IPT015N10N5

Part: IPT015N10N5 — Infineon Technologies AG

Type: N-channel Power MOSFET

Description: 100 V, 1.5 mΩ, 300 A N-channel power MOSFET ideal for high-frequency switching and synchronous rectification.

Operating Conditions:

• Gate-source voltage: -20 to 20 V
• Operating temperature: -55 to 175 °C
• Max drain-source voltage: 100 V

Absolute Maximum Ratings:

• Max drain-source voltage: 100 V
• Max continuous drain current: 300 A (VGS=10 V, TC=25 °C)
• Max junction/storage temperature: 175 °C

Key Specs:

• Drain-source breakdown voltage: V(BR)DSS = 100 V (VGS=0 V, ID=1 mA)
• Gate threshold voltage: VGS(th) = 2.2 V (min), 3.0 V (typ), 3.8 V (max) (VDS=VGS, ID=280 μA)
• Drain-source on-state resistance: RDS(on) = 1.3 mΩ (typ), 1.5 mΩ (max) (VGS=10 V, ID=150 A)
• Input capacitance: Ciss = 12000 pF (typ), 16000 pF (max) (VGS=0 V, VDS=50 V, f=1 MHz)
• Total gate charge: Qg = 169 nC (typ), 211 nC (max) (VDD=50 V, ID=100 A, VGS=0 to 10 V)
• Reverse diode continuous forward current: IS = 300 A (max)
• Thermal resistance, junction - case: RthJC = 0.2 K/W (typ), 0.4 K/W (max)

Features:

• Ideal for high-frequency switching and sync. rec.
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance, RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC for target applications
• Halogen-free according to IEC61249-2-21

Package:

• PG-HSOF-8-1

• ·-Ideal-for-high-frequency-switching-and-sync.-rec.
• ·-Excellent-gate-charge-xR DS(on)-product-(FOM)
• ·-Very-low-on-resistance--RDS(on)
• ·-N-channel,-normal-level
• ·-100%-avalanche-tested
• ·-Pb-free-plating;-RoHS-compliant
• ·-Qualified-according-to-JEDEC 1) --for-target-applications
• ·-Halogen-free-according-to-IEC61249-2-21

IPT015N10N5