BSS138

Product Summary

Manufacturer

infineon

Overview

Part: BSS138 from Diodes Incorporated

Type: N-CHANNEL ENHANCEMENT MODE MOSFET

Key Specs:

Drain-Source Voltage (BVDSS): 50V
On-Resistance (RDS(ON)): 3.5Ω @ VGS = 10V
Drain Current (ID): 200mA @ TA = +25°C
Gate Threshold Voltage (VGS(TH)): 0.5V (Min) to 1.5V (Max)
Power Dissipation (PD): 300 mW

Features:

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. "Green" Device
Qualified to JEDEC standards (as references in AEC-Q) for High Reliability

Applications:

High-efficiency power-management applications
Systems/load switches

Package:

SOT23: dimensions not specified

Features

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.

https://www.diodes.com/quality/product-definitions/

• An automotive-compliant part is available under separate datasheet (BSS138Q)

Applications

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

• Systems/load switches

Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage	BVDSS	50	75	⎯	V	VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current	IDSS	⎯	⎯	0.5	μA	VDS = 50V, VGS = 0V
Gate-Body Leakage	IGSS	⎯	⎯	100	nA	VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage	VGS(TH)	0.5	1.2	1.5	V	VDS = VGS, ID = 250A
Static Drain-Source On-Resistance	RDS(ON)	⎯	1.4	3.5	Ω	VGS = 10V, ID = 0.22A
Forward Transconductance	gFS	100	⎯	⎯	mS	VDS = 25V, ID = 0.2A, f = 1.0kHz
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance	Ciss	⎯	⎯	50	pF
Output Capacitance	Coss	⎯	⎯	25	pF	VDS = 10V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance	Crss	⎯	⎯	8.0	pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time	tD(ON)	⎯	⎯	20	ns
Turn-Off Delay Time	tD(OFF)	⎯	⎯	20	ns	VDD = 30V, ID = 0.2A, RGEN = 50Ω
Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Incorporated's suggested pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.

^6. Short duration pulse test used to minimize self-heating effect.

^7. Guarantee by design. Not subject to production testing.

Fig. 3 Drain-Source On-Resistance vs. Junction Temperature

Fig. 5 Drain-Source On-Resistance vs. Drain-Current

TJ, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Variation vs. Junction Temperature

Fig. 6 Drain-Source On-Resistance vs. Drain-Current

Fig. 7 Drain-Source On-Resistance vs. Drain-Current

www.diodes.com

Absolute Maximum Ratings

Characteristic	Symbol	Value	Unit
Drain-Source Voltage	VDSS	50	V
Drain-Gate Voltage RGS  20kΩ	VDGR	50	V
Gate-Source Voltage Continuous		20	V
Gate-Source Voltage Non Repetitive, Pulse Width<50s	VGSS	40	V
Drain Current Continuous	ID	200	mA
Pulsed Drain Current (10μs Pulse Duty Cycle = 1%)	IDM	1	A

Thermal Information

Characteristic	Symbol	Value	Unit
Power Dissipation (Note 5)	PD	300	mW
Thermal Resistance, Junction to Ambient (Note 5)	RJA	417	C/W
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C

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