NTA4151PT1G
Small Signal P-Channel MOSFETThe NTA4151PT1G is a small signal p-channel mosfet from onsemi. View the full NTA4151PT1G datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 760mA (Tj) |
| Drain-Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| FET Type | P-Channel |
| Gate Charge (Qg) | 2.1 nC @ 4.5 V |
| Input Capacitance (Ciss) | 156 pF @ 5 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | SC-75, SOT-416 |
| Power Dissipation (Max) | 301mW (Tj) |
| Rds(on) | 360mOhm @ 350mA, 4.5V Ω |
| Supplier Device Package | SC-75, SOT-416 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±6V |
| Gate Threshold Voltage | 1.2V @ 250µA |
Overview
Part: NTA4151P, NTE4151P — ON Semiconductor
Type: P-Channel Small Signal MOSFET
Description: A -20 V, -760 mA P-Channel Small Signal MOSFET with gate Zener protection, featuring low R_DS(on) and available in SC-75 and SC-89 packages.
Operating Conditions:
- Drain-to-Source Voltage: up to -20 V
- Gate-to-Source Voltage: ±6.0 V
- Operating temperature: -55 to 150 °C
Absolute Maximum Ratings:
- Max Drain-to-Source Voltage: -20 V
- Max continuous Drain Current: -760 mA
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-to-Source Breakdown Voltage: -20 V (V_GS = 0 V, I_D = -250 mA)
- Zero Gate Voltage Drain Current: Typ -1.0 nA, Max -100 nA (V_GS = 0 V, V_DS = -16 V)
- Gate Threshold Voltage: Min -0.45 V (V_DS = V_GS, I_D = -250 mA)
- Drain-to-Source On Resistance: Typ 0.26 Ω, Max 0.36 Ω (V_GS = -4.5 V, I_D = -350 mA)
- Input Capacitance: Typ 156 pF (V_GS = 0 V, f = 1.0 MHz, V_DS = -5.0 V)
- Total Gate Charge: Typ 2.1 nC (V_GS = -4.5 V, V_DD = -10 V, I_D = -0.3A)
- Turn-On Delay Time: Typ 8.0 ns (V_GS = -4.5 V, V_DD = -10 V, I_D = -200 mA, R_G = 10 Ω)
- Forward Diode Voltage: Typ -0.72 V, Max -1.1 V (V_GS = 0 V, I_S = -250 mA)
Features:
- Low R_DS(on) for Higher Efficiency and Longer Battery Life
- SC-75 Standard Gullwing Package
- Small Outline Package (1.6 x 1.6 mm)
- ESD Protected Gate
- Pb-Free Packages are Available
Applications:
- High Side Load Switch
- Small Drive Circuits
- DC-DC Conversion
- Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc.
Package:
- SC-75 (1.6 x 1.6 mm)
- SC-89
Features
- Low RDS(on) for Higher Efficiency and Longer Battery Life
- SC-75 Standard Gullwing Package
- Small Outline Package (1.6 x 1.6 mm)
- ESD Protected Gate
- Pb-Free Packages are Available
Applications
- High Side Load Switch
- Small Drive Circuits
- DC-DC Conversion
- Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc.
Pin Configuration
SC-75 / SOT-416 CASE 463 STYLE 5
SC-75 / SOT-416 CASE 463 STYLE 5
1
SC-89 CASE 463C
xx
= Device Code
M
= Date Code*
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
Electrical Characteristics
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | V (BR)DSS | V GS = 0 V, I D = -250 m A | -20 | V | ||
| Zero Gate Voltage Drain Current | I DSS | V GS = 0 V, V DS = -16 V | -1.0 | -100 | nA | |
| Gate-to-Source Leakage Current | I GSS | V DS = 0 V, V GS = ± 4.5 V | $ 1.0 | $ 10 | m A | |
| ON CHARACTERISTICS (Note 2) | ||||||
| Gate Threshold Voltage | V GS(TH) | V DS = V GS , I D = -250 m A | -0.45 | V | ||
| Drain-to-Source On Resistance | R DS(on) | V GS = -4.5 V, I D = -350 mA | 0.26 | 0.36 | W | |
| Drain-to-Source On Resistance | R DS(on) | V GS = -2.5 V, I D = -300 mA | 0.35 | 0.45 | W | |
| Drain-to-Source On Resistance | R DS(on) | V GS = -1.8 V, I D = -150 mA | 0.49 | 1.0 | W | |
| Forward Transconductance | g FS | V DS = -10 V, I D = -250 mA | 0.4 | S | ||
| CHARGES AND CAPACITANCES | ||||||
| Input Capacitance | C ISS | V GS = 0 V, f = 1.0 MHz, V DS = -5.0 V | 156 | pF | ||
| Output Capacitance | C OSS | V GS = 0 V, f = 1.0 MHz, V DS = -5.0 V | 28 | pF | ||
| Reverse Transfer Capacitance | C RSS | V GS = 0 V, f = 1.0 MHz, V DS = -5.0 V | 18 | pF | ||
| Total Gate Charge | Q G(TOT) | V GS = -4.5 V, V DD = -10 V, I D = -0.3A | 2.1 | nC | ||
| Threshold Gate Charge | Q G(TH) | V GS = -4.5 V, V DD = -10 V, I D = -0.3A | 0.125 | nC | ||
| Gate-to-Source Charge | Q GS | V GS = -4.5 V, V DD = -10 V, I D = -0.3A | 0.325 | nC | ||
| Gate-to-Drain Charge | Q GD | V GS = -4.5 V, V DD = -10 V, I D = -0.3A | 0.5 | nC | ||
| SWITCHING CHARACTERISTICS (Note 3) | SWITCHING CHARACTERISTICS (Note 3) | |||||
| Turn-On Delay Time | td (ON) | V GS = -4.5 V, V DD = -10 V, I D = -200 mA, R G = 10 W | 8.0 | ns | ||
| Rise Time | t r | V GS = -4.5 V, V DD = -10 V, I D = -200 mA, R G = 10 W | 8.2 | ns | ||
| Turn-Off Delay Time | td (OFF) | V GS = -4.5 V, V DD = -10 V, I D = -200 mA, R G = 10 W | 29 | ns | ||
| Fall Time | t f | V GS = -4.5 V, V DD = -10 V, I D = -200 mA, R G = 10 W | 20.4 | ns | ||
| DRAIN-SOURCE DIODE CHARACTERISTICS | DRAIN-SOURCE DIODE CHARACTERISTICS | DRAIN-SOURCE DIODE CHARACTERISTICS | DRAIN-SOURCE DIODE CHARACTERISTICS | DRAIN-SOURCE DIODE CHARACTERISTICS | DRAIN-SOURCE DIODE CHARACTERISTICS | DRAIN-SOURCE DIODE CHARACTERISTICS |
| Forward Diode Voltage | V SD | V GS = 0 V, I S = -250 mA | -0.72 | -1.1 | V |
Absolute Maximum Ratings
| Parameter | Parameter | Symbol | Value | Units |
|---|---|---|---|---|
| Drain-to-Source Voltage | Drain-to-Source Voltage | V DSS | -20 | V |
| Gate-to-Source Voltage | Gate-to-Source Voltage | V GS | ± 6.0 | V |
| Continuous Drain Current (Note 1) | Steady State | I D | -760 | mA |
| Power Dissipation (Note 1) SC-75 SC-89 Steady State | Power Dissipation (Note 1) SC-75 SC-89 Steady State | P D | 301 313 | mW |
| Pulsed Drain Current | tp =10 m s | I DM | ± 1000 | mA |
| Operating Junction and Storage Temperature | Operating Junction and Storage Temperature | T J , T STG | -55 to 150 | ° C |
| Continuous Source Current (Body Diode) | Continuous Source Current (Body Diode) | I S | -250 | mA |
| Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) | Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) | T L | 260 | ° C |
| Gate-to-Source ESD Rating - (Human Body Model, Method 3015) | Gate-to-Source ESD Rating - (Human Body Model, Method 3015) | ESD | 1800 | V |
Thermal Information
| Junction-to-Ambient - Steady State (Note 1) SC-75 | R q JA | 415 | ° C/W |
|---|
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
- Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
| V (BR)DSS | R DS(on) TYP | I D MAX |
|---|---|---|
| -20 V | 0.26 W @-4.5 V | -760 mA |
| -20 V | 0.35 W @-2.5 V | -760 mA |
| -20 V | 0.49 W @-1.8 V | -760 mA |
P-Channel MOSFET
Package Information
SC-75/SOT-416 CASE 463-01 ISSUE F
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| NTA/NTE4151P | ON Semiconductor | — |
| NTA4151PT1 | ON Semiconductor | — |
| NTE4151PT1G | ON Semiconductor | — |
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