IRLZ44N
N-Channel MOSFETThe IRLZ44N is a n-channel mosfet from Infineon Technologies. View the full IRLZ44N datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | TO-220 |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 41 A |
| Continuous Drain Current | 47A (Tc) |
| Current Rating | 47 A |
| Drain to Source Breakdown Voltage | 55 V |
| Drain to Source Resistance | 22 mΩ |
| Drain-Source Voltage (Vdss) | 55 V |
| Drain-Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Dual Supply Voltage | 55 V |
| Element Configuration | Single |
| Fall Time | 15 ns |
| FET Type | N-Channel |
| Gate Charge (Qg) | 48 nC @ 5 V |
| Gate to Source Voltage (Vgs) | 16 V |
| Height | 19.15 mm |
| Input Capacitance | 1.7 nF |
| Input Capacitance (Ciss) | 1700 pF @ 25 V |
| Introduction Date | 1996-02-01 |
| Lead Free | Lead Free |
| Lead Pitch | 2.54 mm |
| Length | 10.5156 mm |
| Lifecycle Status | Production (Last Updated: 4 days ago) |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 83 W |
| Min Breakdown Voltage | 55 V |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Nominal Vgs | 2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| On-State Resistance | 22 mΩ |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 |
| Package Quantity | 1000 |
| Packaging | Tube |
| Packaging | Bulk |
| Power Dissipation | 83 W |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Radiation Hardening | No |
| Rds(on) | 22mOhm @ 25A, 10V Ω |
| Rds On Max | 22 mΩ |
| REACH SVHC | Yes |
| Recovery Time | 120 ns |
| Resistance | 22 mΩ |
| Rise Time | 84 ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Standard Pack Qty | 1000 |
| Supplier Device Package | TO-220AB |
| Supplier Device Package | TO-220AB |
| Supplier Device Package | TO-220AB |
| Diode Technology | MOSFET (Metal Oxide) |
| Threshold Voltage | 2 V |
| Turn-Off Delay Time | 26 ns |
| Turn-On Delay Time | 11 ns |
| Vgs (Max) | ±16V |
| Gate Threshold Voltage | 2V @ 250µA |
| Voltage Rating (DC) | 55 V |
| Width | 4.69 mm |
Overview
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Pin Configuration
IRLZ44N TO-220AB Pinout
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | G | I | Gate |
| 2 | D | O | Drain |
| 3 | S | O | Source |
Notes
- TO-220AB package: Three-pin power MOSFET package with Drain (tab), Gate, and Source leads.
- Pin 2 (Drain) is connected to the metal tab on the back of the package for improved thermal contact.
- This is an N-Channel MOSFET with logic-level gate drive (specified at VGS = 4 V and 5 V).
- The device includes an integral body diode between Source and Drain.
Electrical Characteristics
| Parameter | Conditions | |
|---|---|---|
| VigR)Dss | Drain-to-Source Breakdown Voltage | Vas = OV, Ip = 250pA |
| A\Verypss/ATy | Breakdown Voltage Temp. Coefficient | Reference to 25°C, Ip = 1mA |
| Static Drain-to-Source On-Resistance | Vas = 10V, Ip = 25A @ | |
| Static Drain-to-Source On-Resistance | Ves = 5.0V, Ip = 25A @ | |
| Static Drain-to-Source On-Resistance | Vas = 4.0V, Ip =21A © | |
| Gate Threshold Voltage | Vos = Vas. Ip = 250A | |
| Forward Transconductance | Vos = 25V, Ip = 25A | |
| Drain-to-Source Leakage Current | Vos = 55V, Vas = OV | |
| Drain-to-Source Leakage Current | Vos = 44V, Vas = OV, Ty = 150°C | |
| Gate-to-Source Forward Leakage | Vas = 16V | |
| Gate-to-Source Reverse Leakage | Vas = -16V | |
| Total Gate Charge | Ip = 25A | |
| Gate-to-Source Charge | Vos = 44V | |
| Gate-to-Drain ("Miller") Charge | Vas = 5.0V, See Fig. 6 and 13 © | |
| Turn-On Delay Time | Vpp = 28V | |
| Rise Time | Ip = 25A | |
| Turn-Off Delay Time | Re = 3.4Q, Vas = 5.0V | |
| Fall Time | Rp = 1.1Q, See Fig. 10 @ | |
| Intemal Drain Inductance | Between lead, 6mm (0.25in.) | |
| Internal Source Inductance | from package and center of die contact | |
| Input Capacitance | Ves = OV | |
| Output Capacitance | Vos = 25V f = 1.0MHz, See Fig. 5 |
Recctificr International
| Parameter | Conditions | |||||
|---|---|---|---|---|---|---|
| Continuous Source Current : (Body Diode) | —\ | —\ | 7 | |||
| Ism | Pulsed Source Current (Body Diode) © | — | \ | __\ | ] | 460 |
| Vsp | Diode Forward Voltage | —}—\ | 13 | Vv | ||
| tere | Reverse Recovery Time | —\ | 80] | 120 | ns | |
| Qn | Reverse RecoveryCharge | —\ | 210] | 320 | nC | |
| ton | Forward Turn-On Time | Intrinsic turn-on time is negligible (turn-on is dominated by Lg+Lp) | Intrinsic turn-on time is negligible (turn-on is dominated by Lg+Lp) | Intrinsic turn-on time is negligible (turn-on is dominated by Lg+Lp) | Intrinsic turn-on time is negligible (turn-on is dominated by Lg+Lp) | Intrinsic turn-on time is negligible (turn-on is dominated by Lg+Lp) |
Absolute Maximum Ratings
| Parameter | Max. | Units | |
|---|---|---|---|
| Ip @ Tc = 25°C | Continuous Drain Current, Vag @ 10V | 47 | A |
| Ip @ Tc = 100°C | Continuous Drain Current, Vag @ 10V | 33 | A |
| lbm | Pulsed Drain Current © | 160 | A |
| Pp @Tc = 25°C | Power Dissipation | 110 | Ww |
| Linear Derating Factor | 0.71 | WiC. | |
| Ves | Gate-to-Source Voltage | +16 | Vv |
| Eas | Single Pulse Avalanche Energy @ | 210 | mJ |
| lar | Avalanche Current® | 25 | A |
| Ear | Repetitive Avalanche Energy® | 11 | mJ |
| dv/dt | Peak Diode Recovery dv/dt @ | 5.0 | V/ns |
| Ty | Operating Junction and | -55 to+175 | °c |
| Tsta | Storage Temperature Range | °c | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | °c | |
| Mounting torque, 6-32 or M3 screw. | 10 Ibfein (1.1Nem) |
Thermal Information
| Parameter | |
|---|---|
| Junction-to-Case | |
| Recs | Case-to-Sink, Flat, Greased Surface |
| Rosa | Junction-to-Ambient |
PD -9.1346B
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Get structured datasheet data via API
Get started free