BSS126H6327
N-channel Depletion Mode MOSFETThe BSS126H6327 is a n-channel depletion mode mosfet from Infineon Technologies. View the full BSS126H6327 datasheet below including key specifications, pinout, absolute maximum ratings.
Official BSS126H6327 datasheet (PDF) — the source this page was extracted from.
BSS126H6327 Key Specifications
| Parameter | Value |
|---|---|
| Reverse Diode Dv/Dt | 6 kV/μs |
| Gate-Source Voltage (VGS) | ±20 V |
| Drain-Source Voltage (VDS) | 600 V |
| Operating Temperature Range | -55 to 150 °C |
| Continuous Drain Current (ID) | 0.021 A |
| Total Power Dissipation (Ptot) | 0.50 W |
| Gate Threshold Voltage (VGS(Th)) | -2.7 V to -1.6 V |
| Drain-Source On-Resistance (RDS(On)) | 700 Ω |
BSS126H6327 Overview
Part: BSS126
Type: N-channel Depletion Mode MOSFET
Description: N-channel depletion mode small-signal transistor with a 600 V drain-source breakdown voltage, 700 Ω maximum on-state resistance, and 21 mA continuous drain current at 25 °C.
Operating Conditions:
- Gate-source voltage: ±20 V
- Operating temperature: -55 to 150 °C
- Continuous drain current: 21 mA (at T_A=25 °C)
Absolute Maximum Ratings:
- Max gate source voltage: ±20 V
- Max continuous current: 0.021 A (at T_A=25 °C)
- Max junction/storage temperature: 150 °C
Key Specs:
- Drain-source breakdown voltage (V_BR)DSS: 600 V (V_GS=-5 V, I_D=250 μA)
- Gate threshold voltage (V_GS(th)): -2.7 V min, -2.0 V typ, -1.6 V max (V_DS=3 V, I_D=8 μA)
- Drain-source cutoff current (I_D(off)): 0.1 μA max (V_DS=600 V, V_GS=-5 V, T_j=25 °C)
- On-state drain current (I_DSS): 7 mA min (V_GS=0 V, V_DS=25 V)
- Drain-source on-state resistance (R_DS(on)): 320 Ω typ, 700 Ω max (V_GS=0 V, I_D=3 mA)
- Input capacitance (C_iss): 21 pF typ, 28 pF max (V_GS=-5 V, V_DS=25 V, f=1 MHz)
- Turn-on delay time (t_d(on)): 6.1 ns typ, 9.2 ns max (V_DD=300 V, V_GS=-3…7 V, I_D=0.01 A, R_G=6 Ω)
- Gate charge total (Q_g): 1.4 nC typ, 2.1 nC max (V_DD=400 V, I_D=10 mA, V_GS=-3 to 5 V)
Features:
- N-channel
- Depletion mode
- dv/dt rated
- Available with V_GS(th) indicator on reel
- Pb-free lead plating; RoHS compliant
- Qualified according to AEC Q101
- Halogen-free according to IEC61249-2-21
Applications:
Package:
- PG-SOT-23
BSS126H6327 Features
- N-channel
- Depletion mode
- d v /d t rated
- Available with V GS(th) indicator on reel
- Pb-free lead plating; RoHS compliant
- Qualified according to AEC Q101
- Halogen-free according to IEC61249-2-21
| Type | Package | Pb-free | Tape and Reel Information | Marking |
|---|---|---|---|---|
| BSS126 BSS126 | PG-SOT-23 PG-SOT-23 | Yes Yes | H6327: 3000 pcs/reel H6327: 3000 pcs/reel | SHs SHs |
| BSS126 BSS126 | PG-SOT-23 PG-SOT-23 | Yes Yes | H6906: 3000 pcs/reel sorted in V GS(th) bands 1) H6906: 3000 pcs/reel sorted in V GS(th) bands 1) | SHs SHs |
BSS126H6327 Pin Configuration
BSS126H6327 Pinout
Package: PG-SOT-23 (3-pin)
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | G | I | Gate |
| 2 | S | S | Source |
| 3 | D | O | Drain |
Notes
- BSS126H6327 is an N-channel depletion-mode MOSFET in a 3-pin SOT-23 package.
- Pin 1 (Gate) is the control input; Pin 2 (Source) is the source terminal; Pin 3 (Drain) is the drain terminal.
- The device includes an integral reverse diode (body diode) between source and drain.
- H6327 denotes the standard tape-and-reel variant (3000 pcs/reel, unmarked for V_GS(th) bands).
BSS126H6327 Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Continuous drain current | I D | T A =25 °C T A =70 °C | 0.021 0.017 | A |
| Pulsed drain current | I D,pulse | T A =25 °C | 0.085 | |
| Reverse diode d v /d t | d v /d t | I D =0.016 A, V DS =20 V, d i /d t =200 A/μs, T j,max =150 °C | 6 | kV/μs |
| Gate source voltage | V GS | ±20 | V | |
| ESD sensitivity (HBM) as per JESD22-A114 | Class 0 (0 >250 V) | |||
| Power dissipation | P tot | T A =25 °C | 0.50 | W |
| Operating and storage temperature | T j , T stg | -55 ... 150 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/150/56 |
BSS126H6327 Package Information
BSS126H6327 Ordering Information
| MPN | Package | Temperature Range | Packing Method |
|---|---|---|---|
| BSS126H6327 | PG-SOT-23 | -55 to 150 °C | 3000 pcs/reel |
| BSS126H6906 | PG-SOT-23 | -55 to 150 °C | 3000 pcs/reel sorted in V GS(th) bands 1) |
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| BSS126 | Infineon Technologies | SOT-23 |
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All MOSFETs datasheetsAll Infineon Technologies datasheets (140)
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