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NTA4151PT1

Small Signal P-Channel MOSFET

The NTA4151PT1 is a small signal p-channel mosfet from onsemi. View the full NTA4151PT1 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official NTA4151PT1 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Category

MOSFETs

NTA4151PT1 Key Specifications

ParameterValue
Drain-to-Source Breakdown Voltage-20 V (V_GS = 0 V, I_D = -250 mA)
Zero Gate Voltage Drain CurrentTyp -1.0 nA, Max -100 nA (V_GS = 0 V, V_DS = -16 V)
Gate Threshold VoltageMin -0.45 V (V_DS = V_GS, I_D = -250 mA)
Drain-to-Source On ResistanceTyp 0.26 Ω, Max 0.36 Ω (V_GS = -4.5 V, I_D = -350 mA)
Input CapacitanceTyp 156 pF (V_GS = 0 V, f = 1.0 MHz, V_DS = -5.0 V)
Total Gate ChargeTyp 2.1 nC (V_GS = -4.5 V, V_DD = -10 V, I_D = -0.3A)
Turn-On Delay TimeTyp 8.0 ns (V_GS = -4.5 V, V_DD = -10 V, I_D = -200 mA, R_G = 10 Ω)
Forward Diode VoltageTyp -0.72 V, Max -1.1 V (V_GS = 0 V, I_S = -250 mA)

NTA4151PT1 Overview

Part: NTA4151P, NTE4151P — ON Semiconductor

Type: P-Channel Small Signal MOSFET

Description: A -20 V, -760 mA P-Channel Small Signal MOSFET with gate Zener protection, featuring low R_DS(on) and available in SC-75 and SC-89 packages.

Operating Conditions:

  • Drain-to-Source Voltage: up to -20 V
  • Gate-to-Source Voltage: ±6.0 V
  • Operating temperature: -55 to 150 °C

Absolute Maximum Ratings:

  • Max Drain-to-Source Voltage: -20 V
  • Max continuous Drain Current: -760 mA
  • Max junction/storage temperature: 150 °C

Key Specs:

  • Drain-to-Source Breakdown Voltage: -20 V (V_GS = 0 V, I_D = -250 mA)
  • Zero Gate Voltage Drain Current: Typ -1.0 nA, Max -100 nA (V_GS = 0 V, V_DS = -16 V)
  • Gate Threshold Voltage: Min -0.45 V (V_DS = V_GS, I_D = -250 mA)
  • Drain-to-Source On Resistance: Typ 0.26 Ω, Max 0.36 Ω (V_GS = -4.5 V, I_D = -350 mA)
  • Input Capacitance: Typ 156 pF (V_GS = 0 V, f = 1.0 MHz, V_DS = -5.0 V)
  • Total Gate Charge: Typ 2.1 nC (V_GS = -4.5 V, V_DD = -10 V, I_D = -0.3A)
  • Turn-On Delay Time: Typ 8.0 ns (V_GS = -4.5 V, V_DD = -10 V, I_D = -200 mA, R_G = 10 Ω)
  • Forward Diode Voltage: Typ -0.72 V, Max -1.1 V (V_GS = 0 V, I_S = -250 mA)

Features:

  • Low R_DS(on) for Higher Efficiency and Longer Battery Life
  • SC-75 Standard Gullwing Package
  • Small Outline Package (1.6 x 1.6 mm)
  • ESD Protected Gate
  • Pb-Free Packages are Available

Applications:

  • High Side Load Switch
  • Small Drive Circuits
  • DC-DC Conversion
  • Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc.

Package:

  • SC-75 (1.6 x 1.6 mm)
  • SC-89

NTA4151PT1 Features

  • Low RDS(on) for Higher Efficiency and Longer Battery Life
  • SC-75 Standard Gullwing Package
  • Small Outline Package (1.6 x 1.6 mm)
  • ESD Protected Gate
  • Pb-Free Packages are Available

NTA4151PT1 Applications

  • High Side Load Switch
  • Small Drive Circuits
  • DC-DC Conversion
  • Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc.

NTA4151PT1 Pin Configuration

SC-75 / SOT-416 CASE 463 STYLE 5

SC-75 / SOT-416 CASE 463 STYLE 5

1

SC-89 CASE 463C

xx

= Device Code

M

= Date Code*

G

= Pb-Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending upon manufacturing location.

NTA4151PT1 Electrical Characteristics

ParameterSymbolTest ConditionMinTypMaxUnit
OFF CHARACTERISTICS
Drain-to-Source Breakdown VoltageV (BR)DSSV GS = 0 V, I D = -250 m A-20V
Zero Gate Voltage Drain CurrentI DSSV GS = 0 V, V DS = -16 V-1.0-100nA
Gate-to-Source Leakage CurrentI GSSV DS = 0 V, V GS = ± 4.5 V$ 1.0$ 10m A
ON CHARACTERISTICS (Note 2)
Gate Threshold VoltageV GS(TH)V DS = V GS , I D = -250 m A-0.45V
Drain-to-Source On ResistanceR DS(on)V GS = -4.5 V, I D = -350 mA0.260.36W
Drain-to-Source On ResistanceR DS(on)V GS = -2.5 V, I D = -300 mA0.350.45W
Drain-to-Source On ResistanceR DS(on)V GS = -1.8 V, I D = -150 mA0.491.0W
Forward Transconductanceg FSV DS = -10 V, I D = -250 mA0.4S
CHARGES AND CAPACITANCES
Input CapacitanceC ISSV GS = 0 V, f = 1.0 MHz, V DS = -5.0 V156pF
Output CapacitanceC OSSV GS = 0 V, f = 1.0 MHz, V DS = -5.0 V28pF
Reverse Transfer CapacitanceC RSSV GS = 0 V, f = 1.0 MHz, V DS = -5.0 V18pF
Total Gate ChargeQ G(TOT)V GS = -4.5 V, V DD = -10 V, I D = -0.3A2.1nC
Threshold Gate ChargeQ G(TH)V GS = -4.5 V, V DD = -10 V, I D = -0.3A0.125nC
Gate-to-Source ChargeQ GSV GS = -4.5 V, V DD = -10 V, I D = -0.3A0.325nC
Gate-to-Drain ChargeQ GDV GS = -4.5 V, V DD = -10 V, I D = -0.3A0.5nC
SWITCHING CHARACTERISTICS (Note 3)SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Timetd (ON)V GS = -4.5 V, V DD = -10 V, I D = -200 mA, R G = 10 W8.0ns
Rise Timet rV GS = -4.5 V, V DD = -10 V, I D = -200 mA, R G = 10 W8.2ns
Turn-Off Delay Timetd (OFF)V GS = -4.5 V, V DD = -10 V, I D = -200 mA, R G = 10 W29ns
Fall Timet fV GS = -4.5 V, V DD = -10 V, I D = -200 mA, R G = 10 W20.4ns
DRAIN-SOURCE DIODE CHARACTERISTICSDRAIN-SOURCE DIODE CHARACTERISTICSDRAIN-SOURCE DIODE CHARACTERISTICSDRAIN-SOURCE DIODE CHARACTERISTICSDRAIN-SOURCE DIODE CHARACTERISTICSDRAIN-SOURCE DIODE CHARACTERISTICSDRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode VoltageV SDV GS = 0 V, I S = -250 mA-0.72-1.1V

NTA4151PT1 Absolute Maximum Ratings

ParameterParameterSymbolValueUnits
Drain-to-Source VoltageDrain-to-Source VoltageV DSS-20V
Gate-to-Source VoltageGate-to-Source VoltageV GS± 6.0V
Continuous Drain Current (Note 1)Steady StateI D-760mA
Power Dissipation (Note 1) SC-75 SC-89 Steady StatePower Dissipation (Note 1) SC-75 SC-89 Steady StateP D301 313mW
Pulsed Drain Currenttp =10 m sI DM± 1000mA
Operating Junction and Storage TemperatureOperating Junction and Storage TemperatureT J , T STG-55 to 150° C
Continuous Source Current (Body Diode)Continuous Source Current (Body Diode)I S-250mA
Lead Temperature for Soldering Purposes (1/8 in from case for 10 s)Lead Temperature for Soldering Purposes (1/8 in from case for 10 s)T L260° C
Gate-to-Source ESD Rating - (Human Body Model, Method 3015)Gate-to-Source ESD Rating - (Human Body Model, Method 3015)ESD1800V

NTA4151PT1 Thermal Information

Junction-to-Ambient - Steady State (Note 1) SC-75R q JA415° C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

  1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
V (BR)DSSR DS(on) TYPI D MAX
-20 V0.26 W @-4.5 V-760 mA
-20 V0.35 W @-2.5 V-760 mA
-20 V0.49 W @-1.8 V-760 mA

P-Channel MOSFET

NTA4151PT1 Package Information

SC-75/SOT-416 CASE 463-01 ISSUE F

More part numbers on this datasheet

Their pages show this same datasheet. Some are linked through their part family rather than checked part by part, so confirm the exact part in the ordering information.

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All MOSFETs datasheetsAll onsemi datasheets (357)

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