IRLML2502TRPBF
The IRLML2502TRPBF is an electronic component. View the full IRLML2502TRPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
IRLML2502TRPBF shares its datasheet with IRLML2803TRPBF, whose page lists every part number it covers.
Official IRLML2502TRPBF datasheet (PDF) — the source this page was extracted from.
IRLML2502TRPBF Key Specifications
| Parameter | Value |
|---|---|
| V(BR)DSS | 30 V min (VGS = 0 V, ID = 250 μA) |
| RDS(on) | 0.25 Ω max (VGS = 10 V, ID = 0.91 A); 0.40 Ω max (VGS = 4.5 V, ID = 0.46 A) |
| VGS(th) | 1.0 V min (VDS = VGS, ID = 250 μA) |
| IDSS | 1.0 μA max (VDS = 24 V, VGS = 0 V); 25 μA max at TJ = 125 °C |
| Qg | 3.3 nC typ, 5.0 nC max (ID = 0.91 A, VDS = 24 V, VGS = 10 V) |
| Switching (VDD = 15 V, ID = 0.91 A, RG = 6.2 Ω) | td(on) 3.9 ns, tr 4.0 ns, td(off) 9.0 ns, tf 1.7 ns (typ) |
| Ciss / Coss / Crss | 85 / 34 / 15 pF typ (VGS = 0 V, VDS = 25 V, f = 1.0 MHz) |
| RθJA | 230 °C/W max |
| Body diode VSD | 1.2 V max (IS = 0.91 A, VGS = 0 V) |
IRLML2502TRPBF Overview
Part: IRLML2803TRPbF — Infineon Technologies (International Rectifier)
Type: N-Channel HEXFET Power MOSFET
Description: 30 V, 0.25 Ω (max, VGS = 10 V) N-channel HEXFET power MOSFET in a Micro3 (SOT-23) package with 1.2 A continuous drain current.
Operating Conditions:
- Supply voltage: not applicable (VDSS = 30 V; VGS ±20 V max)
- Operating temperature: -55 to +150 °C (junction and storage range)
- Continuous drain current: 1.2 A at TA = 25 °C, VGS = 10 V
Absolute Maximum Ratings:
- Drain-to-source voltage (VDSS): 30 V
- Gate-to-source voltage: ±20 V
- Continuous drain current: 1.2 A (TA = 25 °C), 0.93 A (TA = 70 °C)
- Pulsed drain current: 7.3 A
- Power dissipation: 540 mW (TA = 25 °C)
- Junction and storage temperature: -55 to +150 °C
Key Specs:
- V(BR)DSS: 30 V min (VGS = 0 V, ID = 250 μA)
- RDS(on): 0.25 Ω max (VGS = 10 V, ID = 0.91 A); 0.40 Ω max (VGS = 4.5 V, ID = 0.46 A)
- VGS(th): 1.0 V min (VDS = VGS, ID = 250 μA)
- IDSS: 1.0 μA max (VDS = 24 V, VGS = 0 V); 25 μA max at TJ = 125 °C
- Qg: 3.3 nC typ, 5.0 nC max (ID = 0.91 A, VDS = 24 V, VGS = 10 V)
- Switching (VDD = 15 V, ID = 0.91 A, RG = 6.2 Ω): td(on) 3.9 ns, tr 4.0 ns, td(off) 9.0 ns, tf 1.7 ns (typ)
- Ciss / Coss / Crss: 85 / 34 / 15 pF typ (VGS = 0 V, VDS = 25 V, f = 1.0 MHz)
- RθJA: 230 °C/W max
- Body diode VSD: 1.2 V max (IS = 0.91 A, VGS = 0 V)
Features:
- Fifth generation HEXFET technology
- Ultra low on-resistance
- Fast switching
- SOT-23 footprint, low profile (<1.1 mm)
- Available in tape and reel
- Lead-free, RoHS compliant, halogen-free
- MSL1 (Consumer qualification level)
Applications:
- Portable electronics
- PCMCIA cards
- Space-constrained PCB designs
Package:
- Micro3 (SOT-23 / TO-236AB), tape and reel, 3000 pcs per reel
IRLML2502TRPBF Electrical Characteristics
| Parameter | Min. | Typ. | Max. | Units | Conditions | |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-to-Source Breakdown Voltage | 30 | V | V GS = 0V, I D = 250A | ||
| ∆ V (BR)DSS / ∆ T J | Breakdown Voltage Temp. Coefficient | 0.029 | V/C | Reference to 25C, I D = 1mA | ||
| R DS(on) | Static Drain-to-Source On-Resistance | 0.25 | Ω | V GS = 10V, I D = 0.91A | ||
| R DS(on) | Static Drain-to-Source On-Resistance | 0.40 | Ω | V GS = 4.5V, I D = 0.46A | ||
| V GS(th) | Gate Threshold Voltage | 1.0 | V | V DS = V GS , I D = 250A | ||
| g fs | Forward ← Transconductance | 0.87 | S | V DS = 10V, I D = 0.46A | ||
| I DSS | Drain-to-Source Leakage Current | 1.0 | A | V DS = 24V, V GS = 0V | ||
| I DSS | Drain-to-Source Leakage Current | 25 | A | V DS = 24V, V GS = 0V, T J = 125C | ||
| I GSS | Gate-to-Source Forward Leakage | -100 | nA | V GS = -20V | ||
| I GSS | Gate-to-Source Reverse Leakage | 100 | nA | V GS = 20V | ||
| Q g | Total Gate Charge | 3.3 | 5.0 | nC | I D = 0.91A | |
| Q gs | Gate-to-Source Charge | 0.48 | 0.72 | nC | V DS = 24V | |
| Q gd | Gate-to-Drain ("Miller") Charge | 1.1 | 1.7 | nC | V GS = 10V, See Fig. 6 and 9 | |
| t d(on) | Turn-On Delay Time | 3.9 | ns | V DD = 15V | ||
| t r | Rise ← Time | 4.0 | ns | I D = 0.91A | ||
| t d(off) | Turn-Off Delay Time | 9.0 | ns | R G = 6.2 Ω | ||
| t f | Fall ← Time | 1.7 | ns | R D = 16 Ω, See Fig. 10 | ||
| C iss | Input ← Capacitance | 85 | pF | V GS = 0V | ||
| C oss | Output ← Capacitance | 34 | V DS = 25V | |||
| C rss | Reverse Transfer Capacitance | 15 | = 1.0MHz, See Fig. 5 |
IRLML2502TRPBF Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| I D @T A = 25°C | Continuous Drain Current, V GS @10V | 1.2 | A |
| I D @T A = 70°C | Continuous Drain Current, V GS @10V | 0.93 | A |
| I DM | Pulsed Drain Current | 7.3 | A |
| P D @T A = 25°C | Power Dissipation | 540 | mW |
| Linear Derating Factor | 4.3 | mW/°C | |
| V GS | Gate-to-Source Voltage | ±20 | V |
| E AS | /c99 Single Pulse Avalanche Energy | 3.9 | mJ |
| dv/dt | Peak diode Recovery dv/dt | 5.0 | V/ns |
| T J , T STG | Junction and Storage Temperature Range | -55 to + 150 | °C |
IRLML2502TRPBF Thermal Information
| Parameter | Typ. | Max. | Units | |
|---|---|---|---|---|
| R θ JA | Maximum Junction-to-Ambient | --- | 230 | °C/W |
/c100
/c103
/c102
IRLML2502TRPBF Package Information
Dimensions are shown in millimeters (inches)
A
[.075]
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Ask your AI agent about the IRLML2502TRPBF
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the IRLML2502TRPBF run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.