Skip to main content

IRLML2803PBF

N-Channel Power MOSFET

The IRLML2803PBF is a n-channel power mosfet from International Rectifier. View the full IRLML2803PBF datasheet below including absolute maximum ratings.

Manufacturer

International Rectifier

Category

MOSFETs

Overview

Part: IRLML2803TRPbF — International Rectifier

Type: N-Channel HEXFET® Power MOSFET

Description: A 30V N-Channel HEXFET® Power MOSFET featuring ultra-low on-resistance (0.25 Ω), fast switching, and a low-profile SOT-23 package, designed for efficient and reliable operation in a wide variety of applications.

Operating Conditions:

  • Operating temperature: -55 to +150 °C (Junction and Storage)
  • Gate-to-Source Voltage: ±20 V

Absolute Maximum Ratings:

  • Max supply voltage: 30 V (Drain-to-Source)

Absolute Maximum Ratings

ParameterMax.Units
I D @T A = 25°CContinuous Drain Current, V GS @10V1.2A
I D @T A = 70°CContinuous Drain Current, V GS @10V0.93A
I DMPulsed Drain Current7.3A
P D @T A = 25°CPower Dissipation540mW
Linear Derating Factor4.3mW/°C
V GSGate-to-Source Voltage±20V
E AS/c99 Single Pulse Avalanche Energy3.9mJ
dv/dtPeak diode Recovery dv/dt5.0V/ns
T J , T STGJunction and Storage Temperature Range-55 to + 150°C

Thermal Information

ParameterTyp.Max.Units
R θ JAMaximum Junction-to-Ambient---230°C/W

/c100

/c103

/c102

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
IRLML2502TRPBF
IRLML2803International Rectifier
IRLML2803TRPBFInfineon TechnologiesTO-236-3, SC-59, SOT-23-3
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free