BSS138-13-F
N-Channel Logic Level Enhancement Mode Field Effect TransistorThe BSS138-13-F is a n-channel logic level enhancement mode field effect transistor from Infineon Technologies. View the full BSS138-13-F datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
Infineon Technologies
Category
MOSFETsKey Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 220mA (Ta) |
| Drain-Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 2.4 nC @ 10 V |
| Input Capacitance (Ciss) | 27 pF @ 25 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | MouseReel |
| Packaging | MouseReel |
| Power Dissipation (Max) | 350mW (Ta) |
| Rds(on) | 3Ohm @ 500mA, 10V Ω |
| Standard Pack Qty | 3000 |
| Standard Pack Qty | 3000 |
| Supplier Device Package | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 1.6V @ 250µA |
Overview
Part: BSS138 from Diodes Incorporated
Type: N-Channel Enhancement Mode MOSFET
Description: 50V, 200mA N-Channel Enhancement Mode MOSFET with 3.5Ω maximum on-resistance, designed for high-efficiency power-management applications.
Operating Conditions:
- Supply voltage: not applicable
- Operating temperature: -55 to +150 °C
- Gate threshold voltage: 0.5V to 1.5V
Absolute Maximum Ratings:
- Max drain-source voltage: 50 V
- Max continuous drain current: 200 mA
- Max junction/storage temperature: +150 °C
Key Specs:
- Drain-Source Breakdown Voltage (BV DSS): 50 V (min) at V GS = 0V, I D = 250 μA
- Zero Gate Voltage Drain Current (I DSS): 0.5 μA (max) at V DS = 50V, V GS = 0V
- Gate Threshold Voltage (V GS(TH)): 0.5 V (min), 1.5 V (max) at V DS = V GS, I D = 250 μA
- Static Drain-Source On-Resistance (R DS(ON)): 3.5 Ω (max) at V GS = 10V, I D = 0.22A
- Input Capacitance (C iss): 50 pF (max) at V DS = 10V, V GS = 0V, f = 1.0MHz
- Turn-On Delay Time (t D(ON)): 20 ns (max) at V DD = 30V, I D = 0.2A, R GEN = 50Ω
Features:
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. 'Green' Device
- Qualified to JEDEC standards for High Reliability.
Applications:
- Systems/load switches
Package:
- SOT23
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. 'Green' Device (Note 3)
- This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
- https://www.diodes.com/quality/product-definitions/
- An automotive-compliant part is available under separate datasheet (BSS138Q)
Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
- Systems/load switches
K38 = Product Type Marking Code YM = Date Code Marking Y or Y or Y= Year (ex: L = 2024) M or M = Month (ex: 9 = September)
| Year | 2003 | … | 2024 | 2025 | 2026 | 2027 | 2028 | 2029 | 2030 | 2031 | 2032 | 2033 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Code | P | … | L | M | N | P | R | S | T | U | V | W |
| Month | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec |
| Code | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | O | N | D |
BSS138
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 6) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | 50 | 75 | ⎯ | V | V GS = 0V, I D = 250 A |
| Zero Gate Voltage Drain Current | I DSS | ⎯ | ⎯ | 0.5 | μA | V DS = 50V, V GS = 0V |
| Gate-Body Leakage | I GSS | ⎯ | ⎯ | 100 | nA | V GS = 20V, V DS = 0V |
| ON CHARACTERISTICS (Note 6) | ||||||
| Gate Threshold Voltage | V GS(TH) | 0.5 | 1.2 | 1.5 | V | V DS = V GS , I D = 250 A |
| Static Drain-Source On-Resistance | R DS(ON) | ⎯ | 1.4 | 3.5 | Ω | V GS = 10V, I D = 0.22A |
| Forward Transconductance | g FS | 100 | ⎯ | ⎯ | mS | V DS = 25V, I D = 0.2A, f = 1.0kHz |
| DYNAMIC CHARACTERISTICS (Note 7) | ||||||
| Input Capacitance | C iss | ⎯ | ⎯ | 50 | pF | V DS = 10V, V GS = 0V, f = 1.0MHz |
| Output Capacitance | C oss | ⎯ | ⎯ | 25 | pF | V DS = 10V, V GS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | C rss | ⎯ | ⎯ | 8.0 | pF | V DS = 10V, V GS = 0V, f = 1.0MHz |
| SWITCHING CHARACTERISTICS (Note 7) | ||||||
| Turn-On Delay Time | t D(ON) | ⎯ | ⎯ | 20 | ns | V DD = 30V, I D = 0.2A, R GEN = 50Ω |
| Turn-Off Delay Time | t D(OFF) | ⎯ | ⎯ | 20 | ns | V DD = 30V, I D = 0.2A, R GEN = 50Ω |
Absolute Maximum Ratings
| Characteristic | Characteristic | Symbol | Value | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | Drain-Source Voltage | V DSS | 50 | V |
| Drain-Gate Voltage R GS 20kΩ | Drain-Gate Voltage R GS 20kΩ | V DGR | 50 | V |
| Gate-Source Voltage | Continuous | V GSS | 20 | V |
| Gate-Source Voltage | Non Repetitive, Pulse Width<50 s | V GSS | 40 | V |
| Drain Current | Continuous | I D | 200 | mA |
| Pulsed Drain Current (10μs Pulse Duty Cycle = 1%) | Pulsed Drain Current (10μs Pulse Duty Cycle = 1%) | I DM | 1 | A |
Thermal Information
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation (Note 5) | P D | 300 | mW |
| Thermal Resistance, Junction to Ambient (Note 5) | R JA | 417 | C/W |
| Operating and Storage Temperature Range | T J , T STG | -55 to +150 | C |
Package Information
- Package: SOT23
- Package Material: Molded Plastic. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
- Terminal Connections: See Diagram
- Weight: 0.008 grams (Approximate)
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| BSS138 | onsemi | TO-236-3, SC-59, SOT-23-3 |
| BSS138-7-F | Infineon Technologies | — |
| BSS138Q | Infineon Technologies | — |
| BSS138Q.PDF | Infineon Technologies | — |
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