IRLZ44N

Part: Vishay Siliconix Power MOSFET

Type: N-Channel MOSFET

Key Specs:

• Drain-source voltage (VDS): 60 V
• On-state resistance (RDS(on)): 0.028 Ω (at VGS = 5.0 V)
• Total gate charge (Qg): 66 nC (Max.)
• Continuous drain current (ID): 50 A (at TC = 25 °C)
• Maximum power dissipation (PD): 150 W (at TC = 25 °C)
• Operating junction and storage temperature range: -55 to +175 °C

Features:

• Dynamic dV/dt rating
• Logic-level gate drive
• RDS(on) specified at VGS = 4 V and 5 V
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements

Applications:

• null

Package:

• TO-220AB: dimensions not specified

• Dynamic dV/dt rating
• Logic-level gate drive
• RDS(on) specified at VGS = 4 V and 5 V
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912