BSS138-13-F
N-Channel Logic Level Enhancement Mode Field Effect TransistorThe BSS138-13-F is a n-channel logic level enhancement mode field effect transistor from Diodes Incorporated. View the full BSS138-13-F datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
BSS138-13-F shares its datasheet with BSS138, whose page lists every part number it covers.
Official BSS138-13-F datasheet (PDF) — the source this page was extracted from.
Manufacturer
Diodes IncorporatedCategory
MOSFETsBSS138-13-F Key Specifications
| Parameter | Value |
|---|---|
| Packaging | MouseReel |
| Standard Pack Qty | 10000 |
| Continuous Drain Current | 220mA (Ta) |
| Current - Continuous Drain(Id) | 220mA |
| Drain to Source Voltage | 50V |
| Drain-Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 2.4 nC @ 10 V |
| Gate Charge(Qg) | 2.4nC@25V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Input Capacitance (Ciss) | 27 pF @ 25 V |
| Input Capacitance(Ciss) | 27pF |
| Mounting Type | Surface Mount |
| Number | 1 N-channel |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Operating Temperature - | -55℃~+150℃ |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Pd - Power Dissipation | 360mW |
| Power Dissipation (Max) | 350mW (Ta) |
| Rds(on) | 3Ohm @ 500mA, 10V Ω |
| RDS(on) | 3.5Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| Supplier Device Package | SOT-23-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 1.6V @ 250µA |
BSS138-13-F Overview
Part: BSS138 (also ordered as BSS138-G) — onsemi
Type: N-Channel Logic Level Enhancement Mode MOSFET
Description: 50 V, 0.22 A N-channel logic-level MOSFET with RDS(on) of 3.5 Ω max at VGS = 10 V, in a SOT-23-3 package.
Operating Conditions:
- Supply voltage: not applicable (discrete MOSFET); VDS up to 50 V, VGS up to ±20 V
- Operating temperature: -55 to +150 °C (operating and storage junction temperature range)
- Continuous drain current: 0.22 A (TA = 25 °C, minimum pad)
Absolute Maximum Ratings:
- Drain-source voltage (VDSS): 50 V
- Gate-source voltage (VGSS): ±20 V
- Continuous drain current (ID): 0.22 A; pulsed: 0.88 A
- Power dissipation (PD): 0.36 W (derate 2.8 mW/°C above 25 °C)
- Operating and storage junction temperature: -55 to +150 °C
- Lead soldering temperature: 300 °C (1/16" from case, 10 s)
Key Specs:
- BVDSS: 50 V min (VGS = 0 V, ID = 250 μA)
- RDS(on): 0.7 Ω typ / 3.5 Ω max (VGS = 10 V, ID = 0.22 A); 1.0 Ω typ / 6.0 Ω max (VGS = 4.5 V, ID = 0.22 A)
- VGS(th): 0.8 V min / 1.3 V typ / 1.5 V max (VDS = VGS, ID = 1 mA)
- IDSS: 0.5 μA max (VDS = 50 V, VGS = 0 V); 100 nA max (VDS = 30 V, VGS = 0 V)
- IGSS: ±100 nA max (VGS = ±20 V)
- Ciss / Coss / Crss: 27 / 13 / 6 pF typ (VDS = 25 V, f = 1 MHz)
- Total gate charge: 1.7 nC typ, 2.4 nC max (VDS = 25 V, ID = 0.22 A, VGS = 10 V)
- Switching (VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω): td(on) 2.5 ns typ, tr 9 ns typ, td(off) 20 ns typ, tf 7 ns typ
- Thermal resistance RθJA: 350 °C/W (minimum pad)
- Body diode VSD: 0.8 V typ / 1.4 V max (IS = 0.44 A)
Features:
- 0.22 A, 50 V
- High-density cell design for extremely low RDS(on)
- Rugged and reliable
- Compact industry-standard SOT-23 surface mount package
- Pb-free and halogen free
- HBM Class 0A, MM Class M2
Applications:
- Small servo motor control
- Power MOSFET gate drivers
- Low-voltage, low-current switching
Package:
- SOT-23-3 (TO-236, Case 318), 2.90 × 1.30 × 1.00 mm, 3000 / tape and reel
BSS138-13-F Features
- 0.22 A, 50 V
- ♦ RDS(on) = 3.5 W @ VGS = 10 V
- ♦ RDS(on) = 6.0 W @ VGS = 4.5 V
- Rugged and Reliable
- High Density Cell Design for Extremely Low RDS(on)
- Compact Industry Standard SOT -23 Surface Mount Package
- This Device is Pb -Free and Halogen Free
- HBM Class 0A, MM Class M2 (Note 3)
SOT -23 -3 CASE 318 -08
BSS138-13-F Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS | OFF CHARACTERISTICS |
| BV DSS | Drain-Source Breakdown Voltage | V GS = 0 V, I D = 250 m A | 50 | - | - | V |
| D V GS(th) D T J | Breakdown Voltage Temperature Coefficient | I D = 250 μ A, Referenced to 25 ° C | - | 72 | - | mV/ ° C |
| I DSS | Zero Gate Voltage Drain Current | V DS = 50 V, V GS = 0 V | - | - | 0.5 | m A |
| I DSS | V DS = 50 V, V GS = 0 V, T J = 125 ° C | - | - | 5 | m A | |
| I DSS | V DS = 30 V, V GS = 0 V | - | - | 100 | nA | |
| I GSS | Gate-Body Leakage | V GS = ± 20 V, V DS = 0 V | - | - | ± 100 | nA |
| ON CHARACTERISTICS | ON CHARACTERISTICS | ON CHARACTERISTICS | ON CHARACTERISTICS | ON CHARACTERISTICS | ON CHARACTERISTICS | ON CHARACTERISTICS |
| V GS(th) | Gate Threshold Voltage | V DS = V GS , I D = 1 mA | 0.8 | 1.3 | 1.5 | V |
| D V GS(th) D T J | Gate Threshold Voltage Temperature Coefficient | I D = 1 mA, Referenced to 25 ° C | - | -2 | - | mV/ ° C |
| R DS(on) | Static Drain-Source On-Resistance | V GS = 10 V, I D = 0.22 A | - | 0.7 | 3.5 | W |
| R DS(on) | V GS = 4.5 V, I D = 0.22 A | - | 1.0 | 6.0 | W | |
| R DS(on) | V GS = 10 V, I D = 0.22 A, T J = 125 ° C | - | 1.1 | 5.8 | ||
| I D(on) | On-State Drain Current | V GS = 10 V, V DS = 5 V | 0.2 | - | - | A |
| g FS | Forward Transconductance | V DS = 10 V, I D = 0.22 A | 0.12 | 0.5 | - | S |
| DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS | DYNAMIC CHARACTERISTICS |
| C iss | Input Capacitance | V DS = 25 V, V GS = 0 V, f = 1.0 MHz | - | 27 | - | pF |
| C oss | Output Capacitance | V DS = 25 V, V GS = 0 V, f = 1.0 MHz | - | 13 | - | pF |
| C rss | Reverse Transfer Capacitance | V DS = 25 V, V GS = 0 V, f = 1.0 MHz | - | 6 | - | pF |
| R G | Gate Resistance | V GS = 15 mV, f = 1.0 MHz | - | 9 | - | W |
BSS138-13-F Absolute Maximum Ratings
| Symbol | Parameter | Ratings | Unit |
|---|---|---|---|
| V DSS | Drain - Source Voltage | 50 | V |
| V GSS | Gate - Source Voltage | ± 20 | V |
| I D | Drain Current - Continuous (Note 1) | 0.22 | A |
| I D | Drain Current - Pulsed (Note 1) | 0.88 | A |
| P D | Maximum Power Dissipation (Note 1) | 0.36 | W |
| P D | Derate Above 25 ° C | 2.8 | mW/ ° C |
| T J , T STG | Operating and Storage Junction Temperature Range | - 55 to +150 | ° C |
| T L | Maximum Lead Temperature for Soldering Purposes, 1/16' from Case for 10 s | 300 | ° C |
BSS138-13-F Thermal Information
| Symbol | Parameter | Ratings | Unit |
|---|---|---|---|
| R q JA | Thermal Resistance, Junction - to - Ambient (Note 1) | 350 | ° C/W |
Other MOSFETs
- 20N06D – onsemi, Power MOSFET
- AO3400A – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- AO3400 – Alpha & Omega Semiconductor Inc., N-Channel MOSFET
- DMN2044UCB4-7 – Diodes Incorporated, N-Channel MOSFET
- 2N7002K – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- DMG3414U-7 – Diodes Incorporated, N-Channel Enhancement Mode MOSFET
- 2N7002 – Nexperia, N-channel Trench MOSFET
- ISC030N10NM6ATMA1 – Infineon Technologies, N-Channel Power MOSFET
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