IRLML2803TRPBF

N-Channel Power MOSFET

The IRLML2803TRPBF is a n-channel power mosfet from Infineon Technologies. View the full IRLML2803TRPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official IRLML2803TRPBF datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

IRLML2803TRPBF Key Specifications

Parameter	Value
Continuous Drain Current	1.2A (Ta)
Drain-Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg)	5 nC @ 10 V
Input Capacitance (Ciss)	85 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max)	540mW (Ta)
Rds(on)	250mOhm @ 910mA, 10V Ω
Supplier Device Package	Micro3™/SOT-23
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	1V @ 250µA

IRLML2803TRPBF Overview

Part: IRLML2803TRPbF — Infineon Technologies (International Rectifier)

Type: N-Channel HEXFET Power MOSFET

Description: 30 V, 0.25 Ω (max, VGS = 10 V) N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with 1.2 A continuous drain current.

Operating Conditions:

Supply voltage: not applicable (VDSS = 30 V; VGS ±20 V max)
Operating temperature: -55 to +150 °C (junction and storage range)
Continuous drain current: 1.2 A at TA = 25 °C, VGS = 10 V

Absolute Maximum Ratings:

Drain-to-source voltage (VDSS): 30 V
Gate-to-source voltage: ±20 V
Continuous drain current: 1.2 A (TA = 25 °C), 0.93 A (TA = 70 °C)
Pulsed drain current: 7.3 A
Power dissipation: 540 mW (TA = 25 °C)
Junction and storage temperature: -55 to +150 °C

Key Specs:

V(BR)DSS: 30 V min (VGS = 0 V, ID = 250 μA)
RDS(on): 0.25 Ω max (VGS = 10 V, ID = 0.91 A); 0.40 Ω max (VGS = 4.5 V, ID = 0.46 A)
VGS(th): 1.0 V min (VDS = VGS, ID = 250 μA)
IDSS: 1.0 μA max (VDS = 24 V, VGS = 0 V); 25 μA max at TJ = 125 °C
Qg: 3.3 nC typ, 5.0 nC max (ID = 0.91 A, VDS = 24 V, VGS = 10 V)
Switching (VDD = 15 V, ID = 0.91 A, RG = 6.2 Ω): td(on) 3.9 ns, tr 4.0 ns, td(off) 9.0 ns, tf 1.7 ns (typ)
Ciss / Coss / Crss: 85 / 34 / 15 pF typ (VGS = 0 V, VDS = 25 V, f = 1.0 MHz)
RθJA: 230 °C/W max
Body diode VSD: 1.2 V max (IS = 0.91 A, VGS = 0 V)

Features:

Fifth generation HEXFET technology
Ultra low on-resistance
Fast switching
SOT-23 footprint, low profile (<1.1 mm)
Available in tape and reel
Lead-free, RoHS compliant, halogen-free
MSL1 (Consumer qualification level)

Applications:

Portable electronics
PCMCIA cards
Space-constrained PCB designs

Package:

Micro3 (SOT-23 / TO-236AB), tape and reel, 3000 pcs per reel

IRLML2803TRPBF Electrical Characteristics

	Parameter	Min.	Typ.	Max.	Units	Conditions
V (BR)DSS	Drain-to-Source Breakdown Voltage	30			V	V GS = 0V, I D = 250A
∆ V (BR)DSS / ∆ T J	Breakdown Voltage Temp. Coefficient		0.029		V/C	Reference to 25C, I D = 1mA
R DS(on)	Static Drain-to-Source On-Resistance			0.25	Ω	V GS = 10V, I D = 0.91A
R DS(on)	Static Drain-to-Source On-Resistance			0.40	Ω	V GS = 4.5V, I D = 0.46A
V GS(th)	Gate Threshold Voltage	1.0			V	V DS = V GS , I D = 250A
g fs	Forward ← Transconductance	0.87			S	V DS = 10V, I D = 0.46A
I DSS	Drain-to-Source Leakage Current			1.0	A	V DS = 24V, V GS = 0V
I DSS	Drain-to-Source Leakage Current			25	A	V DS = 24V, V GS = 0V, T J = 125C
I GSS	Gate-to-Source Forward Leakage			-100	nA	V GS = -20V
I GSS	Gate-to-Source Reverse Leakage			100	nA	V GS = 20V
Q g	Total Gate Charge		3.3	5.0	nC	I D = 0.91A
Q gs	Gate-to-Source Charge		0.48	0.72	nC	V DS = 24V
Q gd	Gate-to-Drain ("Miller") Charge		1.1	1.7	nC	V GS = 10V, See Fig. 6 and 9
t d(on)	Turn-On Delay Time		3.9		ns	V DD = 15V
t r	Rise ← Time		4.0		ns	I D = 0.91A
t d(off)	Turn-Off Delay Time		9.0		ns	R G = 6.2 Ω
t f	Fall ← Time		1.7		ns	R D = 16 Ω, See Fig. 10
C iss	Input ← Capacitance		85		pF	V GS = 0V
C oss	Output ← Capacitance		34			V DS = 25V
C rss	Reverse Transfer Capacitance		15			= 1.0MHz, See Fig. 5

IRLML2803TRPBF Absolute Maximum Ratings

	Parameter	Max.	Units
I D @T A = 25°C	Continuous Drain Current, V GS @10V	1.2	A
I D @T A = 70°C	Continuous Drain Current, V GS @10V	0.93	A
I DM	Pulsed Drain Current	7.3	A
P D @T A = 25°C	Power Dissipation	540	mW
	Linear Derating Factor	4.3	mW/°C
V GS	Gate-to-Source Voltage	±20	V
E AS	/c99 Single Pulse Avalanche Energy	3.9	mJ
dv/dt	Peak diode Recovery dv/dt	5.0	V/ns
T J , T STG	Junction and Storage Temperature Range	-55 to + 150	°C

IRLML2803TRPBF Thermal Information

	Parameter	Typ.	Max.	Units
R θ JA	Maximum Junction-to-Ambient	---	230	°C/W

/c100

/c103

/c102

IRLML2803TRPBF Package Information

Dimensions are shown in millimeters (inches)

[.075]

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