IRLZ44NPBF
N-Channel HEXFET Power MOSFETThe IRLZ44NPBF is a n-channel hexfet power mosfet from Infineon Technologies. View the full IRLZ44NPBF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official IRLZ44NPBF datasheet (PDF) — the source this page was extracted from.
Manufacturer
Infineon TechnologiesCategory
MOSFETsPackage
TO-220-3
Lifecycle
Production (Last Updated: 4 days ago)
IRLZ44NPBF Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | TO-220 |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 41 A |
| Continuous Drain Current | 47A (Tc) |
| Current Rating | 47 A |
| Drain to Source Breakdown Voltage | 55 V |
| Drain to Source Resistance | 22 mΩ |
| Drain-Source Voltage (Vdss) | 55 V |
| Drain-Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Dual Supply Voltage | 55 V |
| Element Configuration | Single |
| Fall Time | 15 ns |
| FET Type | N-Channel |
| Gate Charge (Qg) | 48 nC @ 5 V |
| Gate to Source Voltage (Vgs) | 16 V |
| Height | 19.15 mm |
| Input Capacitance | 1.7 nF |
| Input Capacitance (Ciss) | 1700 pF @ 25 V |
| Introduction Date | 1996-02-01 |
| Lead Free | Lead Free |
| Lead Pitch | 2.54 mm |
| Length | 10.5156 mm |
| Lifecycle Status | Production (Last Updated: 4 days ago) |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 83 W |
| Min Breakdown Voltage | 55 V |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Nominal Vgs | 2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| On-State Resistance | 22 mΩ |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 |
| Package Quantity | 1000 |
| Packaging | Tube |
| Packaging | Bulk |
| Power Dissipation | 83 W |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Radiation Hardening | No |
| Rds(on) | 22mOhm @ 25A, 10V Ω |
| Rds On Max | 22 mΩ |
| REACH SVHC | Yes |
| Recovery Time | 120 ns |
| Resistance | 22 mΩ |
| Rise Time | 84 ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Standard Pack Qty | 1000 |
| Supplier Device Package | TO-220AB |
| Diode Technology | MOSFET (Metal Oxide) |
| Threshold Voltage | 2 V |
| Turn-Off Delay Time | 26 ns |
| Turn-On Delay Time | 11 ns |
| Vgs (Max) | ±16V |
| Gate Threshold Voltage | 2V @ 250µA |
| Voltage Rating (DC) | 55 V |
| Width | 4.69 mm |
IRLZ44NPBF Overview
Part: IRLZ44NPBF — International Rectifier (now Infineon Technologies)
Type: N-Channel HEXFET Power MOSFET
Description: 55 V, 0.022 Ω logic-level gate drive N-channel HEXFET Power MOSFET with 47 A continuous drain current and 175°C operating temperature.
Operating Conditions:
- Operating temperature: -55 to +175 °C
Absolute Maximum Ratings:
- Max supply voltage: 16 V (Gate-to-Source Voltage)
- Max continuous current: 47 A (Drain Current @ Tc=25C, VGS=10V)
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain-to-Source Breakdown Voltage (V(BR)DSS): 55 V (VGS = 0V, ID = 250µA)
- Static Drain-to-Source On-Resistance (RDS(on)): 0.022 Ω (VGS = 10V, ID = 25A)
- Gate Threshold Voltage (VGS(th)): 1.0 V min, 2.0 V max (VDS = VGS, ID = 250µA)
- Drain-to-Source Leakage Current (IDSS): 25 µA max (VDS = 55V, VGS = 0V)
- Total Gate Charge (Qg): 48 nC max (ID = 25A)
- Input Capacitance (Ciss): 1700 pF typ (VGS = 0V, VDS = 25V, f = 1.0MHz)
- Turn-On Delay Time (td(on)): 11 ns typ (VDD = 28V, ID = 25A, RG = 3.4 Ω, VGS = 5.0V)
- Reverse Recovery Time (trr): 120 ns max (TJ = 25C, IF = 25A, di/dt = 100A/µs)
Features:
- Logic-Level Gate Drive
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Applications:
Package:
- TO-220AB
IRLZ44NPBF Electrical Characteristics
| Parameter | Min. | Typ. | Max. | Units | Conditions | |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-to-Source Breakdown Voltage | 55 | V | V GS = 0V, I D = 250A | ||
| ∆ V (BR)DSS / ∆ T J | Breakdown Voltage Temp. Coefficient | 0.070 | V/C | Reference to 25C, I D = 1mA | ||
| R DS(on) | Static Drain-to-Source On-Resistance | 0.022 | Ω | V GS = 10V, I D = 25A | ||
| R DS(on) | Static Drain-to-Source On-Resistance | 0.025 | Ω | V GS = 5.0V, I D = 25A | ||
| R DS(on) | Static Drain-to-Source On-Resistance | 0.035 | Ω | V GS = 4.0V, I D = 21A | ||
| V GS(th) | Gate Threshold Voltage | 1.0 | 2.0 | V | V DS = V GS , I D = 250A | |
| g fs | Forward ← Transconductance | 21 | S | V DS = 25V, I D = 25A | ||
| I DSS | Drain-to-Source Leakage Current | 25 | A | V DS = 55V, V GS = 0V | ||
| I DSS | Drain-to-Source Leakage Current | 250 | A | V DS = 44V, V GS = 0V, T J = 150C | ||
| I GSS | Gate-to-Source Forward Leakage | 100 | nA | V GS = 16V | ||
| I GSS | Gate-to-Source Reverse Leakage | -100 | V GS = -16V | |||
| Q g | Total Gate Charge | 48 | nC | I D = 25A | ||
| Q gs | Gate-to-Source Charge | 8.6 | nC | V DS = 44V | ||
| Q gd | Gate-to-Drain ("Miller") Charge | 25 | nC | V GS = 5.0V, See Fig. 6 and 13 | ||
| t d(on) | Turn-On Delay Time | 11 | ns | V DD = 28V | ||
| t r | Rise ← Time | 84 | ns | I D = 25A | ||
| t d(off) | Turn-Off Delay Time | 26 | ns | R G = 3.4 Ω, V GS = 5.0V | ||
| t f | Fall ← Time | 15 | ns | R D = 1.1 Ω, See Fig. 10 | ||
| L D | Internal Drain Inductance | 4.5 | nH | Between lead, 6mm (0.25in.) | ||
| L S | Internal Source Inductance | 7.5 | nH | from package and center of die contact | ||
| C iss | Input ← Capacitance | 1700 | pF | V GS = 0V | ||
| C oss | Output ← Capacitance | 400 | pF | V DS = 25V | ||
| C rss | Reverse Transfer Capacitance | 150 | pF | = 1.0MHz, See Fig. 5 |
IRLZ44NPBF Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| I D @ T C = 25C | Continuous Drain Current, V GS @ 10V | 47 | A |
| I D @ T C = 100C | Continuous Drain Current, V GS @ 10V | 33 | A |
| I DM | Pulsed Drain Current | 160 | A |
| P D @T C = 25C | Power ← Dissipation | 110 | W |
| Linear Derating Factor | 0.71 | W/C | |
| V GS | Gate-to-Source Voltage | 16 | V |
| E AS | Single Pulse Avalanche Energy | 210 | mJ |
| I AR | Avalanche ← Current | 25 | A |
| E AR | Repetitive Avalanche Energy | 11 | m J |
| d v / d t | Peak Diode Recovery dv/dt | 5.0 | V / n s |
| T J | Operating Junction and | -55 to + 175 | C |
| T STG | Storage Temperature Range | C | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | C | |
| Mounting torque, 6-32 or M3 screw. | 10 lbfin (1.1Nm) |
IRLZ44NPBF Thermal Information
| Parameter | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|
| R θ JC | Junction-to-Case | 1.4 | |||
| R θ CS | Case-to-Sink, Flat, Greased Surface | 0.50 | C/W | ||
| R θ JA | Junction-to-Ambient | 62 |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| IRLZ44N | Infineon Technologies | TO-220AB |
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All MOSFETs datasheetsAll Infineon Technologies datasheets (140)
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