C52895

Part: BSS138 — Fairchild Type: N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description: A 0.22 A, 50 V N-Channel logic level enhancement mode MOSFET with 3.5 Ω on-resistance at VGS=10V, designed for low voltage, low current switching applications.

Operating Conditions:

• Drain-Source Voltage: 50 V
• Gate-Source Voltage: ±20 V
• Operating temperature: -55 to +150 °C

Absolute Maximum Ratings:

• Max supply voltage (Drain-Source): 50 V
• Max continuous current (Drain): 0.22 A
• Max junction/storage temperature: +150 °C

Key Specs:

• Drain-Source Breakdown Voltage (BV_DSS): 50 V (V_GS = 0 V, I_D = 250 μA)
• Zero Gate Voltage Drain Current (I_DSS): V_DS = 50 V, V_GS = 0 V
• Gate Threshold Voltage (V_GS(th)): V_DS = V_GS, I_D = 1 mA
• Static Drain-Source On-Resistance (R_DS(on)): 3.5 Ω (V_GS = 10 V, I_D = 0.22 A)
• Static Drain-Source On-Resistance (R_DS(on)): 6.0 Ω (V_GS = 4.5 V, I_D = 0.22 A)
• Forward Transconductance (g_FS): V_DS = 10V, I_D = 0.22 A
• Drain-Source Diode Forward Voltage (V_SD): V_GS = 0 V, I_S = 0.44 A

Features:

• 0.22 A, 50 V. R_DS(ON) = 3.5 Ω @ V_GS = 10 V R_DS(ON) = 6.0 Ω @ V_GS = 4.5 V
• High density cell design for extremely low R_DS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount package

Applications:

• Low voltage, low current applications
• Small servo motor control
• Power MOSFET gate drivers
• Other switching applications

Package:

• SOT-23

• 0.22 A, 50 V. RDS(ON) = 3.5 Ω @ VGS = 10 V RDS(ON) = 6.0 Ω @ VGS = 4.5 V
• High density cell design for extremely low R DS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount package

TA=25 o C unless otherwise noted