-according-to-JEDEC 1) --for-target-applications
·-Halogen-free-according-to-IEC61249-2-21

IPT015N10N5 Thermal Information

Parameter	Symbol	Values - Min.	Values - Typ.	Values - Max.	Unit	Note/TestCondition
Thermal resistance, junction - case	R thJC	-	0.2	0.4	K/W	-
Device on PCB, minimal footprint	R thJA	-	-	62	K/W	-
Device on PCB, 6 cm² cooling area 2)	R thJA	-	-	40	K/W	-

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2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
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SI2337DS – Vishay Intertechnology, P-Channel Power MOSFET

All MOSFETs datasheets All Infineon Technologies datasheets (140)

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