SSM3J338R

Part: SSM3J338R — Toshiba

Type: P-Channel Power MOSFET (Silicon P-Channel MOS)

Description: -12 V, -6 A P-channel MOSFET with 1.8 V gate drive and RDS(ON) of 15.9 mΩ (typ.) at VGS = -4.5 V, intended for power management switches.

Operating Conditions:

• Supply voltage: not applicable (VDSS = -12 V; VGS drive down to -1.8 V)
• Operating temperature: channel temperature up to 150 °C
• Gate drive: 1.8 V

Absolute Maximum Ratings:

• Drain-source voltage (VDSS): -12 V
• Gate-source voltage (VGSS): ±10 V
• Drain current (ID): -6 A; pulsed (IDP): -14 A (PW ≤ 10 ms, duty ≤ 1%)
• Power dissipation (PD): 1 W; 2 W for t ≤ 10 s (FR4 board, 25.4 × 25.4 × 1.6 mm, Cu pad 645 mm²)
• Max channel temperature: 150 °C
• Storage temperature: -55 to 150 °C

Key Specs:

• RDS(ON), ID = -6.0 A, VGS = -4.5 V: 15.9 mΩ typ., 20.2 mΩ max
• RDS(ON), ID = -6.0 A, VGS = -2.5 V: 20.1 mΩ typ., 27.9 mΩ max
• RDS(ON), ID = -4.5 A, VGS = -1.8 V: 26.3 mΩ typ., 45.3 mΩ max
• Gate threshold voltage Vth (VDS = -3 V, ID = -1 mA): -0.3 to -1.0 V
• IDSS (VDS = -12 V, VGS = 0 V): -1 μA max; IGSS (VGS = ±8 V): ±1 μA max
• Ciss / Coss / Crss (VDS = -6 V, f = 1 MHz): 1400 / 250 / 225 pF typ.
• Total gate charge Qg (VDD = -6 V, VGS = -4.5 V, ID = -6 A): 19.5 nC typ.
• Switching ton / toff (VDD = -6 V, ID = -6 A, RG = 10 Ω): 65 ns / 383 ns typ.
• Diode forward voltage (ID = 6 A, VGS = 0 V): 0.75 V typ., 1.1 V max
• Forward transfer admittance |Yfs| (VDS = -3 V, ID = -2 A): 17 S typ.

Features:

• 1.8 V gate drive voltage
• Low drain-source on-resistance

Applications:

• Power management switches

Package:

• (1) 1.8 V gate drive voltage.
• (2) Low drain-source on-resistance

: RDS(ON) = 26.3 m Ω (typ.) (@VGS = -1.8 V)

RDS(ON) = 20.1 m Ω (typ.) (@VGS = -2.5 V)

RDS(ON) = 15.9 m Ω (typ.) (@VGS = -4.5 V)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Ensure that the channel temperature does not exceed 150

Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%

Note 3: Device mounted on a FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm 2 )

Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge.

Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account.

Weight: 0.011 g (typ.)