BSS138Q
N-Channel Logic Level Enhancement Mode Field Effect TransistorThe BSS138Q is a n-channel logic level enhancement mode field effect transistor from Infineon Technologies. View the full BSS138Q datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
BSS138Q shares its datasheet with BSS138, whose page lists every part number it covers.
Official BSS138Q datasheet (PDF) — the source this page was extracted from.
Manufacturer
Infineon TechnologiesCategory
MOSFETsBSS138Q Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 220mA (Ta) |
| Current - Continuous Drain(Id) | 220mA |
| Drain to Source Voltage | 50V |
| Drain-Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 2.4 nC @ 10 V |
| Gate Charge(Qg) | 2.4nC@25V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Input Capacitance (Ciss) | 27 pF @ 25 V |
| Input Capacitance(Ciss) | 27pF |
| Mounting Type | Surface Mount |
| Number | 1 N-channel |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Operating Temperature - | -55℃~+150℃ |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Reel |
| Packaging | MouseReel |
| Pd - Power Dissipation | 360mW |
| Power Dissipation (Max) | 350mW (Ta) |
| Rds(on) | 3Ohm @ 500mA, 10V Ω |
| RDS(on) | 3.5Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| Standard Pack Qty | 3000 |
| Standard Pack Qty | 3000 |
| Supplier Device Package | SOT-23-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 1.6V @ 250µA |
BSS138Q Overview
Part: BSS138 (also ordered as BSS138-G) — onsemi
Type: N-Channel Logic Level Enhancement Mode MOSFET
Description: 50 V, 0.22 A N-channel logic-level MOSFET with RDS(on) of 3.5 Ω max at VGS = 10 V, in a SOT-23-3 package.
Operating Conditions:
- Supply voltage: not applicable (discrete MOSFET); VDS up to 50 V, VGS up to ±20 V
- Operating temperature: -55 to +150 °C (operating and storage junction temperature range)
- Continuous drain current: 0.22 A (TA = 25 °C, minimum pad)
Absolute Maximum Ratings:
- Drain-source voltage (VDSS): 50 V
- Gate-source voltage (VGSS): ±20 V
- Continuous drain current (ID): 0.22 A; pulsed: 0.88 A
- Power dissipation (PD): 0.36 W (derate 2.8 mW/°C above 25 °C)
- Operating and storage junction temperature: -55 to +150 °C
- Lead soldering temperature: 300 °C (1/16" from case, 10 s)
Key Specs:
- BVDSS: 50 V min (VGS = 0 V, ID = 250 μA)
- RDS(on): 0.7 Ω typ / 3.5 Ω max (VGS = 10 V, ID = 0.22 A); 1.0 Ω typ / 6.0 Ω max (VGS = 4.5 V, ID = 0.22 A)
- VGS(th): 0.8 V min / 1.3 V typ / 1.5 V max (VDS = VGS, ID = 1 mA)
- IDSS: 0.5 μA max (VDS = 50 V, VGS = 0 V); 100 nA max (VDS = 30 V, VGS = 0 V)
- IGSS: ±100 nA max (VGS = ±20 V)
- Ciss / Coss / Crss: 27 / 13 / 6 pF typ (VDS = 25 V, f = 1 MHz)
- Total gate charge: 1.7 nC typ, 2.4 nC max (VDS = 25 V, ID = 0.22 A, VGS = 10 V)
- Switching (VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω): td(on) 2.5 ns typ, tr 9 ns typ, td(off) 20 ns typ, tf 7 ns typ
- Thermal resistance RθJA: 350 °C/W (minimum pad)
- Body diode VSD: 0.8 V typ / 1.4 V max (IS = 0.44 A)
Features:
- 0.22 A, 50 V
- High-density cell design for extremely low RDS(on)
- Rugged and reliable
- Compact industry-standard SOT-23 surface mount package
- Pb-free and halogen free
- HBM Class 0A, MM Class M2
Applications:
- Small servo motor control
- Power MOSFET gate drivers
- Low-voltage, low-current switching
Package:
- SOT-23-3 (TO-236, Case 318), 2.90 × 1.30 × 1.00 mm, 3000 / tape and reel
BSS138Q Features
- 0.22 A, 50 V
- ♦ RDS(on) = 3.5 W @ VGS = 10 V
- ♦ RDS(on) = 6.0 W @ VGS = 4.5 V
- Rugged and Reliable
- High Density Cell Design for Extremely Low RDS(on)
- Compact Industry Standard SOT -23 Surface Mount Package
- This Device is Pb -Free and Halogen Free
- HBM Class 0A, MM Class M2 (Note 3)
SOT -23 -3 CASE 318 -08
BSS138Q Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS |
| BV DSS | Drain-Source Breakdown Voltage | V GS = 0 V, I D = 250 m A | 50 | - | - | V |
| D V GS(th) D T J | Breakdown Voltage Temperature Coefficient | I D = 250 μ A, Referenced to 25 ° C | - | 72 | - | mV/ ° C |
| I DSS | Zero Gate Voltage Drain Current | V DS = 50 V, V GS = 0 V | - | - | 0.5 | m A |
| I DSS | V DS = 50 V, V GS = 0 V, T J = 125 ° C | - | - | 5 | m A | |
| I DSS | V DS = 30 V, V GS = 0 V | - | - | 100 | nA | |
| I GSS | Gate-Body Leakage | V GS = ± 20 V, V DS = 0 V | - | - | ± 100 | nA |
| ON CHARACTERISTICS | ON CHARACTERISTICS | ON CHARACTERISTICS | ON CHARACTERISTICS | ON CHARACTERISTICS | ON CHARACTERISTICS | ON CHARACTERISTICS |
| V GS(th) | Gate Threshold Voltage | V DS = V GS , I D = 1 mA | 0.8 | 1.3 | 1.5 | V |
| D V GS(th) D T J | Gate Threshold Voltage Temperature Coefficient | I D = 1 mA, Referenced to 25 ° C | - | -2 | - | mV/ ° C |
| R DS(on) | Static Drain-Source On-Resistance | V GS = 10 V, I D = 0.22 A | - | 0.7 | 3.5 | W |
| R DS(on) | V GS = 4.5 V, I D = 0.22 A | - | 1.0 | 6.0 | W | |
| R DS(on) | V GS = 10 V, I D = 0.22 A, T J = 125 ° C | - | 1.1 | 5.8 | ||
| I D(on) | On-State Drain Current | V GS = 10 V, V DS = 5 V | 0.2 | - | - | A |
| g FS | Forward Transconductance | V DS = 10 V, I D = 0.22 A | 0.12 | 0.5 | - | S |
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS |
| C iss | Input Capacitance | V DS = 25 V, V GS = 0 V, f = 1.0 MHz | - | 27 | - | pF |
| C oss | Output Capacitance | V DS = 25 V, V GS = 0 V, f = 1.0 MHz | - | 13 | - | pF |
| C rss | Reverse Transfer Capacitance | V DS = 25 V, V GS = 0 V, f = 1.0 MHz | - | 6 | - | pF |
| R G | Gate Resistance | V GS = 15 mV, f = 1.0 MHz | - | 9 | - | W |
BSS138Q Absolute Maximum Ratings
| Symbol | Parameter | Ratings | Unit |
|---|---|---|---|
| V DSS | Drain - Source Voltage | 50 | V |
| V GSS | Gate - Source Voltage | ± 20 | V |
| I D | Drain Current - Continuous (Note 1) | 0.22 | A |
| I D | Drain Current - Pulsed (Note 1) | 0.88 | A |
| P D | Maximum Power Dissipation (Note 1) | 0.36 | W |
| P D | Derate Above 25 ° C | 2.8 | mW/ ° C |
| T J , T STG | Operating and Storage Junction Temperature Range | - 55 to +150 | ° C |
| T L | Maximum Lead Temperature for Soldering Purposes, 1/16' from Case for 10 s | 300 | ° C |
BSS138Q Thermal Information
| Symbol | Parameter | Ratings | Unit |
|---|---|---|---|
| R q JA | Thermal Resistance, Junction - to - Ambient (Note 1) | 350 | ° C/W |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- STL110N10F7 – STMicroelectronics, N-channel Power MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
All MOSFETs datasheetsAll Infineon Technologies datasheets (140)
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