NTA4151PT1G
Small Signal MOSFET
Manufacturer
ON Semiconductor
Package
SC-75(SOT-416)
Overview
Part: ON Semiconductor Small Signal MOSFET
Type: Single P-Channel Small Signal MOSFET
Key Specs:
- Drain-to-Source Voltage: -20 V
- Continuous Drain Current: -760 mA
- Typical RDS(on) @ VGS = -4.5 V: 0.26 Ω
- Gate-to-Source ESD Rating (Human Body Model): 1800 V
- Power Dissipation (SC-75): 301 mW
- Power Dissipation (SC-89): 313 mW
Features:
- Low RDS(on) for Higher Efficiency and Longer Battery Life
- Small Outline Package (1.6 x 1.6 mm)
- SC-75 Standard Gullwing Package
- ESD Protected Gate
- Pb-Free Packages are Available
Applications:
- High Side Load Switch
- DC-DC Conversion
- Small Drive Circuits
- Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc.
Package:
- SC-75: 1.6 x 1.6 mm
- SC-89: Small Outline Package
Features
- Low RDS(on) for Higher Efficiency and Longer Battery Life
- Small Outline Package (1.6 x 1.6 mm)
- SC-75 Standard Gullwing Package
- ESD Protected Gate
- Pb-Free Packages are Available
Applications
- High Side Load Switch
- DC-DC Conversion
- Small Drive Circuits
- Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc.
Pin Configuration
SC-89 CASE 463C
xx = Device Code M = Date Code* = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Electrical Characteristics
| Parameter | er Symbol Test Condition | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | • | |||||
| Drain-to-Source Breakdown Voltage | V (BR)DSS | VGS = 0 V, ID = -250 μ A | -20 | V | ||
| Zero Gate Voltage Drain Current | I DSS | VGS = 0 V, VDS = -16 V | -1.0 | -100 | nA | |
| Gate-to-Source Leakage Current | I GSS | VDS = 0 V, VGS = ± 4.5 V | ± 1.0 | ± 10 | μΑ | |
| ON CHARACTERISTICS (Note 2) | • | • | ||||
| Gate Threshold Voltage | V GS(TH) | VDS = VGS, ID = -250 μ A | -0.45 | V | ||
| Drain-to-Source On Resistance | R DS(on) | VGS = -4.5 V, ID = -350 mA | 0.26 | 0.36 | Ω | |
| VGS = -2.5 V, ID = -300 mA | 0.35 | 0.45 | ||||
| VGS = -1.8 V, ID = -150 mA | 0.49 | 1.0 | ||||
| Forward Transconductance | 9FS | VDS = -10 V, ID = -250 mA | 0.4 | S | ||
| CHARGES AND CAPACITANCES | • | • | ||||
| Input Capacitance | C ISS | VGS = 0 V, f = 1.0 MHz, | 156 | pF | ||
| Output Capacitance | C OSS | VDS = -5.0 V | 28 | |||
| Reverse Transfer Capacitance | C RSS | 1 | 18 | |||
| Total Gate Charge | Q G(TOT) | VGS = -4.5 V, VDD = -10 V, ID = -0.3 A | 2.1 | nC | ||
| Threshold Gate Charge | Q G(TH) | ID = -0.3 A | 0.125 | 1 | ||
| Gate-to-Source Charge | Q GS | 1 | 0.325 | |||
| Gate-to-Drain Charge | QGD | 0.5 | ||||
| SWITCHING CHARACTERISTICS (Note | : 3) | • | • | |||
| Turn-On Delay Time | td (ON) | VGS = -4.5 V, VDD = -10 V, | 8.0 | ns | ||
| Rise Time | t r | ID = -200 mA, RG = 10 Ω | 8.2 | |||
| Turn-Off Delay Time | td (OFF) | 1 | 29 | 1 | ||
| Fall Time | t f | 1 | 20.4 | |||
| DRAIN-SOURCE DIODE CHARACTER | ISTICS | • | ||||
| Forward Diode Voltage | VSD | VGS = 0 V, IS = -250 mA | -0.72 | -1.1 | V |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V |
| Gate-to-Source Voltage | VGS | ±6.0 | |
| Continuous Drain Current (Note 1) Steady State | I D –760 | ||
| Power Dissipation (Note 1) SC-75 SC-89 Steady State | P D | 301 313 | |
| Pulsed Drain Current tp =10 μs | I DM | ±1000 | |
| Operating Junction and Storag | T J , T STG | –55 to 150 | °C |
| Continuous Source Current (Bo | I S | -250 | mA |
| Lead Temperature for Soldering (1/8 in from case for 10 s) | T L | 260 | °C |
| Gate-to-Source ESD Rating - (Human Body Model | ESD | 1800 | V |
Thermal Information
| Junction-to-Ambient - Steady State (Note 1) | Rθ JA | °C/W | |
|---|---|---|---|
| SC-75 | 415 | ||
| SC-89 | 400 |
Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| NTA/NTE4151P | ON Semiconductor | — |
| NTA4151PT1 | ON Semiconductor | — |
| NTE4151PT1G | ON Semiconductor | — |
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
Get structured datasheet data via API
Get started free