BSS138Q

N-Channel Logic Level Enhancement Mode Field Effect Transistor

The BSS138Q is a n-channel logic level enhancement mode field effect transistor from Infineon Technologies. View the full BSS138Q datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Manufacturer

Infineon Technologies

Key Specifications

Parameter	Value
Continuous Drain Current	220mA (Ta)
Drain-Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg)	2.4 nC @ 10 V
Input Capacitance (Ciss)	27 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 155°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	MouseReel
Packaging	MouseReel
Power Dissipation (Max)	350mW (Ta)
Rds(on)	3Ohm @ 500mA, 10V Ω
Standard Pack Qty	3000
Standard Pack Qty	3000
Supplier Device Package	SOT-23-3
Supplier Device Package	SOT-23-3
Diode Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Gate Threshold Voltage	1.6V @ 250µA

Overview

Part: BSS138 from Diodes Incorporated

Type: N-Channel Enhancement Mode MOSFET

Description: 50V, 200mA N-Channel Enhancement Mode MOSFET with 3.5Ω maximum on-resistance, designed for high-efficiency power-management applications.

Operating Conditions:

Supply voltage: not applicable
Operating temperature: -55 to +150 °C
Gate threshold voltage: 0.5V to 1.5V

Absolute Maximum Ratings:

Max drain-source voltage: 50 V
Max continuous drain current: 200 mA
Max junction/storage temperature: +150 °C

Key Specs:

Drain-Source Breakdown Voltage (BV DSS): 50 V (min) at V GS = 0V, I D = 250 μA
Zero Gate Voltage Drain Current (I DSS): 0.5 μA (max) at V DS = 50V, V GS = 0V
Gate Threshold Voltage (V GS(TH)): 0.5 V (min), 1.5 V (max) at V DS = V GS, I D = 250 μA
Static Drain-Source On-Resistance (R DS(ON)): 3.5 Ω (max) at V GS = 10V, I D = 0.22A
Input Capacitance (C iss): 50 pF (max) at V DS = 10V, V GS = 0V, f = 1.0MHz
Turn-On Delay Time (t D(ON)): 20 ns (max) at V DD = 30V, I D = 0.2A, R GEN = 50Ω

Features:

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. 'Green' Device
Qualified to JEDEC standards for High Reliability.

Applications:

Systems/load switches

Package:

SOT23

Features

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. 'Green' Device (Note 3)
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
An automotive-compliant part is available under separate datasheet (BSS138Q)

Applications

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Systems/load switches

K38 = Product Type Marking Code YM = Date Code Marking Y or Y or Y= Year (ex: L = 2024) M or M = Month (ex: 9 = September)

Year	2003	…	2024	2025	2026	2027	2028	2029	2030	2031	2032	2033
Code	P	…	L	M	N	P	R	S	T	U	V	W
Month	Jan	Feb	Mar	Apr	May	Jun	Jul	Aug	Sep	Oct	Nov	Dec
Code	1	2	3	4	5	6	7	8	9	O	N	D

BSS138

Electrical Characteristics

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage	BV DSS	50	75	⎯	V	V GS = 0V, I D = 250  A
Zero Gate Voltage Drain Current	I DSS	⎯	⎯	0.5	μA	V DS = 50V, V GS = 0V
Gate-Body Leakage	I GSS	⎯	⎯	 100	nA	V GS =  20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage	V GS(TH)	0.5	1.2	1.5	V	V DS = V GS , I D = 250  A
Static Drain-Source On-Resistance	R DS(ON)	⎯	1.4	3.5	Ω	V GS = 10V, I D = 0.22A
Forward Transconductance	g FS	100	⎯	⎯	mS	V DS = 25V, I D = 0.2A, f = 1.0kHz
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance	C iss	⎯	⎯	50	pF	V DS = 10V, V GS = 0V, f = 1.0MHz
Output Capacitance	C oss	⎯	⎯	25	pF	V DS = 10V, V GS = 0V, f = 1.0MHz
Reverse Transfer Capacitance	C rss	⎯	⎯	8.0	pF	V DS = 10V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time	t D(ON)	⎯	⎯	20	ns	V DD = 30V, I D = 0.2A, R GEN = 50Ω
Turn-Off Delay Time	t D(OFF)	⎯	⎯	20	ns	V DD = 30V, I D = 0.2A, R GEN = 50Ω

Absolute Maximum Ratings

Characteristic	Characteristic	Symbol	Value	Unit
Drain-Source Voltage	Drain-Source Voltage	V DSS	50	V
Drain-Gate Voltage R GS  20kΩ	Drain-Gate Voltage R GS  20kΩ	V DGR	50	V
Gate-Source Voltage	Continuous	V GSS	 20	V
Gate-Source Voltage	Non Repetitive, Pulse Width<50  s	V GSS	 40	V
Drain Current	Continuous	I D	200	mA
Pulsed Drain Current (10μs Pulse Duty Cycle = 1%)	Pulsed Drain Current (10μs Pulse Duty Cycle = 1%)	I DM	1	A

Thermal Information

Characteristic	Symbol	Value	Unit
Power Dissipation (Note 5)	P D	300	mW
Thermal Resistance, Junction to Ambient (Note 5)	R  JA	417	 C/W
Operating and Storage Temperature Range	T J , T STG	-55 to +150	 C

Package Information

Package: SOT23
Package Material: Molded Plastic. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
BSS138	onsemi	TO-236-3, SC-59, SOT-23-3
BSS138-13-F	Infineon Technologies	—
BSS138-7-F	Infineon Technologies	—
BSS138Q.PDF	Infineon Technologies	—

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